DE69827211D1 - Strahlungsempfindliche Harzzusammensetzung - Google Patents

Strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE69827211D1
DE69827211D1 DE69827211T DE69827211T DE69827211D1 DE 69827211 D1 DE69827211 D1 DE 69827211D1 DE 69827211 T DE69827211 T DE 69827211T DE 69827211 T DE69827211 T DE 69827211T DE 69827211 D1 DE69827211 D1 DE 69827211D1
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69827211T
Other languages
English (en)
Other versions
DE69827211T2 (de
Inventor
Shin-Ichiro Iwanaga
Eiichi Kobayashi
Takayoshi Tanabe
Kazuo Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE69827211D1 publication Critical patent/DE69827211D1/de
Publication of DE69827211T2 publication Critical patent/DE69827211T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
DE69827211T 1997-09-02 1998-08-21 Strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE69827211T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25144997 1997-09-02
JP25144997 1997-09-02

Publications (2)

Publication Number Publication Date
DE69827211D1 true DE69827211D1 (de) 2004-12-02
DE69827211T2 DE69827211T2 (de) 2006-02-02

Family

ID=17223002

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69827211T Expired - Lifetime DE69827211T2 (de) 1997-09-02 1998-08-21 Strahlungsempfindliche Harzzusammensetzung

Country Status (4)

Country Link
US (1) US6120972A (de)
EP (1) EP0901043B1 (de)
KR (1) KR100591651B1 (de)
DE (1) DE69827211T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3761322B2 (ja) * 1998-04-23 2006-03-29 東京応化工業株式会社 化学増幅型ポジ型ホトレジスト
US7208260B2 (en) * 1998-12-31 2007-04-24 Hynix Semiconductor Inc. Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
TWI263866B (en) * 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
KR100520183B1 (ko) * 1999-08-23 2005-10-10 주식회사 하이닉스반도체 두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체
US6818376B2 (en) 1999-08-23 2004-11-16 Hynix Semiconductor Inc. Cross-linker monomer comprising double bond and photoresist copolymer containing the same
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
US6783914B1 (en) * 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
US6630282B2 (en) 2000-08-21 2003-10-07 Tokyo Ohka Kogyo Co., Ltd. Crosslinked positive-working photoresist composition
US6828078B2 (en) * 2000-08-29 2004-12-07 Jsr Corporation Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern
WO2002051721A1 (fr) * 2000-12-27 2002-07-04 Hitachi Chemical Co., Ltd. Procede d'emballage de rouleau de film photosensible, boitier de resine destine a ce procede d'emballage, procede de recuperation et de reutilisation de ce boitier, et matiere d'emballage et procede de transport pour rouleau de film photosensible
JP3988517B2 (ja) * 2001-04-27 2007-10-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
DE10137100B4 (de) * 2001-07-30 2005-07-07 Infineon Technologies Ag Transparenzverbesserung von Resist-Copolymeren für die 157 nm-Fotolithografie durch Einsatz von fluorierten Zimtsäurederivaten
JP2005053936A (ja) * 2003-06-13 2005-03-03 Jsr Corp 光硬化性液状樹脂組成物
KR20070116191A (ko) * 2004-03-30 2007-12-06 토요 어드밴스드 테크놀로지스 컴퍼니 리미티드 기재의 표면처리방법, 의료용 재료, 의료용 기구
KR101266564B1 (ko) * 2005-08-03 2013-05-22 제이에스알 가부시끼가이샤 도금 조형물 제조용 포지티브형 감방사선성 수지 조성물,전사 필름 및 도금 조형물의 제조 방법
TWI512402B (zh) * 2005-11-25 2015-12-11 Jsr Corp Sensitive radiation linear resin composition
JP4937594B2 (ja) * 2006-02-02 2012-05-23 東京応化工業株式会社 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227978A (en) * 1979-06-27 1980-10-14 Minnesota Mining And Manufacturing Company Photohardenable composition
JP2578646B2 (ja) * 1988-07-18 1997-02-05 三洋電機株式会社 非水系二次電池
JPH02161436A (ja) * 1988-12-15 1990-06-21 Oki Electric Ind Co Ltd フォトレジスト組成物及びその使用方法
EP0422628A3 (en) * 1989-10-13 1992-02-26 E.I. Du Pont De Nemours And Company Photosensitive element
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
JP3126607B2 (ja) * 1994-11-16 2001-01-22 株式会社東芝 化学増幅型スラーリー感光性組成物
US5585220A (en) * 1995-12-01 1996-12-17 International Business Machines Corporation Resist composition with radiation sensitive acid generator

Also Published As

Publication number Publication date
KR100591651B1 (ko) 2007-01-31
DE69827211T2 (de) 2006-02-02
EP0901043A1 (de) 1999-03-10
EP0901043B1 (de) 2004-10-27
US6120972A (en) 2000-09-19
KR19990029414A (ko) 1999-04-26

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