CN1313653C - 生长非常均匀的碳化硅外延层 - Google Patents

生长非常均匀的碳化硅外延层 Download PDF

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Publication number
CN1313653C
CN1313653C CNB988123282A CN98812328A CN1313653C CN 1313653 C CN1313653 C CN 1313653C CN B988123282 A CNB988123282 A CN B988123282A CN 98812328 A CN98812328 A CN 98812328A CN 1313653 C CN1313653 C CN 1313653C
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China
Prior art keywords
gas
carrier gas
reactor
hydrogen
silicon carbide
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Expired - Lifetime
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CNB988123282A
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English (en)
Chinese (zh)
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CN1282386A (zh
Inventor
O·C·E·科迪纳
K·G·伊尔温
M·J·派斯雷
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Wolfspeed Inc
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Cree Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
CNB988123282A 1997-12-17 1998-12-14 生长非常均匀的碳化硅外延层 Expired - Lifetime CN1313653C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/992,157 US6063186A (en) 1997-12-17 1997-12-17 Growth of very uniform silicon carbide epitaxial layers
US08/992,157 1997-12-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101320892A Division CN100560792C (zh) 1997-12-17 1998-12-14 生长非常均匀的碳化硅外延层

Publications (2)

Publication Number Publication Date
CN1282386A CN1282386A (zh) 2001-01-31
CN1313653C true CN1313653C (zh) 2007-05-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2006101320892A Expired - Lifetime CN100560792C (zh) 1997-12-17 1998-12-14 生长非常均匀的碳化硅外延层
CNB988123282A Expired - Lifetime CN1313653C (zh) 1997-12-17 1998-12-14 生长非常均匀的碳化硅外延层

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNB2006101320892A Expired - Lifetime CN100560792C (zh) 1997-12-17 1998-12-14 生长非常均匀的碳化硅外延层

Country Status (11)

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US (2) US6063186A (enExample)
EP (1) EP1042544B1 (enExample)
JP (1) JP4195192B2 (enExample)
KR (3) KR100853553B1 (enExample)
CN (2) CN100560792C (enExample)
AT (1) ATE226266T1 (enExample)
AU (1) AU2086699A (enExample)
CA (1) CA2312790C (enExample)
DE (1) DE69808803T2 (enExample)
ES (1) ES2184354T3 (enExample)
WO (1) WO1999031306A1 (enExample)

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US6952024B2 (en) * 2003-02-13 2005-10-04 Cree, Inc. Group III nitride LED with silicon carbide cladding layer
US6987281B2 (en) * 2003-02-13 2006-01-17 Cree, Inc. Group III nitride contact structures for light emitting devices
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US6964917B2 (en) * 2003-04-08 2005-11-15 Cree, Inc. Semi-insulating silicon carbide produced by Neutron transmutation doping
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
CN1802755B (zh) * 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
JP4387159B2 (ja) * 2003-10-28 2009-12-16 東洋炭素株式会社 黒鉛材料、炭素繊維強化炭素複合材料、及び、膨張黒鉛シート
CN100418247C (zh) * 2003-11-07 2008-09-10 崇越科技股份有限公司 多腔体分离外延层有机金属化学气相外延装置及方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7173285B2 (en) 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
CN100430516C (zh) * 2005-03-18 2008-11-05 西北工业大学 碳/碳复合材料表面碳化硅纳米线的制备方法
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US8193537B2 (en) 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US7821015B2 (en) 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
WO2008011022A1 (en) * 2006-07-19 2008-01-24 Dow Corning Corporation Method of manufacturing substrates having improved carrier lifetimes
ITMI20061809A1 (it) * 2006-09-25 2008-03-26 E T C Srl Processo per realizzare un sustrato di carburo di silicio per applicazioni microelettroniche
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US20080173239A1 (en) * 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
CN100497760C (zh) * 2007-07-24 2009-06-10 中国电子科技集团公司第五十五研究所 高掺杂浓度的碳化硅外延生长的方法
US8536582B2 (en) 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
CN101812730B (zh) * 2010-04-23 2013-02-13 中南大学 超长单晶β-SiC纳米线无金属催化剂的制备方法
JP2011243640A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
JP5212455B2 (ja) * 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
SE536605C2 (sv) 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
CN102646578B (zh) * 2012-05-09 2014-09-24 中国电子科技集团公司第五十五研究所 提高碳化硅多层结构外延材料批次间掺杂均匀性的方法
JP2014013850A (ja) * 2012-07-05 2014-01-23 Sumitomo Electric Ind Ltd 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置
TW201415541A (zh) * 2012-10-11 2014-04-16 Ritedia Corp 磊晶成長方法
JP6036200B2 (ja) * 2012-11-13 2016-11-30 富士電機株式会社 炭化珪素半導体装置の製造方法
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
JP5803979B2 (ja) 2013-05-29 2015-11-04 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
WO2015129867A1 (ja) * 2014-02-28 2015-09-03 新日鐵住金株式会社 エピタキシャル炭化珪素ウエハの製造方法
CN104593865A (zh) * 2014-12-25 2015-05-06 廖奇泊 碳化硅垒晶层的制造方法
US9711353B2 (en) 2015-02-13 2017-07-18 Panasonic Corporation Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas
JP2016028009A (ja) * 2015-09-02 2016-02-25 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
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JP6969628B2 (ja) * 2016-02-15 2021-11-24 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6690282B2 (ja) * 2016-02-15 2020-04-28 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
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CN117587507B (zh) * 2024-01-19 2024-04-05 宁波合盛新材料有限公司 一种改善碳化硅外延片掺杂均匀性的方法及装置
CN118685758B (zh) * 2024-08-27 2024-12-17 浙江晶诚新材料有限公司 碳化硅涂层的制备方法与带有碳化硅涂层的基体

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DE4432813A1 (de) * 1994-09-15 1996-03-21 Siemens Ag CVD-Verfahren zum Herstellen einer einkristallinen Silicimcarbidschicht

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Publication number Priority date Publication date Assignee Title
JPH02296799A (ja) * 1989-05-10 1990-12-07 Nec Corp 炭化珪素の成長方法
DE4432813A1 (de) * 1994-09-15 1996-03-21 Siemens Ag CVD-Verfahren zum Herstellen einer einkristallinen Silicimcarbidschicht

Also Published As

Publication number Publication date
AU2086699A (en) 1999-07-05
ES2184354T3 (es) 2003-04-01
KR20010024730A (ko) 2001-03-26
CN100560792C (zh) 2009-11-18
ATE226266T1 (de) 2002-11-15
US6297522B1 (en) 2001-10-02
CN1958841A (zh) 2007-05-09
EP1042544B1 (en) 2002-10-16
CN1282386A (zh) 2001-01-31
KR100718575B1 (ko) 2007-05-15
CA2312790C (en) 2008-08-05
DE69808803T2 (de) 2003-09-18
US6063186A (en) 2000-05-16
CA2312790A1 (en) 1999-06-24
KR20060061405A (ko) 2006-06-07
JP2002508298A (ja) 2002-03-19
EP1042544A1 (en) 2000-10-11
DE69808803D1 (de) 2002-11-21
WO1999031306A1 (en) 1999-06-24
JP4195192B2 (ja) 2008-12-10
KR100853553B1 (ko) 2008-08-21
KR20060121996A (ko) 2006-11-29

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Granted publication date: 20070502