EP1562234A3 - Dispositif capteur d'image et système de prise d'images - Google Patents

Dispositif capteur d'image et système de prise d'images Download PDF

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Publication number
EP1562234A3
EP1562234A3 EP05002301A EP05002301A EP1562234A3 EP 1562234 A3 EP1562234 A3 EP 1562234A3 EP 05002301 A EP05002301 A EP 05002301A EP 05002301 A EP05002301 A EP 05002301A EP 1562234 A3 EP1562234 A3 EP 1562234A3
Authority
EP
European Patent Office
Prior art keywords
image pick
solid
state image
suppressed
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05002301A
Other languages
German (de)
English (en)
Other versions
EP1562234B1 (fr
EP1562234A2 (fr
Inventor
Hideaki Takada
Akira Okita
Hiroki Hiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP1562234A2 publication Critical patent/EP1562234A2/fr
Publication of EP1562234A3 publication Critical patent/EP1562234A3/fr
Application granted granted Critical
Publication of EP1562234B1 publication Critical patent/EP1562234B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP05002301A 2004-02-06 2005-02-03 Procédé de fabrication d'un dispositif capteur d'image Not-in-force EP1562234B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004030814 2004-02-06
JP2004030814A JP3890333B2 (ja) 2004-02-06 2004-02-06 固体撮像装置

Publications (3)

Publication Number Publication Date
EP1562234A2 EP1562234A2 (fr) 2005-08-10
EP1562234A3 true EP1562234A3 (fr) 2006-12-13
EP1562234B1 EP1562234B1 (fr) 2012-12-26

Family

ID=34675560

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05002301A Not-in-force EP1562234B1 (fr) 2004-02-06 2005-02-03 Procédé de fabrication d'un dispositif capteur d'image

Country Status (3)

Country Link
US (2) US20050174552A1 (fr)
EP (1) EP1562234B1 (fr)
JP (1) JP3890333B2 (fr)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4508619B2 (ja) * 2003-12-03 2010-07-21 キヤノン株式会社 固体撮像装置の製造方法
JP3793202B2 (ja) * 2004-02-02 2006-07-05 キヤノン株式会社 固体撮像装置
JP4067054B2 (ja) * 2004-02-13 2008-03-26 キヤノン株式会社 固体撮像装置および撮像システム
US7294818B2 (en) * 2004-08-24 2007-11-13 Canon Kabushiki Kaisha Solid state image pickup device and image pickup system comprising it
JP4916101B2 (ja) * 2004-09-01 2012-04-11 キヤノン株式会社 光電変換装置、固体撮像装置及び固体撮像システム
JP5089017B2 (ja) * 2004-09-01 2012-12-05 キヤノン株式会社 固体撮像装置及び固体撮像システム
JP4971586B2 (ja) 2004-09-01 2012-07-11 キヤノン株式会社 固体撮像装置
JP2006073736A (ja) * 2004-09-01 2006-03-16 Canon Inc 光電変換装置、固体撮像装置及び固体撮像システム
JP4459064B2 (ja) * 2005-01-14 2010-04-28 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP2006197392A (ja) * 2005-01-14 2006-07-27 Canon Inc 固体撮像装置、カメラ、及び固体撮像装置の駆動方法
JP4416668B2 (ja) 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP2006237315A (ja) * 2005-02-25 2006-09-07 Matsushita Electric Ind Co Ltd 固体撮像装置
JP4459099B2 (ja) * 2005-03-18 2010-04-28 キヤノン株式会社 固体撮像装置及びカメラ
JP4794877B2 (ja) * 2005-03-18 2011-10-19 キヤノン株式会社 固体撮像装置及びカメラ
JP4677258B2 (ja) 2005-03-18 2011-04-27 キヤノン株式会社 固体撮像装置及びカメラ
JP4459098B2 (ja) 2005-03-18 2010-04-28 キヤノン株式会社 固体撮像装置及びカメラ
JP2007242697A (ja) * 2006-03-06 2007-09-20 Canon Inc 撮像装置および撮像システム
JP2007273871A (ja) * 2006-03-31 2007-10-18 Toshiba Corp 設計データ作成方法、設計データ作成プログラム、及び半導体装置の製造方法
JP4928199B2 (ja) * 2006-09-07 2012-05-09 キヤノン株式会社 信号検出装置、信号検出装置の信号読み出し方法及び信号検出装置を用いた撮像システム
JP4462299B2 (ja) 2007-07-17 2010-05-12 ソニー株式会社 撮像装置、および画像処理方法、並びにコンピュータ・プログラム
JP4991436B2 (ja) 2007-08-02 2012-08-01 キヤノン株式会社 撮像装置及び撮像システム
JP2009141631A (ja) * 2007-12-05 2009-06-25 Canon Inc 光電変換装置及び撮像装置
JP5268389B2 (ja) 2008-02-28 2013-08-21 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP5173493B2 (ja) * 2008-02-29 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
JP5094498B2 (ja) * 2008-03-27 2012-12-12 キヤノン株式会社 固体撮像装置及び撮像システム
JP5274166B2 (ja) * 2008-09-10 2013-08-28 キヤノン株式会社 光電変換装置及び撮像システム
JP5402092B2 (ja) * 2009-03-04 2014-01-29 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
JP5539105B2 (ja) 2009-09-24 2014-07-02 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5539104B2 (ja) * 2009-09-24 2014-07-02 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP6115982B2 (ja) 2011-07-04 2017-04-19 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP5864990B2 (ja) 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ
JP5484422B2 (ja) 2011-10-07 2014-05-07 キヤノン株式会社 固体撮像装置
JP6053505B2 (ja) 2012-01-18 2016-12-27 キヤノン株式会社 固体撮像装置
JP5967944B2 (ja) 2012-01-18 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ
CN104919569B (zh) * 2013-01-11 2017-12-22 瑞萨电子株式会社 半导体装置
JP6319946B2 (ja) 2013-04-18 2018-05-09 キヤノン株式会社 固体撮像装置及び撮像システム
JP6100074B2 (ja) 2013-04-25 2017-03-22 キヤノン株式会社 光電変換装置及び撮像システム
JP6174901B2 (ja) 2013-05-10 2017-08-02 キヤノン株式会社 固体撮像装置及びカメラ
JP5886793B2 (ja) * 2013-06-11 2016-03-16 浜松ホトニクス株式会社 固体撮像装置
JP5886806B2 (ja) 2013-09-17 2016-03-16 キヤノン株式会社 固体撮像装置
JP6239975B2 (ja) 2013-12-27 2017-11-29 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム
JP6412328B2 (ja) 2014-04-01 2018-10-24 キヤノン株式会社 固体撮像装置およびカメラ
JP6109125B2 (ja) 2014-08-20 2017-04-05 キヤノン株式会社 半導体装置、固体撮像装置、および撮像システム
US9979916B2 (en) 2014-11-21 2018-05-22 Canon Kabushiki Kaisha Imaging apparatus and imaging system
JP2016201397A (ja) * 2015-04-07 2016-12-01 ソニー株式会社 固体撮像素子および電子機器
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
US10319765B2 (en) 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
JP7245014B2 (ja) 2018-09-10 2023-03-23 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の駆動方法
JP7353752B2 (ja) 2018-12-06 2023-10-02 キヤノン株式会社 光電変換装置及び撮像システム
JP7336206B2 (ja) 2019-02-27 2023-08-31 キヤノン株式会社 光電変換装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682203A (en) * 1992-02-14 1997-10-28 Canon Kabushiki Kaisha Solid-state image sensing device and photo-taking system utilizing condenser type micro-lenses
US20010026322A1 (en) * 2000-01-27 2001-10-04 Hidekazu Takahashi Image pickup apparatus
EP1213764A2 (fr) * 2000-12-08 2002-06-12 STMicroelectronics Limited Capteurs d'images à l'état solide et matrices de microlentilles

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JP2004191893A (ja) * 2002-12-13 2004-07-08 Canon Inc 撮像装置
KR101006435B1 (ko) * 2003-09-01 2011-01-06 삼성전자주식회사 노광 마스크, 이를 포함하는 노광 장치 및 이를 이용한표시 장치용 표시판의 제조 방법
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JP4508619B2 (ja) * 2003-12-03 2010-07-21 キヤノン株式会社 固体撮像装置の製造方法
JP3793202B2 (ja) * 2004-02-02 2006-07-05 キヤノン株式会社 固体撮像装置
JP4067054B2 (ja) * 2004-02-13 2008-03-26 キヤノン株式会社 固体撮像装置および撮像システム
US7294818B2 (en) * 2004-08-24 2007-11-13 Canon Kabushiki Kaisha Solid state image pickup device and image pickup system comprising it
JP2006073736A (ja) * 2004-09-01 2006-03-16 Canon Inc 光電変換装置、固体撮像装置及び固体撮像システム
JP4916101B2 (ja) * 2004-09-01 2012-04-11 キヤノン株式会社 光電変換装置、固体撮像装置及び固体撮像システム
JP5089017B2 (ja) * 2004-09-01 2012-12-05 キヤノン株式会社 固体撮像装置及び固体撮像システム
JP4971586B2 (ja) * 2004-09-01 2012-07-11 キヤノン株式会社 固体撮像装置
JP4459064B2 (ja) * 2005-01-14 2010-04-28 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP2006197392A (ja) * 2005-01-14 2006-07-27 Canon Inc 固体撮像装置、カメラ、及び固体撮像装置の駆動方法
JP4416668B2 (ja) * 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682203A (en) * 1992-02-14 1997-10-28 Canon Kabushiki Kaisha Solid-state image sensing device and photo-taking system utilizing condenser type micro-lenses
US20010026322A1 (en) * 2000-01-27 2001-10-04 Hidekazu Takahashi Image pickup apparatus
EP1213764A2 (fr) * 2000-12-08 2002-06-12 STMicroelectronics Limited Capteurs d'images à l'état solide et matrices de microlentilles

Also Published As

Publication number Publication date
JP3890333B2 (ja) 2007-03-07
US20050174552A1 (en) 2005-08-11
EP1562234B1 (fr) 2012-12-26
EP1562234A2 (fr) 2005-08-10
US20110169996A1 (en) 2011-07-14
US8643765B2 (en) 2014-02-04
JP2005223707A (ja) 2005-08-18

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