JP4195192B2 - 極めて均一な炭化ケイ素エピタキシャル層の成長 - Google Patents

極めて均一な炭化ケイ素エピタキシャル層の成長 Download PDF

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Publication number
JP4195192B2
JP4195192B2 JP2000539200A JP2000539200A JP4195192B2 JP 4195192 B2 JP4195192 B2 JP 4195192B2 JP 2000539200 A JP2000539200 A JP 2000539200A JP 2000539200 A JP2000539200 A JP 2000539200A JP 4195192 B2 JP4195192 B2 JP 4195192B2
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silicon carbide
carrier gas
reactor
vapor deposition
chemical vapor
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JP2000539200A
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Japanese (ja)
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JP2002508298A (ja
JP2002508298A5 (enExample
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コルディナ，オーレ・クレース・エリック
アーヴィン，ケネス・ジョージ
ペイズリー，マイケル・ジェームズ
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Wolfspeed Inc
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Cree Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2000539200A 1997-12-17 1998-12-14 極めて均一な炭化ケイ素エピタキシャル層の成長 Expired - Lifetime JP4195192B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/992,157 US6063186A (en) 1997-12-17 1997-12-17 Growth of very uniform silicon carbide epitaxial layers
US08/992,157 1997-12-17
PCT/US1998/026558 WO1999031306A1 (en) 1997-12-17 1998-12-14 Growth of very uniform silicon carbide epitaxial layers

Publications (3)

Publication Number Publication Date
JP2002508298A JP2002508298A (ja) 2002-03-19
JP2002508298A5 JP2002508298A5 (enExample) 2005-11-17
JP4195192B2 true JP4195192B2 (ja) 2008-12-10

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Application Number Title Priority Date Filing Date
JP2000539200A Expired - Lifetime JP4195192B2 (ja) 1997-12-17 1998-12-14 極めて均一な炭化ケイ素エピタキシャル層の成長

Country Status (11)

Country Link
US (2) US6063186A (enExample)
EP (1) EP1042544B1 (enExample)
JP (1) JP4195192B2 (enExample)
KR (3) KR100853553B1 (enExample)
CN (2) CN100560792C (enExample)
AT (1) ATE226266T1 (enExample)
AU (1) AU2086699A (enExample)
CA (1) CA2312790C (enExample)
DE (1) DE69808803T2 (enExample)
ES (1) ES2184354T3 (enExample)
WO (1) WO1999031306A1 (enExample)

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US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US6964917B2 (en) * 2003-04-08 2005-11-15 Cree, Inc. Semi-insulating silicon carbide produced by Neutron transmutation doping
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
CN1802755B (zh) * 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
JP4387159B2 (ja) * 2003-10-28 2009-12-16 東洋炭素株式会社 黒鉛材料、炭素繊維強化炭素複合材料、及び、膨張黒鉛シート
CN100418247C (zh) * 2003-11-07 2008-09-10 崇越科技股份有限公司 多腔体分离外延层有机金属化学气相外延装置及方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
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US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
CN100430516C (zh) * 2005-03-18 2008-11-05 西北工业大学 碳/碳复合材料表面碳化硅纳米线的制备方法
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
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US7821015B2 (en) 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
WO2008011022A1 (en) * 2006-07-19 2008-01-24 Dow Corning Corporation Method of manufacturing substrates having improved carrier lifetimes
ITMI20061809A1 (it) * 2006-09-25 2008-03-26 E T C Srl Processo per realizzare un sustrato di carburo di silicio per applicazioni microelettroniche
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US20080173239A1 (en) * 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
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US8536582B2 (en) 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
CN101812730B (zh) * 2010-04-23 2013-02-13 中南大学 超长单晶β-SiC纳米线无金属催化剂的制备方法
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CN102646578B (zh) * 2012-05-09 2014-09-24 中国电子科技集团公司第五十五研究所 提高碳化硅多层结构外延材料批次间掺杂均匀性的方法
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Also Published As

Publication number Publication date
AU2086699A (en) 1999-07-05
ES2184354T3 (es) 2003-04-01
KR20010024730A (ko) 2001-03-26
CN100560792C (zh) 2009-11-18
ATE226266T1 (de) 2002-11-15
US6297522B1 (en) 2001-10-02
CN1958841A (zh) 2007-05-09
EP1042544B1 (en) 2002-10-16
CN1282386A (zh) 2001-01-31
KR100718575B1 (ko) 2007-05-15
CA2312790C (en) 2008-08-05
DE69808803T2 (de) 2003-09-18
US6063186A (en) 2000-05-16
CA2312790A1 (en) 1999-06-24
KR20060061405A (ko) 2006-06-07
JP2002508298A (ja) 2002-03-19
EP1042544A1 (en) 2000-10-11
DE69808803D1 (de) 2002-11-21
WO1999031306A1 (en) 1999-06-24
CN1313653C (zh) 2007-05-02
KR100853553B1 (ko) 2008-08-21
KR20060121996A (ko) 2006-11-29

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