DE69808803T2 - Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid - Google Patents
Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbidInfo
- Publication number
- DE69808803T2 DE69808803T2 DE69808803T DE69808803T DE69808803T2 DE 69808803 T2 DE69808803 T2 DE 69808803T2 DE 69808803 T DE69808803 T DE 69808803T DE 69808803 T DE69808803 T DE 69808803T DE 69808803 T2 DE69808803 T2 DE 69808803T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon carbide
- chemical vapor
- vapor deposition
- reactor
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 55
- 238000009395 breeding Methods 0.000 title 1
- 230000001488 breeding effect Effects 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 53
- 239000012159 carrier gas Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000001257 hydrogen Substances 0.000 claims abstract description 35
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 35
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 52
- 229910052786 argon Inorganic materials 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 9
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Products (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/992,157 US6063186A (en) | 1997-12-17 | 1997-12-17 | Growth of very uniform silicon carbide epitaxial layers |
| PCT/US1998/026558 WO1999031306A1 (en) | 1997-12-17 | 1998-12-14 | Growth of very uniform silicon carbide epitaxial layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69808803D1 DE69808803D1 (de) | 2002-11-21 |
| DE69808803T2 true DE69808803T2 (de) | 2003-09-18 |
Family
ID=25537981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69808803T Expired - Lifetime DE69808803T2 (de) | 1997-12-17 | 1998-12-14 | Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US6063186A (enExample) |
| EP (1) | EP1042544B1 (enExample) |
| JP (1) | JP4195192B2 (enExample) |
| KR (3) | KR100853553B1 (enExample) |
| CN (2) | CN100560792C (enExample) |
| AT (1) | ATE226266T1 (enExample) |
| AU (1) | AU2086699A (enExample) |
| CA (1) | CA2312790C (enExample) |
| DE (1) | DE69808803T2 (enExample) |
| ES (1) | ES2184354T3 (enExample) |
| WO (1) | WO1999031306A1 (enExample) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803546B1 (en) | 1999-07-08 | 2004-10-12 | Applied Materials, Inc. | Thermally processing a substrate |
| EP1549787A1 (en) * | 2002-10-03 | 2005-07-06 | Koninklijke Philips Electronics N.V. | Method and apparatus for forming epitaxial layers |
| US6952024B2 (en) * | 2003-02-13 | 2005-10-04 | Cree, Inc. | Group III nitride LED with silicon carbide cladding layer |
| US6987281B2 (en) * | 2003-02-13 | 2006-01-17 | Cree, Inc. | Group III nitride contact structures for light emitting devices |
| US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
| US7112860B2 (en) * | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
| US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
| US6964917B2 (en) * | 2003-04-08 | 2005-11-15 | Cree, Inc. | Semi-insulating silicon carbide produced by Neutron transmutation doping |
| US7147713B2 (en) * | 2003-04-30 | 2006-12-12 | Cree, Inc. | Phase controlled sublimation |
| US7247513B2 (en) * | 2003-05-08 | 2007-07-24 | Caracal, Inc. | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
| CN1802755B (zh) * | 2003-05-09 | 2012-05-16 | 克里公司 | 通过离子注入进行隔离的led制造方法 |
| US7018554B2 (en) * | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
| JP4387159B2 (ja) * | 2003-10-28 | 2009-12-16 | 東洋炭素株式会社 | 黒鉛材料、炭素繊維強化炭素複合材料、及び、膨張黒鉛シート |
| CN100418247C (zh) * | 2003-11-07 | 2008-09-10 | 崇越科技股份有限公司 | 多腔体分离外延层有机金属化学气相外延装置及方法 |
| US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
| US7230274B2 (en) * | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
| US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
| US7173285B2 (en) | 2004-03-18 | 2007-02-06 | Cree, Inc. | Lithographic methods to reduce stacking fault nucleation sites |
| US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
| CN100430516C (zh) * | 2005-03-18 | 2008-11-05 | 西北工业大学 | 碳/碳复合材料表面碳化硅纳米线的制备方法 |
| US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
| US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
| US8193537B2 (en) | 2006-06-19 | 2012-06-05 | Ss Sc Ip, Llc | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
| US7821015B2 (en) | 2006-06-19 | 2010-10-26 | Semisouth Laboratories, Inc. | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
| WO2008011022A1 (en) * | 2006-07-19 | 2008-01-24 | Dow Corning Corporation | Method of manufacturing substrates having improved carrier lifetimes |
| ITMI20061809A1 (it) * | 2006-09-25 | 2008-03-26 | E T C Srl | Processo per realizzare un sustrato di carburo di silicio per applicazioni microelettroniche |
| US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
| US20080173239A1 (en) * | 2007-01-24 | 2008-07-24 | Yuri Makarov | Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor |
| CN100497760C (zh) * | 2007-07-24 | 2009-06-10 | 中国电子科技集团公司第五十五研究所 | 高掺杂浓度的碳化硅外延生长的方法 |
| US8536582B2 (en) | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
| CN101812730B (zh) * | 2010-04-23 | 2013-02-13 | 中南大学 | 超长单晶β-SiC纳米线无金属催化剂的制备方法 |
| JP2011243640A (ja) * | 2010-05-14 | 2011-12-01 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
| US8685845B2 (en) | 2010-08-20 | 2014-04-01 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
| JP5212455B2 (ja) * | 2010-12-16 | 2013-06-19 | 株式会社デンソー | 炭化珪素単結晶の製造装置 |
| SE536605C2 (sv) | 2012-01-30 | 2014-03-25 | Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi | |
| CN102646578B (zh) * | 2012-05-09 | 2014-09-24 | 中国电子科技集团公司第五十五研究所 | 提高碳化硅多层结构外延材料批次间掺杂均匀性的方法 |
| JP2014013850A (ja) * | 2012-07-05 | 2014-01-23 | Sumitomo Electric Ind Ltd | 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置 |
| TW201415541A (zh) * | 2012-10-11 | 2014-04-16 | Ritedia Corp | 磊晶成長方法 |
| JP6036200B2 (ja) * | 2012-11-13 | 2016-11-30 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
| US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
| US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
| US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
| JP5803979B2 (ja) | 2013-05-29 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 |
| WO2015129867A1 (ja) * | 2014-02-28 | 2015-09-03 | 新日鐵住金株式会社 | エピタキシャル炭化珪素ウエハの製造方法 |
| CN104593865A (zh) * | 2014-12-25 | 2015-05-06 | 廖奇泊 | 碳化硅垒晶层的制造方法 |
| US9711353B2 (en) | 2015-02-13 | 2017-07-18 | Panasonic Corporation | Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas |
| JP2016028009A (ja) * | 2015-09-02 | 2016-02-25 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 |
| US10249493B2 (en) | 2015-12-30 | 2019-04-02 | Siltronic Ag | Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber |
| JP6969628B2 (ja) * | 2016-02-15 | 2021-11-24 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP6690282B2 (ja) * | 2016-02-15 | 2020-04-28 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| CA3058399A1 (en) | 2017-03-29 | 2018-10-04 | Pallidus, Inc. | Sic volumetric shapes and methods of forming boules |
| CN117587507B (zh) * | 2024-01-19 | 2024-04-05 | 宁波合盛新材料有限公司 | 一种改善碳化硅外延片掺杂均匀性的方法及装置 |
| CN118685758B (zh) * | 2024-08-27 | 2024-12-17 | 浙江晶诚新材料有限公司 | 碳化硅涂层的制备方法与带有碳化硅涂层的基体 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61186288A (ja) * | 1985-02-14 | 1986-08-19 | Nec Corp | 炭化珪素化合物半導体の気相エピタキシヤル成長装置 |
| US4912063A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Growth of beta-sic thin films and semiconductor devices fabricated thereon |
| US4912064A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon |
| JPH02296799A (ja) * | 1989-05-10 | 1990-12-07 | Nec Corp | 炭化珪素の成長方法 |
| US5200022A (en) * | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
| US5374412A (en) * | 1992-07-31 | 1994-12-20 | Cvd, Inc. | Highly polishable, highly thermally conductive silicon carbide |
| RU2067905C1 (ru) * | 1993-04-23 | 1996-10-20 | Новосибирский научно-исследовательский институт авиационной технологии и организации производства | Способ автоматического регулирования толщины проката и устройство для его осуществления |
| DE4432813A1 (de) * | 1994-09-15 | 1996-03-21 | Siemens Ag | CVD-Verfahren zum Herstellen einer einkristallinen Silicimcarbidschicht |
| SE9500327D0 (sv) * | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Device for epitaxially growing SiC by CVD |
| SE9502288D0 (sv) * | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
| SE9503427D0 (sv) * | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A method for epitaxially growing objects and a device for such a growth |
| SE9503428D0 (sv) * | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A method for epitaxially growing objects and a device for such a growth |
| SE9503426D0 (sv) * | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A device for heat treatment of objects and a method for producing a susceptor |
| SE9600705D0 (sv) * | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
| SE9600704D0 (sv) * | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
| US6165874A (en) * | 1997-07-03 | 2000-12-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
-
1997
- 1997-12-17 US US08/992,157 patent/US6063186A/en not_active Expired - Lifetime
-
1998
- 1998-12-14 AT AT98965390T patent/ATE226266T1/de not_active IP Right Cessation
- 1998-12-14 WO PCT/US1998/026558 patent/WO1999031306A1/en not_active Ceased
- 1998-12-14 CN CNB2006101320892A patent/CN100560792C/zh not_active Expired - Lifetime
- 1998-12-14 DE DE69808803T patent/DE69808803T2/de not_active Expired - Lifetime
- 1998-12-14 EP EP98965390A patent/EP1042544B1/en not_active Expired - Lifetime
- 1998-12-14 CA CA002312790A patent/CA2312790C/en not_active Expired - Fee Related
- 1998-12-14 CN CNB988123282A patent/CN1313653C/zh not_active Expired - Lifetime
- 1998-12-14 KR KR1020067022993A patent/KR100853553B1/ko not_active Expired - Lifetime
- 1998-12-14 AU AU20866/99A patent/AU2086699A/en not_active Abandoned
- 1998-12-14 KR KR1020067008905A patent/KR100718575B1/ko not_active Expired - Lifetime
- 1998-12-14 KR KR1020007006611A patent/KR20010024730A/ko not_active Ceased
- 1998-12-14 JP JP2000539200A patent/JP4195192B2/ja not_active Expired - Lifetime
- 1998-12-14 ES ES98965390T patent/ES2184354T3/es not_active Expired - Lifetime
-
2000
- 2000-02-11 US US09/502,612 patent/US6297522B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AU2086699A (en) | 1999-07-05 |
| ES2184354T3 (es) | 2003-04-01 |
| KR20010024730A (ko) | 2001-03-26 |
| CN100560792C (zh) | 2009-11-18 |
| ATE226266T1 (de) | 2002-11-15 |
| US6297522B1 (en) | 2001-10-02 |
| CN1958841A (zh) | 2007-05-09 |
| EP1042544B1 (en) | 2002-10-16 |
| CN1282386A (zh) | 2001-01-31 |
| KR100718575B1 (ko) | 2007-05-15 |
| CA2312790C (en) | 2008-08-05 |
| US6063186A (en) | 2000-05-16 |
| CA2312790A1 (en) | 1999-06-24 |
| KR20060061405A (ko) | 2006-06-07 |
| JP2002508298A (ja) | 2002-03-19 |
| EP1042544A1 (en) | 2000-10-11 |
| DE69808803D1 (de) | 2002-11-21 |
| WO1999031306A1 (en) | 1999-06-24 |
| CN1313653C (zh) | 2007-05-02 |
| JP4195192B2 (ja) | 2008-12-10 |
| KR100853553B1 (ko) | 2008-08-21 |
| KR20060121996A (ko) | 2006-11-29 |
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