TW284860B - - Google Patents

Info

Publication number
TW284860B
TW284860B TW084111546A TW84111546A TW284860B TW 284860 B TW284860 B TW 284860B TW 084111546 A TW084111546 A TW 084111546A TW 84111546 A TW84111546 A TW 84111546A TW 284860 B TW284860 B TW 284860B
Authority
TW
Taiwan
Application number
TW084111546A
Original Assignee
Hekisto Japan Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hekisto Japan Kk filed Critical Hekisto Japan Kk
Application granted granted Critical
Publication of TW284860B publication Critical patent/TW284860B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
TW084111546A 1994-11-02 1995-11-01 TW284860B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26957994A JP3549592B2 (ja) 1994-11-02 1994-11-02 放射線感応性組成物

Publications (1)

Publication Number Publication Date
TW284860B true TW284860B (zh) 1996-09-01

Family

ID=17474336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111546A TW284860B (zh) 1994-11-02 1995-11-01

Country Status (6)

Country Link
US (1) US5738972A (zh)
EP (1) EP0710885B1 (zh)
JP (1) JP3549592B2 (zh)
KR (1) KR100383471B1 (zh)
DE (1) DE69506999T2 (zh)
TW (1) TW284860B (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262720A (ja) * 1995-03-28 1996-10-11 Hoechst Ind Kk 可塑剤を含む放射線感応性組成物
JPH0954437A (ja) * 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JPH09325496A (ja) * 1996-06-04 1997-12-16 Sony Corp 感光性組成物
JP3679205B2 (ja) * 1996-09-20 2005-08-03 富士写真フイルム株式会社 ポジ型感光性組成物
JP3873372B2 (ja) * 1997-05-26 2007-01-24 住友化学株式会社 ポジ型フォトレジスト組成物
JP3052917B2 (ja) * 1997-10-24 2000-06-19 日本電気株式会社 化学増幅系レジスト
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
KR100596125B1 (ko) * 1998-12-22 2006-07-05 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
MY133599A (en) * 1999-10-07 2007-11-30 Az Electronic Mat Japan K K Photosensitive composition
JP4272805B2 (ja) * 1999-12-27 2009-06-03 富士フイルム株式会社 ポジ型感放射線性組成物
JP4562240B2 (ja) * 2000-05-10 2010-10-13 富士フイルム株式会社 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
DE10243742B4 (de) * 2002-09-20 2007-11-08 Qimonda Ag Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists
DE10243745A1 (de) * 2002-09-20 2004-04-15 Infineon Technologies Ag Hochempfindlicher und hochauflösender Fotoresist für die Ionenprojektions-Lithographie
KR20080026066A (ko) 2006-09-19 2008-03-24 후지필름 가부시키가이샤 감광성 조성물, 감광성 조성물에 사용하는 화합물 및감광성 조성물을 사용한 패턴형성방법
KR100913058B1 (ko) * 2008-08-25 2009-08-20 금호석유화학 주식회사 포지티브형 감광성 수지 조성물, 패턴 형성 방법 및 반도체소자
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
US8932796B2 (en) 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
US9921480B2 (en) * 2016-02-10 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd Extreme ultraviolet photoresist

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0307751A3 (en) * 1987-09-16 1990-05-16 Hoechst Aktiengesellschaft 3-mono- and 3,5-disubstituted-4-acetoxy and -4-hydroxystyrenes and process for their production
EP0307752B1 (en) * 1987-09-16 1995-02-22 Hoechst Aktiengesellschaft Poly(3-mono- and 3,5-disubstituted-4-acetoxystyrenes and 4-hydroxy-styrenes)and their use
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JPH0450851A (ja) * 1990-06-14 1992-02-19 Sumitomo Chem Co Ltd ポジ型感放射線性レジスト組成物
DE4120173A1 (de) * 1991-06-19 1992-12-24 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
EP0537524A1 (en) * 1991-10-17 1993-04-21 Shipley Company Inc. Radiation sensitive compositions and methods
DE4222968A1 (de) * 1992-07-13 1994-01-20 Hoechst Ag Positiv-arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
KR100355254B1 (en) * 1993-02-15 2003-03-31 Clariant Finance Bvi Ltd Positive type radiation-sensitive mixture
JP3573358B2 (ja) * 1994-02-25 2004-10-06 クラリアント インターナショナル リミテッド 放射線感応性組成物
JPH08110635A (ja) * 1994-10-07 1996-04-30 Shin Etsu Chem Co Ltd 化学増幅ポジ型レジスト材料

Also Published As

Publication number Publication date
JP3549592B2 (ja) 2004-08-04
KR960018762A (ko) 1996-06-17
US5738972A (en) 1998-04-14
KR100383471B1 (ko) 2003-08-21
EP0710885B1 (en) 1998-12-30
DE69506999T2 (de) 1999-08-19
EP0710885A1 (en) 1996-05-08
JPH08129260A (ja) 1996-05-21
DE69506999D1 (de) 1999-02-11

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MK4A Expiration of patent term of an invention patent