CN1313653C - 生长非常均匀的碳化硅外延层 - Google Patents
生长非常均匀的碳化硅外延层 Download PDFInfo
- Publication number
- CN1313653C CN1313653C CNB988123282A CN98812328A CN1313653C CN 1313653 C CN1313653 C CN 1313653C CN B988123282 A CNB988123282 A CN B988123282A CN 98812328 A CN98812328 A CN 98812328A CN 1313653 C CN1313653 C CN 1313653C
- Authority
- CN
- China
- Prior art keywords
- gas
- carrier gas
- reactor
- hydrogen
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 53
- 239000007789 gas Substances 0.000 claims abstract description 102
- 239000012159 carrier gas Substances 0.000 claims abstract description 57
- 239000001257 hydrogen Substances 0.000 claims abstract description 44
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 44
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 54
- 229910052786 argon Inorganic materials 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 16
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000407 epitaxy Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000001294 propane Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000004821 distillation Methods 0.000 claims 3
- 150000001722 carbon compounds Chemical class 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 239000010703 silicon Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Abstract
Description
实施例 | 平均厚度(μm) | 标准偏差(μm) | 平均标准偏差(%) | 载气(l/min) |
1 | 28.5 | 1.61 | 5.66 | 44H2 |
2 | 58.7 | 1.33 | 2.26 | 60H2 |
3 | 26.0 | 0.61 | 2.34 | 40H2+4Ar |
4 | 28.8 | 0 | 0 | 60H2+1Ar |
5 | 27.5 | 0 | 0 | 60H2+2Ar |
6 | 23.8 | 0 | 0 | 60H2+4Ar |
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/992,157 | 1997-12-17 | ||
US08/992,157 US6063186A (en) | 1997-12-17 | 1997-12-17 | Growth of very uniform silicon carbide epitaxial layers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101320892A Division CN100560792C (zh) | 1997-12-17 | 1998-12-14 | 生长非常均匀的碳化硅外延层 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1282386A CN1282386A (zh) | 2001-01-31 |
CN1313653C true CN1313653C (zh) | 2007-05-02 |
Family
ID=25537981
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988123282A Expired - Lifetime CN1313653C (zh) | 1997-12-17 | 1998-12-14 | 生长非常均匀的碳化硅外延层 |
CNB2006101320892A Expired - Lifetime CN100560792C (zh) | 1997-12-17 | 1998-12-14 | 生长非常均匀的碳化硅外延层 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101320892A Expired - Lifetime CN100560792C (zh) | 1997-12-17 | 1998-12-14 | 生长非常均匀的碳化硅外延层 |
Country Status (11)
Country | Link |
---|---|
US (2) | US6063186A (zh) |
EP (1) | EP1042544B1 (zh) |
JP (1) | JP4195192B2 (zh) |
KR (3) | KR100718575B1 (zh) |
CN (2) | CN1313653C (zh) |
AT (1) | ATE226266T1 (zh) |
AU (1) | AU2086699A (zh) |
CA (1) | CA2312790C (zh) |
DE (1) | DE69808803T2 (zh) |
ES (1) | ES2184354T3 (zh) |
WO (1) | WO1999031306A1 (zh) |
Families Citing this family (51)
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US6803546B1 (en) | 1999-07-08 | 2004-10-12 | Applied Materials, Inc. | Thermally processing a substrate |
CN100442441C (zh) * | 2002-10-03 | 2008-12-10 | Nxp股份有限公司 | 形成外延层的方法和设备 |
US6987281B2 (en) * | 2003-02-13 | 2006-01-17 | Cree, Inc. | Group III nitride contact structures for light emitting devices |
US6952024B2 (en) * | 2003-02-13 | 2005-10-04 | Cree, Inc. | Group III nitride LED with silicon carbide cladding layer |
US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
US7898047B2 (en) * | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
US7112860B2 (en) | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
US6964917B2 (en) * | 2003-04-08 | 2005-11-15 | Cree, Inc. | Semi-insulating silicon carbide produced by Neutron transmutation doping |
US7147713B2 (en) * | 2003-04-30 | 2006-12-12 | Cree, Inc. | Phase controlled sublimation |
US7247513B2 (en) * | 2003-05-08 | 2007-07-24 | Caracal, Inc. | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
JP5122817B2 (ja) * | 2003-05-09 | 2013-01-16 | クリー インコーポレイテッド | イオン・インプラント・アイソレーションによるled製作 |
US7018554B2 (en) * | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
JP4387159B2 (ja) * | 2003-10-28 | 2009-12-16 | 東洋炭素株式会社 | 黒鉛材料、炭素繊維強化炭素複合材料、及び、膨張黒鉛シート |
CN100418247C (zh) * | 2003-11-07 | 2008-09-10 | 崇越科技股份有限公司 | 多腔体分离外延层有机金属化学气相外延装置及方法 |
US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
US7230274B2 (en) * | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
US7173285B2 (en) * | 2004-03-18 | 2007-02-06 | Cree, Inc. | Lithographic methods to reduce stacking fault nucleation sites |
US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
CN100430516C (zh) * | 2005-03-18 | 2008-11-05 | 西北工业大学 | 碳/碳复合材料表面碳化硅纳米线的制备方法 |
US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
US7821015B2 (en) * | 2006-06-19 | 2010-10-26 | Semisouth Laboratories, Inc. | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
US8193537B2 (en) | 2006-06-19 | 2012-06-05 | Ss Sc Ip, Llc | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
JP2009544171A (ja) * | 2006-07-19 | 2009-12-10 | ダウ コ−ニング コ−ポレ−ション | キャリアライフタイムが改善された基板を製造する方法 |
ITMI20061809A1 (it) * | 2006-09-25 | 2008-03-26 | E T C Srl | Processo per realizzare un sustrato di carburo di silicio per applicazioni microelettroniche |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
US20080173239A1 (en) * | 2007-01-24 | 2008-07-24 | Yuri Makarov | Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor |
CN100497760C (zh) * | 2007-07-24 | 2009-06-10 | 中国电子科技集团公司第五十五研究所 | 高掺杂浓度的碳化硅外延生长的方法 |
US8536582B2 (en) | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
CN101812730B (zh) * | 2010-04-23 | 2013-02-13 | 中南大学 | 超长单晶β-SiC纳米线无金属催化剂的制备方法 |
JP2011243640A (ja) * | 2010-05-14 | 2011-12-01 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
US8685845B2 (en) | 2010-08-20 | 2014-04-01 | International Business Machines Corporation | Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas |
JP5212455B2 (ja) * | 2010-12-16 | 2013-06-19 | 株式会社デンソー | 炭化珪素単結晶の製造装置 |
SE536605C2 (sv) | 2012-01-30 | 2014-03-25 | Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi | |
CN102646578B (zh) * | 2012-05-09 | 2014-09-24 | 中国电子科技集团公司第五十五研究所 | 提高碳化硅多层结构外延材料批次间掺杂均匀性的方法 |
JP2014013850A (ja) * | 2012-07-05 | 2014-01-23 | Sumitomo Electric Ind Ltd | 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置 |
TW201415541A (zh) * | 2012-10-11 | 2014-04-16 | Ritedia Corp | 磊晶成長方法 |
JP6036200B2 (ja) * | 2012-11-13 | 2016-11-30 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
JP5803979B2 (ja) | 2013-05-29 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 |
CN105658847B (zh) * | 2014-02-28 | 2018-08-10 | 昭和电工株式会社 | 外延碳化硅晶片的制造方法 |
CN104593865A (zh) * | 2014-12-25 | 2015-05-06 | 廖奇泊 | 碳化硅垒晶层的制造方法 |
US9711353B2 (en) | 2015-02-13 | 2017-07-18 | Panasonic Corporation | Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas |
JP2016028009A (ja) * | 2015-09-02 | 2016-02-25 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 |
US10249493B2 (en) | 2015-12-30 | 2019-04-02 | Siltronic Ag | Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber |
JP6690282B2 (ja) | 2016-02-15 | 2020-04-28 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
JP6969628B2 (ja) * | 2016-02-15 | 2021-11-24 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
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DE4432813A1 (de) * | 1994-09-15 | 1996-03-21 | Siemens Ag | CVD-Verfahren zum Herstellen einer einkristallinen Silicimcarbidschicht |
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SE9503426D0 (sv) * | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A device for heat treatment of objects and a method for producing a susceptor |
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US6165874A (en) * | 1997-07-03 | 2000-12-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
-
1997
- 1997-12-17 US US08/992,157 patent/US6063186A/en not_active Expired - Lifetime
-
1998
- 1998-12-14 KR KR1020067008905A patent/KR100718575B1/ko active IP Right Grant
- 1998-12-14 WO PCT/US1998/026558 patent/WO1999031306A1/en not_active Application Discontinuation
- 1998-12-14 DE DE69808803T patent/DE69808803T2/de not_active Expired - Lifetime
- 1998-12-14 KR KR1020007006611A patent/KR20010024730A/ko not_active Application Discontinuation
- 1998-12-14 CA CA002312790A patent/CA2312790C/en not_active Expired - Fee Related
- 1998-12-14 KR KR1020067022993A patent/KR100853553B1/ko active IP Right Grant
- 1998-12-14 EP EP98965390A patent/EP1042544B1/en not_active Expired - Lifetime
- 1998-12-14 AT AT98965390T patent/ATE226266T1/de not_active IP Right Cessation
- 1998-12-14 AU AU20866/99A patent/AU2086699A/en not_active Abandoned
- 1998-12-14 ES ES98965390T patent/ES2184354T3/es not_active Expired - Lifetime
- 1998-12-14 CN CNB988123282A patent/CN1313653C/zh not_active Expired - Lifetime
- 1998-12-14 CN CNB2006101320892A patent/CN100560792C/zh not_active Expired - Lifetime
- 1998-12-14 JP JP2000539200A patent/JP4195192B2/ja not_active Expired - Lifetime
-
2000
- 2000-02-11 US US09/502,612 patent/US6297522B1/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02296799A (ja) * | 1989-05-10 | 1990-12-07 | Nec Corp | 炭化珪素の成長方法 |
DE4432813A1 (de) * | 1994-09-15 | 1996-03-21 | Siemens Ag | CVD-Verfahren zum Herstellen einer einkristallinen Silicimcarbidschicht |
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CA2312790C (en) | 2008-08-05 |
EP1042544B1 (en) | 2002-10-16 |
KR100718575B1 (ko) | 2007-05-15 |
KR20060121996A (ko) | 2006-11-29 |
AU2086699A (en) | 1999-07-05 |
JP2002508298A (ja) | 2002-03-19 |
DE69808803T2 (de) | 2003-09-18 |
ES2184354T3 (es) | 2003-04-01 |
US6063186A (en) | 2000-05-16 |
KR100853553B1 (ko) | 2008-08-21 |
US6297522B1 (en) | 2001-10-02 |
CN1282386A (zh) | 2001-01-31 |
CN1958841A (zh) | 2007-05-09 |
CN100560792C (zh) | 2009-11-18 |
KR20010024730A (ko) | 2001-03-26 |
KR20060061405A (ko) | 2006-06-07 |
EP1042544A1 (en) | 2000-10-11 |
DE69808803D1 (de) | 2002-11-21 |
WO1999031306A1 (en) | 1999-06-24 |
ATE226266T1 (de) | 2002-11-15 |
JP4195192B2 (ja) | 2008-12-10 |
CA2312790A1 (en) | 1999-06-24 |
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