DE69841964D1 - Toroidförmige Reaktivgasquelle mit niedrigem Feld - Google Patents

Toroidförmige Reaktivgasquelle mit niedrigem Feld

Info

Publication number
DE69841964D1
DE69841964D1 DE69841964T DE69841964T DE69841964D1 DE 69841964 D1 DE69841964 D1 DE 69841964D1 DE 69841964 T DE69841964 T DE 69841964T DE 69841964 T DE69841964 T DE 69841964T DE 69841964 D1 DE69841964 D1 DE 69841964D1
Authority
DE
Germany
Prior art keywords
toroidal
gas source
reactive gas
low field
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841964T
Other languages
English (en)
Inventor
Donald K Smith
Xing Chen
William Holber
Eric Georgelis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MKS Instruments Inc
Original Assignee
MKS Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25382309&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69841964(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by MKS Instruments Inc filed Critical MKS Instruments Inc
Application granted granted Critical
Publication of DE69841964D1 publication Critical patent/DE69841964D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/16Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE69841964T 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld Expired - Lifetime DE69841964D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/883,281 US6150628A (en) 1997-06-26 1997-06-26 Toroidal low-field reactive gas source

Publications (1)

Publication Number Publication Date
DE69841964D1 true DE69841964D1 (de) 2010-12-02

Family

ID=25382309

Family Applications (8)

Application Number Title Priority Date Filing Date
DE69811497T Expired - Lifetime DE69811497T2 (de) 1997-06-26 1998-06-23 Torusförmige reaktivgasquelle mit niedriger feldstärke
DE69842098T Expired - Lifetime DE69842098D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841964T Expired - Lifetime DE69841964D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841963T Expired - Lifetime DE69841963D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841962T Expired - Lifetime DE69841962D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841965T Expired - Lifetime DE69841965D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69842259T Expired - Lifetime DE69842259D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841961T Expired - Lifetime DE69841961D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69811497T Expired - Lifetime DE69811497T2 (de) 1997-06-26 1998-06-23 Torusförmige reaktivgasquelle mit niedriger feldstärke
DE69842098T Expired - Lifetime DE69842098D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld

Family Applications After (5)

Application Number Title Priority Date Filing Date
DE69841963T Expired - Lifetime DE69841963D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841962T Expired - Lifetime DE69841962D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841965T Expired - Lifetime DE69841965D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69842259T Expired - Lifetime DE69842259D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld
DE69841961T Expired - Lifetime DE69841961D1 (de) 1997-06-26 1998-06-23 Toroidförmige Reaktivgasquelle mit niedrigem Feld

Country Status (5)

Country Link
US (5) US6150628A (de)
EP (9) EP1313128B1 (de)
JP (5) JP4070152B2 (de)
DE (8) DE69811497T2 (de)
WO (1) WO1999000823A1 (de)

Families Citing this family (373)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US20030118491A1 (en) * 1998-08-26 2003-06-26 Frieze Marcia A. Filtered gas plasma sterilization container with improved circulation
JP2003506888A (ja) * 1999-08-06 2003-02-18 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド ガスおよび材料を処理する誘導結合環状プラズマ源装置およびその方法
US7838850B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. External cathode ion source
WO2001043157A1 (en) * 1999-12-13 2001-06-14 Semequip, Inc. Ion implantation ion source, system and method
US20070107841A1 (en) * 2000-12-13 2007-05-17 Semequip, Inc. Ion implantation ion source, system and method
KR100767762B1 (ko) * 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
DE10010707C2 (de) * 2000-03-04 2002-01-10 Philips Corp Intellectual Pty Piezoelektrischer Aktuator
US6679981B1 (en) * 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6835278B2 (en) * 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US20070042580A1 (en) * 2000-08-10 2007-02-22 Amir Al-Bayati Ion implanted insulator material with reduced dielectric constant
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US6410449B1 (en) 2000-08-11 2002-06-25 Applied Materials, Inc. Method of processing a workpiece using an externally excited torroidal plasma source
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US20050230047A1 (en) * 2000-08-11 2005-10-20 Applied Materials, Inc. Plasma immersion ion implantation apparatus
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
JP5204941B2 (ja) * 2000-08-11 2013-06-05 アプライド マテリアルズ インコーポレイテッド 外部から励磁されるトロイダルプラズマチャンバ
US7479456B2 (en) * 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US6453842B1 (en) 2000-08-11 2002-09-24 Applied Materials Inc. Externally excited torroidal plasma source using a gas distribution plate
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US6468388B1 (en) 2000-08-11 2002-10-22 Applied Materials, Inc. Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US6494986B1 (en) 2000-08-11 2002-12-17 Applied Materials, Inc. Externally excited multiple torroidal plasma source
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US6348126B1 (en) 2000-08-11 2002-02-19 Applied Materials, Inc. Externally excited torroidal plasma source
US6551446B1 (en) 2000-08-11 2003-04-22 Applied Materials Inc. Externally excited torroidal plasma source with a gas distribution plate
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
WO2002052060A1 (en) * 2000-12-26 2002-07-04 Valery Godyak Inductively coupled plasma reactor
US6634313B2 (en) 2001-02-13 2003-10-21 Applied Materials, Inc. High-frequency electrostatically shielded toroidal plasma and radical source
JP4799748B2 (ja) * 2001-03-28 2011-10-26 忠弘 大見 マイクロ波プラズマプロセス装置、プラズマ着火方法、プラズマ形成方法及びプラズマプロセス方法
US6755150B2 (en) * 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
WO2003018867A1 (en) * 2001-08-29 2003-03-06 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
JP4772232B2 (ja) * 2001-08-29 2011-09-14 アジレント・テクノロジーズ・インク 高周波増幅回路及び高周波増幅回路の駆動方法
US7132996B2 (en) * 2001-10-09 2006-11-07 Plasma Control Systems Llc Plasma production device and method and RF driver circuit
US7100532B2 (en) * 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US7084832B2 (en) * 2001-10-09 2006-08-01 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US6991739B2 (en) * 2001-10-15 2006-01-31 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
KR100481313B1 (ko) 2001-11-09 2005-04-07 최대규 유도결합 플라즈마 반응기
US6869880B2 (en) * 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US6761804B2 (en) 2002-02-11 2004-07-13 Applied Materials, Inc. Inverted magnetron
JP3641785B2 (ja) * 2002-08-09 2005-04-27 株式会社京三製作所 プラズマ発生用電源装置
US20030015965A1 (en) * 2002-08-15 2003-01-23 Valery Godyak Inductively coupled plasma reactor
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
KR100542740B1 (ko) * 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
US6927358B2 (en) * 2003-01-31 2005-08-09 Advanced Energy Industries, Inc. Vacuum seal protection in a dielectric break
US7355687B2 (en) * 2003-02-20 2008-04-08 Hunter Engineering Company Method and apparatus for vehicle service system with imaging components
DE10308539B3 (de) * 2003-02-27 2004-06-03 Bauer Maschinen Gmbh Fräsvorrichtung zum Fräsen von Schlitzen im Boden
US20040192059A1 (en) * 2003-03-28 2004-09-30 Mosel Vitelic, Inc. Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack
US6872909B2 (en) * 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
US8053700B2 (en) * 2003-04-16 2011-11-08 Mks Instruments, Inc. Applicators and cooling systems for a plasma device
US8409400B2 (en) * 2003-05-07 2013-04-02 Gen Co., Ltd. Inductive plasma chamber having multi discharge tube bridge
US20040237897A1 (en) * 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
US7115185B1 (en) 2003-09-16 2006-10-03 Advanced Energy Industries, Inc. Pulsed excitation of inductively coupled plasma sources
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
KR100883148B1 (ko) 2003-12-12 2009-02-10 세미이큅, 인코포레이티드 이온 주입시 설비의 가동 시간을 늘리기 위한 방법과 장치
JP2007073539A (ja) * 2003-12-18 2007-03-22 Tokyo Electron Ltd 成膜方法およびプラズマ発生方法、基板処理装置
US20050194099A1 (en) * 2004-03-03 2005-09-08 Jewett Russell F.Jr. Inductively coupled plasma source using induced eddy currents
EP1733467A1 (de) * 2004-03-12 2006-12-20 MKS Instruments, Inc. Steuerschaltung für ein schaltnetzteil
US20050258137A1 (en) * 2004-03-24 2005-11-24 Sawin Herbert H Remote chamber methods for removing surface deposits
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US7358192B2 (en) * 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US7307375B2 (en) * 2004-07-09 2007-12-11 Energetiq Technology Inc. Inductively-driven plasma light source
US7183717B2 (en) * 2004-07-09 2007-02-27 Energetiq Technology Inc. Inductively-driven light source for microscopy
US20060017387A1 (en) * 2004-07-09 2006-01-26 Energetiq Technology Inc. Inductively-driven plasma light source
US7948185B2 (en) * 2004-07-09 2011-05-24 Energetiq Technology Inc. Inductively-driven plasma light source
US7199384B2 (en) * 2004-07-09 2007-04-03 Energetiq Technology Inc. Inductively-driven light source for lithography
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US20060093730A1 (en) * 2004-11-03 2006-05-04 Applied Materials, Inc. Monitoring a flow distribution of an energized gas
WO2006078340A2 (en) * 2004-11-08 2006-07-27 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US20060118240A1 (en) * 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
US20060144820A1 (en) * 2004-12-30 2006-07-06 Sawin Herbert H Remote chamber methods for removing surface deposits
US20060144819A1 (en) * 2004-12-30 2006-07-06 Sawin Herbert H Remote chamber methods for removing surface deposits
US20060182886A1 (en) * 2005-02-15 2006-08-17 Guidotti Emmanuel P Method and system for improved delivery of a precursor vapor to a processing zone
KR101121418B1 (ko) * 2005-02-17 2012-03-16 주성엔지니어링(주) 토로이드형 코어를 포함하는 플라즈마 발생장치
AU2006223254B2 (en) * 2005-03-11 2012-04-26 Perkinelmer U.S. Llc Plasmas and methods of using them
US20060249507A1 (en) * 2005-04-11 2006-11-09 Watlow Electric Manufacturing Company Modular controller user interface and method
US20060230297A1 (en) * 2005-04-11 2006-10-12 Watlow Electric Manufacturing Company Electronic device mounting assembly and method
US20060229740A1 (en) * 2005-04-11 2006-10-12 Watlow Electric Manufacturing Company Portable user interface assembly and method
US7652888B2 (en) * 2005-04-11 2010-01-26 Watlow Electric Manufacturing Company Controller housing with connector retention assembly and method
US8044329B2 (en) * 2005-04-11 2011-10-25 Watlow Electric Manufacturing Company Compact limiter and controller assembly and method
US7428915B2 (en) 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
EP1727186B1 (de) * 2005-05-23 2012-01-25 New Power Plasma Co., Ltd. Plasmakammer mit Entladung induzierender Brücke
DE102005040596B4 (de) * 2005-06-17 2009-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Entfernung einer dotierten Oberflächenschicht an Rückseiten von kristallinen Silizium-Solarwafern
KR100720989B1 (ko) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US20070051388A1 (en) 2005-09-06 2007-03-08 Applied Materials, Inc. Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
JP2009510698A (ja) * 2005-09-30 2009-03-12 エナジェティック・テクノロジー・インコーポレーテッド 誘導駆動型プラズマ光源
US20070080141A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. Low-voltage inductively coupled source for plasma processing
US7353771B2 (en) * 2005-11-07 2008-04-08 Mks Instruments, Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
US7679024B2 (en) * 2005-12-23 2010-03-16 Lam Research Corporation Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber
US7562638B2 (en) * 2005-12-23 2009-07-21 Lam Research Corporation Methods and arrangement for implementing highly efficient plasma traps
US7554053B2 (en) * 2005-12-23 2009-06-30 Lam Research Corporation Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system
TW200742506A (en) * 2006-02-17 2007-11-01 Noritsu Koki Co Ltd Plasma generation apparatus and work process apparatus
US7524750B2 (en) 2006-04-17 2009-04-28 Applied Materials, Inc. Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
JP5257917B2 (ja) * 2006-04-24 2013-08-07 株式会社ニューパワープラズマ 多重マグネチックコアが結合された誘導結合プラズマ反応器
US20080083701A1 (en) * 2006-10-04 2008-04-10 Mks Instruments, Inc. Oxygen conditioning of plasma vessels
US20080118663A1 (en) * 2006-10-12 2008-05-22 Applied Materials, Inc. Contamination reducing liner for inductively coupled chamber
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
US7969096B2 (en) 2006-12-15 2011-06-28 Mks Instruments, Inc. Inductively-coupled plasma source
CN101583736A (zh) * 2007-01-19 2009-11-18 应用材料股份有限公司 浸没式等离子体室
JP2009006350A (ja) * 2007-06-27 2009-01-15 Sony Corp レーザ加工装置とその加工方法、デブリ回収機構とその回収方法、並びに表示パネルの製造方法
WO2009039382A1 (en) 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
KR101595686B1 (ko) * 2007-10-19 2016-02-18 엠케이에스 인스트루먼츠, 인코포레이티드 높은 가스 유량 공정을 위한 환형 플라즈마 챔버
WO2009082763A2 (en) * 2007-12-25 2009-07-02 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
WO2009146432A1 (en) * 2008-05-30 2009-12-03 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
WO2009146439A1 (en) * 2008-05-30 2009-12-03 Colorado State University Research Foundation System, method and apparatus for generating plasma
US7914603B2 (en) * 2008-06-26 2011-03-29 Mks Instruments, Inc. Particle trap for a plasma source
US20100074810A1 (en) * 2008-09-23 2010-03-25 Sang Hun Lee Plasma generating system having tunable plasma nozzle
US20100101727A1 (en) * 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
US7921804B2 (en) * 2008-12-08 2011-04-12 Amarante Technologies, Inc. Plasma generating nozzle having impedance control mechanism
WO2010089670A1 (en) 2009-02-04 2010-08-12 General Fusion, Inc. Systems and methods for compressing plasma
US20100201272A1 (en) * 2009-02-09 2010-08-12 Sang Hun Lee Plasma generating system having nozzle with electrical biasing
US8692466B2 (en) * 2009-02-27 2014-04-08 Mks Instruments Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
KR101507738B1 (ko) 2009-02-27 2015-04-06 주식회사 뉴파워 프라즈마 플라즈마 점화와 전력 제어를 위한 방법 및 장치
US20100252047A1 (en) 2009-04-03 2010-10-07 Kirk Seth M Remote fluorination of fibrous filter webs
US20100254853A1 (en) * 2009-04-06 2010-10-07 Sang Hun Lee Method of sterilization using plasma generated sterilant gas
JP2013503430A (ja) * 2009-08-27 2013-01-31 モザイク・クリスタルズ・リミテッド 高真空チャンバー用貫通型プラズマ発生装置
US8222822B2 (en) * 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
US8771538B2 (en) * 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) * 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US8282906B2 (en) * 2009-12-23 2012-10-09 3M Innovative Properties Company Remote plasma synthesis of metal oxide nanoparticles
US8124942B2 (en) * 2010-02-16 2012-02-28 Fei Company Plasma igniter for an inductively coupled plasma ion source
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
AU2010349785B2 (en) 2010-03-31 2014-02-27 Colorado State University Research Foundation Liquid-gas interface plasma device
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
KR100989316B1 (ko) 2010-06-25 2010-10-25 이창경 플라즈마-강화 화학 증착장치
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) * 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US8624501B2 (en) * 2010-12-08 2014-01-07 Mks Instruments, Inc. Measuring and controlling parameters of a plasma generator
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9263237B2 (en) * 2011-02-22 2016-02-16 Gen Co., Ltd. Plasma processing apparatus and method thereof
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8884525B2 (en) * 2011-03-22 2014-11-11 Advanced Energy Industries, Inc. Remote plasma source generating a disc-shaped plasma
US8497211B2 (en) 2011-06-24 2013-07-30 Applied Materials, Inc. Integrated process modulation for PSG gapfill
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US10049881B2 (en) * 2011-08-10 2018-08-14 Applied Materials, Inc. Method and apparatus for selective nitridation process
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US8872525B2 (en) 2011-11-21 2014-10-28 Lam Research Corporation System, method and apparatus for detecting DC bias in a plasma processing chamber
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US20130146225A1 (en) * 2011-12-08 2013-06-13 Mks Instruments, Inc. Gas injector apparatus for plasma applicator
US9279722B2 (en) 2012-04-30 2016-03-08 Agilent Technologies, Inc. Optical emission system including dichroic beam combiner
WO2014007472A1 (en) * 2012-07-03 2014-01-09 Plasmart Inc. Plasma generation apparatus and plasma generation method
KR101446159B1 (ko) 2012-07-03 2014-10-02 주식회사 플라즈마트 플라즈마 발생 장치 및 플라즈마 발생 방법
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
RU2505949C1 (ru) * 2012-08-03 2014-01-27 Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук (ИТ СО РАН) Трансформаторный плазматрон низкого давления для ионно-плазменной обработки поверхности материалов
US20140062285A1 (en) 2012-08-29 2014-03-06 Mks Instruments, Inc. Method and Apparatus for a Large Area Inductive Plasma Source
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8944003B2 (en) * 2012-11-16 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Remote plasma system and method
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
KR102009513B1 (ko) * 2013-03-14 2019-08-09 엠케이에스 인스트루먼츠, 인코포레이티드 토로이달 플라즈마 저감 장치 및 방법
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US20140272108A1 (en) 2013-03-15 2014-09-18 Plasmability, Llc Toroidal Plasma Processing Apparatus
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
CN105474362B (zh) 2013-08-16 2018-05-25 应用材料公司 用于高温低压力环境的细长的容性耦合的等离子体源
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9155184B2 (en) * 2013-11-18 2015-10-06 Applied Materials, Inc. Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9240308B2 (en) * 2014-03-06 2016-01-19 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
KR101548922B1 (ko) * 2014-03-13 2015-09-02 주식회사 테라텍 고밀도 구속 플라즈마 소스 장치
JP6387635B2 (ja) * 2014-03-17 2018-09-12 株式会社リコー プラズマ発生装置及び表面改質装置
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9336997B2 (en) 2014-03-17 2016-05-10 Applied Materials, Inc. RF multi-feed structure to improve plasma uniformity
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9653266B2 (en) 2014-03-27 2017-05-16 Mks Instruments, Inc. Microwave plasma applicator with improved power uniformity
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9533909B2 (en) 2014-03-31 2017-01-03 Corning Incorporated Methods and apparatus for material processing using atmospheric thermal plasma reactor
US9550694B2 (en) 2014-03-31 2017-01-24 Corning Incorporated Methods and apparatus for material processing using plasma thermal source
US9284210B2 (en) 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
RU2558728C1 (ru) * 2014-05-29 2015-08-10 Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук (ИТ СО РАН) Комбинированный индукционно-дуговой плазмотрон и способ поджига индукционного разряда
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
JP5729514B1 (ja) * 2014-06-14 2015-06-03 プラスウェア株式会社 プラズマ発生装置、液上溶融方法及び給電装置
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
BR112017003327B1 (pt) 2014-08-19 2021-01-19 General Fusion Inc. sistema e método para controlar campo magnético de plasma
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US10083818B2 (en) 2014-09-24 2018-09-25 Applied Materials, Inc. Auto frequency tuned remote plasma source
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US20160200618A1 (en) 2015-01-08 2016-07-14 Corning Incorporated Method and apparatus for adding thermal energy to a glass melt
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9736920B2 (en) * 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
TWI670749B (zh) 2015-03-13 2019-09-01 美商應用材料股份有限公司 耦接至工藝腔室的電漿源
US10224186B2 (en) 2015-03-13 2019-03-05 Aes Global Holdings, Pte. Ltd Plasma source device and methods
CN107810542A (zh) 2015-05-21 2018-03-16 普拉斯玛比利提有限责任公司 具有成形工件夹具的环形等离子体处理装置
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
JP6548991B2 (ja) * 2015-08-28 2019-07-24 株式会社ダイヘン プラズマ生成装置
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
ES2814004T3 (es) 2016-08-09 2021-03-25 John Bean Technologies Corp Aparato y procedimiento de procesamiento de radiofrecuencia
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
JP6746865B2 (ja) 2016-09-23 2020-08-26 株式会社ダイヘン プラズマ生成装置
JP6736443B2 (ja) * 2016-09-30 2020-08-05 株式会社ダイヘン プラズマ発生装置
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
DE102018204585A1 (de) * 2017-03-31 2018-10-04 centrotherm international AG Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10264663B1 (en) 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10811144B2 (en) * 2017-11-06 2020-10-20 General Fusion Inc. System and method for plasma generation and compression
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP7301075B2 (ja) 2018-06-14 2023-06-30 エムケーエス インストゥルメンツ,インコーポレイテッド リモートプラズマ源用のラジカル出力モニタ及びその使用方法
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US11019715B2 (en) 2018-07-13 2021-05-25 Mks Instruments, Inc. Plasma source having a dielectric plasma chamber with improved plasma resistance
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US10553403B1 (en) 2019-05-08 2020-02-04 Mks Instruments, Inc. Polygonal toroidal plasma source
US10886104B2 (en) 2019-06-10 2021-01-05 Advanced Energy Industries, Inc. Adaptive plasma ignition
CN110718437A (zh) * 2019-09-16 2020-01-21 明远精密科技股份有限公司 远距电浆产生装置
US11623197B2 (en) * 2020-01-23 2023-04-11 Lyten, Inc. Complex modality reactor for materials production and synthesis
US11688584B2 (en) 2020-04-29 2023-06-27 Advanced Energy Industries, Inc. Programmable ignition profiles for enhanced plasma ignition
US11776793B2 (en) 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate
US12068134B2 (en) 2021-01-29 2024-08-20 Applied Materials, Inc. Digital control of plasma processing
US12027426B2 (en) 2021-01-29 2024-07-02 Applied Materials, Inc. Image-based digital control of plasma processing
US20240196506A1 (en) * 2022-12-08 2024-06-13 Hamamatsu Photonics K.K. Inductively Coupled Plasma Light Source with Switched Power Supply

Family Cites Families (178)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3054742A (en) * 1956-10-26 1962-09-18 Atomic Energy Authority Uk Gas discharge apparatus
NL228790A (de) 1957-06-20
FR1207566A (fr) * 1958-06-26 1960-02-17 Trt Telecom Radio Electr Perfectionnements aux dispositifs d'accord automatique sur une charge largement variable
US3343022A (en) * 1965-03-16 1967-09-19 Lockheed Aircraft Corp Transpiration cooled induction plasma generator
US3278384A (en) 1965-04-13 1966-10-11 Lenard Andrew Negative "v" stellarator
US3509500A (en) * 1966-12-05 1970-04-28 Avco Corp Automatic digital tuning apparatus
US3500118A (en) 1967-07-17 1970-03-10 Gen Electric Electrodeless gaseous electric discharge devices utilizing ferrite cores
US3433705A (en) * 1968-02-28 1969-03-18 Atomic Energy Commission Stellarator having multipole magnets
US3663361A (en) 1970-02-17 1972-05-16 Atomic Energy Commission Nuclear fusion device of the air-core tokamak type
US3663362A (en) * 1970-12-22 1972-05-16 Atomic Energy Commission Controlled fusion reactor
USH554H (en) 1972-03-02 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Toroidal reactor
US3794941A (en) * 1972-05-08 1974-02-26 Hughes Aircraft Co Automatic antenna impedance tuner including digital control circuits
US3906405A (en) * 1974-07-01 1975-09-16 Motorola Inc Tunable antenna coupling circuit
US5099100A (en) 1974-08-16 1992-03-24 Branson International Plasma Corporation Plasma etching device and process
FR2290126A1 (fr) 1974-10-31 1976-05-28 Anvar Perfectionnements apportes aux dispositifs d'excitation, par des ondes hf, d'une colonne de gaz enfermee dans une enveloppe
US3987334A (en) 1975-01-20 1976-10-19 General Electric Company Integrally ballasted electrodeless fluorescent lamp
US4057462A (en) 1975-02-26 1977-11-08 The United States Of America As Represented By The United States Energy Research And Development Administration Radio frequency sustained ion energy
US4110595A (en) * 1975-06-19 1978-08-29 The United States Of America As Represented By The United States Department Of Energy High-frequency plasma-heating apparatus
US4073680A (en) * 1975-06-26 1978-02-14 The United States Of America As Represented By The United States Department Of Energy Toroidal band limiter for a plasma containment device
JPS5211175A (en) 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus
US4263096A (en) * 1976-02-02 1981-04-21 The United States Of America As Represented By The United States Department Of Energy Toroidal magnet system
US4088926A (en) 1976-05-10 1978-05-09 Nasa Plasma cleaning device
US4095198A (en) * 1977-01-31 1978-06-13 Gte Sylvania Incorporated Impedance-matching network
US4859399A (en) 1977-10-13 1989-08-22 Fdx Patents Holding Company, N.V. Modular fusion power apparatus using disposable core
US4180763A (en) 1978-01-25 1979-12-25 General Electric Company High intensity discharge lamp geometries
US4201960A (en) * 1978-05-24 1980-05-06 Motorola, Inc. Method for automatically matching a radio frequency transmitter to an antenna
US4292125A (en) * 1978-08-21 1981-09-29 Massachusetts Institute Of Technology System and method for generating steady state confining current for a toroidal plasma fusion reactor
US4252609A (en) 1978-11-24 1981-02-24 The United States Of America As Represented By The United States Department Of Energy Crossed-field divertor for a plasma device
US4285800A (en) 1979-04-18 1981-08-25 Branson International Plasma Corp. Gas plasma reactor for circuit boards and the like
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
SU957744A1 (ru) * 1980-06-09 1996-02-10 Всесоюзный научно-исследовательский, проектно-конструкторский и технологический институт токов высокой частоты им.В.П.Вологдина Трансформаторный плазмотрон
US4324611A (en) 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
US4368092A (en) 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
JPS57174467A (en) 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
GB2098138B (en) 1981-05-07 1984-11-14 Hitachi Shipbuilding Eng Co Slurry carrying ship with drainage devices
US4350578A (en) 1981-05-11 1982-09-21 International Business Machines Corporation Cathode for etching
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
US4486722A (en) 1982-02-18 1984-12-04 Rockwell International Corporation Pin diode switched impedance matching network having diode driver circuits transparent to RF potential
US4431901A (en) * 1982-07-02 1984-02-14 The United States Of America As Represented By The United States Department Of Energy Induction plasma tube
US4486723A (en) 1983-01-06 1984-12-04 Rca Corporation Diode switching system for a selectable impedance matching network
US4601871A (en) * 1983-05-17 1986-07-22 The United States Of America As Represented By The United States Department Of Energy Steady state compact toroidal plasma production
JPS59221694A (ja) * 1983-05-31 1984-12-13 株式会社日立製作所 核融合装置用真空容器
US4626400A (en) 1983-06-01 1986-12-02 The United States Of America As Represented By The United States Department Of Energy Variable control of neutron albedo in toroidal fusion devices
JPS6050486A (ja) 1983-08-30 1985-03-20 三菱電機株式会社 核融合装置
JPS6048195U (ja) * 1983-09-09 1985-04-04 三菱重工業株式会社 真空容器の絶縁シ−ル装置
JPS6056298U (ja) * 1983-09-26 1985-04-19 株式会社日立製作所 核融合装置用真空容器
USH268H (en) * 1984-03-20 1987-05-05 The United States Of America As Represented By The United States Department Of Energy Elmo bumpy square plasma confinement device
JPS611024A (ja) * 1984-06-12 1986-01-07 Mitsubishi Electric Corp 半導体回路製造装置
US4668366A (en) 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor
JPS6180088A (ja) * 1984-09-28 1986-04-23 株式会社東芝 核融合装置の真空容器
JPS61139029A (ja) 1984-12-10 1986-06-26 Mitsubishi Electric Corp シリコンイオンビ−ムによる加工方法
JPH0697660B2 (ja) * 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
US4794217A (en) 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
US4631105A (en) 1985-04-22 1986-12-23 Branson International Plasma Corporation Plasma etching apparatus
US4680694A (en) 1985-04-22 1987-07-14 National Distillers And Chemical Corporation Ozonator power supply
US4793975A (en) 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
US4679007A (en) * 1985-05-20 1987-07-07 Advanced Energy, Inc. Matching circuit for delivering radio frequency electromagnetic energy to a variable impedance load
DE3522569A1 (de) 1985-06-24 1987-01-02 Metallgesellschaft Ag Stromversorgung fuer ein elektrofilter
CA1246762A (en) 1985-07-05 1988-12-13 Zenon Zakrzewski Surface wave launchers to produce plasma columns and means for producing plasma of different shapes
US4668336A (en) 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4734247A (en) * 1985-08-28 1988-03-29 Ga Technologies Inc. Helical shaping method and apparatus to produce large translational transform in pinch plasma magnetic confinement
JPS6269520A (ja) * 1985-09-21 1987-03-30 Semiconductor Energy Lab Co Ltd 光cvd法により凹部を充填する方法
USH627H (en) 1985-10-03 1989-04-04 The United States Of America As Represented By The United States Department Of Energy Spherical torus fusion reactor
NL8503008A (nl) 1985-11-04 1987-06-01 Philips Nv Gelijkstroom-wisselstroomomzetter voor het ontsteken en voeden van een ontladingslamp.
US4735765A (en) * 1985-11-26 1988-04-05 The United States Of America As Represented By The United States Department Of Energy Flexible helical-axis stellarator
DE3603947A1 (de) * 1986-02-06 1987-08-13 Stiehl Hans Henrich Dr System zur dosierung von luftgetragenen ionen mit hoher genauigkeit und verbessertem wirkungsgrad zur eliminierung elektrostatischer flaechenladungen
US4767590A (en) * 1986-04-25 1988-08-30 The United States Of America As Represented By The United States Department Of Energy Anomalous - viscosity current drive
JPH0810258B2 (ja) * 1986-06-02 1996-01-31 株式会社日立製作所 プラズマ閉じ込め方法
US4897282A (en) 1986-09-08 1990-01-30 Iowa State University Reserach Foundation, Inc. Thin film coating process using an inductively coupled plasma
US4786352A (en) 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4859908A (en) 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
ES2003363A6 (es) 1986-10-02 1988-11-01 Gh Ind Sa Perfeccionamientos en generadores de alta frecuencia para aplicaciones de calentamiento por induccion laser plasma y similares
US5773919A (en) * 1986-10-02 1998-06-30 Electron Power Systems Electron spiral toroid
JPS63210797A (ja) * 1987-02-27 1988-09-01 株式会社東芝 核融合装置
US4766287A (en) * 1987-03-06 1988-08-23 The Perkin-Elmer Corporation Inductively coupled plasma torch with adjustable sample injector
US4877757A (en) 1987-07-16 1989-10-31 Texas Instruments Incorporated Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
JPH01122363A (ja) * 1987-10-31 1989-05-15 Japan Atom Energy Res Inst 加速電源装置の保護回路
JP2805009B2 (ja) * 1988-05-11 1998-09-30 株式会社日立製作所 プラズマ発生装置及びプラズマ元素分析装置
US4853250A (en) 1988-05-11 1989-08-01 Universite De Sherbrooke Process of depositing particulate material on a substrate
JPH068510B2 (ja) * 1988-09-02 1994-02-02 日本電信電話株式会社 プラズマ/イオン生成源およびプラズマ/イオン処理装置
US4996077A (en) 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US4918031A (en) * 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
GB8905073D0 (en) 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
US4985113A (en) * 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
JPH02260399A (ja) * 1989-03-31 1990-10-23 Fuji Denpa Koki Kk 高気圧プラズマアーク発生方法
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
JP2779000B2 (ja) * 1989-08-07 1998-07-23 日本電子株式会社 誘導プラズマ発生装置
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5106827A (en) 1989-09-18 1992-04-21 The Perkin Elmer Corporation Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
RU2022917C1 (ru) 1989-09-27 1994-11-15 Уланов Игорь Максимович Способ получения окиси азота
US5223457A (en) * 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
US5030889A (en) 1989-12-21 1991-07-09 General Electric Company Lamp ballast configuration
US5000771A (en) 1989-12-29 1991-03-19 At&T Bell Laboratories Method for manufacturing an article comprising a refractory dielectric body
JP3381916B2 (ja) 1990-01-04 2003-03-04 マトソン テクノロジー,インコーポレイテッド 低周波誘導型高周波プラズマ反応装置
US5016332A (en) 1990-04-13 1991-05-21 Branson International Plasma Corporation Plasma reactor and process with wafer temperature control
US5130003A (en) 1990-06-14 1992-07-14 Conrad Richard H method of powering corona discharge in ozone generators
US5008593A (en) 1990-07-13 1991-04-16 The United States Of America As Represented By The Secretary Of The Air Force Coaxial liquid cooling of high power microwave excited plasma UV lamps
JPH0492414A (ja) * 1990-08-08 1992-03-25 Mitsubishi Electric Corp 薄膜形成装置
DE4035272A1 (de) 1990-11-02 1992-05-07 Sorbios Gmbh Vorrichtung zur erzeugung von ozon aus sauerstoff
US5365147A (en) 1990-11-28 1994-11-15 Nichimen Kabushiki Kaisha Plasma stabilizing apparatus employing feedback controls
US5200595A (en) 1991-04-12 1993-04-06 Universite De Sherbrooke High performance induction plasma torch with a water-cooled ceramic confinement tube
US5206516A (en) 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5254830A (en) 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
DE4119362A1 (de) 1991-06-12 1992-12-17 Leybold Ag Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren
US5187454A (en) 1992-01-23 1993-02-16 Applied Materials, Inc. Electronically tuned matching network using predictor-corrector control system
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
DE9109503U1 (de) 1991-07-31 1991-10-17 Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik
US5353314A (en) 1991-09-30 1994-10-04 The United States Of America As Represented By The United States Department Of Energy Electric field divertor plasma pump
JP3231367B2 (ja) * 1991-10-16 2001-11-19 益弘 小駒 グロープラズマ反応方法
JP3109871B2 (ja) 1991-10-21 2000-11-20 関東電化工業株式会社 物品の水切り・乾燥方法及び装置
US5285372A (en) 1991-10-23 1994-02-08 Henkel Corporation Power supply for an ozone generator with a bridge inverter
US5153484A (en) 1991-10-31 1992-10-06 General Electric Company Electrodeless high intensity discharge lamp excitation coil and ballast configuration for maximum efficiency
US5479072A (en) * 1991-11-12 1995-12-26 General Electric Company Low mercury arc discharge lamp containing neodymium
JPH05166595A (ja) 1991-12-12 1993-07-02 Fuji Denpa Koki Kk 高気圧高密度プラズマ発生方法
US5291415A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
US5336355A (en) 1991-12-13 1994-08-09 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
US5290382A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5180150A (en) 1992-01-24 1993-01-19 Hughes Danbury Optical Systems, Inc. Apparatus for providing consistent registration of semiconductor wafers
US5280154A (en) 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5238532A (en) 1992-02-27 1993-08-24 Hughes Aircraft Company Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching
DE69304522T2 (de) * 1992-04-16 1997-01-23 Advanced Energy Ind Inc Stabilisator fuer schalt-mode geleistet radio-frequenz plasma einrichtung
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
US5397962A (en) 1992-06-29 1995-03-14 Texas Instruments Incorporated Source and method for generating high-density plasma with inductive power coupling
US5700297A (en) 1992-08-28 1997-12-23 Ipec Precision, Inc. Apparatus for providing consistent, non-jamming registration of notched semiconductor wafers
US5352249A (en) 1992-08-28 1994-10-04 Hughes Aircraft Company Apparatus for providing consistent, non-jamming registration of semiconductor wafers
DE4231905C2 (de) * 1992-09-18 1999-05-20 Stiehl Hans Henrich Dr Vorrichtung zur Messung von Ionen in einem Gas
US5414238A (en) * 1992-10-02 1995-05-09 Martin Marietta Corporation Resonant power supply for an arcjet thruster
US5359180A (en) 1992-10-02 1994-10-25 General Electric Company Power supply system for arcjet thrusters
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
JPH0732078B2 (ja) 1993-01-14 1995-04-10 株式会社アドテック 高周波プラズマ用電源及びインピーダンス整合装置
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5372674A (en) 1993-05-14 1994-12-13 Hughes Aircraft Company Electrode for use in a plasma assisted chemical etching process
US5298103A (en) 1993-07-15 1994-03-29 Hughes Aircraft Company Electrode assembly useful in confined plasma assisted chemical etching
US5430355A (en) * 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
US5364496A (en) 1993-08-20 1994-11-15 Hughes Aircraft Company Highly durable noncontaminating surround materials for plasma etching
US5449432A (en) * 1993-10-25 1995-09-12 Applied Materials, Inc. Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
JP3228644B2 (ja) * 1993-11-05 2001-11-12 東京エレクトロン株式会社 真空処理装置用素材及びその製造方法
US5610102A (en) 1993-11-15 1997-03-11 Integrated Process Equipment Corp. Method for co-registering semiconductor wafers undergoing work in one or more blind process modules
US5419803A (en) 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
US5467013A (en) * 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
US5565036A (en) 1994-01-19 1996-10-15 Tel America, Inc. Apparatus and method for igniting plasma in a process module
JP3279038B2 (ja) 1994-01-31 2002-04-30 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
JP3365067B2 (ja) 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5406177A (en) 1994-04-18 1995-04-11 General Electric Company Gas discharge lamp ballast circuit with compact starting circuit
US5556549A (en) 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
US5514246A (en) 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
EP0697467A1 (de) * 1994-07-21 1996-02-21 Applied Materials, Inc. Verfahren und Vorrichtung zur Reinigung einer Beschichtungskammer
US5637279A (en) 1994-08-31 1997-06-10 Applied Science & Technology, Inc. Ozone and other reactive gas generator cell and system
US5563709A (en) 1994-09-13 1996-10-08 Integrated Process Equipment Corp. Apparatus for measuring, thinning and flattening silicon structures
US5515167A (en) 1994-09-13 1996-05-07 Hughes Aircraft Company Transparent optical chuck incorporating optical monitoring
US5567255A (en) 1994-10-13 1996-10-22 Integrated Process Equipment Corp. Solid annular gas discharge electrode
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
US5585766A (en) 1994-10-27 1996-12-17 Applied Materials, Inc. Electrically tuned matching networks using adjustable inductance elements
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5473291A (en) 1994-11-16 1995-12-05 Brounley Associates, Inc. Solid state plasma chamber tuner
DE69509046T2 (de) * 1994-11-30 1999-10-21 Applied Materials, Inc. Plasmareaktoren zur Behandlung von Halbleiterscheiben
JP3150058B2 (ja) * 1994-12-05 2001-03-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US5468955A (en) 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
JP3426382B2 (ja) 1995-01-24 2003-07-14 アネルバ株式会社 プラズマ処理装置
US5568015A (en) 1995-02-16 1996-10-22 Applied Science And Technology, Inc. Fluid-cooled dielectric window for a plasma system
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JPH08292278A (ja) * 1995-04-21 1996-11-05 Hitachi Ltd プラズマ対抗材料
US5688415A (en) 1995-05-30 1997-11-18 Ipec Precision, Inc. Localized plasma assisted chemical etching through a mask
JPH097795A (ja) * 1995-06-21 1997-01-10 Mitsubishi Electric Corp Ecrプロセス装置
US5834905A (en) 1995-09-15 1998-11-10 Osram Sylvania Inc. High intensity electrodeless low pressure light source driven by a transformer core arrangement
US6253704B1 (en) * 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5965034A (en) 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5767628A (en) 1995-12-20 1998-06-16 International Business Machines Corporation Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
JP3328498B2 (ja) 1996-02-16 2002-09-24 株式会社荏原製作所 高速原子線源
US5630880A (en) 1996-03-07 1997-05-20 Eastlund; Bernard J. Method and apparatus for a large volume plasma processor that can utilize any feedstock material
US5892198A (en) 1996-03-29 1999-04-06 Lam Research Corporation Method of and apparatus for electronically controlling r.f. energy supplied to a vacuum plasma processor and memory for same
USD384173S (en) 1996-07-19 1997-09-23 Osram Sylvania Inc. Electrodeless compact fluorescent lamp
US5814154A (en) 1997-01-23 1998-09-29 Gasonics International Short-coupled-path extender for plasma source
US5914278A (en) 1997-01-23 1999-06-22 Gasonics International Backside etch process chamber and method
US6424232B1 (en) * 1999-11-30 2002-07-23 Advanced Energy's Voorhees Operations Method and apparatus for matching a variable load impedance with an RF power generator impedance

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US20020125226A1 (en) 2002-09-12
US6150628A (en) 2000-11-21
JP4070152B2 (ja) 2008-04-02
EP1310980A1 (de) 2003-05-14
EP2256781A1 (de) 2010-12-01
JP2007165304A (ja) 2007-06-28
DE69841962D1 (de) 2010-12-02
EP0992059A1 (de) 2000-04-12
JP4431183B2 (ja) 2010-03-10
US6664497B2 (en) 2003-12-16
EP2256781B1 (de) 2012-12-26
US6486431B1 (en) 2002-11-26
DE69842259D1 (de) 2011-06-16
DE69841965D1 (de) 2010-12-02
EP1313128B1 (de) 2011-05-04
JP2009176750A (ja) 2009-08-06
DE69842098D1 (de) 2011-02-24
US20020125225A1 (en) 2002-09-12
EP1313130A1 (de) 2003-05-21
EP1313128A1 (de) 2003-05-21
EP1310981B1 (de) 2010-10-20
EP1313130B1 (de) 2011-01-12
DE69811497D1 (de) 2003-03-27
EP1313131A1 (de) 2003-05-21
EP1313129B1 (de) 2010-10-20
JP4608583B2 (ja) 2011-01-12
JP2007165325A (ja) 2007-06-28
DE69841961D1 (de) 2010-12-02
JP2008218431A (ja) 2008-09-18
US20040079287A1 (en) 2004-04-29
JP2002507315A (ja) 2002-03-05
US6559408B2 (en) 2003-05-06
EP1313131B1 (de) 2010-10-20
EP0992059B1 (de) 2003-02-19
DE69841963D1 (de) 2010-12-02
WO1999000823A1 (en) 1999-01-07
EP1310981A1 (de) 2003-05-14
EP1310980B1 (de) 2010-10-20
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US7161112B2 (en) 2007-01-09

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