FR2775387B1 - Dispositif a semiconducteur ayant une structure soi et procede de fabrication - Google Patents
Dispositif a semiconducteur ayant une structure soi et procede de fabricationInfo
- Publication number
- FR2775387B1 FR2775387B1 FR9811927A FR9811927A FR2775387B1 FR 2775387 B1 FR2775387 B1 FR 2775387B1 FR 9811927 A FR9811927 A FR 9811927A FR 9811927 A FR9811927 A FR 9811927A FR 2775387 B1 FR2775387 B1 FR 2775387B1
- Authority
- FR
- France
- Prior art keywords
- layer
- aluminum pad
- semiconductor device
- soi structure
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 5
- 239000010410 layer Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10045459A JPH11243208A (ja) | 1998-02-26 | 1998-02-26 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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FR2775387A1 FR2775387A1 (fr) | 1999-08-27 |
FR2775387B1 true FR2775387B1 (fr) | 2002-09-06 |
Family
ID=12719953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9811927A Expired - Fee Related FR2775387B1 (fr) | 1998-02-26 | 1998-09-24 | Dispositif a semiconducteur ayant une structure soi et procede de fabrication |
Country Status (6)
Country | Link |
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US (2) | US6459125B2 (fr) |
JP (1) | JPH11243208A (fr) |
KR (2) | KR19990071421A (fr) |
DE (1) | DE19842441B4 (fr) |
FR (1) | FR2775387B1 (fr) |
TW (1) | TW382817B (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11243208A (ja) * | 1998-02-26 | 1999-09-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP3824845B2 (ja) * | 2000-06-21 | 2006-09-20 | セイコーエプソン株式会社 | Lcdドライバicチップ |
JP2002270611A (ja) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2003045958A (ja) * | 2001-07-27 | 2003-02-14 | Denso Corp | 半導体装置及びその製造方法 |
US6762503B2 (en) * | 2002-08-29 | 2004-07-13 | Micron Technology, Inc. | Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same |
US6841874B1 (en) * | 2002-11-01 | 2005-01-11 | Amkor Technology, Inc. | Wafer-level chip-scale package |
DE10308275A1 (de) | 2003-02-26 | 2004-09-16 | Advanced Micro Devices, Inc., Sunnyvale | Strahlungsresistentes Halbleiterbauteil |
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WO2009027888A2 (fr) * | 2007-08-24 | 2009-03-05 | Nxp B.V. | Structure apte au brasage |
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TW434646B (en) * | 1997-11-21 | 2001-05-16 | Rohm Co Ltd | Semiconductor device and method for making the same |
JPH11243208A (ja) * | 1998-02-26 | 1999-09-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP3546783B2 (ja) * | 1999-06-09 | 2004-07-28 | セイコーエプソン株式会社 | 半導体記憶装置及びその製造方法 |
-
1998
- 1998-02-26 JP JP10045459A patent/JPH11243208A/ja active Pending
- 1998-07-23 TW TW087112003A patent/TW382817B/zh not_active IP Right Cessation
- 1998-07-27 US US09/122,863 patent/US6459125B2/en not_active Expired - Fee Related
- 1998-09-16 DE DE19842441A patent/DE19842441B4/de not_active Expired - Fee Related
- 1998-09-24 FR FR9811927A patent/FR2775387B1/fr not_active Expired - Fee Related
- 1998-10-27 KR KR1019980044987A patent/KR19990071421A/ko not_active Application Discontinuation
-
2001
- 2001-01-30 KR KR10-2001-0004231A patent/KR100377893B1/ko not_active IP Right Cessation
-
2002
- 2002-04-16 US US10/122,322 patent/US20020110954A1/en not_active Abandoned
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TW382817B (en) | 2000-02-21 |
KR19990071421A (ko) | 1999-09-27 |
US6459125B2 (en) | 2002-10-01 |
FR2775387A1 (fr) | 1999-08-27 |
DE19842441B4 (de) | 2004-07-29 |
DE19842441A1 (de) | 1999-09-09 |
KR100377893B1 (ko) | 2003-03-29 |
JPH11243208A (ja) | 1999-09-07 |
KR20010072669A (ko) | 2001-07-31 |
US20020003259A1 (en) | 2002-01-10 |
US20020110954A1 (en) | 2002-08-15 |
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