DE69813113T2 - Strahlungsempfindliche Harzzusammensetzung - Google Patents
Strahlungsempfindliche HarzzusammensetzungInfo
- Publication number
- DE69813113T2 DE69813113T2 DE69813113T DE69813113T DE69813113T2 DE 69813113 T2 DE69813113 T2 DE 69813113T2 DE 69813113 T DE69813113 T DE 69813113T DE 69813113 T DE69813113 T DE 69813113T DE 69813113 T2 DE69813113 T2 DE 69813113T2
- Authority
- DE
- Germany
- Prior art keywords
- resin composition
- sensitive resin
- radiation sensitive
- radiation
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23549597 | 1997-08-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69813113D1 DE69813113D1 (de) | 2003-05-15 |
DE69813113T2 true DE69813113T2 (de) | 2003-11-06 |
Family
ID=16986888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69813113T Expired - Lifetime DE69813113T2 (de) | 1997-08-18 | 1998-08-18 | Strahlungsempfindliche Harzzusammensetzung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6136500A (de) |
EP (1) | EP0898201B1 (de) |
KR (1) | KR100551653B1 (de) |
DE (1) | DE69813113T2 (de) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0928287B1 (de) * | 1997-07-25 | 2003-10-01 | Acep Inc. | Ionische verbindungen mit delokalisierter anionischer ladung, ihrer verwendung als komponenten von ionenleitern oder von katalysatoren |
JP3955384B2 (ja) * | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
JP3638086B2 (ja) * | 1998-08-21 | 2005-04-13 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
US6280911B1 (en) * | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
KR20000023292A (ko) * | 1998-09-22 | 2000-04-25 | 카나가와 치히로 | 레지스트 재료 및 패턴 형성 방법 |
US6200728B1 (en) | 1999-02-20 | 2001-03-13 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of photoacid generators |
JP4019403B2 (ja) * | 1999-03-08 | 2007-12-12 | Jsr株式会社 | レジストパターンの形成方法 |
KR20010011766A (ko) * | 1999-07-30 | 2001-02-15 | 김영환 | 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한 포토레지스트 조성물 |
TW500976B (en) * | 1999-08-25 | 2002-09-01 | Tokyo Ohka Kogyo Co Ltd | Multilayered body for photolithographic patterning |
EP1211271B1 (de) | 1999-09-03 | 2005-12-21 | Nippon Soda Co., Ltd. | Alkenylphenolcopolymer und verfahren zu dessen herstellung |
WO2001018084A1 (fr) * | 1999-09-08 | 2001-03-15 | Nippon Soda Co., Ltd. | Copolymere alcenylphenolique de type a-b-a |
CN1150169C (zh) | 1999-09-20 | 2004-05-19 | 日本曹达株式会社 | 4(5)-氨基-5(4)-氨基甲酰基咪唑及其中间体的制备方法 |
US6365322B1 (en) * | 1999-12-07 | 2002-04-02 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV radiation |
US6723483B1 (en) * | 1999-12-27 | 2004-04-20 | Wako Pure Chemical Industries, Ltd. | Sulfonium salt compounds |
US6727036B2 (en) * | 1999-12-27 | 2004-04-27 | Fuji Photo Film Co., Ltd. | Positive-working radiation-sensitive composition |
JP4070393B2 (ja) | 2000-01-17 | 2008-04-02 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
EP1179750B1 (de) * | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positiv arbeitende lichtempfindliche Zusammensetzung und Verfahren zur Herstellung einer integrierten Präzisions-Schaltung mit derselben |
JP4253427B2 (ja) * | 2000-09-19 | 2009-04-15 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
KR100557615B1 (ko) * | 2000-10-23 | 2006-03-10 | 주식회사 하이닉스반도체 | 레지스트 플로우 공정용 포토레지스트 조성물 |
JP4438218B2 (ja) * | 2000-11-16 | 2010-03-24 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP4092083B2 (ja) * | 2001-03-21 | 2008-05-28 | 富士フイルム株式会社 | 電子線又はx線用ネガ型レジスト組成物 |
JP4417627B2 (ja) | 2001-03-30 | 2010-02-17 | ジ・アリゾナ・ボード・オブ・リージェンツ・オン・ビハーフ・オブ・ザ・ユニバーシティー・オブ・アリゾナ | 酸および/またはラジカル種を光化学生成するための物質、方法、および使用 |
JP2003107707A (ja) * | 2001-09-28 | 2003-04-09 | Clariant (Japan) Kk | 化学増幅型ポジ型感放射線性樹脂組成物 |
US7214465B2 (en) * | 2002-01-10 | 2007-05-08 | Fujifilm Corporation | Positive photosensitive composition |
US7521168B2 (en) * | 2002-02-13 | 2009-04-21 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
US7160666B2 (en) * | 2002-03-06 | 2007-01-09 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
TWI262359B (en) * | 2002-03-28 | 2006-09-21 | Sumitomo Chemical Co | Positive type chemical amplification resist composition |
US20040053160A1 (en) * | 2002-07-04 | 2004-03-18 | Fuji Photo Film Co., Ltd. | Resist composition |
JP3937996B2 (ja) * | 2002-10-08 | 2007-06-27 | Jsr株式会社 | 感放射性樹脂組成物 |
JP2005215112A (ja) * | 2004-01-28 | 2005-08-11 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト組成物、および、レジストパターン形成方法 |
DE602005003475T2 (de) * | 2004-07-16 | 2008-09-25 | Dow Corning Corp., Midland | Strahlungsempfindliche silikonharzzusammensetzung |
EP1686424A3 (de) * | 2005-01-27 | 2009-11-04 | JSR Corporation | Strahlungsempfindliche Harzzusammensetzung |
TWI512402B (zh) * | 2005-11-25 | 2015-12-11 | Jsr Corp | Sensitive radiation linear resin composition |
US7932334B2 (en) * | 2005-12-27 | 2011-04-26 | Sumitomo Chemical Company, Limited | Resin suitable for an acid generator |
JP2007293250A (ja) | 2006-03-27 | 2007-11-08 | Fujifilm Corp | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
JP5660037B2 (ja) | 2009-05-18 | 2015-01-28 | Jsr株式会社 | 感放射線性樹脂組成物 |
TW201106101A (en) * | 2009-06-01 | 2011-02-16 | Fujifilm Electronic Materials | Chemically amplified positive photoresist composition |
JP5658932B2 (ja) * | 2009-07-14 | 2015-01-28 | 住友化学株式会社 | 新規化合物、レジスト組成物及びパターン形成方法 |
JP5580674B2 (ja) * | 2009-07-14 | 2014-08-27 | 住友化学株式会社 | 新規化合物、レジスト組成物及びパターン形成方法 |
US20120040288A1 (en) * | 2010-08-11 | 2012-02-16 | Microchem Corp. | Epoxy formulations with controllable photospeed |
JP5910361B2 (ja) | 2011-07-14 | 2016-04-27 | 信越化学工業株式会社 | パターン形成方法及びレジスト組成物 |
JP5835148B2 (ja) | 2011-08-26 | 2015-12-24 | 信越化学工業株式会社 | パターン形成方法及びレジスト組成物 |
JP5780222B2 (ja) | 2011-09-16 | 2015-09-16 | 信越化学工業株式会社 | パターン形成方法 |
JP5807510B2 (ja) | 2011-10-27 | 2015-11-10 | 信越化学工業株式会社 | パターン形成方法及びレジスト組成物 |
JP5675664B2 (ja) | 2012-01-24 | 2015-02-25 | 信越化学工業株式会社 | パターン形成方法 |
JP6115322B2 (ja) | 2012-06-19 | 2017-04-19 | 信越化学工業株式会社 | パターン形成方法 |
JP5846061B2 (ja) | 2012-07-09 | 2016-01-20 | 信越化学工業株式会社 | パターン形成方法 |
JP5737242B2 (ja) | 2012-08-10 | 2015-06-17 | 信越化学工業株式会社 | 単量体、高分子化合物、レジスト組成物及びパターン形成方法 |
JP5780221B2 (ja) | 2012-08-20 | 2015-09-16 | 信越化学工業株式会社 | パターン形成方法 |
JP5780246B2 (ja) | 2013-01-16 | 2015-09-16 | 信越化学工業株式会社 | パターン形成方法 |
JP6127989B2 (ja) | 2013-02-14 | 2017-05-17 | 信越化学工業株式会社 | パターン形成方法 |
JP5794243B2 (ja) | 2013-02-18 | 2015-10-14 | 信越化学工業株式会社 | パターン形成方法 |
JP5842841B2 (ja) | 2013-02-18 | 2016-01-13 | 信越化学工業株式会社 | パターン形成方法 |
JP6065862B2 (ja) | 2013-04-10 | 2017-01-25 | 信越化学工業株式会社 | パターン形成方法、レジスト組成物、高分子化合物及び単量体 |
US9164384B2 (en) | 2013-04-26 | 2015-10-20 | Shin-Etsu Chemical Co., Ltd. | Patterning process and resist composition |
JP6119667B2 (ja) | 2013-06-11 | 2017-04-26 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
JP6119669B2 (ja) | 2013-06-11 | 2017-04-26 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
JP6119668B2 (ja) | 2013-06-11 | 2017-04-26 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
JP5904180B2 (ja) | 2013-09-11 | 2016-04-13 | 信越化学工業株式会社 | スルホニウム塩、化学増幅型レジスト組成物、及びパターン形成方法 |
JP6233240B2 (ja) | 2013-09-26 | 2017-11-22 | 信越化学工業株式会社 | パターン形成方法 |
KR102227564B1 (ko) * | 2014-01-20 | 2021-03-15 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 |
JP6059675B2 (ja) * | 2014-03-24 | 2017-01-11 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト組成物及びレジストパターン形成方法 |
JP6459759B2 (ja) | 2014-05-26 | 2019-01-30 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
JP6237551B2 (ja) | 2014-09-18 | 2017-11-29 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
EP3032333B1 (de) | 2014-12-08 | 2017-05-24 | Shin-Etsu Chemical Co., Ltd. | Schrumpfmaterial und musterbildungsverfahren |
JP6663677B2 (ja) * | 2015-10-06 | 2020-03-13 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法、並びに、化合物及び酸拡散制御剤 |
JP6886113B2 (ja) | 2015-12-01 | 2021-06-16 | Jsr株式会社 | 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤 |
KR102638582B1 (ko) | 2016-01-13 | 2024-02-21 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 산 확산 제어제 |
JP6583126B2 (ja) | 2016-04-28 | 2019-10-02 | 信越化学工業株式会社 | 新規カルボン酸オニウム塩、化学増幅レジスト組成物、及びパターン形成方法 |
WO2018043506A1 (ja) | 2016-08-29 | 2018-03-08 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
JP2020160318A (ja) * | 2019-03-27 | 2020-10-01 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 厚膜レジスト組成物およびそれを用いたレジスト膜の製造方法 |
JP7484846B2 (ja) * | 2020-09-28 | 2024-05-16 | 信越化学工業株式会社 | 分子レジスト組成物及びパターン形成方法 |
Family Cites Families (10)
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JPH027660A (ja) * | 1987-10-30 | 1990-01-11 | Kyocera Corp | 光プリンタヘッドを用いた画像形成方法 |
JPH02161436A (ja) * | 1988-12-15 | 1990-06-21 | Oki Electric Ind Co Ltd | フォトレジスト組成物及びその使用方法 |
JPH0344290A (ja) * | 1989-07-12 | 1991-02-26 | Fujitsu Ltd | チップパーティ接地送出方法 |
DE4003025A1 (de) * | 1990-02-02 | 1991-08-08 | Hoechst Ag | Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen |
JP3030672B2 (ja) * | 1991-06-18 | 2000-04-10 | 和光純薬工業株式会社 | 新規なレジスト材料及びパタ−ン形成方法 |
JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
DE4323289A1 (de) * | 1993-07-12 | 1995-01-19 | Siemens Ag | Strahlungsempfindliche Lackzusammensetzung |
US5663035A (en) * | 1994-04-13 | 1997-09-02 | Hoechst Japan Limited | Radiation-sensitive mixture comprising a basic iodonium compound |
JPH08320554A (ja) * | 1995-05-24 | 1996-12-03 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JPH0943834A (ja) * | 1995-08-01 | 1997-02-14 | Nippon Sheet Glass Co Ltd | セルフパターニング方法 |
-
1998
- 1998-08-17 KR KR1019980033258A patent/KR100551653B1/ko not_active IP Right Cessation
- 1998-08-18 EP EP98115537A patent/EP0898201B1/de not_active Expired - Lifetime
- 1998-08-18 US US09/135,855 patent/US6136500A/en not_active Expired - Lifetime
- 1998-08-18 DE DE69813113T patent/DE69813113T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69813113D1 (de) | 2003-05-15 |
KR19990023645A (ko) | 1999-03-25 |
KR100551653B1 (ko) | 2006-05-25 |
EP0898201A1 (de) | 1999-02-24 |
EP0898201B1 (de) | 2003-04-09 |
US6136500A (en) | 2000-10-24 |
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