DE69506999D1 - Strahlungsempfindliche Zusammensetzung - Google Patents

Strahlungsempfindliche Zusammensetzung

Info

Publication number
DE69506999D1
DE69506999D1 DE69506999T DE69506999T DE69506999D1 DE 69506999 D1 DE69506999 D1 DE 69506999D1 DE 69506999 T DE69506999 T DE 69506999T DE 69506999 T DE69506999 T DE 69506999T DE 69506999 D1 DE69506999 D1 DE 69506999D1
Authority
DE
Germany
Prior art keywords
radiation sensitive
sensitive composition
composition
radiation
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69506999T
Other languages
English (en)
Other versions
DE69506999T2 (de
Inventor
Munirathna Padmanaban
Natsumi Suehiro
Yoshiaki Kinoshita
Satoru Funato
Seiya Masuda
Hiroshi Okazaki
Georg Pawlowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69506999D1 publication Critical patent/DE69506999D1/de
Publication of DE69506999T2 publication Critical patent/DE69506999T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69506999T 1994-11-02 1995-11-02 Strahlungsempfindliche Zusammensetzung Expired - Lifetime DE69506999T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26957994A JP3549592B2 (ja) 1994-11-02 1994-11-02 放射線感応性組成物

Publications (2)

Publication Number Publication Date
DE69506999D1 true DE69506999D1 (de) 1999-02-11
DE69506999T2 DE69506999T2 (de) 1999-08-19

Family

ID=17474336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506999T Expired - Lifetime DE69506999T2 (de) 1994-11-02 1995-11-02 Strahlungsempfindliche Zusammensetzung

Country Status (6)

Country Link
US (1) US5738972A (de)
EP (1) EP0710885B1 (de)
JP (1) JP3549592B2 (de)
KR (1) KR100383471B1 (de)
DE (1) DE69506999T2 (de)
TW (1) TW284860B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262720A (ja) * 1995-03-28 1996-10-11 Hoechst Ind Kk 可塑剤を含む放射線感応性組成物
JPH0954437A (ja) * 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JPH09325496A (ja) * 1996-06-04 1997-12-16 Sony Corp 感光性組成物
JP3679205B2 (ja) * 1996-09-20 2005-08-03 富士写真フイルム株式会社 ポジ型感光性組成物
JP3873372B2 (ja) * 1997-05-26 2007-01-24 住友化学株式会社 ポジ型フォトレジスト組成物
JP3052917B2 (ja) * 1997-10-24 2000-06-19 日本電気株式会社 化学増幅系レジスト
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
KR100596125B1 (ko) * 1998-12-22 2006-07-05 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
KR20010112227A (ko) * 1999-10-07 2001-12-20 데머 얀, 당코 제니아 떼. 감광성 조성물
JP4272805B2 (ja) * 1999-12-27 2009-06-03 富士フイルム株式会社 ポジ型感放射線性組成物
JP4562240B2 (ja) * 2000-05-10 2010-10-13 富士フイルム株式会社 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
EP1179750B1 (de) 2000-08-08 2012-07-25 FUJIFILM Corporation Positiv arbeitende lichtempfindliche Zusammensetzung und Verfahren zur Herstellung einer integrierten Präzisions-Schaltung mit derselben
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
DE10243742B4 (de) * 2002-09-20 2007-11-08 Qimonda Ag Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists
DE10243745A1 (de) * 2002-09-20 2004-04-15 Infineon Technologies Ag Hochempfindlicher und hochauflösender Fotoresist für die Ionenprojektions-Lithographie
KR20080026066A (ko) 2006-09-19 2008-03-24 후지필름 가부시키가이샤 감광성 조성물, 감광성 조성물에 사용하는 화합물 및감광성 조성물을 사용한 패턴형성방법
KR100913058B1 (ko) * 2008-08-25 2009-08-20 금호석유화학 주식회사 포지티브형 감광성 수지 조성물, 패턴 형성 방법 및 반도체소자
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
US8932796B2 (en) * 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
US9921480B2 (en) * 2016-02-10 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd Extreme ultraviolet photoresist

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0307751A3 (de) * 1987-09-16 1990-05-16 Hoechst Aktiengesellschaft 3-Mono- und 3,5-disubstituierte-4-Acetoxy und -4-Hydroxystyrole und ein Verfahren zu ihrer Herstellung
EP0307752B1 (de) * 1987-09-16 1995-02-22 Hoechst Aktiengesellschaft Poly(3-mono oder 3,5-disubstituierte acetoxystyrole) und deren Verwendung
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JPH0450851A (ja) * 1990-06-14 1992-02-19 Sumitomo Chem Co Ltd ポジ型感放射線性レジスト組成物
DE4120173A1 (de) * 1991-06-19 1992-12-24 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
EP0537524A1 (de) * 1991-10-17 1993-04-21 Shipley Company Inc. Strahlungsempfindliche Zusammensetzungen und Verfahren
DE4222968A1 (de) * 1992-07-13 1994-01-20 Hoechst Ag Positiv-arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
KR100355254B1 (en) * 1993-02-15 2003-03-31 Clariant Finance Bvi Ltd Positive type radiation-sensitive mixture
JP3573358B2 (ja) * 1994-02-25 2004-10-06 クラリアント インターナショナル リミテッド 放射線感応性組成物
JPH08110635A (ja) * 1994-10-07 1996-04-30 Shin Etsu Chem Co Ltd 化学増幅ポジ型レジスト材料

Also Published As

Publication number Publication date
US5738972A (en) 1998-04-14
KR100383471B1 (ko) 2003-08-21
TW284860B (de) 1996-09-01
JP3549592B2 (ja) 2004-08-04
DE69506999T2 (de) 1999-08-19
KR960018762A (ko) 1996-06-17
JPH08129260A (ja) 1996-05-21
EP0710885B1 (de) 1998-12-30
EP0710885A1 (de) 1996-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP., SOMERVILLE, N.J

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU