JP6746865B2 - プラズマ生成装置 - Google Patents
プラズマ生成装置 Download PDFInfo
- Publication number
- JP6746865B2 JP6746865B2 JP2016185115A JP2016185115A JP6746865B2 JP 6746865 B2 JP6746865 B2 JP 6746865B2 JP 2016185115 A JP2016185115 A JP 2016185115A JP 2016185115 A JP2016185115 A JP 2016185115A JP 6746865 B2 JP6746865 B2 JP 6746865B2
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- 230000005291 magnetic effect Effects 0.000 claims description 87
- 239000003990 capacitor Substances 0.000 claims description 62
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- 229910052751 metal Inorganic materials 0.000 claims description 5
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- 125000006850 spacer group Chemical group 0.000 description 13
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- 238000005859 coupling reaction Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 7
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
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- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
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- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
C=1/(ω2L)
この構成によると、磁界生成部と並列コンデンサとで並列共振回路を構成することができ、高周波電源から見た負荷のインピーダンスを最大にすることができる。
C1=1/(ω2L) ・・・・ (1)
Z=1/{(1/jωL)+jωC1}
=jωL/(1−ω2LC1) ・・・・ (2)
C1=1/(ω2L)−Cgap ・・・・ (3)
V1=j(XL−XC2)×I=j(1/2)XL×I ・・・・ (4)
V2=−jXC2×I=−j(1/2)XL×I ・・・・ (5)
1,1’ チャンバ(磁界生成部)
11 本体(磁界生成部)
11a 絶縁ギャップ(絶縁部)
11a’ 絶縁ギャップ(第2の絶縁部)
11b 外壁
11c 内壁
11d フランジ
11e 中心孔
12 インレットポート
13 アウトレットポート
14 絶縁スペーサ
15 中継アダプタ
16 Oリング(弾性リング)
17 Oリング加圧リング
2 磁気コア
3,3’ 高周波電源
4,5 接続線
6 並列コンデンサ
6’ 直列コンデンサ
7 誘導コイル(磁界生成部)
P トロイダルプラズマ
Claims (7)
- トロイダル形状の放電空間を有するチャンバと、
高周波電流を出力する高周波電源と、
前記高周波電流が流れることで高周波磁界を生成する磁界生成部と、
前記磁界生成部に並列接続された並列コンデンサと、
を備え、
前記チャンバは、導体製であって、トロイダル方向の一部を絶縁するための絶縁部を備えている、
ことを特徴とするプラズマ生成装置。 - 前記チャンバは金属製である、
請求項1に記載のプラズマ生成装置。 - 前記絶縁部は、前記チャンバをトロイダル方向の一部で切り離した隙間を維持したものである、
請求項1または2に記載のプラズマ生成装置。 - 前記チャンバは、前記絶縁部を挟んだ両側の外壁にそれぞれ配置されたフランジをさらに備えており、
筒状であって、前記チャンバの切り離された部分が両側から挿入された状態で、2つの前記フランジの間に配置されて、前記隙間の大きさを規定する中継アダプタをさらに備えている、
請求項3に記載のプラズマ生成装置。 - 前記中継アダプタの内面と前記チャンバの外壁との間に配置され、両者に密着するように変形することで前記チャンバを密封状態に保つ弾性リングをさらに備えている、
請求項4に記載のプラズマ生成装置。 - 前記チャンバは、
トロイダル方向の一部を絶縁するための第2の絶縁部と、
前記第2の絶縁部を挟んだ、前記チャンバの両側の間に直列接続される直列コンデンサと、
をさらに備えている、
請求項1ないし5のいずれかに記載のプラズマ生成装置。 - 前記直列コンデンサのリアクタンスは、プラズマが発生した後の状態における前記磁界生成部のリアクタンスの約2分の1である、
請求項6に記載のプラズマ生成装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016185115A JP6746865B2 (ja) | 2016-09-23 | 2016-09-23 | プラズマ生成装置 |
US15/710,086 US10306744B2 (en) | 2016-09-23 | 2017-09-20 | Plasma generation apparatus and high-frequency power source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016185115A JP6746865B2 (ja) | 2016-09-23 | 2016-09-23 | プラズマ生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018049768A JP2018049768A (ja) | 2018-03-29 |
JP6746865B2 true JP6746865B2 (ja) | 2020-08-26 |
Family
ID=61687041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016185115A Active JP6746865B2 (ja) | 2016-09-23 | 2016-09-23 | プラズマ生成装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10306744B2 (ja) |
JP (1) | JP6746865B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201813451D0 (en) * | 2018-08-17 | 2018-10-03 | Spts Technologies Ltd | Plasma apparatus |
WO2023043748A1 (en) * | 2021-09-17 | 2023-03-23 | Lam Research Corporation | Junction system for direct-drive radiofrequency power supply |
JP2024534990A (ja) * | 2021-09-17 | 2024-09-26 | ラム リサーチ コーポレーション | ダイレクトドライブ無線周波電源に対するコイルの対称的結合 |
US20230402255A1 (en) * | 2022-06-09 | 2023-12-14 | Tokyo Electron Limited | Equipment and Method for Improved Edge Uniformity of Plasma Processing of Wafers |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH056798A (ja) * | 1991-06-27 | 1993-01-14 | Yokogawa Electric Corp | Icp用rf電源装置 |
US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
DE19900179C1 (de) * | 1999-01-07 | 2000-02-24 | Bosch Gmbh Robert | Plasmaätzanlage |
US6855906B2 (en) * | 2001-10-16 | 2005-02-15 | Adam Alexander Brailove | Induction plasma reactor |
US20030015965A1 (en) * | 2002-08-15 | 2003-01-23 | Valery Godyak | Inductively coupled plasma reactor |
US9035553B2 (en) * | 2011-11-09 | 2015-05-19 | Dae-Kyu Choi | Hybrid plasma reactor |
KR101364578B1 (ko) * | 2012-01-10 | 2014-02-18 | 최대규 | 하이브리드 플라즈마 반응기 |
US8853948B2 (en) * | 2012-04-18 | 2014-10-07 | Dai-Kyu CHOI | Multi discharging tube plasma reactor |
KR101328520B1 (ko) * | 2012-05-17 | 2013-11-20 | 한양대학교 산학협력단 | 플라즈마 장비 |
JP6063741B2 (ja) * | 2012-12-28 | 2017-01-18 | 東京エレクトロン株式会社 | プラズマ処理容器及びプラズマ処理装置 |
WO2014104753A1 (ko) * | 2012-12-28 | 2014-07-03 | 주식회사 뉴파워 프라즈마 | 플라즈마 반응기 및 이를 이용한 플라즈마 점화 방법 |
KR20140137172A (ko) * | 2013-05-22 | 2014-12-02 | 최대규 | 자기 관리 기능을 갖는 원격 플라즈마 시스템 및 이의 자기 관리 방법 |
JP6548991B2 (ja) * | 2015-08-28 | 2019-07-24 | 株式会社ダイヘン | プラズマ生成装置 |
-
2016
- 2016-09-23 JP JP2016185115A patent/JP6746865B2/ja active Active
-
2017
- 2017-09-20 US US15/710,086 patent/US10306744B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018049768A (ja) | 2018-03-29 |
US10306744B2 (en) | 2019-05-28 |
US20180092196A1 (en) | 2018-03-29 |
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