DE69839066D1 - Vorrichtung zur Substratbeschichtung - Google Patents

Vorrichtung zur Substratbeschichtung

Info

Publication number
DE69839066D1
DE69839066D1 DE69839066T DE69839066T DE69839066D1 DE 69839066 D1 DE69839066 D1 DE 69839066D1 DE 69839066 T DE69839066 T DE 69839066T DE 69839066 T DE69839066 T DE 69839066T DE 69839066 D1 DE69839066 D1 DE 69839066D1
Authority
DE
Germany
Prior art keywords
substrate coating
coating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69839066T
Other languages
English (en)
Other versions
DE69839066T2 (de
Inventor
Akihisa Hongo
Naoaki Ogure
Hiroaki Inoue
Norio Kimura
Fumio Kuriyama
Manabu Tsujimura
Kenichi Suzuki
Atsushi Chono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP09697498A external-priority patent/JP3830272B2/ja
Priority claimed from JP20513898A external-priority patent/JPH11154653A/ja
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of DE69839066D1 publication Critical patent/DE69839066D1/de
Application granted granted Critical
Publication of DE69839066T2 publication Critical patent/DE69839066T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE69839066T 1997-09-17 1998-09-17 Vorrichtung zur Substratbeschichtung Expired - Fee Related DE69839066T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP27049397 1997-09-17
JP27049397 1997-09-17
JP7137098 1998-03-05
JP7137098 1998-03-05
JP09697498A JP3830272B2 (ja) 1998-03-05 1998-03-26 基板のめっき装置
JP9697498 1998-03-26
JP20513898A JPH11154653A (ja) 1997-09-17 1998-07-21 基板メッキ装置
JP20513898 1998-07-21

Publications (2)

Publication Number Publication Date
DE69839066D1 true DE69839066D1 (de) 2008-03-20
DE69839066T2 DE69839066T2 (de) 2009-01-22

Family

ID=27465359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69839066T Expired - Fee Related DE69839066T2 (de) 1997-09-17 1998-09-17 Vorrichtung zur Substratbeschichtung

Country Status (5)

Country Link
US (3) US6294059B1 (de)
EP (1) EP0903774B1 (de)
KR (1) KR100554855B1 (de)
DE (1) DE69839066T2 (de)
TW (1) TW405158B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999053119A1 (en) * 1998-04-13 1999-10-21 Acm Research, Inc Method and apparatus for enhancing adhesion between barrier layer and metal layer formed by plating
KR100654413B1 (ko) * 1998-04-30 2006-12-05 가부시키가이샤 에바라 세이사꾸쇼 기판의 도금방법
KR100694562B1 (ko) * 1998-08-11 2007-03-13 가부시키가이샤 에바라 세이사꾸쇼 기판 도금방법 및 장치
US7204917B2 (en) 1998-12-01 2007-04-17 Novellus Systems, Inc. Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same
US6328872B1 (en) * 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US6409904B1 (en) 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
KR100665745B1 (ko) * 1999-01-26 2007-01-09 가부시키가이샤 에바라 세이사꾸쇼 구리도금방법 및 그 장치
US7192494B2 (en) * 1999-03-05 2007-03-20 Applied Materials, Inc. Method and apparatus for annealing copper films
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6585876B2 (en) 1999-04-08 2003-07-01 Applied Materials Inc. Flow diffuser to be used in electro-chemical plating system and method
US7022211B2 (en) 2000-01-31 2006-04-04 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
JP2000331975A (ja) * 1999-05-19 2000-11-30 Ebara Corp ウエハ洗浄装置
KR20020019056A (ko) * 1999-06-01 2002-03-09 히가시 데쓰로 반도체 장치의 제조 방법 및 제조 장치
EP1067221A3 (de) * 1999-07-08 2004-09-08 Ebara Corporation Verfahren und Gerät für die Plattierung eines Substrats und Plattierungsanlage
US6423200B1 (en) 1999-09-30 2002-07-23 Lam Research Corporation Copper interconnect seed layer treatment methods and apparatuses for treating the same
KR100741040B1 (ko) * 1999-10-15 2007-07-20 가부시키가이샤 에바라 세이사꾸쇼 배선형성방법 및 장치
US6660139B1 (en) * 1999-11-08 2003-12-09 Ebara Corporation Plating apparatus and method
JP3367655B2 (ja) * 1999-12-24 2003-01-14 島田理化工業株式会社 めっき処理装置及びめっき処理方法
WO2001048800A1 (fr) * 1999-12-24 2001-07-05 Ebara Corporation Procede et appareil de traitement de tranche de semi-conducteur
US6457199B1 (en) * 2000-10-12 2002-10-01 Lam Research Corporation Substrate processing in an immersion, scrub and dry system
JP4067307B2 (ja) * 2000-04-27 2008-03-26 株式会社荏原製作所 回転保持装置
US6634370B2 (en) * 2000-05-08 2003-10-21 Tokyo Electron Limited Liquid treatment system and liquid treatment method
TWI228548B (en) * 2000-05-26 2005-03-01 Ebara Corp Apparatus for processing substrate and apparatus for processing treatment surface of substrate
US6645550B1 (en) * 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
US6811658B2 (en) * 2000-06-29 2004-11-02 Ebara Corporation Apparatus for forming interconnects
US6413390B1 (en) * 2000-10-02 2002-07-02 Advanced Micro Devices, Inc. Plating system with remote secondary anode for semiconductor manufacturing
JP4644926B2 (ja) * 2000-10-13 2011-03-09 ソニー株式会社 半導体製造装置および半導体装置の製造方法
US6617867B2 (en) * 2000-11-29 2003-09-09 Teradyne, Inc. Mechanism for clamping device interface board to peripheral
CN1260778C (zh) * 2000-12-04 2006-06-21 株式会社荏原制作所 基片加工方法
US20020139684A1 (en) * 2001-04-02 2002-10-03 Mitsubishi Denki Kabushiki Kaisha Plating system, plating method, method of manufacturing semiconductor device using the same, and method of manufacturing printed board using the same
US6572755B2 (en) 2001-04-11 2003-06-03 Speedfam-Ipec Corporation Method and apparatus for electrochemically depositing a material onto a workpiece surface
WO2002083995A1 (en) * 2001-04-12 2002-10-24 Arthur, Keigler Method of and apparatus for controlling fluid flow
KR100488376B1 (ko) * 2001-04-27 2005-05-11 가부시키가이샤 고베 세이코쇼 기판 처리 방법 및 기판 처리 설비
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
TW554069B (en) * 2001-08-10 2003-09-21 Ebara Corp Plating device and method
KR20040018558A (ko) * 2001-08-13 2004-03-03 가부시키 가이샤 에바라 세이사꾸쇼 반도체장치와 그 제조방법 및 도금액
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
JP4196283B2 (ja) * 2002-04-10 2008-12-17 ソニー株式会社 データ記録装置および方法、プログラム格納媒体、並びにプログラム
US7252714B2 (en) * 2002-07-16 2007-08-07 Semitool, Inc. Apparatus and method for thermally controlled processing of microelectronic workpieces
JP3827627B2 (ja) * 2002-08-13 2006-09-27 株式会社荏原製作所 めっき装置及びめっき方法
US7087117B2 (en) * 2002-11-15 2006-08-08 Ebara Corporation Substrate processing apparatus and substrate processing method
US6939403B2 (en) * 2002-11-19 2005-09-06 Blue29, Llc Spatially-arranged chemical processing station
US7311810B2 (en) * 2003-04-18 2007-12-25 Applied Materials, Inc. Two position anneal chamber
JP2004339579A (ja) * 2003-05-16 2004-12-02 Ebara Corp 電解処理装置及び方法
US20060141157A1 (en) * 2003-05-27 2006-06-29 Masahiko Sekimoto Plating apparatus and plating method
US7413983B2 (en) * 2003-06-13 2008-08-19 Ebara Corporation Plating method including pretreatment of a surface of a base metal
JP2005044910A (ja) * 2003-07-24 2005-02-17 Ebara Corp 配線形成方法及び配線形成装置
JP2005082843A (ja) * 2003-09-05 2005-03-31 Ebara Corp 電解液管理方法及び管理装置
US20050208201A1 (en) * 2003-11-07 2005-09-22 Makoto Kubota Method and apparatus for determining the concentrations of additives in a plating solution
US20050236268A1 (en) * 2004-04-21 2005-10-27 Koji Mishima Substrate processing apparatus
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
WO2007087831A1 (en) * 2006-02-03 2007-08-09 Freescale Semiconductor, Inc. 'universal' barrier cmp slurry for use with low dielectric constant interlayer dielectrics
US20090301867A1 (en) * 2006-02-24 2009-12-10 Citibank N.A. Integrated system for semiconductor substrate processing using liquid phase metal deposition
WO2007095972A1 (en) 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Semiconductordevice including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprissing multiple organic components for use in a semiconductor device
US7694688B2 (en) * 2007-01-05 2010-04-13 Applied Materials, Inc. Wet clean system design
US20100200995A1 (en) * 2007-07-09 2010-08-12 Freeescale Semiconductor, Inc Coupling layer composition for a semiconductor device, semiconductor device, method of forming the coupling layer, and apparatus for the manufacture of a semiconductor device
CN102371525B (zh) * 2010-08-19 2014-09-24 中芯国际集成电路制造(上海)有限公司 抛光装置
KR102003677B1 (ko) * 2011-02-10 2019-07-26 주식회사 케이씨텍 반도체 기판 세정 장치
EP2502877B1 (de) * 2011-03-23 2013-10-02 Patek Philippe SA Genève Verfahren zur Herstellung eines Verbundwerkstoffteils, insbesondere für Uhrwerk
US9388504B2 (en) 2013-03-26 2016-07-12 Ebara Corporation Plating apparatus and plating method
JP6239417B2 (ja) 2014-03-24 2017-11-29 株式会社荏原製作所 基板処理装置
CN105097651B (zh) * 2014-05-07 2019-12-24 盛美半导体设备(上海)有限公司 镀铜减薄一体化装置
US20170370017A1 (en) * 2016-06-27 2017-12-28 Tel Nexx, Inc. Wet processing system and method of operating
WO2022086186A1 (ko) * 2020-10-20 2022-04-28 삼성전자 주식회사 도전성 부재가 도금된 외부 하우징을 포함하는 전자 장치 및 그의 제조 방법
CN115404467B (zh) * 2022-09-02 2024-01-09 江苏芯梦半导体设备有限公司 全自动化学镀系统及化学镀方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649509A (en) * 1969-07-08 1972-03-14 Buckbee Mears Co Electrodeposition systems
US4324629A (en) * 1979-06-19 1982-04-13 Hitachi, Ltd. Process for regenerating chemical copper plating solution
JPS6014244A (ja) * 1983-07-06 1985-01-24 Fujitsu Ltd マスク洗浄装置
US4609565A (en) * 1984-10-10 1986-09-02 Mobil Solar Energy Corporation Method of fabricating solar cells
US4924890A (en) * 1986-05-16 1990-05-15 Eastman Kodak Company Method and apparatus for cleaning semiconductor wafers
US4774101A (en) * 1986-12-10 1988-09-27 American Telephone And Telegraph Company, At&T Technologies, Inc. Automated method for the analysis and control of the electroless metal plating solution
US4789438A (en) 1987-06-23 1988-12-06 Olin Corporation Cathode surface treatment for electroforming metallic foil or strip
US5092975A (en) * 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
JPH0344058A (ja) * 1989-07-11 1991-02-25 Hitachi Ltd 半導体装置の製造方法および製造装置
JPH0414222A (ja) * 1990-05-07 1992-01-20 Hitachi Ltd 半導体装置の製造方法及び製造装置
US5338362A (en) * 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
US5368715A (en) 1993-02-23 1994-11-29 Enthone-Omi, Inc. Method and system for controlling plating bath parameters
JP3213113B2 (ja) 1993-03-15 2001-10-02 株式会社荏原製作所 はんだめっき液自動管理装置
JP3437600B2 (ja) 1993-03-15 2003-08-18 株式会社荏原製作所 はんだめっき液自動分析方法及び装置
JP3315544B2 (ja) 1994-11-29 2002-08-19 株式会社荏原製作所 半導体ウエハ研磨装置および方法
JPH08187660A (ja) 1994-12-28 1996-07-23 Ebara Corp ポリッシング装置
JP3583491B2 (ja) 1994-12-28 2004-11-04 株式会社荏原製作所 ポリッシング装置および方法
US5679059A (en) 1994-11-29 1997-10-21 Ebara Corporation Polishing aparatus and method
US5827110A (en) 1994-12-28 1998-10-27 Kabushiki Kaisha Toshiba Polishing facility
JP3583490B2 (ja) 1994-12-28 2004-11-04 株式会社荏原製作所 ポリッシング装置
US5885138A (en) 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
JP3420849B2 (ja) 1993-09-21 2003-06-30 株式会社東芝 ポリッシング装置及び方法
KR100390293B1 (ko) 1993-09-21 2003-09-02 가부시끼가이샤 도시바 폴리싱장치
US5415890A (en) * 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
JP3803130B2 (ja) 1994-12-06 2006-08-02 株式会社荏原製作所 ポリッシング装置及びポリッシング方法
JP3044277B2 (ja) * 1994-12-21 2000-05-22 信越半導体株式会社 ウェーハの洗浄及び洗浄乾燥装置
JP3579802B2 (ja) * 1994-12-27 2004-10-20 秋田製錬株式会社 陰極板の自動搬送処理装置
JPH08222616A (ja) * 1995-02-13 1996-08-30 Dainippon Screen Mfg Co Ltd 基板処理装置
US5830272A (en) * 1995-11-07 1998-11-03 Sputtered Films, Inc. System for and method of providing a controlled deposition on wafers
US5891513A (en) * 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5723387A (en) 1996-07-22 1998-03-03 Industrial Technology Research Institute Method and apparatus for forming very small scale Cu interconnect metallurgy on semiconductor substrates
TW419785B (en) 1996-11-28 2001-01-21 Ind Tech Res Inst Method and apparatus for forming very small scale metal interconnect on semiconductor substrates
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US6110011A (en) 1997-11-10 2000-08-29 Applied Materials, Inc. Integrated electrodeposition and chemical-mechanical polishing tool
US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6254760B1 (en) 1999-03-05 2001-07-03 Applied Materials, Inc. Electro-chemical deposition system and method

Also Published As

Publication number Publication date
EP0903774A3 (de) 2004-01-21
US6929722B2 (en) 2005-08-16
TW405158B (en) 2000-09-11
EP0903774B1 (de) 2008-01-30
US20040163947A1 (en) 2004-08-26
KR19990029870A (ko) 1999-04-26
KR100554855B1 (ko) 2006-06-14
DE69839066T2 (de) 2009-01-22
US6294059B1 (en) 2001-09-25
US20020005359A1 (en) 2002-01-17
EP0903774A2 (de) 1999-03-24

Similar Documents

Publication Publication Date Title
DE69839066D1 (de) Vorrichtung zur Substratbeschichtung
DE69917372D1 (de) Vorrichtung zur Quantifizierung von Substraten
DE69714886D1 (de) Vorrichtung zur elektrostatischen Beschichtung
DE69812869D1 (de) Verfahren zur Substratbearbeitung
DE69636183D1 (de) Vorrichtung zur Prüfung von Halbleitersubstraten
DE69835300D1 (de) Vorrichtung zur inhalation
DE69832153D1 (de) Vorrichtung zur geldüberweisung
DE69940014D1 (de) Vorrichtung zur verhinderung von autodiebstahl
DE59801545D1 (de) Beschichtungsverfahren und vorrichtung
DE69925493D1 (de) Vorrichtung zur vorbeugung von vorhofstachyarrhythmien
DE69902467D1 (de) Vorrichtung zum zerstäuben von proben
DE69832506D1 (de) Vorrichtung zur islolierung von mikroschwingungen
DE69529497D1 (de) Vorrichtung zur elektrostatischen Pulverbeschichtung
DE59712307D1 (de) Vorrichtung zur kathodenzerstäubung
DE69835000D1 (de) Vorrichtung zur Gasbehandlung
DE59901173D1 (de) Vorrichtung zur Beschichtung von Substraten in einer Vakuumkammer
DE69904802D1 (de) Vorrichtung zur muenzenrueckgabe fuer muenzautomaten
DE69807283D1 (de) Beschichtungsverfahren
DE69802993D1 (de) Einrichtung zum Beschichten
DE69723878D1 (de) Vorrichtung zur positionsbestmmung
DE69838247D1 (de) Beschichtungsvorrichtung
DE69825861D1 (de) Vorrichtung zur lokalisierung von strahlungsquellen
DE69802008D1 (de) Vorrichtung zur kristallziehung
DE69925827D1 (de) Vorrichtung zur verfolgung von nicht-geostationären satelliten
DE59607534D1 (de) Einrichtung zur reaktiven beschichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee