DE69728366D1 - Strahlungsempfindliche Harzzusammensetzung - Google Patents

Strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE69728366D1
DE69728366D1 DE69728366T DE69728366T DE69728366D1 DE 69728366 D1 DE69728366 D1 DE 69728366D1 DE 69728366 T DE69728366 T DE 69728366T DE 69728366 T DE69728366 T DE 69728366T DE 69728366 D1 DE69728366 D1 DE 69728366D1
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69728366T
Other languages
English (en)
Other versions
DE69728366T2 (de
Inventor
Mitsuhito Suwa
Haruo Iwasawa
Toru Kajita
Shin-Ichiro Iwanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE69728366D1 publication Critical patent/DE69728366D1/de
Application granted granted Critical
Publication of DE69728366T2 publication Critical patent/DE69728366T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
DE69728366T 1996-12-19 1997-12-12 Strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE69728366T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35386696 1996-12-19
JP35386696 1996-12-19

Publications (2)

Publication Number Publication Date
DE69728366D1 true DE69728366D1 (de) 2004-05-06
DE69728366T2 DE69728366T2 (de) 2005-02-24

Family

ID=18433757

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728366T Expired - Lifetime DE69728366T2 (de) 1996-12-19 1997-12-12 Strahlungsempfindliche Harzzusammensetzung

Country Status (4)

Country Link
US (2) US6187504B1 (de)
EP (1) EP0849634B1 (de)
KR (2) KR100525688B1 (de)
DE (1) DE69728366T2 (de)

Families Citing this family (63)

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EP0877293B1 (de) 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positiv arbeitende lichtempfindliche Zusammensetzung
JP2002504573A (ja) * 1998-02-23 2002-02-12 ザ ビー．エフ．グッドリッチ カンパニー 耐腐食性が高められた多環式レジスト組成物
JP3955385B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
JP3955148B2 (ja) * 1998-04-13 2007-08-08 富士通株式会社 レジスト組成物およびパターン形成方法
US6291130B1 (en) * 1998-07-27 2001-09-18 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3638086B2 (ja) * 1998-08-21 2005-04-13 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
TW500976B (en) 1999-08-25 2002-09-01 Tokyo Ohka Kogyo Co Ltd Multilayered body for photolithographic patterning
JP4161497B2 (ja) * 1999-12-24 2008-10-08 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
US6623907B2 (en) 2000-02-04 2003-09-23 Jsr Corporation Radiation-sensitive resin composition
JP4253423B2 (ja) * 2000-06-14 2009-04-15 富士フイルム株式会社 ポジ型レジスト積層物
US6664022B1 (en) * 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
US6680157B1 (en) * 2000-10-12 2004-01-20 Massachusetts Institute Of Technology Resist methods and materials for UV and electron-beam lithography with reduced outgassing
JP2002156750A (ja) * 2000-11-20 2002-05-31 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US6838225B2 (en) * 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition
CN100409101C (zh) * 2001-05-11 2008-08-06 希普雷公司 厚膜型光致抗蚀剂及其使用方法
KR100557555B1 (ko) * 2001-06-21 2006-03-03 주식회사 하이닉스반도체 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체
CN1916760B (zh) * 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
US6696216B2 (en) * 2001-06-29 2004-02-24 International Business Machines Corporation Thiophene-containing photo acid generators for photolithography
JP4595275B2 (ja) * 2001-09-28 2010-12-08 住友化学株式会社 化学増幅型ポジ型レジスト組成物
EP1308781A3 (de) * 2001-10-05 2003-09-03 Shipley Co. L.L.C. Cyclische sulfonium und sulfoxonium Fotosäure erzeugende Verbindungen und diese Verbindungen enthaltende Fotoresiste
JP2003186194A (ja) * 2001-12-20 2003-07-03 Sony Corp レジスト材料及び露光方法
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
KR101003211B1 (ko) * 2002-09-30 2010-12-21 니폰 제온 가부시키가이샤 감방사선성 수지 조성물, 및 수지 패턴막과 그것의 형성 방법
KR101086169B1 (ko) * 2003-01-22 2011-11-25 제이에스알 가부시끼가이샤 술포늄염 화합물, 감방사선성 산 발생제 및 포지티브형감방사선성 수지 조성물
CN100457749C (zh) * 2003-01-22 2009-02-04 Jsr株式会社 锍盐化合物、辐射敏感性酸产生剂和正型辐射敏感性树脂组合物
JP2004334060A (ja) * 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 化学増幅型レジスト用光酸発生剤及びそれを含有するレジスト材料並びにパターン形成方法
DE112005002819B4 (de) * 2004-12-03 2016-12-22 Tokyo Ohka Kogyo Co., Ltd. Positivresist - Zusammensetzung und Verfahren zur Erzeugung eines Resist - Musters
JP4937587B2 (ja) * 2006-01-17 2012-05-23 東京応化工業株式会社 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
US20080020289A1 (en) * 2006-07-24 2008-01-24 Shin-Etsu Chemical Co., Ltd. Novel polymer, positive resist composition and patterning process using the same
US9023579B2 (en) 2009-07-10 2015-05-05 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition
JP5645510B2 (ja) * 2009-07-10 2014-12-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法
WO2011025065A1 (en) 2009-08-28 2011-03-03 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
JP5246220B2 (ja) 2010-08-23 2013-07-24 信越化学工業株式会社 スルホニウム塩、レジスト材料及びパターン形成方法
JP5609815B2 (ja) 2010-08-26 2014-10-22 信越化学工業株式会社 ポジ型化学増幅レジスト材料及びパターン形成方法
US8597869B2 (en) 2010-10-25 2013-12-03 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, resist composition, and patterning process
JP5454458B2 (ja) 2010-11-25 2014-03-26 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
KR101882217B1 (ko) * 2011-10-18 2018-07-26 주식회사 동진쎄미켐 오엘이디용 폴리이미드 감광성 수지 조성물
JP5668710B2 (ja) 2012-02-27 2015-02-12 信越化学工業株式会社 高分子化合物及びそれを含んだレジスト材料並びにパターン形成方法、該高分子化合物の製造方法
CN103454857B (zh) * 2012-05-31 2020-01-03 住友化学株式会社 光致抗蚀剂组合物
JP5815575B2 (ja) 2013-01-11 2015-11-17 信越化学工業株式会社 パターン形成方法
JP5815576B2 (ja) 2013-01-11 2015-11-17 信越化学工業株式会社 パターン形成方法
JP6002705B2 (ja) 2013-03-01 2016-10-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
JP6097652B2 (ja) 2013-07-31 2017-03-15 富士フイルム株式会社 パターン形成方法、パターン、並びに、これらを用いたエッチング方法、及び、電子デバイスの製造方法
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
TWI483073B (zh) * 2014-04-02 2015-05-01 Chi Mei Corp 感光性樹脂組成物、彩色濾光片及其製造方法、液晶顯示裝置
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US10088749B2 (en) * 2016-09-30 2018-10-02 Rohm And Haas Electronic Materials Llc Photoacid-generating compound and associated polymer, photoresist composition, and method of forming a photoresist relief image
US20190086804A1 (en) * 2017-09-21 2019-03-21 Kabushiki Kaisha Toshiba Photosensitive composition and method of manufacturing graphene device

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Also Published As

Publication number Publication date
EP0849634B1 (de) 2004-03-31
KR100525688B1 (ko) 2005-12-21
EP0849634A1 (de) 1998-06-24
KR19980063946A (ko) 1998-10-07
DE69728366T2 (de) 2005-02-24
US20010014427A1 (en) 2001-08-16
US6322949B2 (en) 2001-11-27
KR100556646B1 (ko) 2006-03-06
US6187504B1 (en) 2001-02-13

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