DE69813113D1 - Strahlungsempfindliche Harzzusammensetzung - Google Patents

Strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE69813113D1
DE69813113D1 DE69813113T DE69813113T DE69813113D1 DE 69813113 D1 DE69813113 D1 DE 69813113D1 DE 69813113 T DE69813113 T DE 69813113T DE 69813113 T DE69813113 T DE 69813113T DE 69813113 D1 DE69813113 D1 DE 69813113D1
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69813113T
Other languages
English (en)
Other versions
DE69813113T2 (de
Inventor
Eiichi Kobayashi
Makoto Shimizu
Takayoshi Tanabe
Shin-Ichiro Iwanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE69813113D1 publication Critical patent/DE69813113D1/de
Application granted granted Critical
Publication of DE69813113T2 publication Critical patent/DE69813113T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
DE69813113T 1997-08-18 1998-08-18 Strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE69813113T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23549597 1997-08-18

Publications (2)

Publication Number Publication Date
DE69813113D1 true DE69813113D1 (de) 2003-05-15
DE69813113T2 DE69813113T2 (de) 2003-11-06

Family

ID=16986888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813113T Expired - Lifetime DE69813113T2 (de) 1997-08-18 1998-08-18 Strahlungsempfindliche Harzzusammensetzung

Country Status (4)

Country Link
US (1) US6136500A (de)
EP (1) EP0898201B1 (de)
KR (1) KR100551653B1 (de)
DE (1) DE69813113T2 (de)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0928287B1 (de) * 1997-07-25 2003-10-01 Acep Inc. Ionische verbindungen mit delokalisierter anionischer ladung, ihrer verwendung als komponenten von ionenleitern oder von katalysatoren
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP3638086B2 (ja) * 1998-08-21 2005-04-13 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
US6280911B1 (en) * 1998-09-10 2001-08-28 Shipley Company, L.L.C. Photoresist compositions comprising blends of ionic and non-ionic photoacid generators
KR20000023292A (ko) * 1998-09-22 2000-04-25 카나가와 치히로 레지스트 재료 및 패턴 형성 방법
US6200728B1 (en) 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
JP4019403B2 (ja) * 1999-03-08 2007-12-12 Ｊｓｒ株式会社 レジストパターンの形成方法
KR20010011766A (ko) * 1999-07-30 2001-02-15 김영환 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한 포토레지스트 조성물
TW500976B (en) * 1999-08-25 2002-09-01 Tokyo Ohka Kogyo Co Ltd Multilayered body for photolithographic patterning
EP1211271B1 (de) 1999-09-03 2005-12-21 Nippon Soda Co., Ltd. Alkenylphenolcopolymer und verfahren zu dessen herstellung
WO2001018084A1 (fr) * 1999-09-08 2001-03-15 Nippon Soda Co., Ltd. Copolymere alcenylphenolique de type a-b-a
CN1150169C (zh) 1999-09-20 2004-05-19 日本曹达株式会社 4(5)-氨基-5(4)-氨基甲酰基咪唑及其中间体的制备方法
US6365322B1 (en) * 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
US6723483B1 (en) * 1999-12-27 2004-04-20 Wako Pure Chemical Industries, Ltd. Sulfonium salt compounds
US6727036B2 (en) * 1999-12-27 2004-04-27 Fuji Photo Film Co., Ltd. Positive-working radiation-sensitive composition
JP4070393B2 (ja) 2000-01-17 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
EP1179750B1 (de) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positiv arbeitende lichtempfindliche Zusammensetzung und Verfahren zur Herstellung einer integrierten Präzisions-Schaltung mit derselben
JP4253427B2 (ja) * 2000-09-19 2009-04-15 富士フイルム株式会社 ポジ型レジスト組成物
KR100557615B1 (ko) * 2000-10-23 2006-03-10 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 조성물
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4092083B2 (ja) * 2001-03-21 2008-05-28 富士フイルム株式会社 電子線又はｘ線用ネガ型レジスト組成物
JP4417627B2 (ja) 2001-03-30 2010-02-17 ジ・アリゾナ・ボード・オブ・リージェンツ・オン・ビハーフ・オブ・ザ・ユニバーシティー・オブ・アリゾナ 酸および／またはラジカル種を光化学生成するための物質、方法、および使用
JP2003107707A (ja) * 2001-09-28 2003-04-09 Clariant (Japan) Kk 化学増幅型ポジ型感放射線性樹脂組成物
US7214465B2 (en) * 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
US7160666B2 (en) * 2002-03-06 2007-01-09 Fuji Photo Film Co., Ltd. Photosensitive resin composition
TWI262359B (en) * 2002-03-28 2006-09-21 Sumitomo Chemical Co Positive type chemical amplification resist composition
US20040053160A1 (en) * 2002-07-04 2004-03-18 Fuji Photo Film Co., Ltd. Resist composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
JP2005215112A (ja) * 2004-01-28 2005-08-11 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物、および、レジストパターン形成方法
DE602005003475T2 (de) * 2004-07-16 2008-09-25 Dow Corning Corp., Midland Strahlungsempfindliche silikonharzzusammensetzung
EP1686424A3 (de) * 2005-01-27 2009-11-04 JSR Corporation Strahlungsempfindliche Harzzusammensetzung
TWI512402B (zh) * 2005-11-25 2015-12-11 Jsr Corp Sensitive radiation linear resin composition
US7932334B2 (en) * 2005-12-27 2011-04-26 Sumitomo Chemical Company, Limited Resin suitable for an acid generator
JP2007293250A (ja) 2006-03-27 2007-11-08 Fujifilm Corp ポジ型レジスト組成物およびそれを用いたパターン形成方法
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
JP5660037B2 (ja) 2009-05-18 2015-01-28 Jsr株式会社 感放射線性樹脂組成物
TW201106101A (en) * 2009-06-01 2011-02-16 Fujifilm Electronic Materials Chemically amplified positive photoresist composition
JP5658932B2 (ja) * 2009-07-14 2015-01-28 住友化学株式会社 新規化合物、レジスト組成物及びパターン形成方法
JP5580674B2 (ja) * 2009-07-14 2014-08-27 住友化学株式会社 新規化合物、レジスト組成物及びパターン形成方法
US20120040288A1 (en) * 2010-08-11 2012-02-16 Microchem Corp. Epoxy formulations with controllable photospeed
JP5910361B2 (ja) 2011-07-14 2016-04-27 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5835148B2 (ja) 2011-08-26 2015-12-24 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5780222B2 (ja) 2011-09-16 2015-09-16 信越化学工業株式会社 パターン形成方法
JP5807510B2 (ja) 2011-10-27 2015-11-10 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5675664B2 (ja) 2012-01-24 2015-02-25 信越化学工業株式会社 パターン形成方法
JP6115322B2 (ja) 2012-06-19 2017-04-19 信越化学工業株式会社 パターン形成方法
JP5846061B2 (ja) 2012-07-09 2016-01-20 信越化学工業株式会社 パターン形成方法
JP5737242B2 (ja) 2012-08-10 2015-06-17 信越化学工業株式会社 単量体、高分子化合物、レジスト組成物及びパターン形成方法
JP5780221B2 (ja) 2012-08-20 2015-09-16 信越化学工業株式会社 パターン形成方法
JP5780246B2 (ja) 2013-01-16 2015-09-16 信越化学工業株式会社 パターン形成方法
JP6127989B2 (ja) 2013-02-14 2017-05-17 信越化学工業株式会社 パターン形成方法
JP5794243B2 (ja) 2013-02-18 2015-10-14 信越化学工業株式会社 パターン形成方法
JP5842841B2 (ja) 2013-02-18 2016-01-13 信越化学工業株式会社 パターン形成方法
JP6065862B2 (ja) 2013-04-10 2017-01-25 信越化学工業株式会社 パターン形成方法、レジスト組成物、高分子化合物及び単量体
US9164384B2 (en) 2013-04-26 2015-10-20 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
JP6119667B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6119669B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6119668B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP5904180B2 (ja) 2013-09-11 2016-04-13 信越化学工業株式会社 スルホニウム塩、化学増幅型レジスト組成物、及びパターン形成方法
JP6233240B2 (ja) 2013-09-26 2017-11-22 信越化学工業株式会社 パターン形成方法
KR102227564B1 (ko) * 2014-01-20 2021-03-15 삼성디스플레이 주식회사 포토레지스트 조성물
JP6059675B2 (ja) * 2014-03-24 2017-01-11 信越化学工業株式会社 化学増幅型ネガ型レジスト組成物及びレジストパターン形成方法
JP6459759B2 (ja) 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6237551B2 (ja) 2014-09-18 2017-11-29 信越化学工業株式会社 レジスト組成物及びパターン形成方法
EP3032333B1 (de) 2014-12-08 2017-05-24 Shin-Etsu Chemical Co., Ltd. Schrumpfmaterial und musterbildungsverfahren
JP6663677B2 (ja) * 2015-10-06 2020-03-13 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法、並びに、化合物及び酸拡散制御剤
JP6886113B2 (ja) 2015-12-01 2021-06-16 Jsr株式会社 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤
KR102638582B1 (ko) 2016-01-13 2024-02-21 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 산 확산 제어제
JP6583126B2 (ja) 2016-04-28 2019-10-02 信越化学工業株式会社 新規カルボン酸オニウム塩、化学増幅レジスト組成物、及びパターン形成方法
WO2018043506A1 (ja) 2016-08-29 2018-03-08 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP2020160318A (ja) * 2019-03-27 2020-10-01 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 厚膜レジスト組成物およびそれを用いたレジスト膜の製造方法
JP7484846B2 (ja) * 2020-09-28 2024-05-16 信越化学工業株式会社 分子レジスト組成物及びパターン形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027660A (ja) * 1987-10-30 1990-01-11 Kyocera Corp 光プリンタヘッドを用いた画像形成方法
JPH02161436A (ja) * 1988-12-15 1990-06-21 Oki Electric Ind Co Ltd フォトレジスト組成物及びその使用方法
JPH0344290A (ja) * 1989-07-12 1991-02-26 Fujitsu Ltd チップパーティ接地送出方法
DE4003025A1 (de) * 1990-02-02 1991-08-08 Hoechst Ag Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
DE4323289A1 (de) * 1993-07-12 1995-01-19 Siemens Ag Strahlungsempfindliche Lackzusammensetzung
US5663035A (en) * 1994-04-13 1997-09-02 Hoechst Japan Limited Radiation-sensitive mixture comprising a basic iodonium compound
JPH08320554A (ja) * 1995-05-24 1996-12-03 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JPH0943834A (ja) * 1995-08-01 1997-02-14 Nippon Sheet Glass Co Ltd セルフパターニング方法

Also Published As

Publication number Publication date
KR19990023645A (ko) 1999-03-25
DE69813113T2 (de) 2003-11-06
KR100551653B1 (ko) 2006-05-25
EP0898201A1 (de) 1999-02-24
EP0898201B1 (de) 2003-04-09
US6136500A (en) 2000-10-24

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