KR100853553B1 - 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장 - Google Patents

고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장 Download PDF

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Publication number
KR100853553B1
KR100853553B1 KR1020067022993A KR20067022993A KR100853553B1 KR 100853553 B1 KR100853553 B1 KR 100853553B1 KR 1020067022993 A KR1020067022993 A KR 1020067022993A KR 20067022993 A KR20067022993 A KR 20067022993A KR 100853553 B1 KR100853553 B1 KR 100853553B1
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South Korea
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silicon carbide
gas
epitaxial layer
carrier gas
reactor
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KR20060121996A (ko
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올레 클라에스 에릭 코르디나
케네쓰 조지 어바인
마이클 제임스 페이즐리
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크리 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
KR1020067022993A 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장 Expired - Lifetime KR100853553B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/992,157 1997-12-17
US08/992,157 US6063186A (en) 1997-12-17 1997-12-17 Growth of very uniform silicon carbide epitaxial layers

Related Parent Applications (1)

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KR1020067008905A Division KR100718575B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장

Publications (2)

Publication Number Publication Date
KR20060121996A KR20060121996A (ko) 2006-11-29
KR100853553B1 true KR100853553B1 (ko) 2008-08-21

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Family Applications (3)

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KR1020067022993A Expired - Lifetime KR100853553B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장
KR1020007006611A Ceased KR20010024730A (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장
KR1020067008905A Expired - Lifetime KR100718575B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020007006611A Ceased KR20010024730A (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장
KR1020067008905A Expired - Lifetime KR100718575B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장

Country Status (11)

Country Link
US (2) US6063186A (enExample)
EP (1) EP1042544B1 (enExample)
JP (1) JP4195192B2 (enExample)
KR (3) KR100853553B1 (enExample)
CN (2) CN1313653C (enExample)
AT (1) ATE226266T1 (enExample)
AU (1) AU2086699A (enExample)
CA (1) CA2312790C (enExample)
DE (1) DE69808803T2 (enExample)
ES (1) ES2184354T3 (enExample)
WO (1) WO1999031306A1 (enExample)

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US6987281B2 (en) * 2003-02-13 2006-01-17 Cree, Inc. Group III nitride contact structures for light emitting devices
US6952024B2 (en) * 2003-02-13 2005-10-04 Cree, Inc. Group III nitride LED with silicon carbide cladding layer
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US6964917B2 (en) * 2003-04-08 2005-11-15 Cree, Inc. Semi-insulating silicon carbide produced by Neutron transmutation doping
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
CN1802755B (zh) * 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
JP4387159B2 (ja) * 2003-10-28 2009-12-16 東洋炭素株式会社 黒鉛材料、炭素繊維強化炭素複合材料、及び、膨張黒鉛シート
CN100418247C (zh) * 2003-11-07 2008-09-10 崇越科技股份有限公司 多腔体分离外延层有机金属化学气相外延装置及方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7173285B2 (en) 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
CN100430516C (zh) * 2005-03-18 2008-11-05 西北工业大学 碳/碳复合材料表面碳化硅纳米线的制备方法
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US8193537B2 (en) 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US7821015B2 (en) 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
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US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
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CN101812730B (zh) * 2010-04-23 2013-02-13 中南大学 超长单晶β-SiC纳米线无金属催化剂的制备方法
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JP5212455B2 (ja) * 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
SE536605C2 (sv) 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
CN102646578B (zh) * 2012-05-09 2014-09-24 中国电子科技集团公司第五十五研究所 提高碳化硅多层结构外延材料批次间掺杂均匀性的方法
JP2014013850A (ja) * 2012-07-05 2014-01-23 Sumitomo Electric Ind Ltd 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置
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JP6036200B2 (ja) * 2012-11-13 2016-11-30 富士電機株式会社 炭化珪素半導体装置の製造方法
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CN104593865A (zh) * 2014-12-25 2015-05-06 廖奇泊 碳化硅垒晶层的制造方法
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JP6690282B2 (ja) 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
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Also Published As

Publication number Publication date
KR100718575B1 (ko) 2007-05-15
CA2312790A1 (en) 1999-06-24
EP1042544B1 (en) 2002-10-16
DE69808803T2 (de) 2003-09-18
KR20060121996A (ko) 2006-11-29
CN1313653C (zh) 2007-05-02
DE69808803D1 (de) 2002-11-21
KR20060061405A (ko) 2006-06-07
JP4195192B2 (ja) 2008-12-10
CA2312790C (en) 2008-08-05
CN100560792C (zh) 2009-11-18
ATE226266T1 (de) 2002-11-15
US6063186A (en) 2000-05-16
EP1042544A1 (en) 2000-10-11
CN1282386A (zh) 2001-01-31
KR20010024730A (ko) 2001-03-26
JP2002508298A (ja) 2002-03-19
ES2184354T3 (es) 2003-04-01
WO1999031306A1 (en) 1999-06-24
AU2086699A (en) 1999-07-05
CN1958841A (zh) 2007-05-09
US6297522B1 (en) 2001-10-02

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