DE69802038T2 - Strahlungsempfindliche Harzzusammensetzung - Google Patents

Strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE69802038T2
DE69802038T2 DE69802038T DE69802038T DE69802038T2 DE 69802038 T2 DE69802038 T2 DE 69802038T2 DE 69802038 T DE69802038 T DE 69802038T DE 69802038 T DE69802038 T DE 69802038T DE 69802038 T2 DE69802038 T2 DE 69802038T2
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69802038T
Other languages
English (en)
Other versions
DE69802038D1 (de
Inventor
Isao Nishimura
Masayuki Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE69802038D1 publication Critical patent/DE69802038D1/de
Publication of DE69802038T2 publication Critical patent/DE69802038T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
DE69802038T 1997-05-22 1998-05-20 Strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE69802038T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13194897A JP3650985B2 (ja) 1997-05-22 1997-05-22 ネガ型感放射線性樹脂組成物およびパターン製造法

Publications (2)

Publication Number Publication Date
DE69802038D1 DE69802038D1 (de) 2001-11-22
DE69802038T2 true DE69802038T2 (de) 2002-06-20

Family

ID=15069961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802038T Expired - Lifetime DE69802038T2 (de) 1997-05-22 1998-05-20 Strahlungsempfindliche Harzzusammensetzung

Country Status (5)

Country Link
US (1) US5958648A (de)
EP (1) EP0880075B1 (de)
JP (1) JP3650985B2 (de)
KR (1) KR100527012B1 (de)
DE (1) DE69802038T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69905959T2 (de) * 1998-04-06 2003-12-04 Fuji Photo Film Co Ltd Lichtempfindliche Harzzusammensetzung
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
AU6056099A (en) 1998-09-23 2000-04-10 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
JP2000347397A (ja) 1999-06-04 2000-12-15 Jsr Corp 感放射線性樹脂組成物およびその層間絶縁膜への使用
JP2002006501A (ja) * 1999-11-09 2002-01-09 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物
TW527522B (en) * 1999-11-09 2003-04-11 Sumitomo Chemical Co Chemical amplification type resist composition
TW553959B (en) * 2000-02-16 2003-09-21 Shinetsu Chemical Co Polymeric compound, resist material and pattern-forming method
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
US7122288B2 (en) * 2000-03-28 2006-10-17 Fujitsu Limited Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device
AU2001244719A1 (en) 2000-04-04 2001-10-15 Daikin Industries Ltd. Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same
AUPQ700100A0 (en) * 2000-04-18 2000-05-11 Orbital Engine Company (Australia) Proprietary Limited Engine speed control for internal combustion engines
US6756165B2 (en) 2000-04-25 2004-06-29 Jsr Corporation Radiation sensitive resin composition for forming barrier ribs for an EL display element, barrier rib and EL display element
KR100596873B1 (ko) * 2000-07-13 2006-07-04 주식회사 하이닉스반도체 Ｔｉｐｓ용 포토레지스트 조성물
CN1273869C (zh) * 2000-08-29 2006-09-06 捷时雅株式会社 有放射线敏感性的折射率变化性组合物，及其光学制品
JP4373624B2 (ja) * 2000-09-04 2009-11-25 富士フイルム株式会社 感熱性組成物、それを用いた平版印刷版原版及びスルホニウム塩化合物
JP4042142B2 (ja) 2000-09-08 2008-02-06 Ｊｓｒ株式会社 Ｅｌ表示素子の隔壁形成用感放射線性樹脂組成物、隔壁およびｅｌ表示素子
KR100789583B1 (ko) * 2000-12-11 2007-12-28 제이에스알 가부시끼가이샤 감방사선성 굴절율 변화성 조성물 및 굴절율 변화법
US6730452B2 (en) * 2001-01-26 2004-05-04 International Business Machines Corporation Lithographic photoresist composition and process for its use
US6548219B2 (en) * 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
US6509134B2 (en) * 2001-01-26 2003-01-21 International Business Machines Corporation Norbornene fluoroacrylate copolymers and process for the use thereof
CN1225509C (zh) * 2001-02-19 2005-11-02 捷时雅株式会社 感放射线性折射率变化性组合物
EP1375597A4 (de) * 2001-03-13 2004-05-26 Jsr Corp Strahlungsempfindliche zusammensetzung mit veränderlichem brechungsindex sowie deren verwendung
JP2005509177A (ja) * 2001-03-22 2005-04-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 短波長像形成用フォトレジスト組成物
JP2003043682A (ja) 2001-08-01 2003-02-13 Jsr Corp 感放射線性誘電率変化性組成物、誘電率変化法
JP2003082042A (ja) * 2001-09-07 2003-03-19 Jsr Corp 隔壁形成用感放射線性樹脂組成物、隔壁、および表示素子。
BR8300869U (pt) * 2003-06-18 2003-11-25 Techinvest Ltda Dispositivo introduzida em demarcador receptor-emissor oculto de pneumáticos e similares
US20060246371A1 (en) * 2003-07-09 2006-11-02 Akira Nishikawa Photosensitive fluororesin composition, cured film obtained from the composition, and method of forming pattern
JP4424246B2 (ja) * 2004-10-28 2010-03-03 旭硝子株式会社 含フッ素共重合体及びその用途
WO2006099380A2 (en) * 2005-03-11 2006-09-21 E.I. Dupont De Nemours And Company Photoimageable, thermosettable fluorinated resists
KR100640643B1 (ko) * 2005-06-04 2006-10-31 삼성전자주식회사 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
KR101290855B1 (ko) * 2005-07-27 2013-07-29 제이에스알 가부시끼가이샤 측쇄 불포화 중합체, 감방사선성 수지 조성물 및 액정 표시소자용 스페이서
JP4566861B2 (ja) * 2005-08-23 2010-10-20 富士通株式会社 レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法
JP4677871B2 (ja) * 2005-10-03 2011-04-27 Ｊｓｒ株式会社 感放射線性樹脂組成物ならびに層間絶縁膜およびマイクロレンズの形成
KR100718108B1 (ko) * 2005-10-07 2007-05-14 삼성에스디아이 주식회사 고분자 전해질막, 그 제조방법 및 이를 이용한 연료전지
JP5117002B2 (ja) * 2006-07-10 2013-01-09 富士フイルム株式会社 光硬化性組成物およびそれを用いたパターン形成方法
KR20080057562A (ko) * 2006-12-20 2008-06-25 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
WO2010150748A1 (ja) * 2009-06-23 2010-12-29 日産化学工業株式会社 光配向性を有する熱硬化膜形成組成物
KR102433038B1 (ko) * 2014-06-03 2022-08-18 더 케무어스 컴퍼니 에프씨, 엘엘씨 광가교결합된 플루오로중합체를 포함하는 패시베이션 층
JP6368558B2 (ja) * 2014-06-25 2018-08-01 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び高分子化合物
EP3683854A4 (de) * 2017-09-29 2020-10-28 LG Chem, Ltd. Verfahren zur verkapselung eines organischen elektronischen elements

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083032A (ja) * 1983-10-13 1985-05-11 Asahi Chem Ind Co Ltd 光透過性に優れたフオトマスク用防塵カバ−
JPH01241557A (ja) * 1988-03-22 1989-09-26 Bando Chem Ind Ltd ペリクル膜
US4963471A (en) * 1989-07-14 1990-10-16 E. I. Du Pont De Nemours And Company Holographic photopolymer compositions and elements for refractive index imaging
JPH03103410A (ja) * 1989-09-18 1991-04-30 Dainippon Ink & Chem Inc 水酸基含有含ふっ素共重合体の製造方法
CA2033821A1 (en) * 1990-01-12 1991-07-13 Evan D. Laganis Photopolymerizable compositions sensitive to longer wavelength visible actinic radiation
JP2893875B2 (ja) * 1990-06-20 1999-05-24 ジェイエスアール株式会社 保護膜形成用材料
JPH07110890B2 (ja) * 1990-06-29 1995-11-29 ダイキン工業株式会社 含フッ素共重合体およびそれを用いた塗料用組成物
JP2933145B2 (ja) * 1991-05-23 1999-08-09 日本化薬株式会社 カラ−フイルタ−保護膜用紫外線硬化性樹脂組成物及びその硬化物
US5362597A (en) * 1991-05-30 1994-11-08 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester
DE4207264B4 (de) * 1992-03-07 2005-07-28 Clariant Gmbh Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
US5399604A (en) * 1992-07-24 1995-03-21 Japan Synthetic Rubber Co., Ltd. Epoxy group-containing resin compositions
JP3114166B2 (ja) * 1992-10-22 2000-12-04 ジェイエスアール株式会社 マイクロレンズ用感放射線性樹脂組成物
KR940010594A (ko) * 1992-10-29 1994-05-26 백중영 키폰전화기의 착신링신호 음량자동조정장치
JP3562599B2 (ja) * 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物

Also Published As

Publication number Publication date
JP3650985B2 (ja) 2005-05-25
JPH10319593A (ja) 1998-12-04
US5958648A (en) 1999-09-28
EP0880075B1 (de) 2001-10-17
KR19980087250A (ko) 1998-12-05
EP0880075A1 (de) 1998-11-25
DE69802038D1 (de) 2001-11-22
KR100527012B1 (ko) 2006-02-28

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