EP2325887A3 - Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren - Google Patents

Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren Download PDF

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Publication number
EP2325887A3
EP2325887A3 EP10183830A EP10183830A EP2325887A3 EP 2325887 A3 EP2325887 A3 EP 2325887A3 EP 10183830 A EP10183830 A EP 10183830A EP 10183830 A EP10183830 A EP 10183830A EP 2325887 A3 EP2325887 A3 EP 2325887A3
Authority
EP
European Patent Office
Prior art keywords
photoelectric
photoelectric conversion
conversion device
section
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10183830A
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English (en)
French (fr)
Other versions
EP2325887A2 (de
EP2325887B1 (de
Inventor
Hiroshi Yuzurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP2325887A2 publication Critical patent/EP2325887A2/de
Publication of EP2325887A3 publication Critical patent/EP2325887A3/de
Application granted granted Critical
Publication of EP2325887B1 publication Critical patent/EP2325887B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
EP10183830.8A 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren Expired - Lifetime EP2325887B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22307899 1999-08-05
JP2000232108A JP3624140B2 (ja) 1999-08-05 2000-07-31 光電変換装置およびその製造方法、デジタルスチルカメラ又はデジタルビデオカメラ
EP00306637A EP1075028B1 (de) 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP00306637A Division EP1075028B1 (de) 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren
EP00306637.0 Division 2000-08-04

Publications (3)

Publication Number Publication Date
EP2325887A2 EP2325887A2 (de) 2011-05-25
EP2325887A3 true EP2325887A3 (de) 2011-08-03
EP2325887B1 EP2325887B1 (de) 2016-07-27

Family

ID=26525259

Family Applications (3)

Application Number Title Priority Date Filing Date
EP10183830.8A Expired - Lifetime EP2325887B1 (de) 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren
EP00306637A Expired - Lifetime EP1075028B1 (de) 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren
EP10183833A Withdrawn EP2270861A3 (de) 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP00306637A Expired - Lifetime EP1075028B1 (de) 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren
EP10183833A Withdrawn EP2270861A3 (de) 1999-08-05 2000-08-04 Photoelektrische Umwandlungsvorrichtung und deren Herstellungsverfahren

Country Status (4)

Country Link
US (2) US7342269B1 (de)
EP (3) EP2325887B1 (de)
JP (1) JP3624140B2 (de)
TW (1) TW513783B (de)

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JP2004304012A (ja) 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP4794821B2 (ja) * 2004-02-19 2011-10-19 キヤノン株式会社 固体撮像装置および撮像システム
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JP4345794B2 (ja) 2006-09-28 2009-10-14 ソニー株式会社 固体撮像素子の製造方法
KR100860466B1 (ko) * 2006-12-27 2008-09-25 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
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EP2518768B1 (de) 2009-12-26 2019-03-20 Canon Kabushiki Kaisha Festkörperabbildungsvorrichtung und abbildundssystem
CN105023930B (zh) * 2009-12-26 2018-04-06 佳能株式会社 固态图像拾取装置和图像拾取系统
JP5651982B2 (ja) * 2010-03-31 2015-01-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP5852363B2 (ja) * 2011-08-26 2016-02-03 日本放送協会 空間光変調器
JP5943577B2 (ja) 2011-10-07 2016-07-05 キヤノン株式会社 光電変換装置および撮像システム
JP2012146989A (ja) * 2012-02-20 2012-08-02 Canon Inc 光電変換装置及び撮像システム
JP6193695B2 (ja) * 2013-09-13 2017-09-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2014171244A (ja) * 2014-05-02 2014-09-18 Semiconductor Energy Lab Co Ltd 半導体装置
JP6650719B2 (ja) 2015-09-30 2020-02-19 キヤノン株式会社 撮像装置、撮像システムおよび半導体装置の製造方法
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JP2018006551A (ja) 2016-06-30 2018-01-11 キヤノン株式会社 固体撮像装置の製造方法
JP6808481B2 (ja) 2016-12-27 2021-01-06 キヤノン株式会社 半導体装置、システム、および、半導体装置の製造方法

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Also Published As

Publication number Publication date
EP2325887A2 (de) 2011-05-25
JP3624140B2 (ja) 2005-03-02
EP2325887B1 (de) 2016-07-27
EP1075028B1 (de) 2012-07-18
US7476560B2 (en) 2009-01-13
EP2270861A3 (de) 2011-02-09
US7342269B1 (en) 2008-03-11
JP2001111022A (ja) 2001-04-20
EP1075028A3 (de) 2008-06-04
US20080070341A1 (en) 2008-03-20
TW513783B (en) 2002-12-11
EP1075028A2 (de) 2001-02-07
EP2270861A2 (de) 2011-01-05

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