JPS5474684A - Nnchannel mos memory - Google Patents

Nnchannel mos memory

Info

Publication number
JPS5474684A
JPS5474684A JP13466978A JP13466978A JPS5474684A JP S5474684 A JPS5474684 A JP S5474684A JP 13466978 A JP13466978 A JP 13466978A JP 13466978 A JP13466978 A JP 13466978A JP S5474684 A JPS5474684 A JP S5474684A
Authority
JP
Japan
Prior art keywords
nnchannel
mos memory
mos
memory
nnchannel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13466978A
Other languages
English (en)
Inventor
Seodoaa Kuremenzu Jieemusu
Atsushiyubuiniku Deinetsushiyu
Toomasu Neruson Jieemusu
Uorutaa Piaasu Chiyaaruzu
Chingu Ai San Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5474684A publication Critical patent/JPS5474684A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
JP13466978A 1977-11-03 1978-11-02 Nnchannel mos memory Pending JPS5474684A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84800077A 1977-11-03 1977-11-03

Publications (1)

Publication Number Publication Date
JPS5474684A true JPS5474684A (en) 1979-06-14

Family

ID=25302070

Family Applications (2)

Application Number Title Priority Date Filing Date
JP13466978A Pending JPS5474684A (en) 1977-11-03 1978-11-02 Nnchannel mos memory
JP1983192222U Granted JPS59115667U (ja) 1977-11-03 1983-12-15 集積回路

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1983192222U Granted JPS59115667U (ja) 1977-11-03 1983-12-15 集積回路

Country Status (17)

Country Link
JP (2) JPS5474684A (ja)
BE (1) BE871678A (ja)
CA (1) CA1129550A (ja)
CH (1) CH636216A5 (ja)
DE (1) DE2846872B2 (ja)
FR (1) FR2408191A1 (ja)
GB (1) GB2007430B (ja)
HK (1) HK25484A (ja)
IL (1) IL55812A (ja)
IN (1) IN151278B (ja)
IT (1) IT1100012B (ja)
MY (1) MY8400042A (ja)
NL (1) NL191768C (ja)
PL (1) PL115612B1 (ja)
SE (1) SE438217B (ja)
SG (1) SG56282G (ja)
TR (1) TR20234A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
EP0024905B1 (en) * 1979-08-25 1985-01-16 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated-gate field-effect transistor
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
EP0033130B1 (en) * 1980-01-25 1986-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
USD845135S1 (en) 2017-02-24 2019-04-09 S. C. Johnson & Son, Inc. Bottle neck with cap

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931509U (ja) * 1972-06-17 1974-03-19
JPS51137339A (en) * 1975-05-05 1976-11-27 Intel Corp Integrated circuit memory
JPS5278390A (en) * 1975-10-23 1977-07-01 American Micro Syst Semiconductor memory having single igfet memory cell and method of producing same
JPS5279786A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Semiconductor memory device
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
JPS52134385A (en) * 1976-05-04 1977-11-10 Siemens Ag Semiconductor memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544327A1 (de) * 1951-01-28 1970-02-26 Telefunken Patent Verfahren zum Herstellen einer dotierten Zone in einem begrenzten Bereich eines Halbleiterkoerpers
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (ja) * 1971-08-26 1976-07-16
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
DE2603746A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931509U (ja) * 1972-06-17 1974-03-19
JPS51137339A (en) * 1975-05-05 1976-11-27 Intel Corp Integrated circuit memory
JPS5278390A (en) * 1975-10-23 1977-07-01 American Micro Syst Semiconductor memory having single igfet memory cell and method of producing same
JPS5279786A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Semiconductor memory device
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
JPS52134385A (en) * 1976-05-04 1977-11-10 Siemens Ag Semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置

Also Published As

Publication number Publication date
CH636216A5 (de) 1983-05-13
NL7810929A (nl) 1979-05-07
SG56282G (en) 1983-09-02
BE871678A (fr) 1979-02-15
GB2007430A (en) 1979-05-16
PL210682A1 (pl) 1979-07-16
IL55812A (en) 1981-10-30
DE2846872A1 (de) 1979-05-10
TR20234A (tr) 1980-11-01
IT7829360A0 (it) 1978-11-02
CA1129550A (en) 1982-08-10
NL191768B (nl) 1996-03-01
SE438217B (sv) 1985-04-01
JPH019174Y2 (ja) 1989-03-13
JPS59115667U (ja) 1984-08-04
MY8400042A (en) 1984-12-31
NL191768C (nl) 1996-07-02
DE2846872C3 (ja) 1989-06-08
DE2846872B2 (de) 1981-04-30
IL55812A0 (en) 1978-12-17
PL115612B1 (en) 1981-04-30
HK25484A (en) 1984-03-30
FR2408191A1 (fr) 1979-06-01
GB2007430B (en) 1982-03-03
SE7811094L (sv) 1979-05-04
FR2408191B1 (ja) 1982-11-19
IT1100012B (it) 1985-09-28
IN151278B (ja) 1983-03-19

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