DE69130130D1 - Strahlungsempfindliche Harzzusammensetzung - Google Patents

Strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE69130130D1
DE69130130D1 DE69130130T DE69130130T DE69130130D1 DE 69130130 D1 DE69130130 D1 DE 69130130D1 DE 69130130 T DE69130130 T DE 69130130T DE 69130130 T DE69130130 T DE 69130130T DE 69130130 D1 DE69130130 D1 DE 69130130D1
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69130130T
Other languages
English (en)
Other versions
DE69130130T2 (de
Inventor
Toru Kajita
Takao Miura
Yoshiji Yomoto
Chozo Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Application granted granted Critical
Publication of DE69130130D1 publication Critical patent/DE69130130D1/de
Publication of DE69130130T2 publication Critical patent/DE69130130T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/22Exposing sequentially with the same light pattern different positions of the same surface
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE69130130T 1990-02-20 1991-02-20 Strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE69130130T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3940990 1990-02-20

Publications (2)

Publication Number Publication Date
DE69130130D1 true DE69130130D1 (de) 1998-10-15
DE69130130T2 DE69130130T2 (de) 1999-04-22

Family

ID=12552197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69130130T Expired - Lifetime DE69130130T2 (de) 1990-02-20 1991-02-20 Strahlungsempfindliche Harzzusammensetzung

Country Status (4)

Country Link
US (1) US5238775A (de)
EP (1) EP0443820B1 (de)
KR (1) KR0184870B1 (de)
DE (1) DE69130130T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413896A (en) * 1991-01-24 1995-05-09 Japan Synthetic Rubber Co., Ltd. I-ray sensitive positive resist composition
JPH04328555A (ja) * 1991-04-26 1992-11-17 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
US5296330A (en) * 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
DE4209343A1 (de) * 1992-03-23 1993-09-30 Hoechst Ag 1,2-Naphthochinon-2-diazid-sulfonsäureester, damit hergestelltes strahlungsempfindliches Gemisch und strahlungsempfindliches Aufzeichnungsmaterial
US5384228A (en) * 1992-04-14 1995-01-24 Tokyo Ohka Kogyo Co., Ltd. Alkali-developable positive-working photosensitive resin composition
JPH0643636A (ja) * 1992-07-22 1994-02-18 Fuji Photo Film Co Ltd 感光性平版印刷版
US5401605A (en) * 1992-08-12 1995-03-28 Tokyo Ohka Kogyo Co., Ltd. Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound
EP0599779A1 (de) * 1992-10-29 1994-06-01 OCG Microelectronic Materials AG Hochauflösender negativ arbeitender Photoresist mit grossem Prozessspielraum
DE69407879T2 (de) * 1993-06-30 1998-04-30 Fuji Photo Film Co Ltd Phenolverbindungen, die Methoxymethylgruppen oder Hydroxymethylgruppen enthalten
JP3130188B2 (ja) * 1993-08-31 2001-01-31 富士写真フイルム株式会社 ポジ型感光性平版印刷版
JP3024694B2 (ja) * 1993-11-29 2000-03-21 東京応化工業株式会社 ポジ型ホトレジスト組成物
US5370988A (en) * 1994-02-28 1994-12-06 Minnesota Mining And Manufacturing Company Print stabilizers and antifoggants for photothermography
WO1996022563A1 (fr) * 1995-01-17 1996-07-25 Nippon Zeon Co., Ltd. Composition de resist positif
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
JP3287234B2 (ja) * 1996-09-19 2002-06-04 信越化学工業株式会社 リフトオフ法用ポジ型レジスト組成物及びパターン形成方法
US5674657A (en) * 1996-11-04 1997-10-07 Olin Microelectronic Chemicals, Inc. Positive-working photoresist compositions comprising an alkali-soluble novolak resin made with four phenolic monomers
JP3978255B2 (ja) * 1997-06-24 2007-09-19 Azエレクトロニックマテリアルズ株式会社 リソグラフィー用洗浄剤
JP4019403B2 (ja) * 1999-03-08 2007-12-12 Jsr株式会社 レジストパターンの形成方法
JP2002296772A (ja) * 2001-04-02 2002-10-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
WO2003029898A1 (fr) * 2001-09-27 2003-04-10 Clariant International Ltd. Composition de resine photosensible
JP3750994B2 (ja) * 2001-11-16 2006-03-01 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
JP3894477B2 (ja) * 2002-02-27 2007-03-22 Azエレクトロニックマテリアルズ株式会社 感光性樹脂組成物
US6790582B1 (en) * 2003-04-01 2004-09-14 Clariant Finance Bvi Limited Photoresist compositions
US6905809B2 (en) 2003-04-01 2005-06-14 Clariant Finance (Bvi) Limited Photoresist compositions
JP4347110B2 (ja) * 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はeuv用ポジ型レジスト組成物
WO2006044338A1 (en) * 2004-10-13 2006-04-27 Dow Global Technologies Inc. Aqueous developable benzocyclobutene-based polymer composition and method of use of such compositions
KR101430962B1 (ko) * 2008-03-04 2014-08-18 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법
KR20100077229A (ko) * 2008-12-29 2010-07-08 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
KR101146622B1 (ko) * 2009-08-31 2012-05-16 금호석유화학 주식회사 감광성 화합물 및 이를 포함하는 감광성 조성물
TWI485521B (zh) * 2010-06-28 2015-05-21 Everlight Chem Ind Corp 正型感光樹脂組成物
KR101615980B1 (ko) * 2015-07-22 2016-04-29 영창케미칼 주식회사 반도체 패턴 형성을 위한 KrF 레이저용 네가티브형 포토레지스트 조성물

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL76414C (de) * 1949-07-23
DE2547905C2 (de) * 1975-10-25 1985-11-21 Hoechst Ag, 6230 Frankfurt Lichtempfindliches Aufzeichnungsmaterial
DE2828037A1 (de) * 1978-06-26 1980-01-10 Hoechst Ag Lichtempfindliches gemisch
DE3039926A1 (de) * 1980-10-23 1982-05-27 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
US4499271A (en) * 1982-08-20 1985-02-12 Zoecon Corporation 3-Phosphinyloxy-4-(substituted phenoxy)alkenoic acid esters
JPS61141441A (ja) * 1984-12-14 1986-06-28 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
US4626492A (en) * 1985-06-04 1986-12-02 Olin Hunt Specialty Products, Inc. Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound
US4737437A (en) * 1986-03-27 1988-04-12 East Shore Chemical Co. Light sensitive diazo compound, composition and method of making the composition
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
JP2552891B2 (ja) * 1988-01-26 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH063544B2 (ja) * 1988-07-07 1994-01-12 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
JP2571136B2 (ja) * 1989-11-17 1997-01-16 日本ゼオン株式会社 ポジ型レジスト組成物
JPH061377B2 (ja) * 1989-12-28 1994-01-05 日本ゼオン株式会社 ポジ型レジスト組成物
JPH06314898A (ja) * 1993-04-30 1994-11-08 Sony Corp 手挿入生産方式の選択システム

Also Published As

Publication number Publication date
KR920000009A (ko) 1992-01-10
EP0443820B1 (de) 1998-09-09
KR0184870B1 (ko) 1999-04-01
US5238775A (en) 1993-08-24
EP0443820A3 (en) 1991-11-27
EP0443820A2 (de) 1991-08-28
DE69130130T2 (de) 1999-04-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JSR CORP., TOKIO/TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: MOSELPATENT TRIERPATENT, 54290 TRIER