DE69401906D1 - Strahlungsempfindliche Harzzusammensetzung - Google Patents

Strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE69401906D1
DE69401906D1 DE69401906T DE69401906T DE69401906D1 DE 69401906 D1 DE69401906 D1 DE 69401906D1 DE 69401906 T DE69401906 T DE 69401906T DE 69401906 T DE69401906 T DE 69401906T DE 69401906 D1 DE69401906 D1 DE 69401906D1
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69401906T
Other languages
English (en)
Other versions
DE69401906T2 (de
Inventor
Mikio Yamachika
Eiichi Kobayashi
Toshiyuki Ota
Akira Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Application granted granted Critical
Publication of DE69401906D1 publication Critical patent/DE69401906D1/de
Publication of DE69401906T2 publication Critical patent/DE69401906T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE69401906T 1993-12-24 1994-12-16 Strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE69401906T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34579293 1993-12-24
JP26811294A JP3203995B2 (ja) 1993-12-24 1994-10-07 感放射線性樹脂組成物

Publications (2)

Publication Number Publication Date
DE69401906D1 true DE69401906D1 (de) 1997-04-10
DE69401906T2 DE69401906T2 (de) 1997-07-03

Family

ID=26548172

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401906T Expired - Lifetime DE69401906T2 (de) 1993-12-24 1994-12-16 Strahlungsempfindliche Harzzusammensetzung

Country Status (5)

Country Link
US (1) US5556734A (de)
EP (1) EP0660187B1 (de)
JP (1) JP3203995B2 (de)
KR (1) KR100304223B1 (de)
DE (1) DE69401906T2 (de)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
US5744281A (en) * 1993-09-14 1998-04-28 Kabushiki Kaisha Toshiba Resist composition for forming a pattern and method of forming a pattern wherein the composition 4-phenylpyridine as an additive
US6060207A (en) * 1994-07-11 2000-05-09 Kabushiki Kaisha Toshiba Photosensitive material
DE59504291D1 (de) * 1994-09-12 1998-12-24 Siemens Ag Photolithographische strukturerzeugung
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
US5952150A (en) * 1995-06-08 1999-09-14 Jsr Corporation Radiation sensitive resin composition
JP2956824B2 (ja) * 1995-06-15 1999-10-04 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
JP3506817B2 (ja) * 1995-07-26 2004-03-15 クラリアント インターナショナル リミテッド 放射線感応性組成物
JP3073149B2 (ja) 1995-10-30 2000-08-07 東京応化工業株式会社 ポジ型レジスト組成物
US5879856A (en) 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
KR970059835A (ko) * 1996-01-18 1997-08-12 김광호 화학 증폭형 레지스트용 베이스 수지
US5962180A (en) * 1996-03-01 1999-10-05 Jsr Corporation Radiation sensitive composition
US5703137A (en) * 1996-03-14 1997-12-30 Rhone-Poulenc Chimie Initiators for the cationic crosslinking of polymers containing organofunctional groups
JP3125678B2 (ja) * 1996-04-08 2001-01-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
DE69712988T2 (de) * 1996-07-18 2002-11-21 Jsr Corp Strahlungsempfindliche Harzzusammensetzung
US6190829B1 (en) 1996-09-16 2001-02-20 International Business Machines Corporation Low “K” factor hybrid photoresist
JP3679205B2 (ja) * 1996-09-20 2005-08-03 富士写真フイルム株式会社 ポジ型感光性組成物
TW490593B (en) * 1996-10-16 2002-06-11 Sumitomo Chemical Co Positive resist composition
JP3695024B2 (ja) * 1996-11-14 2005-09-14 Ｊｓｒ株式会社 半導体デバイス製造用感放射線性樹脂組成物
JP3711550B2 (ja) * 1996-12-09 2005-11-02 日本曹達株式会社 狭分散アルケニルフェノール系共重合体及びその製造方法
JPH10246959A (ja) * 1997-03-05 1998-09-14 Mitsubishi Electric Corp レジストパターン形成方法およびレジスト材料
TW546540B (en) 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
JP3873372B2 (ja) * 1997-05-26 2007-01-24 住友化学株式会社 ポジ型フォトレジスト組成物
JP3414197B2 (ja) * 1997-05-26 2003-06-09 住友化学工業株式会社 フォトレジスト組成物
JP3823449B2 (ja) * 1997-06-16 2006-09-20 住友化学株式会社 フォトレジスト組成物
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
JP3627465B2 (ja) 1997-08-15 2005-03-09 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6117622A (en) * 1997-09-05 2000-09-12 Fusion Systems Corporation Controlled shrinkage of photoresist
US6057084A (en) * 1997-10-03 2000-05-02 Fusion Systems Corporation Controlled amine poisoning for reduced shrinkage of features formed in photoresist
JP3731328B2 (ja) * 1997-12-03 2006-01-05 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6383712B1 (en) * 1998-06-05 2002-05-07 International Business Machines Corporation Polymer-bound sensitizer
US6127089A (en) * 1998-08-28 2000-10-03 Advanced Micro Devices, Inc. Interconnect structure with low k dielectric materials and method of making the same with single and dual damascene techniques
US6630285B2 (en) * 1998-10-15 2003-10-07 Mitsui Chemicals, Inc. Positive sensitive resin composition and a process for forming a resist pattern therewith
KR100275748B1 (ko) * 1998-10-29 2001-03-02 윤종용 베이스 폴리머에 디알킬 말로네이트를 포함하는 레지스트 조성물
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
KR100647527B1 (ko) * 1999-04-01 2006-11-17 후지 샤신 필름 가부시기가이샤 원자외선 노광용 포지티브 포토레지스트 조성물
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
TW550438B (en) * 1999-04-26 2003-09-01 Jsr Corp Radiation-sensitive resin composition
US6531259B1 (en) * 1999-06-21 2003-03-11 Matsushita Electric Industrial Co., Ltd. Pattern formation method and pattern formation material
KR100308423B1 (ko) 1999-09-07 2001-09-26 주식회사 동진쎄미켐 화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트 조성물
DE10008843A1 (de) 2000-02-25 2001-09-06 Beiersdorf Ag Polare Acrylathaftklebemassen
DE10008840A1 (de) * 2000-02-25 2001-09-06 Beiersdorf Ag Strukturierte UV-vernetzte Acrylathaftklebemassen
JP4806486B2 (ja) * 2000-02-28 2011-11-02 日東電工株式会社 紫外線架橋型粘着剤組成物とその製造方法ならびに粘着シ―トとその製造方法
FR2809829B1 (fr) * 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist
JP4253423B2 (ja) * 2000-06-14 2009-04-15 富士フイルム株式会社 ポジ型レジスト積層物
DE10036803A1 (de) * 2000-07-28 2002-02-07 Tesa Ag Haftklebemassen auf Basis von Blockcopolymeren der Struktur P(A/C)-P(B)-P(A/C)
DE10036802A1 (de) 2000-07-28 2002-02-07 Tesa Ag Haftklebemassen auf Basis von Blockcopolymeren der Struktur P(A)-P(B)-P(A)
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
TWI225492B (en) * 2000-09-25 2004-12-21 Ciba Sc Holding Ag Composition and process for enhancing controlled free radical polymerization
JP2004536328A (ja) * 2000-11-29 2004-12-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 塩基および界面活性剤を含むマイクロリソグラフィ用フォトレジスト組成物
WO2002069042A1 (en) * 2001-02-21 2002-09-06 Arch Specialty Chemicals, Inc. Wet etch compatible deep uv photoresist compositions
US6794109B2 (en) * 2001-02-23 2004-09-21 Massachusetts Institute Of Technology Low abosorbing resists for 157 nm lithography
DE10109067A1 (de) 2001-02-24 2002-09-12 Tesa Ag Haftklebemasse mit geringem Ausgasungsverhalten
JP3988517B2 (ja) * 2001-04-27 2007-10-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2003112321A (ja) * 2001-10-02 2003-04-15 Sony Corp 加工用マスター基材及び同マスター基材の製造方法
US7067227B2 (en) * 2002-05-23 2006-06-27 Applied Materials, Inc. Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
US7700257B2 (en) * 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
JP4318945B2 (ja) * 2003-04-07 2009-08-26 東京応化工業株式会社 厚膜用化学増幅型ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法及び接続端子の製造方法
DE102004009536A1 (de) * 2004-02-21 2005-09-08 Micro Resist Technology Gmbh Verfahren zur Herstellung und Strukturierung eines lichtempfindlichen, hochviskosen, chemisch verstärkten, wässrig-alkalisch entwickelbaren Positiv-Photoresists
JP4796792B2 (ja) 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
TW200715068A (en) 2005-09-06 2007-04-16 Koninkl Philips Electronics Nv Lithographic method
TW200715067A (en) 2005-09-06 2007-04-16 Koninkl Philips Electronics Nv Lithographic method
KR101442860B1 (ko) 2006-09-08 2014-09-22 제이에스알 가부시끼가이샤 감방사선성 조성물 및 이것에 사용되는 저분자량 화합물의 제조 방법
WO2009145120A1 (ja) * 2008-05-30 2009-12-03 日立化成工業株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
US8246918B2 (en) * 2008-10-21 2012-08-21 Fina Technology, Inc. Propylene polymers for lab/medical devices
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
JP6332113B2 (ja) * 2014-12-08 2018-05-30 信越化学工業株式会社 シュリンク材料及びパターン形成方法
CN107207456B (zh) 2015-02-02 2021-05-04 巴斯夫欧洲公司 潜酸及其用途
JP7479139B2 (ja) * 2019-12-10 2024-05-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58205147A (ja) * 1982-05-25 1983-11-30 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0130599B1 (de) * 1983-06-29 1988-08-10 Fuji Photo Film Co., Ltd. Photolösungsfähige Zusammensetzung
JPS6037549A (ja) * 1983-08-10 1985-02-26 Fuji Photo Film Co Ltd 光可溶化組成物
JPS6052845A (ja) * 1983-09-02 1985-03-26 Japan Synthetic Rubber Co Ltd パタ−ン形成材料
EP0140273B1 (de) * 1983-11-01 1991-09-11 Hoechst Celanese Corporation Tief UV-empfindliche positive Photolackzusammensetzung, lichtempfindliches Element und dasselbe enthaltendes gegen Hitze widerstandsfähiges photochemisches Bild
US5059513A (en) * 1983-11-01 1991-10-22 Hoechst Celanese Corporation Photochemical image process of positive photoresist element with maleimide copolymer
US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
EP0285025A3 (de) * 1987-03-30 1989-01-18 Shipley Company Inc. Silylierte Phenolharze
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
JPH01293339A (ja) * 1988-05-23 1989-11-27 Tosoh Corp フォトレジスト組成物
JP2578646B2 (ja) * 1988-07-18 1997-02-05 三洋電機株式会社 非水系二次電池
JPH0344290A (ja) * 1989-07-12 1991-02-26 Fujitsu Ltd チップパーティ接地送出方法
JPH03206548A (ja) * 1990-01-08 1991-09-09 Nec Corp 時系列記憶方法
JP2881969B2 (ja) * 1990-06-05 1999-04-12 富士通株式会社 放射線感光レジストとパターン形成方法
JP3008594B2 (ja) * 1990-08-31 2000-02-14 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
AU654698B2 (en) * 1991-03-13 1994-11-17 Toshiba Monofrax Co., Ltd. A method and apparatus for producing fibers
JP3238465B2 (ja) * 1991-04-30 2001-12-17 株式会社東芝 パターン形成用レジストおよびパターン形成方法
JPH05107757A (ja) * 1991-10-19 1993-04-30 Canon Inc 感光性樹脂組成物
JP2964733B2 (ja) * 1991-10-23 1999-10-18 三菱電機株式会社 パターン形成材料

Also Published As

Publication number Publication date
KR100304223B1 (ko) 2001-11-22
JPH07230169A (ja) 1995-08-29
DE69401906T2 (de) 1997-07-03
US5556734A (en) 1996-09-17
JP3203995B2 (ja) 2001-09-04
KR950019945A (ko) 1995-07-24
EP0660187B1 (de) 1997-03-05
EP0660187A1 (de) 1995-06-28

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Owner name: JSR CORP., TOKIO/TOKYO, JP