DE69734138D1 - Suspension zum chemisch-mechanischen Polieren von Kupfersubstraten - Google Patents
Suspension zum chemisch-mechanischen Polieren von KupfersubstratenInfo
- Publication number
- DE69734138D1 DE69734138D1 DE69734138T DE69734138T DE69734138D1 DE 69734138 D1 DE69734138 D1 DE 69734138D1 DE 69734138 T DE69734138 T DE 69734138T DE 69734138 T DE69734138 T DE 69734138T DE 69734138 D1 DE69734138 D1 DE 69734138D1
- Authority
- DE
- Germany
- Prior art keywords
- chemical mechanical
- mechanical polishing
- substrate
- suspension
- polishing slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 6
- 239000000126 substance Substances 0.000 title abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 239000000725 suspension Substances 0.000 title 1
- 239000002243 precursor Substances 0.000 abstract 4
- 239000002002 slurry Substances 0.000 abstract 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract 1
- 239000004202 carbamide Substances 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- ing And Chemical Polishing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/763,705 US5954997A (en) | 1996-12-09 | 1996-12-09 | Chemical mechanical polishing slurry useful for copper substrates |
US763705 | 1996-12-09 | ||
US891649 | 1997-07-11 | ||
US08/891,649 US6126853A (en) | 1996-12-09 | 1997-07-11 | Chemical mechanical polishing slurry useful for copper substrates |
US944036 | 1997-09-29 | ||
US08/944,036 US6309560B1 (en) | 1996-12-09 | 1997-09-29 | Chemical mechanical polishing slurry useful for copper substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69734138D1 true DE69734138D1 (de) | 2005-10-13 |
DE69734138T2 DE69734138T2 (de) | 2006-01-19 |
Family
ID=27419572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69734138T Expired - Lifetime DE69734138T2 (de) | 1996-12-09 | 1997-12-05 | Suspension zum chemisch-mechanischen Polieren von Kupfersubstraten |
Country Status (13)
Country | Link |
---|---|
US (1) | US6309560B1 (de) |
EP (2) | EP0846742B1 (de) |
JP (1) | JP4494538B2 (de) |
KR (1) | KR100690470B1 (de) |
AT (1) | ATE304040T1 (de) |
AU (1) | AU5373998A (de) |
DE (1) | DE69734138T2 (de) |
DK (1) | DK0846742T3 (de) |
ES (1) | ES2248831T3 (de) |
IL (1) | IL130393A0 (de) |
MY (2) | MY185089A (de) |
TW (1) | TW419714B (de) |
WO (1) | WO1998026025A1 (de) |
Families Citing this family (129)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258137B1 (en) * | 1992-02-05 | 2001-07-10 | Saint-Gobain Industrial Ceramics, Inc. | CMP products |
US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
US6432828B2 (en) | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
EP1086484A4 (de) * | 1998-04-10 | 2003-08-06 | Ferro Corp | Aufschlämmung zum chemisch-mechanischen polieren von metallischen oberflächen |
JP3998813B2 (ja) * | 1998-06-15 | 2007-10-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
GB2384003B (en) * | 1998-06-15 | 2003-09-03 | Fujimi Inc | Polishing composition |
US6217416B1 (en) | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
FR2781922B1 (fr) * | 1998-07-31 | 2001-11-23 | Clariant France Sa | Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre |
CN1204602C (zh) | 1998-08-31 | 2005-06-01 | 日立化成工业株式会社 | 金属用研磨液及研磨方法 |
CN1126152C (zh) * | 1998-08-31 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体制程用的化学机械研磨组合物 |
DE19842709A1 (de) * | 1998-09-17 | 2000-03-30 | Siemens Ag | Polierflüssigkeit zum Polieren von Bauelementen, vorzugsweise Wafern, insbesondere zum Chemisch-Mechanischen Polieren derartiger Bauelemente |
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WO2000023534A1 (en) | 1998-10-21 | 2000-04-27 | W.R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles |
SG99289A1 (en) * | 1998-10-23 | 2003-10-27 | Ibm | Chemical-mechanical planarization of metallurgy |
US6245690B1 (en) | 1998-11-04 | 2001-06-12 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
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US6276996B1 (en) | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
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JP2000252243A (ja) * | 1998-12-28 | 2000-09-14 | Hitachi Chem Co Ltd | 金属用研磨液及びそれを用いた研磨方法 |
JP4866831B2 (ja) * | 1998-12-28 | 2012-02-01 | 日立化成工業株式会社 | 金属用研磨液を用いる研磨方法 |
JP4816836B2 (ja) * | 1998-12-28 | 2011-11-16 | 日立化成工業株式会社 | 金属用研磨液及びそれを用いた研磨方法 |
EP2194570A1 (de) | 1998-12-28 | 2010-06-09 | Hitachi Chemical Co., Ltd. | Materialien für eine Reinigungsflüssigkeit für Metall, Reinigungsflüssigkeit für Metall, Herstellungsverfahren dafür und Reinigungsverfahren damit |
JP5429104B2 (ja) * | 1998-12-28 | 2014-02-26 | 日立化成株式会社 | 金属用研磨液及びそれを用いた研磨方法 |
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US6238592B1 (en) * | 1999-03-10 | 2001-05-29 | 3M Innovative Properties Company | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication |
DE19927286B4 (de) * | 1999-06-15 | 2011-07-28 | Qimonda AG, 81739 | Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche |
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JP4555936B2 (ja) * | 1999-07-21 | 2010-10-06 | 日立化成工業株式会社 | Cmp研磨液 |
CN1107097C (zh) * | 1999-07-28 | 2003-04-30 | 长兴化学工业股份有限公司 | 化学机械研磨组合物及方法 |
CN1209430C (zh) * | 1999-08-13 | 2005-07-06 | 卡伯特微电子公司 | 化学机械抛光系统及其使用方法 |
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-
1997
- 1997-09-29 US US08/944,036 patent/US6309560B1/en not_active Expired - Lifetime
- 1997-12-05 EP EP97309806A patent/EP0846742B1/de not_active Expired - Lifetime
- 1997-12-05 WO PCT/US1997/022285 patent/WO1998026025A1/en not_active Application Discontinuation
- 1997-12-05 AU AU53739/98A patent/AU5373998A/en not_active Abandoned
- 1997-12-05 IL IL13039397A patent/IL130393A0/xx unknown
- 1997-12-05 KR KR1019997005133A patent/KR100690470B1/ko not_active IP Right Cessation
- 1997-12-05 AT AT97309806T patent/ATE304040T1/de active
- 1997-12-05 DE DE69734138T patent/DE69734138T2/de not_active Expired - Lifetime
- 1997-12-05 DK DK97309806T patent/DK0846742T3/da active
- 1997-12-05 EP EP05004891A patent/EP1559762B1/de not_active Expired - Lifetime
- 1997-12-05 ES ES97309806T patent/ES2248831T3/es not_active Expired - Lifetime
- 1997-12-08 MY MYPI20053185A patent/MY185089A/en unknown
- 1997-12-08 MY MYPI97005901A patent/MY134702A/en unknown
- 1997-12-09 JP JP33880997A patent/JP4494538B2/ja not_active Expired - Fee Related
- 1997-12-09 TW TW086118539A patent/TW419714B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1998026025A1 (en) | 1998-06-18 |
ES2248831T3 (es) | 2006-03-16 |
JPH1121546A (ja) | 1999-01-26 |
EP0846742A2 (de) | 1998-06-10 |
AU5373998A (en) | 1998-07-03 |
TW419714B (en) | 2001-01-21 |
MY134702A (en) | 2007-12-31 |
DE69734138T2 (de) | 2006-01-19 |
EP1559762A3 (de) | 2006-06-07 |
EP0846742B1 (de) | 2005-09-07 |
ATE304040T1 (de) | 2005-09-15 |
US6309560B1 (en) | 2001-10-30 |
JP4494538B2 (ja) | 2010-06-30 |
KR20000057476A (ko) | 2000-09-15 |
EP1559762A2 (de) | 2005-08-03 |
MY185089A (en) | 2021-04-30 |
IL130393A0 (en) | 2000-06-01 |
KR100690470B1 (ko) | 2007-03-09 |
DK0846742T3 (da) | 2005-10-03 |
EP1559762B1 (de) | 2012-09-05 |
EP0846742A3 (de) | 1998-10-28 |
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