EP1469701B1 - Microstructures en relief - Google Patents

Microstructures en relief Download PDF

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Publication number
EP1469701B1
EP1469701B1 EP04076015A EP04076015A EP1469701B1 EP 1469701 B1 EP1469701 B1 EP 1469701B1 EP 04076015 A EP04076015 A EP 04076015A EP 04076015 A EP04076015 A EP 04076015A EP 1469701 B1 EP1469701 B1 EP 1469701B1
Authority
EP
European Patent Office
Prior art keywords
sidewall
diaphragm
transducer
raised microstructure
raised
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP04076015A
Other languages
German (de)
English (en)
Other versions
EP1469701A3 (fr
EP1469701A2 (fr
Inventor
Michael Pederson
Peter V. Loeppert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Knowles Electronics LLC
Original Assignee
Knowles Electronics LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/910,110 external-priority patent/US6987859B2/en
Application filed by Knowles Electronics LLC filed Critical Knowles Electronics LLC
Publication of EP1469701A2 publication Critical patent/EP1469701A2/fr
Publication of EP1469701A3 publication Critical patent/EP1469701A3/fr
Application granted granted Critical
Publication of EP1469701B1 publication Critical patent/EP1469701B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/006—Interconnection of transducer parts

Definitions

  • the goal is to create a stiff element at a precise position relative to the diaphragm.
  • One method to achieve this is to form the backplate using a silicon nitride thin film deposited over a shaped silicon oxide sacrificial layer which serves to establish the desired separation. This sacrificial layer is later removed through well known etch processes, leaving the raised backplate. Intrinsic tensile stress in the silicon nitride backplate will cause it to deflect out of position. Compressive stress is always avoided as it causes the structure to buckle.
  • the object of the present invention is to solve these and other problems.
  • the conducting diaphragm 12 is electrically insulated from the substrate 30 by a dielectric layer 31.
  • a conducting electrode 42 is attached to the non-conductive perforated member 40.
  • the perforated member contains a number of openings 21 through which a sacrificial layer (not shown) between the diaphragm and perforated member is etched during fabrication to form the air gap 20 and which later serve to reduce the acoustic damping of the air in the air gap to provide sufficient bandwidth of the transducer.
  • a number of openings are also made in the diaphragm 12 and the perforated member 40 to form a leakage path 14 which together with the compliance of the back chamber (not shown), on which the transducer will be mounted, forms a high-pass filter resulting in a roll-off frequency low enough not to impede the acoustic function of the transducer and high enough to remove the influence of barometric pressure variations.
  • the openings 14 are defined by photo lithographic methods and can therefore be tightly controlled, leading to a well defined low frequency behavior of the transducer.
  • the attachment of the perforated member 40 along the perimeter 43 can be varied to reduce the curvature of the perforated member due to intrinsic internal bending moments.
  • the perimeter can be a continuous curved surface ( FIGS. 1-3 ) or discontinuous, such as corrugated ( FIG. 4 ).
  • a discontinuous perimeter 43 provides additional rigidity of the perforated member 40 thereby reducing the curvature due to intrinsic bending moments in the perforated member 40 .
  • the transducer 50 includes a conductive diaphragm 12 and a perforated member 40 supported by a substrate 30 and separated by an air gap 20 .
  • the diaphragm 12 is attached to the substrate through a number of springs 11 , which serve to mechanically decouple the diaphragm from the substrate, thereby relieving any intrinsic stress in the diaphragm. Moreover, the diaphragm is released for stress in the substrate and device package.
  • the conducting diaphragm 12 is electrically insulated from the substrate 30 by a dielectric layer 31 .
  • a conducting electrode 42 is attached to the non-conductive perforated member 40 .
  • the perforated member contains a number of openings 21 through which a sacrificial layer (not shown) between the diaphragm 12 and the perforated member is etched during fabrication to form the air gap 20 and which later serves to reduce the acoustic damping of the air in the air gap to provide sufficient bandwidth of the transducer.
  • a number of openings are made in the support structure 41 to form a leakage path 14 ( FIG.
  • an electrical potential is applied between the conductive diaphragm 12 and the electrode 42 on the perforated member.
  • the electrical potential and associated charging of the conductors produces an electrostatic attraction force between the diaphragm and the perforated member.
  • the free diaphragm 12 moves toward the perforated member 40 until it rests upon the support structure 41 , which sets the initial operating point of the transducer with a well defined air gap 20 and acoustic leakage through path 14 .
  • a pressure difference appears across the diaphragm 12 causing it to deflect towards or away from the perforated member 40 .
  • the deflection of the diaphragm 12 causes a change of the electrical field, and consequently capacitance, between the diaphragm 12 and the perforated member 40 .
  • the electrical capacitance of the transducer is modulated by the acoustical energy.
  • the amplifier supplies a mirror charge on output side of the feedback capacitor to remove the offset, resulting in a change of output voltage "Vout.”
  • the charge gain in this circuit is set by the ratio between the initial transducer capacitance and the capacitance of the feedback capacitor.
  • the raised microstructure 110 comprises a generally circular thin-film plate or backplate 112 supported by a sidewall 114 .
  • FIG. 15 shows a plan view of the assembly of FIG. 13 with a surface of the sidewall 114 of the present invention shown in phantom. It can be seen that the sidewall 114 of the present invention as shown in FIGS. 13-15 is ribbed, forming a plurality of periodic ridges 120 and grooves 122. In the preferred embodiment, the ridges 120 and grooves 122 are parallel and equally spaced, forming a corrugated structure. Furthermore, the preferred embodiment utilizes ridges 120 and grooves 122 of a squared cross section. The effect of corrugating the side wall in this manner is to create segments 124 of the sidewall 114 that are radial, as is the intrinsic tension T of the plate 112.
  • the sidewall 114 By making portions of the sidewall 114 radial, as is the tension T , the sidewall 114 is stiffened. It has been found that the sidewall 114 of the prior art, which is tangential to plate 112 , is easily bent as compared to the radial segments 124 of the present invention.
  • FIGS. 13-15 Other geometries than that shown in FIGS. 13-15 of the corrugations or ridges 120 and grooves 122 can be imagined and used effectively to increase the sidewall's 114 ability to resist moment M and the geometry depicted in the FIGS. 13-15 is not intended to limit the scope of the present invention.
  • a generally annular geometry, generally triangular geometry or any combination or variation of these geometries or others could be utilized for the ridges 122 and grooves 124 .
  • the corrugations are radial and hence the sidewalls 114 are parallel to the tension in the backplate 112 .
  • the sacrificial material is etched in such a way that the sidewalls 114 are sloped with respect to the substrate to allow good step coverage as the thin film backplate 112 is deposited.

Claims (8)

  1. - Microstructure en relief (110) destinée à être utilisée dans un dispositif à base de silicium, la microstructure en relief (110) comprenant : une plaque en feuille mince (112), généralement plane, ayant une périphérie ; et une paroi latérale (114), caractérisée par le fait que la paroi latérale (114) est à nervures et comprend une pluralité de crêtes (120) et rainures (122), les crêtes et rainures (120, 122) s'étendant sensiblement sur toute la périphérie et étant en outre disposées sensiblement perpendiculairement à une bordure de la plaque en feuille mince (112) définie par la périphérie, la paroi latérale à nervures (114) étant disposée pour supporter la plaque en feuille mince (112), généralement plane, le long de la périphérie ; et par le fait que les différentes crêtes et rainures (120, 122) de la paroi latérale à nervures (114) forment au moins une nervure, et dans laquelle au moins une nervure renforce la paroi latérale à nervures (114).
  2. - Microstructure en relief selon la revendication 1, dans laquelle les crêtes et rainures (120, 122) de la paroi latérale à nervures (114) sont parallèles et espacées de manière égale pour former une paroi latérale cannelée.
  3. - Microstructure en relief selon la revendication 1, dans laquelle la nervure (120) a une section transversale généralement arquée.
  4. - Microstructure en relief selon la revendication 1, dans laquelle la nervure (120) a une section transversale généralement triangulaire.
  5. - Microstructure en relief selon la revendication 1, dans laquelle la nervure (120) a une section transversale généralement rectangulaire.
  6. - Microstructure en relief selon la revendication 1, dans laquelle la plaque en feuille mince (112) comprend une plaque d'un transducteur capacitif à base de silicium.
  7. - Microstructure en relief selon la revendication 1, dans laquelle la plaque en feuille mince (112) comprend une plaque arrière rigide d'un microphone à base de silicium.
  8. - Microstructure en relief selon la revendication 1, dans laquelle la paroi latérale (114) enferme sensiblement complètement la zone au-dessous de la plaque en feuille mince (112).
EP04076015A 2000-08-11 2001-08-10 Microstructures en relief Expired - Lifetime EP1469701B1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US910110 1978-05-30
US63740100A 2000-08-11 2000-08-11
US637401 2000-08-11
US09/910,110 US6987859B2 (en) 2001-07-20 2001-07-20 Raised microstructure of silicon based device
EP01959715A EP1310136B1 (fr) 2000-08-11 2001-08-10 Transducteur a bande large miniature

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP01959715A Division EP1310136B1 (fr) 2000-08-11 2001-08-10 Transducteur a bande large miniature

Publications (3)

Publication Number Publication Date
EP1469701A2 EP1469701A2 (fr) 2004-10-20
EP1469701A3 EP1469701A3 (fr) 2005-11-16
EP1469701B1 true EP1469701B1 (fr) 2008-04-16

Family

ID=27092826

Family Applications (2)

Application Number Title Priority Date Filing Date
EP04076015A Expired - Lifetime EP1469701B1 (fr) 2000-08-11 2001-08-10 Microstructures en relief
EP01959715A Expired - Lifetime EP1310136B1 (fr) 2000-08-11 2001-08-10 Transducteur a bande large miniature

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP01959715A Expired - Lifetime EP1310136B1 (fr) 2000-08-11 2001-08-10 Transducteur a bande large miniature

Country Status (9)

Country Link
EP (2) EP1469701B1 (fr)
JP (3) JP4338395B2 (fr)
KR (1) KR100571967B1 (fr)
CN (2) CN1498513B (fr)
AT (2) ATE321429T1 (fr)
AU (1) AU2001281241A1 (fr)
DE (2) DE60118208T2 (fr)
DK (2) DK1469701T3 (fr)
WO (1) WO2002015636A2 (fr)

Cited By (4)

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US9779716B2 (en) 2015-12-30 2017-10-03 Knowles Electronics, Llc Occlusion reduction and active noise reduction based on seal quality
US9812149B2 (en) 2016-01-28 2017-11-07 Knowles Electronics, Llc Methods and systems for providing consistency in noise reduction during speech and non-speech periods
US9830930B2 (en) 2015-12-30 2017-11-28 Knowles Electronics, Llc Voice-enhanced awareness mode
US9961443B2 (en) 2015-09-14 2018-05-01 Knowles Electronics, Llc Microphone signal fusion

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JP2004506394A (ja) 2004-02-26
KR100571967B1 (ko) 2006-04-18
DE60118208T2 (de) 2007-04-12
DE60118208D1 (de) 2006-05-11
CN101867858B (zh) 2012-02-22
JP2007116721A (ja) 2007-05-10
JP2009153203A (ja) 2009-07-09
WO2002015636A3 (fr) 2002-10-24
EP1310136B1 (fr) 2006-03-22
CN101867858A (zh) 2010-10-20
CN1498513B (zh) 2010-07-14
DK1469701T3 (da) 2008-08-18
WO2002015636A2 (fr) 2002-02-21
EP1469701A3 (fr) 2005-11-16
DE60133679D1 (de) 2008-05-29
EP1310136A2 (fr) 2003-05-14
AU2001281241A1 (en) 2002-02-25
JP5049312B2 (ja) 2012-10-17
DE60133679T2 (de) 2009-06-10
CN1498513A (zh) 2004-05-19
EP1469701A2 (fr) 2004-10-20
KR20030033026A (ko) 2003-04-26
ATE321429T1 (de) 2006-04-15
DK1310136T3 (da) 2006-07-31
JP4338395B2 (ja) 2009-10-07

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