EP1086484A4 - Aufschlämmung zum chemisch-mechanischen polieren von metallischen oberflächen - Google Patents

Aufschlämmung zum chemisch-mechanischen polieren von metallischen oberflächen

Info

Publication number
EP1086484A4
EP1086484A4 EP99916387A EP99916387A EP1086484A4 EP 1086484 A4 EP1086484 A4 EP 1086484A4 EP 99916387 A EP99916387 A EP 99916387A EP 99916387 A EP99916387 A EP 99916387A EP 1086484 A4 EP1086484 A4 EP 1086484A4
Authority
EP
European Patent Office
Prior art keywords
slurry
chemical
mechanical polishing
metal surfaces
polishing metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99916387A
Other languages
English (en)
French (fr)
Other versions
EP1086484A1 (de
Inventor
John E Prendergast
Yieshein Her
Suryadevara V Babu
Yuzhuo Li
Mariappan Hariharaputhiran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vibrantz Corp
Original Assignee
Ferro Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferro Corp filed Critical Ferro Corp
Publication of EP1086484A1 publication Critical patent/EP1086484A1/de
Publication of EP1086484A4 publication Critical patent/EP1086484A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP99916387A 1998-04-10 1999-04-05 Aufschlämmung zum chemisch-mechanischen polieren von metallischen oberflächen Withdrawn EP1086484A4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US5861898A 1998-04-10 1998-04-10
US58618 1998-04-10
US27745499A 1999-03-26 1999-03-26
US277454 1999-03-26
PCT/US1999/007482 WO1999053532A1 (en) 1998-04-10 1999-04-05 Slurry for chemical-mechanical polishing metal surfaces

Publications (2)

Publication Number Publication Date
EP1086484A1 EP1086484A1 (de) 2001-03-28
EP1086484A4 true EP1086484A4 (de) 2003-08-06

Family

ID=26737823

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99916387A Withdrawn EP1086484A4 (de) 1998-04-10 1999-04-05 Aufschlämmung zum chemisch-mechanischen polieren von metallischen oberflächen

Country Status (4)

Country Link
EP (1) EP1086484A4 (de)
JP (1) JP2002511650A (de)
KR (1) KR20010042616A (de)
WO (1) WO1999053532A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1107097C (zh) * 1999-07-28 2003-04-30 长兴化学工业股份有限公司 化学机械研磨组合物及方法
WO2001012739A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6468910B1 (en) 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
US6881674B2 (en) 1999-12-28 2005-04-19 Intel Corporation Abrasives for chemical mechanical polishing
US6471884B1 (en) * 2000-04-04 2002-10-29 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an amino acid-containing composition
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
US6541384B1 (en) * 2000-09-08 2003-04-01 Applied Materials, Inc. Method of initiating cooper CMP process
US6702954B1 (en) 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
US6508953B1 (en) * 2000-10-19 2003-01-21 Ferro Corporation Slurry for chemical-mechanical polishing copper damascene structures
JP3825246B2 (ja) * 2000-11-24 2006-09-27 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3816743B2 (ja) * 2000-11-24 2006-08-30 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6740589B2 (en) 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
US20020068454A1 (en) 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
KR100458756B1 (ko) * 2001-06-27 2004-12-03 제일모직주식회사 반도체 소자의 금속배선 연마용 ｃｍｐ 슬러리
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7121943B2 (en) 2001-09-26 2006-10-17 Igt Gaming device with an increasing goal advancement game
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US6743267B2 (en) * 2001-10-15 2004-06-01 Dupont Air Products Nanomaterials Llc Gel-free colloidal abrasive polishing compositions and associated methods
JP3692066B2 (ja) 2001-11-28 2005-09-07 株式会社東芝 Ｃｍｐスラリおよび半導体装置の製造方法
US7121926B2 (en) 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US6730592B2 (en) 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US7049237B2 (en) 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US6620215B2 (en) 2001-12-21 2003-09-16 Dynea Canada, Ltd. Abrasive composition containing organic particles for chemical mechanical planarization
US6830503B1 (en) 2002-01-11 2004-12-14 Cabot Microelectronics Corporation Catalyst/oxidizer-based CMP system for organic polymer films
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
CN1646649A (zh) * 2002-02-26 2005-07-27 应用材料股份有限公司 研磨基材的方法及组合物
US6604987B1 (en) 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
TWI244498B (en) * 2003-11-20 2005-12-01 Eternal Chemical Co Ltd Chemical mechanical abrasive slurry and method of using the same
KR20060016498A (ko) 2004-08-18 2006-02-22 삼성전자주식회사 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법
US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same
US7476620B2 (en) 2005-03-25 2009-01-13 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
CN1854236B (zh) * 2005-04-21 2011-08-03 安集微电子（上海）有限公司 抛光浆料及其用途
US7691287B2 (en) 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
KR100943020B1 (ko) * 2007-06-29 2010-02-17 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
JP5263484B2 (ja) * 2008-02-27 2013-08-14 Ｊｓｒ株式会社 電気光学表示装置用基板に設けられた銅または銅合金からなる配線層を研磨するための化学機械研磨用水系分散体、化学機械研磨用水系分散体の製造方法および化学機械研磨方法
KR100949255B1 (ko) * 2009-05-21 2010-03-25 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
EP0846742A2 (de) * 1996-12-09 1998-06-10 Cabot Corporation Suspension zum chemisch-mechanischen Polieren von Kupfersubstraten
US5770095A (en) * 1994-07-12 1998-06-23 Kabushiki Kaisha Toshiba Polishing agent and polishing method using the same
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930870A (en) * 1973-12-28 1976-01-06 International Business Machines Corporation Silicon polishing solution preparation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
US5770095A (en) * 1994-07-12 1998-06-23 Kabushiki Kaisha Toshiba Polishing agent and polishing method using the same
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
EP0846742A2 (de) * 1996-12-09 1998-06-10 Cabot Corporation Suspension zum chemisch-mechanischen Polieren von Kupfersubstraten

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO9953532A1 *

Also Published As

Publication number Publication date
EP1086484A1 (de) 2001-03-28
WO1999053532A1 (en) 1999-10-21
KR20010042616A (ko) 2001-05-25
JP2002511650A (ja) 2002-04-16

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