DE69006605T2 - Verfahren zur Herstellung einer Einkristallschicht aus Diamant. - Google Patents

Verfahren zur Herstellung einer Einkristallschicht aus Diamant.

Info

Publication number
DE69006605T2
DE69006605T2 DE69006605T DE69006605T DE69006605T2 DE 69006605 T2 DE69006605 T2 DE 69006605T2 DE 69006605 T DE69006605 T DE 69006605T DE 69006605 T DE69006605 T DE 69006605T DE 69006605 T2 DE69006605 T2 DE 69006605T2
Authority
DE
Germany
Prior art keywords
diamond
producing
single crystal
crystal layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69006605T
Other languages
English (en)
Other versions
DE69006605D1 (de
Inventor
Hiromu Shiomi
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69006605D1 publication Critical patent/DE69006605D1/de
Publication of DE69006605T2 publication Critical patent/DE69006605T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69006605T 1989-03-07 1990-03-07 Verfahren zur Herstellung einer Einkristallschicht aus Diamant. Expired - Fee Related DE69006605T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1054477A JP2730145B2 (ja) 1989-03-07 1989-03-07 単結晶ダイヤモンド層の形成法

Publications (2)

Publication Number Publication Date
DE69006605D1 DE69006605D1 (de) 1994-03-24
DE69006605T2 true DE69006605T2 (de) 1994-07-14

Family

ID=12971749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69006605T Expired - Fee Related DE69006605T2 (de) 1989-03-07 1990-03-07 Verfahren zur Herstellung einer Einkristallschicht aus Diamant.

Country Status (4)

Country Link
US (1) US5387310A (de)
EP (1) EP0386726B1 (de)
JP (1) JP2730145B2 (de)
DE (1) DE69006605T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5800879A (en) * 1991-05-16 1998-09-01 Us Navy Deposition of high quality diamond film on refractory nitride
JPH05221791A (ja) * 1991-12-18 1993-08-31 Kobe Steel Ltd 燃焼法によるダイヤモンド合成法
EP0630994B1 (de) * 1993-01-14 1999-04-07 Sumitomo Electric Industries, Ltd. Verfahren zur dampfphasendiamantsynthese
JPH06247793A (ja) * 1993-02-22 1994-09-06 Sumitomo Electric Ind Ltd 単結晶ダイヤモンドおよび製造法
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
JPH07243064A (ja) * 1994-01-03 1995-09-19 Xerox Corp 基板清掃方法
DE69535861D1 (de) 1994-06-24 2008-11-27 Sumitomo Electric Industries Wafer und sein Herstellungsverfahren
JP3728465B2 (ja) * 1994-11-25 2005-12-21 株式会社神戸製鋼所 単結晶ダイヤモンド膜の形成方法
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US8591856B2 (en) * 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
DE60115435T2 (de) * 2000-06-15 2006-08-31 Element Six (Pty) Ltd. Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
DK3078667T3 (en) * 2001-01-25 2019-01-07 The United States Of America Represented By The Sec Dep Of Health And Human Services Formulation of boric acid compounds
CA2456847C (en) * 2001-08-08 2013-04-23 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
US7481879B2 (en) * 2004-01-16 2009-01-27 Sumitomo Electric Industries, Ltd. Diamond single crystal substrate manufacturing method and diamond single crystal substrate
US7687146B1 (en) 2004-02-11 2010-03-30 Zyvex Labs, Llc Simple tool for positional diamond mechanosynthesis, and its method of manufacture
US20050181210A1 (en) * 2004-02-13 2005-08-18 Doering Patrick J. Diamond structure separation
US7615203B2 (en) 2004-11-05 2009-11-10 Sumitomo Electric Industries, Ltd. Single crystal diamond
JP5002982B2 (ja) 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
JP6112485B2 (ja) * 2013-09-19 2017-04-12 国立研究開発法人産業技術総合研究所 単結晶ダイヤモンドの製造方法
US10508342B2 (en) * 2016-08-29 2019-12-17 Creating Nano Technologies, Inc. Method for manufacturing diamond-like carbon film
WO2019059123A1 (ja) * 2017-09-19 2019-03-28 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195091A (ja) * 1984-03-15 1985-10-03 Namiki Precision Jewel Co Ltd ダイヤモンド薄膜の製造方法
JPS61286299A (ja) * 1985-06-07 1986-12-16 Asahi Chem Ind Co Ltd ダイヤモンドの製造方法
JPH0717479B2 (ja) * 1985-12-09 1995-03-01 京セラ株式会社 ダイヤモンド膜の製造方法
US4863529A (en) * 1987-03-12 1989-09-05 Sumitomo Electric Industries, Ltd. Thin film single crystal diamond substrate
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
JPS63252997A (ja) * 1987-04-07 1988-10-20 Sharp Corp ダイヤモンド単結晶の製造方法
NO881723L (no) * 1987-04-22 1988-10-24 Idemitsu Petrochemical Co Fremgangsmaate og innretning for fremstilling av diamanter.
JP2636856B2 (ja) * 1987-10-13 1997-07-30 株式会社リコー ダイヤモンド薄膜の製造方法
GB8810111D0 (en) * 1988-04-28 1988-06-02 Jones B L Diamond growth

Also Published As

Publication number Publication date
EP0386726B1 (de) 1994-02-16
JPH02233591A (ja) 1990-09-17
JP2730145B2 (ja) 1998-03-25
US5387310A (en) 1995-02-07
EP0386726A1 (de) 1990-09-12
DE69006605D1 (de) 1994-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee