TR20234A - Bir difuezyon akimi ile sinirlanmis yari-iletken struektuerde mos dinamik hafiza - Google Patents

Bir difuezyon akimi ile sinirlanmis yari-iletken struektuerde mos dinamik hafiza

Info

Publication number
TR20234A
TR20234A TR20234A TR2023478A TR20234A TR 20234 A TR20234 A TR 20234A TR 20234 A TR20234 A TR 20234A TR 2023478 A TR2023478 A TR 2023478A TR 20234 A TR20234 A TR 20234A
Authority
TR
Turkey
Prior art keywords
struektuer
diffession
semi
conductive
current
Prior art date
Application number
TR20234A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of TR20234A publication Critical patent/TR20234A/tr

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
TR20234A 1977-11-03 1978-10-26 Bir difuezyon akimi ile sinirlanmis yari-iletken struektuerde mos dinamik hafiza TR20234A (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84800077A 1977-11-03 1977-11-03

Publications (1)

Publication Number Publication Date
TR20234A true TR20234A (tr) 1980-11-01

Family

ID=25302070

Family Applications (1)

Application Number Title Priority Date Filing Date
TR20234A TR20234A (tr) 1977-11-03 1978-10-26 Bir difuezyon akimi ile sinirlanmis yari-iletken struektuerde mos dinamik hafiza

Country Status (17)

Country Link
JP (2) JPS5474684A (tr)
BE (1) BE871678A (tr)
CA (1) CA1129550A (tr)
CH (1) CH636216A5 (tr)
DE (1) DE2846872C3 (tr)
FR (1) FR2408191A1 (tr)
GB (1) GB2007430B (tr)
HK (1) HK25484A (tr)
IL (1) IL55812A (tr)
IN (1) IN151278B (tr)
IT (1) IT1100012B (tr)
MY (1) MY8400042A (tr)
NL (1) NL191768C (tr)
PL (1) PL115612B1 (tr)
SE (1) SE438217B (tr)
SG (1) SG56282G (tr)
TR (1) TR20234A (tr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
DE3069973D1 (en) * 1979-08-25 1985-02-28 Zaidan Hojin Handotai Kenkyu Insulated-gate field-effect transistor
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
EP0033130B1 (en) * 1980-01-25 1986-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
JPH0782753B2 (ja) * 1984-08-31 1995-09-06 三菱電機株式会社 ダイナミックメモリ装置
USD845135S1 (en) 2017-02-24 2019-04-09 S. C. Johnson & Son, Inc. Bottle neck with cap

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544327A1 (de) * 1951-01-28 1970-02-26 Telefunken Patent Verfahren zum Herstellen einer dotierten Zone in einem begrenzten Bereich eines Halbleiterkoerpers
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (tr) * 1971-08-26 1976-07-16
JPS4931509U (tr) * 1972-06-17 1974-03-19
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
JPS5279786A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Semiconductor memory device
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
DE2603746A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher

Also Published As

Publication number Publication date
HK25484A (en) 1984-03-30
SE438217B (sv) 1985-04-01
DE2846872B2 (de) 1981-04-30
CH636216A5 (de) 1983-05-13
NL7810929A (nl) 1979-05-07
SG56282G (en) 1983-09-02
IL55812A (en) 1981-10-30
IL55812A0 (en) 1978-12-17
DE2846872C3 (de) 1989-06-08
MY8400042A (en) 1984-12-31
JPS59115667U (ja) 1984-08-04
JPS5474684A (en) 1979-06-14
SE7811094L (sv) 1979-05-04
FR2408191A1 (fr) 1979-06-01
CA1129550A (en) 1982-08-10
PL210682A1 (pl) 1979-07-16
BE871678A (fr) 1979-02-15
NL191768C (nl) 1996-07-02
IT7829360A0 (it) 1978-11-02
IN151278B (tr) 1983-03-19
PL115612B1 (en) 1981-04-30
NL191768B (nl) 1996-03-01
FR2408191B1 (tr) 1982-11-19
GB2007430A (en) 1979-05-16
JPH019174Y2 (tr) 1989-03-13
IT1100012B (it) 1985-09-28
GB2007430B (en) 1982-03-03
DE2846872A1 (de) 1979-05-10

Similar Documents

Publication Publication Date Title
IT1079567B (it) Memoria perfezionata
TR20007A (tr) Bir doener oeguetme cihazi gibi bueyuek caph bir doenen patenli yataklara mahsts y glama tertibati
JPS52154314A (en) Twooelement memory cell
IT1079558B (it) Memoria perfezionata
IT1115319B (it) Memoria perfezionata
BR7706183A (pt) Conjunto registrador meditor de energia eletrica de multiplas taxas
BR7700423A (pt) Dispositivo de celula de carga
ATA300577A (de) Lageranordnung
BR7701623A (pt) Aperfeicoamento em aparelho de toalete
SE7714156L (sv) Ram-minne med diffunderade felteffekttransistorer
MX146558A (es) Mejoras en celda de carga
IT7868667A0 (it) Macchina dinamoelettrica concollettore e spazzole
DK283677A (da) Forbrendingskraftmaskine
MX145071A (es) Mejoras en maquina de escribir con memoria electronica
TR20234A (tr) Bir difuezyon akimi ile sinirlanmis yari-iletken struektuerde mos dinamik hafiza
BR7702869A (pt) Aperfeicoamento em embreagem de dentes dinamica
IT1113763B (it) Memoria perfezionata
BR7701808A (pt) Memoria de capacitor de carga injetada
DK102277A (da) Elektrokemiske generatorer med stor specifik energi
FR2345822A1 (fr) Generateur electrochimique a circulation forcee
JPS537141A (en) Mos memory function generator
TR20036A (tr) Bir elektrik ampueluenuen bir tasit projektoeruenuen reflektoerue uezerine tesbitine mahsus tertibat
JPS52100942A (en) Memory cell
DE2861220D1 (en) Bipolar dynamic memory cell
MX143059A (es) Mejoras en un acumulador eelectrico