EP1145393A1 - Method and apparatus for hermetically sealing photonic devices - Google Patents

Method and apparatus for hermetically sealing photonic devices

Info

Publication number
EP1145393A1
EP1145393A1 EP99960433A EP99960433A EP1145393A1 EP 1145393 A1 EP1145393 A1 EP 1145393A1 EP 99960433 A EP99960433 A EP 99960433A EP 99960433 A EP99960433 A EP 99960433A EP 1145393 A1 EP1145393 A1 EP 1145393A1
Authority
EP
European Patent Office
Prior art keywords
photonic device
substrate material
accordance
layer
hermetically sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99960433A
Other languages
German (de)
English (en)
French (fr)
Inventor
Ping Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of EP1145393A1 publication Critical patent/EP1145393A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Definitions

  • the present invention generally relates to methods and apparatus for hermetically sealing opto-electronic devices. More particularly, the present invention relates to a system for hermetically sealing photonic devices such as vertical cavity surface emitting lasers (VCSELs), photo-detectors, and the like.
  • VCSELs vertical cavity surface emitting lasers
  • a VCSEL is a semiconductor laser which typically emits light normal to the surface to which it is mounted, and a photo-detector typically receives the light transmitted by the VCSEL.
  • photonic devices are used for transmitting data in the form of pulses of light in optical fibers such as in forming data links for parallel transmission and network computing. Photonic devices are particularly desirable as they can be processed, tested and screened on wafers, which facilitates high yield and thus low cost production.
  • a conventional method of sealing photonic devices involves covering the photonic devices in epoxy. As moisture can still penetrate the epoxy seal, however, a true hermetic seal is not formed.
  • Other conventional methods of hermetically sealing photonic devices typically encase the photonic devices inside of TO can packages, which are typically Kovar metal cans with optical windows, and seals the packages with weld or solder. In generally, however, only one photonic device at a time can be hermetically sealed using these methods. Accordingly, these methods are generally costly and time intensive.
  • the present invention relates to hermetically sealing photonic devices such as vertical cavity surface emitting lasers (VCSELs), photo-detectors, and the like.
  • a photonic device is mounted on a substrate material and sealed in a flexible hermetic seal.
  • the photonic device is configured to emit or to receive light through the substrate material.
  • the photonic device is covered with an adhesive layer and a metal layer deposited onto the adhesive layer.
  • the photonic device is configured to emit or to receive light in a direction substantially vertically upward from the substrate material.
  • a cover is placed over the photonic device, then the cover is hermetically sealed to the substrate material with an adhesive layer and a metal layer deposited onto the adhesive layer.
  • the photonic devices are hermetically sealed according to various aspects of the present invention on the substrate material without using a separate package. Accordingly, any number of hermetically sealed photonic device submounts can be mass produced on wafers using the present invention.
  • Figure 1 is a top plan view of a photonic device submount hermetically sealed in accordance with various aspects of the present invention
  • Figure 2 is a side view of the photonic device submount shown in Figure 1;
  • Figure 3 is a bottom view of the photonic device submount shown in Figure 1 ;
  • Figure 4 is a bottom view of an alternative configuration of the photonic device submount shown in Figure 1 ;
  • Figure 5 is a side view of another alternative configuration of the photonic device submount shown in Figure 1 ;
  • Figure 6 is a side view of yet another alternative configuration of the photonic device submount shown in Figure 1 ;
  • Figure 7 is a top plan view of a plurality of photonic device submounts formed on a wafer in accordance with various aspects of the present invention;
  • Figure 8 A and 8B are orthogonal view of photonic device submounts mounted in ferrules in accordance with various aspects of the present invention.
  • Figure 9 is a top plan view of another photonic device submount flexibly and hermetically sealed in accordance with various aspects of the present invention.
  • Figure 10 is a side view of the photonic device submount shown in Figure 9;
  • Figure 11 is a side view of another configuration of the photonic device submount shown in Figure 9;
  • Figure 12 is a side view of yet another configuration of the photonic device submount shown in Figure 9;
  • Figure 13 is a top plan view of a plurality of photonic device submounts formed on a wafer in accordance with various aspects of the present invention.
  • Figure 14 is a side view of a photonic device submount hermetically sealed in accordance with various aspects of the present invention.
  • a flexible hermetic sealing system suitably provides for hermetically sealing photonic devices on a substrate material such as glass, silicon, ceramic, plastic, printed circuit board, and the like.
  • a substrate material such as glass, silicon, ceramic, plastic, printed circuit board, and the like.
  • the following description and related drawing figures describe and depict the sealing of a single photonic device submount according to various aspects of the present invention.
  • the present system can be used to seal any number of photonic device submounts on a wafer for mass production.
  • a photonic device submount 100 preferably includes a photonic device 101 suitably mounted to a substrate material 102 and suitably sealed in a hermetic seal 108.
  • the photonic device 101 is preferably mounted such that the light emitters (not shown) or light receivers (not shown) of the photonic device 101 faces down to transmit or to receive light through the substrate material 102.
  • the substrate material 102 is preferably formed from a material transmissive to light such as glass, plastic, and the like.
  • a photo-resist layer 302 is suitably formed on the back side of the substrate material 102 with an alignment holes 304 for attaching optical fibers.
  • the photo-resist layer 302 can be formed with an alignment slot 402 for attaching to an array of optical fibers.
  • the photo-resist layer 302 is depicted for use with the photonic device 101 having a single line of light emitters or light receivers, the photo-resist layer 302 can be configured with rows of alignment holes 304 or alignment slots 402 for use with the photonic device 101 having any number of lines or arrays of light emitters or light receivers.
  • the photo resist layer 302 facilitates passive alignment of optical fibers to the alignment holes 304 or alignment slot 402. Accordingly, the photonic device 101 need not be activated to align the optical fibers to the light emitters or the light receivers of the photonic device 101. In contrast, in active alignment, the photonic device 101 would need to be activated in order to determine the quality of the signal transmitted to or received from the optical fibers. Thus, passive alignment of optical fibers has the advantages of being less costly, less time consuming, and more conducive to mass production systems than active alignment. With reference to Figures 1 and 2, prior to the mounting of the photonic device 101 on the top side of the substrate material 102, a bonding pad 112 is suitably formed on the substrate material 102 using any convenient method.
  • signal lines 104 are also suitably formed on the substrate material 102 using any convenient method.
  • a conductive material such as gold, silver, copper, titanium, chromium, and the like, is deposited to form the bonding pad 112 and the signal lines 104.
  • the photonic device 101 when the photonic device 101 is mounted on the bonding pad 112, the photonic device 101 communicates with other components, other communication devices, and the like through the signal lines 104. Therefore, it should be appreciated that the number and configuration of the signals lines 104 can vary depending on the particular application. For example, when the photonic device 101 is configured with one light emitter or receiver, only one or two signal lines may be used for connecting the photonic device 101 to other components, other communication devices, and the like. Additionally, although the signal lines 104 are depicted in the present exemplary embodiment as extending from only one side of the substrate material 102, it should be recognized that any number of signal lines 104 can extend from any number of sides of the substrate material 102.
  • a dielectric layer 106 is then suitably formed around the area in which the photonic device 101 is to be mounted and over the signal lines 104.
  • the dielectric layer 106 electrically isolates the signal lines 104 from the flexible hermetic seal 108.
  • the dielectric layer 106 can be formed from any suitable nonconducting material using any convenient method.
  • an additional layer of glass is deposited onto the substrate material 102 to suitably form the dielectric layer 106.
  • the dielectric layer 106 is depicted in Figure 1 as surrounding the photonic device 101, the dielectric layer 106 can be formed to cover the signal lines 104 without surrounding the photonic device 101.
  • the shape and configuration of the dielectric layer 106 can vary depending on the particular application.
  • the flexible hermetic seal 108 is formed according to various aspects of the present invention by depositing layers of metal onto an adhesive layer. Accordingly, a removable "lift-off layer 110 is suitably formed in any areas which are to remain free of the deposited metal. After the flexible hermetic seal 108 is formed, the removable lift-off layer 110 can be peeled off to expose the protected areas.
  • the removable lift-off layer 110 is suitably formed over the portion of the signal lines 104 extending beyond the dielectric layer 106.
  • the removable lift-off layer 110 is peeled off and the exposed portion of the signal lines 104 can then be used for connecting to other components, other communication devices, and the like.
  • the removable lift-off layer 110 can be formed over the entire surface of the substrate 102 and the dielectric layer 106, then the areas which are to be covered by the flexible hermetic seal 108 can be etched away using any convenient method.
  • the removable lift-off layer 110 can include photoresist, tape, and the like.
  • a plurality of photonic device submounts 702 are formed in rows and columns on a wafer 700.
  • the order of processing of the bottom and the top of the wafer 700 can vary without deviating from the spirit and scope of the present invention. Accordingly, the top of the wafer 700 can be processed to suitably form the photonic device submounts 702, then the bottom of the wafer 700 can be processed to suitably form the alignment holes 304 or the alignment slots 402 for each of the photonic device submounts 702 ( Figures 3 and 4).
  • the photonic device 101 is suitably mounted on the bonding pad 112 using any convenient method.
  • the photonic device 101 is preferably bonded to the bonding pad 112 using a flip-chip bonding process.
  • the light emitters or the light receivers of the photonic device 101 are suitably aligned with the alignment holes 304 or the alignment slot 402 formed in the bottom of the substrate 102.
  • the hermetic seal 108 is suitably formed to seal the photonic device 101.
  • an adhesive layer 202 is deposited to cover the photonic device 101.
  • the adhesive layer 202 is an optical grade moisture resistant adhesive such as a high temperature epoxy.
  • the adhesive layer 202 is then cured using any suitable method.
  • the adhesive layer 202 can be placed into an oven to cure the adhesive layer 202. It should be appreciated that the temperature and the exposure time required to cure the adhesive layer 202 depends largely on the particular adhesive used.
  • a metal layer 204 is then deposited on top of the adhesive layer 202 using any convenient method, such as e- beam deposition, thermal deposition, sputtering, and the like.
  • the metal layer 204 adheres to the adhesive layer 202 to hermetically seal the photonic device 101.
  • the metal layer 204 can include any metal or combination of metals such as chromium, gold, nickel, silver, titanium, and the like.
  • the metal layer 204 can also include metallic solder.
  • the metal layer 204 is preferably chromium.
  • a metal layer 206 is suitably deposited on top of the metal layer 204.
  • the metal layer 206 can be deposited using any convenient method, such as e-beam deposition, thermal deposition, sputtering, and the like.
  • the metal layer 206 suitably adheres to the metal layer 204 to provide a stronger and more flexible hermetic seal.
  • the metal layer 206 is preferably gold, however, it should be appreciated that the metal layer 204 and the metal layer 206 can include any metal or combination of metals for any particular application.
  • the metal layer 206 can be formed using any combination of methods.
  • a relatively thin layer of gold can be formed using a deposition method.
  • a layer of approximately 2000 is preferably deposited.
  • a thicker layer of gold can then be formed using an electroplating method to form a thicker layer of gold on top of the initial thin layer of gold.
  • This method of combining a deposition method with an electroplating method has the advantage of reducing the cost of forming a thick layer of gold because an electroplating method is generally less costly than a deposition method, particularly for a precious metal such as gold.
  • a solder layer 502 is suitably deposited on top of the metal layer 206 using any convenient method.
  • the solder layer 502 can be electroplated to the metal layer 206 then reflowed to mix with the metal layer 206.
  • the metal layer 206 includes two layers of metal; a layer of nickel on top of the layer of chromium (the metal layer 204) and a layer of gold on top of the layer of nickel. Accordingly, when the solder layer 502 is reflowed, the solder layer 502 mixes with the layer of gold in the metal layer 206 and bonds with the layer of nickel in the metal layer 206. In this manner, the size of the hermetic seal 108 can be increased without using additional quantities of gold, which can be costly.
  • a protective layer 602 is suitably disposed on the solder layer 502 after reflowing the solder layer 502 to mix with the metal layer 206.
  • the protective layer 602 is preferably a conformable and flexible material, such as epoxy, polyamide, and the like, to protect the metal layer 204, the metal layer 206, and the solder layer 502 against scratching and cracking. It should be recognized that the protective layer 602 can be suitably applied to the metal layer 206 if only the metal layers 202 and 204 are to be used ( Figure 2). Similarly, the protective layer 602 can be suitably applied to the metal layer 202 if only the metal layer 202 is to be used.
  • the lift-off layer 110 is removed to expose the areas of the photonic device submount 100 which was protected from the metal deposition process used to form the hermetic seal 108. More particularly, with reference to Figure 2, the lift-off layer 110 is removed to expose the signal lines 104 for connecting to other components, other devices, and the like. Additionally, with reference to Figures 3 and
  • optical fibers are suitably aligned and connected to the alignment holes 304 or the alignment slot 402 for connecting to other components, other devices, and the like.
  • the photonic device submount 100 is suitably configured within a ferrule 800. More particularly, the photonic device submount 100 is suitably mounted to one end of the ferrule 800 such that the signal lines 104 can be suitably connected to other components through wires 802. Accordingly, the optical fibers are connected to the bottom side of the photonic device submount 100 which is oriented into the ferrule 800 as depicted in Figure 8. It should be appreciated that the ferrule 800 can include any convenient ferrule such as an MT ferrule. Additionally, although the photonic device submount 100 is depicted in Figure 8 as being connected to an array of wires 802, it should be appreciated that the photonic device submount 100 can be connected to any number of wires 802.
  • the photonic device submount 100 is connected to a single wire 804.
  • a plurality of photonic device submounts 702 can be formed on the wafer 700.
  • the steps described above for mounting and hermetically sealing the photonic device 101 on the substrate 102 ( Figures 1 and 2) can be repeated for each photonic device submounts 702 on the wafer 700.
  • the photonic device submounts 702 are then separated using any convenient method such as scribing, sawing, and the like. In this manner, hermetically sealed photonic device submounts can be suitably mass produced.
  • the flexible hermetic sealing process has thus far been described in conjunction with the photonic device submount 100 which is particularly suited for emitting or receiving light through the substrate 102 ( Figures 1 and 2).
  • the present invention can be used in conjunction with any type of photonic device submount configuration depending on the particular application.
  • the ensuing description and related drawings relate to a free space photonic device submount which emits or receives light through lenses rather than directly into optical fibers.
  • the ensuing description refers to a photonic device configured with light emitters to transmit light, for example, when the photonic device is a VCSEL.
  • a photonic device submount 900 preferably includes a photonic device 901 suitably mounted to a substrate material 902 and suitably sealed in a flexible hermetic seal 908.
  • the photonic device 901 is preferably mounted such that light emitters 916 of the photonic device 901 faces substantially vertically upward from the substrate material 102.
  • the substrate material 102 can include any suitable rigid material which is non-transmissive to light such as opaque ceramic, silicon, and the like.
  • the substrate material 102 can also include material which is transmissive to light such as glass, clear plastic, and the like.
  • the photonic device 901 is depicted as having a single row of light emitters 916, it should be recognized that the photonic device 901 can include any number of rows or arrays of light emitters without deviating from the spirit and scope of the present invention.
  • a bonding pad 901 and signal lines 904 are suitably formed on the substrate material 902 using any convenient method such as deposition, screen printing, and the like.
  • the signal lines 904 are depicted extending from only side of the substrate material 902, any number of signal lines 904 may extend from any number of sides of the substrate material 902.
  • a dielectric layer 906 is suitably formed around the area in which the photonic device 901 is to be mounted and over the signal lines 904.
  • the dielectric layer 906 electrically isolates the signal lines 904 from the flexible hermetic seal 908.
  • the dielectric layer 906 can be formed from any suitable nonconducting material using any convenient method.
  • the dielectric layer 106 is depicted in Figure 9 as surrounding the photonic device 901, the dielectric layer 906 can be formed to cover the signal lines 904 without surrounding the photonic device 901. Therefore, it should appreciated that the shape and configuration of the dielectric layer 906 can vary depending on the particular application.
  • the flexible hermetic seal 908 is formed according to various aspects of the present invention by depositing layers of metal onto an adhesive layer. Accordingly, a removable lift-off layer 910 is suitably formed in any areas which are to remain free of the deposited metal. After the flexible hermetic seal 908 is formed, the removable lift-off layer 910 can be peeled off to expose the protected areas. For example, in the present exemplary embodiment, the removable lift-off layer 910 is suitably formed over the portion of the signal lines 904 extending beyond the dielectric layer 906.
  • the removable lift-off layer 910 is peeled off and the exposed portion of the signal lines 904 can then be used for connected to other components, other communication devices, and the like.
  • the removable lift-off layer 910 can be formed over the entire surface of the substrate 902 and the dielectric layer 906, then the areas which are to be covered by the flexible hermetic seal 908 can be etched away using any convenient method.
  • the removable lift-off layer 910 includes photo- resist, tape, and the like.
  • the processing steps described thus far can be performed as a planar process; meaning that the above described processing steps can be performed on any number of photonic device submounts formed on a large substrate area such as a wafer. Accordingly, with reference to Figure 13, a plurality of photonic device submounts 1302 are formed in rows and columns on a wafer 1300.
  • the photonic device 901 is suitably mounted on the bonding pad 912 using any convenient method such as a flip-chip bonding process.
  • a spacer 914 is then suitably disposed to support a cover 1010 over the photonic device 901.
  • the spacer 914 according to various aspects of the present invention suitably provides for a gap between the photonic device 901 and the cover 1010. Accordingly, the amount of the gap formed between the photonic device 901 and the cover 1010 can be adjusted by adjusting the height of the spacer 914. It should be recognized that the appropriate amount of gap between the photonic device 901 and the cover 1010 depends largely on the particular application.
  • the spacer 914 can be formed from any suitable rigid material and formed in any size and configuration to support the cover 1010.
  • the spacer 914 is preferably formed from a material with a small thermal expansion characteristic or a thermal expansion characteristic similar to the substrate material 901, such as ceramic, glass, and the like.
  • the cover 1010 includes lenses 1008 through which light can be emitted from the photonic device 901. Accordingly, the lenses 1008 are formed on the cover 1010 to align with the light emitters 916 of the photonic device 901.
  • the lenses 1008 can include any convenient lenses, such as digital lenses, holographic lenses, and the like, and can be formed from any material transmissive to light.
  • the cover 1010 may also be formed from a material transmissive to light, in which case the lenses 1008 can be etched onto the cover 1010. Alternatively, the cover 1010 can be formed from a material non-transmissive to light, in which case the lenses 1008 are suitably fixed into the cover 1010.
  • cover 1010 and the spacer 914 can be configured as a single unit such as a cap.
  • a positioning guide (not shown), such as a pin, a ring, and the like, can be disposed on the dielectric layer 906 to assist in positioning the spacer 914 on the dielectric layer 906.
  • a photonic device submount 1400 can be configured with a substrate 1402 formed with a recess 1414. Accordingly, a flat cover 1410 can be sealed with hermetic seal 1408 over a photonic device 1401 without using a spacer.
  • the cover 1010 is suitably covered with a lift-off layer to protect the cover 1010, then the flexible hermetic seal 908 is suitably formed to seal the photonic device 901 and to hold the cover 1010 in place over the photonic device 901.
  • an adhesive layer 1002 is deposited adjacent to the spacer 914 and the edges of the cover 1010. As the adhesive layer 1002 remains flexible until it is cured, the cover 1010 can be adjusted to ensure that the lenses 1008 are aligned with the light emitters 916 on the photonic device 901.
  • the adhesive layer 1002 is an optical grade moisture resistant adhesive such as a high temperature epoxy.
  • the adhesive layer 1002 is then cured using any convenient method.
  • the adhesive layer 1002 can be placed into an oven to cure the adhesive layer 1002. It should be appreciated that the oven temperature and the exposure time required to cure the adhesive layer 1002 depends largely on the particular adhesive used.
  • a metal layer 1004 is then deposited on top of the adhesive layer 1002 using any convenient method, such as e-beam deposition, thermal deposition, sputtering, and the like.
  • the metal layer 1004 adheres to the adhesive layer 1002 to hermetically seal the photonic device 901.
  • the metal layer 1004 can include any metal or combination of metals such as chromium, gold, nickel, silver, titanium, and the like. Additionally, the metal layer 1004 can also include metallic solder. In the present exemplary embodiment, the metal layer 1004 is preferably chromium.
  • a metal layer 1006 is then suitably deposited on top of the metal layer 1004.
  • the metal layer 1006 can be deposited using any convenient method, such as e-beam deposition, thermal deposition, sputtering, and the like.
  • the metal layer 1006 suitably adheres to the metal layer 1004 to provide a stronger and more flexible hermetic seal.
  • the metal layer 1006 is preferably gold, however, it should be appreciated that the metal layer 1004 and the metal layer 1006 can include any metal or combination of metals for any particular application. Additionally, it should be appreciated that the metal layer 1006 can be formed using any combination of methods.
  • a relatively thin layer of gold can be formed using a deposition method.
  • a layer of approximately 2000 is preferably deposited.
  • a thicker layer of gold can then be formed using an electroplating method to form the thicker layer of gold on top of the initial thin layer of gold.
  • This method of combining a deposition method with an electroplating method has the advantage of reducing the cost of forming a thick layer of gold because an electroplating method is generally less costly than a deposition method, particularly for a precious metal such as gold.
  • a solder layer 1102 is suitably deposited on top of the layer 1006 using any convenient method.
  • the solder layer 1102 can be electroplated to the metal layer 1006 then reflowed to mix with the metal layer 1006.
  • the metal layer 206 includes two layers of metal; a layer of nickel on top of the layer of chromium (the metal layer 1004) and a layer of gold on top of the layer of nickel.
  • the solder layer 1102 mixes with the layer of gold in the metal layer 1006 and bonds with the layer of nickel in the metal layer 1006. In this manner, the size of the hermetic seal 908 can be increased without using additional quantities of gold, which is costly.
  • a protective layer 1202 is suitably disposed on the solder layer 1102 after reflowing the solder layer 1002 to mix with the metal layer 1006.
  • the protective layer 1202 is preferably a conformable and flexible material, such as epoxy, polyamide, and the like, to protect the metal layer 1004, the metal layer 1006, and the solder layer 1102 against scratching and cracking due to temperature variations. It should be recognized that the protective layer 1202 can be applied to the metal layer 1006 if only the metal layers 1002 and 1004 are to be used ( Figure 10). Similarly, the protectively layer 1202 can be applied to the metal layer 1002 if only the metal layer 1002 is to be used.
  • the lift-off layer 910 is removed to expose the areas of the photonic device submount 900 which was protected from the metal deposition process used to form the hermetic seal 908. More particularly, with reference to Figure 10, the lift-off layer 910 is removed to expose the signal lines 904 for connecting to other components, other devices, and the like. Additionally, the lift-off layer which was placed on top of the cover 1010 is also removed. With reference to Figure 13, as described above, the plurality of photonic device submounts 1302 can be formed on the wafer 1300.
  • the steps described above for mounting and hermetically sealing the photonic device 901 on the substrate 902 can be repeated for each photonic device submounts 1302 on the wafer 1300.
  • the photonic device submounts 1302 are then separated using any convenient method such as scribing, sawing, and the like. In this manner, hermetically sealed photonic device submounts can be suitably mass produced.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
EP99960433A 1998-12-30 1999-11-18 Method and apparatus for hermetically sealing photonic devices Withdrawn EP1145393A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/224,210 US6588949B1 (en) 1998-12-30 1998-12-30 Method and apparatus for hermetically sealing photonic devices
US224210 1998-12-30
PCT/US1999/027259 WO2000041281A1 (en) 1998-12-30 1999-11-18 Method and apparatus for hermetically sealing photonic devices

Publications (1)

Publication Number Publication Date
EP1145393A1 true EP1145393A1 (en) 2001-10-17

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EP99960433A Withdrawn EP1145393A1 (en) 1998-12-30 1999-11-18 Method and apparatus for hermetically sealing photonic devices

Country Status (4)

Country Link
US (2) US6588949B1 (ja)
EP (1) EP1145393A1 (ja)
JP (1) JP2002534813A (ja)
WO (1) WO2000041281A1 (ja)

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US6932522B2 (en) 2005-08-23

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