JPS6115150B2 - - Google Patents
Info
- Publication number
- JPS6115150B2 JPS6115150B2 JP1324178A JP1324178A JPS6115150B2 JP S6115150 B2 JPS6115150 B2 JP S6115150B2 JP 1324178 A JP1324178 A JP 1324178A JP 1324178 A JP1324178 A JP 1324178A JP S6115150 B2 JPS6115150 B2 JP S6115150B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon carbide
- gas
- raw material
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 33
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000009388 chemical precipitation Methods 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- RFBSXFWTSAJAEJ-UHFFFAOYSA-N silane dihydrochloride Chemical compound [SiH4].Cl.Cl RFBSXFWTSAJAEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 7
- 239000005049 silicon tetrachloride Substances 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000001294 propane Substances 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000815 Acheson method Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical class Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1324178A JPS54106100A (en) | 1978-02-07 | 1978-02-07 | Vapor phase chemically depositing method for silicon carbide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1324178A JPS54106100A (en) | 1978-02-07 | 1978-02-07 | Vapor phase chemically depositing method for silicon carbide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54106100A JPS54106100A (en) | 1979-08-20 |
| JPS6115150B2 true JPS6115150B2 (zh) | 1986-04-22 |
Family
ID=11827693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1324178A Granted JPS54106100A (en) | 1978-02-07 | 1978-02-07 | Vapor phase chemically depositing method for silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54106100A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016895A (ja) * | 1983-07-06 | 1985-01-28 | Sanyo Electric Co Ltd | ＳｉＣ単結晶積層体及びその製造方法 |
| JPS62138398A (ja) * | 1985-12-13 | 1987-06-22 | Agency Of Ind Science & Technol | 炭化けい素単結晶の製造法 |
| DE19603323A1 (de) * | 1996-01-30 | 1997-08-07 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung |
| CN105632901B (zh) * | 2016-02-02 | 2018-05-25 | 北京世纪金光半导体有限公司 | 一种采用干式刻蚀方法获得碳化硅衬底的方法 |
| JP7220847B2 (ja) * | 2019-06-26 | 2023-02-13 | 住友金属鉱山株式会社 | 四塩化ケイ素の測定ユニット、四塩化ケイ素の品質評価方法、四塩化ケイ素の品質管理方法、炭化ケイ素基板の製造方法、および、炭化ケイ素基板製造装置 |
-
1978
- 1978-02-07 JP JP1324178A patent/JPS54106100A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54106100A (en) | 1979-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4623425A (en) | Method of fabricating single-crystal substrates of silicon carbide | |
| Takahashi et al. | Low‐temperature growth of 3 C‐SiC on Si substrate by chemical vapor deposition using hexamethyldisilane as a source material | |
| US3956032A (en) | Process for fabricating SiC semiconductor devices | |
| US4421592A (en) | Plasma enhanced deposition of semiconductors | |
| JP3707726B2 (ja) | 炭化珪素の製造方法、複合材料の製造方法 | |
| JPH01162326A (ja) | β−炭化シリコン層の製造方法 | |
| JPH0321519B2 (zh) | ||
| JPH04193799A (ja) | 炭化珪素単結晶の製造方法 | |
| JPS63224225A (ja) | 薄膜単結晶ダイヤモンド基板 | |
| JPS6115150B2 (zh) | ||
| JP3590464B2 (ja) | ４ｈ型単結晶炭化珪素の製造方法 | |
| JPS6120514B2 (zh) | ||
| JPS6045159B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JPS61291495A (ja) | 炭化珪素単結晶基板の製造方法 | |
| KR0124972B1 (ko) | 갈륨 나이트라이드 단결정 박막의 제조방법 | |
| JPH0416597A (ja) | 炭化珪素単結晶の製造方法 | |
| JPS6230699A (ja) | 炭化珪素単結晶基板の製造方法 | |
| JPS6152119B2 (zh) | ||
| JP2773369B2 (ja) | 炭化珪素膜を有する物品の製造方法 | |
| JPH0364480B2 (zh) | ||
| JPH0327515B2 (zh) | ||
| JPS6120515B2 (zh) | ||
| JPS5830280B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JPS60264399A (ja) | 炭化珪素単結晶の製造方法 | |
| JPS61242998A (ja) | 炭化珪素単結晶半導体の製造方法 |