DE69012623D1 - Verfahren zur Herstellung einer feinen Struktur. - Google Patents
Verfahren zur Herstellung einer feinen Struktur.Info
- Publication number
- DE69012623D1 DE69012623D1 DE69012623T DE69012623T DE69012623D1 DE 69012623 D1 DE69012623 D1 DE 69012623D1 DE 69012623 T DE69012623 T DE 69012623T DE 69012623 T DE69012623 T DE 69012623T DE 69012623 D1 DE69012623 D1 DE 69012623D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- fine structure
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1075317A JP2737225B2 (ja) | 1989-03-27 | 1989-03-27 | 微細パターン形成材料およびパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69012623D1 true DE69012623D1 (de) | 1994-10-27 |
DE69012623T2 DE69012623T2 (de) | 1995-04-13 |
Family
ID=13572761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69012623T Expired - Fee Related DE69012623T2 (de) | 1989-03-27 | 1990-03-24 | Verfahren zur Herstellung einer feinen Struktur. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5093224A (de) |
EP (1) | EP0392236B1 (de) |
JP (1) | JP2737225B2 (de) |
DE (1) | DE69012623T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2586692B2 (ja) * | 1990-05-24 | 1997-03-05 | 松下電器産業株式会社 | パターン形成材料およびパターン形成方法 |
JPH0442229A (ja) * | 1990-06-08 | 1992-02-12 | Fujitsu Ltd | レジスト材料およびパターンの形成方法 |
JPH04330709A (ja) * | 1991-04-25 | 1992-11-18 | Matsushita Electric Ind Co Ltd | 微細パターン形成材料およびパターン形成方法 |
KR100380546B1 (ko) * | 1994-02-24 | 2003-06-25 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체집적회로장치의제조방법 |
KR0140472B1 (ko) * | 1994-10-12 | 1998-06-15 | 김주용 | 감광막 패턴 형성방법 |
KR100206597B1 (ko) * | 1995-12-29 | 1999-07-01 | 김영환 | 반도체 장치의 미세패턴 제조방법 |
US6270948B1 (en) | 1996-08-22 | 2001-08-07 | Kabushiki Kaisha Toshiba | Method of forming pattern |
JP3965547B2 (ja) * | 1999-12-01 | 2007-08-29 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
US7223518B2 (en) * | 2003-06-06 | 2007-05-29 | Georgia Tech Research Corporation | Compositions and methods of use thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57202537A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Resist composition for dry development |
US4464460A (en) * | 1983-06-28 | 1984-08-07 | International Business Machines Corporation | Process for making an imaged oxygen-reactive ion etch barrier |
US4588801A (en) * | 1984-04-05 | 1986-05-13 | The United States Of America As Represented By The United States Department Of Energy | Polysilane positive photoresist materials and methods for their use |
DE3574418D1 (en) * | 1984-05-30 | 1989-12-28 | Fujitsu Ltd | Pattern-forming material and its production and use |
US4810601A (en) * | 1984-12-07 | 1989-03-07 | International Business Machines Corporation | Top imaged resists |
-
1989
- 1989-03-27 JP JP1075317A patent/JP2737225B2/ja not_active Expired - Lifetime
-
1990
- 1990-03-20 US US07/496,020 patent/US5093224A/en not_active Expired - Fee Related
- 1990-03-24 EP EP90105610A patent/EP0392236B1/de not_active Expired - Lifetime
- 1990-03-24 DE DE69012623T patent/DE69012623T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5093224A (en) | 1992-03-03 |
JP2737225B2 (ja) | 1998-04-08 |
DE69012623T2 (de) | 1995-04-13 |
JPH02251963A (ja) | 1990-10-09 |
EP0392236A1 (de) | 1990-10-17 |
EP0392236B1 (de) | 1994-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |