EP0903774A3 - Vorrichtung zur Substratbeschichtung - Google Patents

Vorrichtung zur Substratbeschichtung Download PDF

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Publication number
EP0903774A3
EP0903774A3 EP98117633A EP98117633A EP0903774A3 EP 0903774 A3 EP0903774 A3 EP 0903774A3 EP 98117633 A EP98117633 A EP 98117633A EP 98117633 A EP98117633 A EP 98117633A EP 0903774 A3 EP0903774 A3 EP 0903774A3
Authority
EP
European Patent Office
Prior art keywords
substrate
unit
plating
plated layer
drying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98117633A
Other languages
English (en)
French (fr)
Other versions
EP0903774A2 (de
EP0903774B1 (de
Inventor
Akihisa Hongo
Naoaki Ogure
Hiroaki Inoue
Norio Kimura
Fumio Kuriyama
Manabu Tsujimura
Kenichi Suzuki
Atsushi Chono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP09697498A external-priority patent/JP3830272B2/ja
Priority claimed from JP20513898A external-priority patent/JPH11154653A/ja
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of EP0903774A2 publication Critical patent/EP0903774A2/de
Publication of EP0903774A3 publication Critical patent/EP0903774A3/de
Application granted granted Critical
Publication of EP0903774B1 publication Critical patent/EP0903774B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP98117633A 1997-09-17 1998-09-17 Vorrichtung zur Substratbeschichtung Expired - Lifetime EP0903774B1 (de)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP27049397 1997-09-17
JP270493/97 1997-09-17
JP27049397 1997-09-17
JP71370/98 1998-03-05
JP7137098 1998-03-05
JP7137098 1998-03-05
JP96974/98 1998-03-26
JP09697498A JP3830272B2 (ja) 1998-03-05 1998-03-26 基板のめっき装置
JP9697498 1998-03-26
JP20513898A JPH11154653A (ja) 1997-09-17 1998-07-21 基板メッキ装置
JP205138/98 1998-07-21
JP20513898 1998-07-21

Publications (3)

Publication Number Publication Date
EP0903774A2 EP0903774A2 (de) 1999-03-24
EP0903774A3 true EP0903774A3 (de) 2004-01-21
EP0903774B1 EP0903774B1 (de) 2008-01-30

Family

ID=27465359

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98117633A Expired - Lifetime EP0903774B1 (de) 1997-09-17 1998-09-17 Vorrichtung zur Substratbeschichtung

Country Status (5)

Country Link
US (3) US6294059B1 (de)
EP (1) EP0903774B1 (de)
KR (1) KR100554855B1 (de)
DE (1) DE69839066T2 (de)
TW (1) TW405158B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999053119A1 (en) * 1998-04-13 1999-10-21 Acm Research, Inc Method and apparatus for enhancing adhesion between barrier layer and metal layer formed by plating
EP1091024A4 (de) * 1998-04-30 2006-03-22 Ebara Corp Verfahren und vorrichtung zum beschichten von substraten
EP1126512A4 (de) * 1998-08-11 2007-10-17 Ebara Corp Abscheidungsmethode und -apparat für halbleiterscheiben
US6328872B1 (en) 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US7204917B2 (en) 1998-12-01 2007-04-17 Novellus Systems, Inc. Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same
US6409904B1 (en) 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
KR100665745B1 (ko) * 1999-01-26 2007-01-09 가부시키가이샤 에바라 세이사꾸쇼 구리도금방법 및 그 장치
US7192494B2 (en) * 1999-03-05 2007-03-20 Applied Materials, Inc. Method and apparatus for annealing copper films
US6585876B2 (en) 1999-04-08 2003-07-01 Applied Materials Inc. Flow diffuser to be used in electro-chemical plating system and method
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US7022211B2 (en) * 2000-01-31 2006-04-04 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
JP2000331975A (ja) * 1999-05-19 2000-11-30 Ebara Corp ウエハ洗浄装置
WO2000074128A1 (fr) * 1999-06-01 2000-12-07 Tokyo Electron Limited Procede de fabrication de dispositif a semiconducteur et appareil de fabrication associe
KR100637890B1 (ko) * 1999-07-08 2006-10-23 가부시키가이샤 에바라 세이사꾸쇼 도금장치 및 도금방법 및 도금처리설비
US6423200B1 (en) * 1999-09-30 2002-07-23 Lam Research Corporation Copper interconnect seed layer treatment methods and apparatuses for treating the same
KR100741040B1 (ko) * 1999-10-15 2007-07-20 가부시키가이샤 에바라 세이사꾸쇼 배선형성방법 및 장치
US6660139B1 (en) * 1999-11-08 2003-12-09 Ebara Corporation Plating apparatus and method
JP3367655B2 (ja) * 1999-12-24 2003-01-14 島田理化工業株式会社 めっき処理装置及びめっき処理方法
WO2001048800A1 (fr) * 1999-12-24 2001-07-05 Ebara Corporation Procede et appareil de traitement de tranche de semi-conducteur
US6457199B1 (en) * 2000-10-12 2002-10-01 Lam Research Corporation Substrate processing in an immersion, scrub and dry system
JP4067307B2 (ja) * 2000-04-27 2008-03-26 株式会社荏原製作所 回転保持装置
US6634370B2 (en) * 2000-05-08 2003-10-21 Tokyo Electron Limited Liquid treatment system and liquid treatment method
TWI228548B (en) * 2000-05-26 2005-03-01 Ebara Corp Apparatus for processing substrate and apparatus for processing treatment surface of substrate
US6645550B1 (en) * 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
TW571005B (en) * 2000-06-29 2004-01-11 Ebara Corp Method and apparatus for forming copper interconnects, and polishing liquid and polishing method
US6413390B1 (en) * 2000-10-02 2002-07-02 Advanced Micro Devices, Inc. Plating system with remote secondary anode for semiconductor manufacturing
JP4644926B2 (ja) * 2000-10-13 2011-03-09 ソニー株式会社 半導体製造装置および半導体装置の製造方法
US6617867B2 (en) * 2000-11-29 2003-09-09 Teradyne, Inc. Mechanism for clamping device interface board to peripheral
CN1260778C (zh) * 2000-12-04 2006-06-21 株式会社荏原制作所 基片加工方法
US20020139684A1 (en) * 2001-04-02 2002-10-03 Mitsubishi Denki Kabushiki Kaisha Plating system, plating method, method of manufacturing semiconductor device using the same, and method of manufacturing printed board using the same
US6572755B2 (en) 2001-04-11 2003-06-03 Speedfam-Ipec Corporation Method and apparatus for electrochemically depositing a material onto a workpiece surface
WO2002083995A1 (en) * 2001-04-12 2002-10-24 Arthur, Keigler Method of and apparatus for controlling fluid flow
KR100488376B1 (ko) * 2001-04-27 2005-05-11 가부시키가이샤 고베 세이코쇼 기판 처리 방법 및 기판 처리 설비
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
TW554069B (en) * 2001-08-10 2003-09-21 Ebara Corp Plating device and method
KR20040018558A (ko) * 2001-08-13 2004-03-03 가부시키 가이샤 에바라 세이사꾸쇼 반도체장치와 그 제조방법 및 도금액
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
EP1494472B1 (de) * 2002-04-10 2014-08-06 Sony Corporation Datenaufzeichnungseinrichtung und verfahren, programmspeichermedium und programm
US7252714B2 (en) * 2002-07-16 2007-08-07 Semitool, Inc. Apparatus and method for thermally controlled processing of microelectronic workpieces
JP3827627B2 (ja) * 2002-08-13 2006-09-27 株式会社荏原製作所 めっき装置及びめっき方法
TWI591705B (zh) * 2002-11-15 2017-07-11 荏原製作所股份有限公司 基板處理裝置
US6939403B2 (en) 2002-11-19 2005-09-06 Blue29, Llc Spatially-arranged chemical processing station
US7311810B2 (en) * 2003-04-18 2007-12-25 Applied Materials, Inc. Two position anneal chamber
JP2004339579A (ja) * 2003-05-16 2004-12-02 Ebara Corp 電解処理装置及び方法
US20060141157A1 (en) * 2003-05-27 2006-06-29 Masahiko Sekimoto Plating apparatus and plating method
US7413983B2 (en) * 2003-06-13 2008-08-19 Ebara Corporation Plating method including pretreatment of a surface of a base metal
JP2005044910A (ja) * 2003-07-24 2005-02-17 Ebara Corp 配線形成方法及び配線形成装置
JP2005082843A (ja) * 2003-09-05 2005-03-31 Ebara Corp 電解液管理方法及び管理装置
US20050208201A1 (en) * 2003-11-07 2005-09-22 Makoto Kubota Method and apparatus for determining the concentrations of additives in a plating solution
US20050236268A1 (en) * 2004-04-21 2005-10-27 Koji Mishima Substrate processing apparatus
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
US20090045164A1 (en) * 2006-02-03 2009-02-19 Freescale Semiconductor, Inc. "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
WO2007095973A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Integrated system for semiconductor substrate processing using liquid phase metal deposition
US7694688B2 (en) * 2007-01-05 2010-04-13 Applied Materials, Inc. Wet clean system design
US20100200995A1 (en) * 2007-07-09 2010-08-12 Freeescale Semiconductor, Inc Coupling layer composition for a semiconductor device, semiconductor device, method of forming the coupling layer, and apparatus for the manufacture of a semiconductor device
CN102371525B (zh) * 2010-08-19 2014-09-24 中芯国际集成电路制造(上海)有限公司 抛光装置
KR102003677B1 (ko) 2011-02-10 2019-07-26 주식회사 케이씨텍 반도체 기판 세정 장치
EP2502877B1 (de) * 2011-03-23 2013-10-02 Patek Philippe SA Genève Verfahren zur Herstellung eines Verbundwerkstoffteils, insbesondere für Uhrwerk
US9388504B2 (en) 2013-03-26 2016-07-12 Ebara Corporation Plating apparatus and plating method
JP6239417B2 (ja) 2014-03-24 2017-11-29 株式会社荏原製作所 基板処理装置
CN105097651B (zh) * 2014-05-07 2019-12-24 盛美半导体设备（上海）有限公司 镀铜减薄一体化装置
US20170370017A1 (en) * 2016-06-27 2017-12-28 Tel Nexx, Inc. Wet processing system and method of operating
CN116368262A (zh) * 2020-10-20 2023-06-30 三星电子株式会社 包括镀覆有导电构件的外壳体的电子装置及其制造方法
CN115404467B (zh) * 2022-09-02 2024-01-09 江苏芯梦半导体设备有限公司 全自动化学镀系统及化学镀方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5092975A (en) * 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5415890A (en) * 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
EP0773308A1 (de) * 1995-11-07 1997-05-14 Sputtered Films, Inc. Vorrichtung und Methode zur kontrollierten Beschichtung von Wafern
JPH10163208A (ja) * 1996-11-28 1998-06-19 Ind Technol Res Inst 半導体基板上に極小スケールのＣｕ相互接続金属を形成する方法及び装置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649509A (en) * 1969-07-08 1972-03-14 Buckbee Mears Co Electrodeposition systems
US4324629A (en) * 1979-06-19 1982-04-13 Hitachi, Ltd. Process for regenerating chemical copper plating solution
JPS6014244A (ja) * 1983-07-06 1985-01-24 Fujitsu Ltd マスク洗浄装置
US4609565A (en) * 1984-10-10 1986-09-02 Mobil Solar Energy Corporation Method of fabricating solar cells
US4924890A (en) * 1986-05-16 1990-05-15 Eastman Kodak Company Method and apparatus for cleaning semiconductor wafers
US4774101A (en) * 1986-12-10 1988-09-27 American Telephone And Telegraph Company, At&T Technologies, Inc. Automated method for the analysis and control of the electroless metal plating solution
US4789438A (en) 1987-06-23 1988-12-06 Olin Corporation Cathode surface treatment for electroforming metallic foil or strip
JPH0344058A (ja) * 1989-07-11 1991-02-25 Hitachi Ltd 半導体装置の製造方法および製造装置
JPH0414222A (ja) * 1990-05-07 1992-01-20 Hitachi Ltd 半導体装置の製造方法及び製造装置
US5338362A (en) * 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
US5368715A (en) * 1993-02-23 1994-11-29 Enthone-Omi, Inc. Method and system for controlling plating bath parameters
JP3213113B2 (ja) 1993-03-15 2001-10-02 株式会社荏原製作所 はんだめっき液自動管理装置
JP3437600B2 (ja) 1993-03-15 2003-08-18 株式会社荏原製作所 はんだめっき液自動分析方法及び装置
US5885138A (en) 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
JP3315544B2 (ja) 1994-11-29 2002-08-19 株式会社荏原製作所 半導体ウエハ研磨装置および方法
JP3583490B2 (ja) 1994-12-28 2004-11-04 株式会社荏原製作所 ポリッシング装置
JPH08187660A (ja) 1994-12-28 1996-07-23 Ebara Corp ポリッシング装置
JP3583491B2 (ja) 1994-12-28 2004-11-04 株式会社荏原製作所 ポリッシング装置および方法
US5827110A (en) 1994-12-28 1998-10-27 Kabushiki Kaisha Toshiba Polishing facility
US5679059A (en) 1994-11-29 1997-10-21 Ebara Corporation Polishing aparatus and method
JP3420849B2 (ja) 1993-09-21 2003-06-30 株式会社東芝 ポリッシング装置及び方法
KR100390293B1 (ko) 1993-09-21 2003-09-02 가부시끼가이샤 도시바 폴리싱장치
JP3803130B2 (ja) 1994-12-06 2006-08-02 株式会社荏原製作所 ポリッシング装置及びポリッシング方法
JP3044277B2 (ja) * 1994-12-21 2000-05-22 信越半導体株式会社 ウェーハの洗浄及び洗浄乾燥装置
JP3579802B2 (ja) * 1994-12-27 2004-10-20 秋田製錬株式会社 陰極板の自動搬送処理装置
JPH08222616A (ja) * 1995-02-13 1996-08-30 Dainippon Screen Mfg Co Ltd 基板処理装置
US5891513A (en) * 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5723387A (en) 1996-07-22 1998-03-03 Industrial Technology Research Institute Method and apparatus for forming very small scale Cu interconnect metallurgy on semiconductor substrates
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US6110011A (en) 1997-11-10 2000-08-29 Applied Materials, Inc. Integrated electrodeposition and chemical-mechanical polishing tool
US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6254760B1 (en) * 1999-03-05 2001-07-03 Applied Materials, Inc. Electro-chemical deposition system and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5092975A (en) * 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5415890A (en) * 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
EP0773308A1 (de) * 1995-11-07 1997-05-14 Sputtered Films, Inc. Vorrichtung und Methode zur kontrollierten Beschichtung von Wafern
JPH10163208A (ja) * 1996-11-28 1998-06-19 Ind Technol Res Inst 半導体基板上に極小スケールのＣｕ相互接続金属を形成する方法及び装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 11 30 September 1998 (1998-09-30) *

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US6294059B1 (en) 2001-09-25
TW405158B (en) 2000-09-11
EP0903774A2 (de) 1999-03-24
DE69839066D1 (de) 2008-03-20
EP0903774B1 (de) 2008-01-30
US20040163947A1 (en) 2004-08-26
DE69839066T2 (de) 2009-01-22
KR100554855B1 (ko) 2006-06-14
US6929722B2 (en) 2005-08-16
KR19990029870A (ko) 1999-04-26
US20020005359A1 (en) 2002-01-17

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