DE69434767D1 - Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial - Google Patents

Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial

Info

Publication number
DE69434767D1
DE69434767D1 DE69434767T DE69434767T DE69434767D1 DE 69434767 D1 DE69434767 D1 DE 69434767D1 DE 69434767 T DE69434767 T DE 69434767T DE 69434767 T DE69434767 T DE 69434767T DE 69434767 D1 DE69434767 D1 DE 69434767D1
Authority
DE
Germany
Prior art keywords
needles
aggregate
micro
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69434767T
Other languages
English (en)
Other versions
DE69434767T2 (de
Inventor
Koji Eriguchi
Masafumi Kubota
Masaaki Niwa
Noboru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69434767D1 publication Critical patent/DE69434767D1/de
Publication of DE69434767T2 publication Critical patent/DE69434767T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G02B6/1245—Geodesic lenses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12102—Lens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/964—Roughened surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
DE69434767T 1993-11-02 1994-11-02 Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial Expired - Fee Related DE69434767T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP27419193 1993-11-02
JP27419193 1993-11-02
JP31274793 1993-11-17
JP31274793 1993-11-17
JP16202894 1994-07-14
JP16202894 1994-07-14

Publications (2)

Publication Number Publication Date
DE69434767D1 true DE69434767D1 (de) 2006-07-27
DE69434767T2 DE69434767T2 (de) 2006-11-09

Family

ID=27321938

Family Applications (8)

Application Number Title Priority Date Filing Date
DE69434745T Expired - Fee Related DE69434745T2 (de) 1993-11-02 1994-11-02 Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial und Verfahren zur Herstellung eines Halbleiterbauelements mit einem solchen Aggregat
DE69433694T Expired - Fee Related DE69433694T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69433695T Expired - Fee Related DE69433695T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69433696T Expired - Fee Related DE69433696T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69418143T Expired - Fee Related DE69418143T2 (de) 1993-11-02 1994-11-02 Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial
DE69433728T Expired - Fee Related DE69433728T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69434767T Expired - Fee Related DE69434767T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69433727T Expired - Fee Related DE69433727T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial

Family Applications Before (6)

Application Number Title Priority Date Filing Date
DE69434745T Expired - Fee Related DE69434745T2 (de) 1993-11-02 1994-11-02 Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial und Verfahren zur Herstellung eines Halbleiterbauelements mit einem solchen Aggregat
DE69433694T Expired - Fee Related DE69433694T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69433695T Expired - Fee Related DE69433695T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69433696T Expired - Fee Related DE69433696T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE69418143T Expired - Fee Related DE69418143T2 (de) 1993-11-02 1994-11-02 Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial
DE69433728T Expired - Fee Related DE69433728T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69433727T Expired - Fee Related DE69433727T2 (de) 1993-11-02 1994-11-02 Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial

Country Status (3)

Country Link
US (4) US6033928A (de)
EP (8) EP0892445B1 (de)
DE (8) DE69434745T2 (de)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
EP1154493A3 (de) * 1997-05-30 2003-10-15 Matsushita Electric Industrial Co., Ltd. Lichtemittierende Halbleiteranordnung mit Quantenpunkten
US6188097B1 (en) * 1997-07-02 2001-02-13 Micron Technology, Inc. Rough electrode (high surface area) from Ti and TiN
JP4071360B2 (ja) * 1997-08-29 2008-04-02 株式会社東芝 半導体装置
US6503231B1 (en) 1998-06-10 2003-01-07 Georgia Tech Research Corporation Microneedle device for transport of molecules across tissue
US7344499B1 (en) 1998-06-10 2008-03-18 Georgia Tech Research Corporation Microneedle device for extraction and sensing of bodily fluids
KR100271211B1 (ko) * 1998-07-15 2000-12-01 윤덕용 나노결정을 이용한 비휘발성 기억소자 형성방법
GB9815819D0 (en) * 1998-07-22 1998-09-16 Secr Defence Transferring materials into cells and a microneedle array
US7048723B1 (en) * 1998-09-18 2006-05-23 The University Of Utah Research Foundation Surface micromachined microneedles
US6432724B1 (en) * 1998-11-25 2002-08-13 Micron Technology, Inc. Buried ground plane for high performance system modules
TW429607B (en) * 1999-04-13 2001-04-11 United Microelectronics Corp Structure of dynamic random access memory capacitor and its fabricating method
US6743211B1 (en) 1999-11-23 2004-06-01 Georgia Tech Research Corporation Devices and methods for enhanced microneedle penetration of biological barriers
US6611707B1 (en) 1999-06-04 2003-08-26 Georgia Tech Research Corporation Microneedle drug delivery device
US6313015B1 (en) * 1999-06-08 2001-11-06 City University Of Hong Kong Growth method for silicon nanowires and nanoparticle chains from silicon monoxide
US6509619B1 (en) * 1999-09-10 2003-01-21 Starmega Corporation Strongly textured atomic ridge and dot Mosfets, sensors and filters
US6744079B2 (en) * 2002-03-08 2004-06-01 International Business Machines Corporation Optimized blocking impurity placement for SiGe HBTs
US6551849B1 (en) 1999-11-02 2003-04-22 Christopher J. Kenney Method for fabricating arrays of micro-needles
AU2001275138A1 (en) * 2000-06-02 2001-12-17 The University Of Utah Research Foundation Active needle devices with integrated functionality
EP1311310A4 (de) * 2000-08-21 2004-11-24 Cleveland Clinic Foundation Mikronadelgittermodul und methode zu seiner herstellung
EP1345646A2 (de) 2000-12-14 2003-09-24 Georgia Tech Research Corporation Mikronadel-vorrichtungen und deren herstellung
AU2002231207A1 (en) 2000-12-21 2002-07-01 Biovalve Technologies, Inc. Microneedle array systems
DE10064448A1 (de) * 2000-12-22 2002-07-04 Osram Opto Semiconductors Gmbh Verfahren zum Aufrauhen eines Halbleiterchips für die Optoelektronik
US6767341B2 (en) 2001-06-13 2004-07-27 Abbott Laboratories Microneedles for minimally invasive drug delivery
US6686299B2 (en) * 2001-06-21 2004-02-03 Carlo D. Montemagno Nanosyringe array and method
US6709929B2 (en) * 2001-06-25 2004-03-23 North Carolina State University Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates
AU2002327675A1 (en) 2001-09-19 2003-04-01 Biovalve Technologies, Inc. Microneedles, microneedle arrays, and systems and methods relating to same
US8920375B2 (en) 2001-09-21 2014-12-30 Valeritas, Inc. Gas pressure actuated microneedle arrays, and systems and methods relating to same
JP2003163369A (ja) * 2001-11-27 2003-06-06 Toyota Central Res & Dev Lab Inc 半導体発光素子及び光伝送装置
US20040073175A1 (en) * 2002-01-07 2004-04-15 Jacobson James D. Infusion system
TWI220319B (en) * 2002-03-11 2004-08-11 Solidlite Corp Nano-wire light emitting device
US6894519B2 (en) * 2002-04-11 2005-05-17 Solid State Measurements, Inc. Apparatus and method for determining electrical properties of a semiconductor wafer
EP1427010B1 (de) * 2002-11-29 2012-01-11 STMicroelectronics Srl Verfahren zur Herstellung eines Halbleitersubstrates mit mindestens einem vergrabenen Hohlraum
KR100562498B1 (ko) * 2003-02-12 2006-03-21 삼성전자주식회사 씨엠피 설비의 패드 컨디셔너
US7211296B2 (en) * 2003-08-22 2007-05-01 Battelle Memorial Institute Chalcogenide glass nanostructures
US8551391B2 (en) * 2004-02-17 2013-10-08 Avery Dennison Corporation Method of making microneedles
US20050269286A1 (en) * 2004-06-08 2005-12-08 Manish Sharma Method of fabricating a nano-wire
DE102005014645B4 (de) * 2005-03-31 2007-07-26 Infineon Technologies Ag Anschlusselektrode für Phasen-Wechsel-Material, zugehöriges Phasen-Wechsel-Speicherelement sowie zugehöriges Herstellungsverfahren
WO2006121870A2 (en) * 2005-05-09 2006-11-16 Vesta Research, Ltd. Silicon nanosponge particles
JP2008544214A (ja) 2005-05-09 2008-12-04 セラノス， インコーポレイテッド ポイントオブケア流体システムおよびその使用
JP2009507397A (ja) * 2005-08-22 2009-02-19 キュー・ワン・ナノシステムズ・インコーポレイテッド ナノ構造およびそれを実施する光起電力セル
US8314327B2 (en) * 2005-11-06 2012-11-20 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
US8816191B2 (en) * 2005-11-29 2014-08-26 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
US8791359B2 (en) * 2006-01-28 2014-07-29 Banpil Photonics, Inc. High efficiency photovoltaic cells
US7893512B2 (en) * 2006-02-27 2011-02-22 Los Alamos National Security, Llc Optoelectronic devices utilizing materials having enhanced electronic transitions
US11287421B2 (en) 2006-03-24 2022-03-29 Labrador Diagnostics Llc Systems and methods of sample processing and fluid control in a fluidic system
US8007999B2 (en) 2006-05-10 2011-08-30 Theranos, Inc. Real-time detection of influenza virus
TWI304278B (en) * 2006-06-16 2008-12-11 Ind Tech Res Inst Semiconductor emitting device substrate and method of fabricating the same
CN101148245B (zh) * 2006-09-22 2011-08-24 清华大学 纳米级微孔模具
TR201807756T4 (tr) 2006-09-26 2018-06-21 Infectious Disease Res Inst Sentetik adjuvan içeren aşı bileşimi.
US20090181078A1 (en) * 2006-09-26 2009-07-16 Infectious Disease Research Institute Vaccine composition containing synthetic adjuvant
US8012744B2 (en) 2006-10-13 2011-09-06 Theranos, Inc. Reducing optical interference in a fluidic device
US20080113391A1 (en) 2006-11-14 2008-05-15 Ian Gibbons Detection and quantification of analytes in bodily fluids
US8158430B1 (en) 2007-08-06 2012-04-17 Theranos, Inc. Systems and methods of fluidic sample processing
CA3138078C (en) 2007-10-02 2024-02-13 Labrador Diagnostics Llc Modular point-of-care devices and uses thereof
US7934921B2 (en) * 2007-10-31 2011-05-03 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, system, and method for guided growth of patterned media using monodisperse nanospheres
WO2009137241A2 (en) 2008-04-14 2009-11-12 Bandgap Engineering, Inc. Process for fabricating nanowire arrays
US7902540B2 (en) * 2008-05-21 2011-03-08 International Business Machines Corporation Fast P-I-N photodetector with high responsitivity
US20100051932A1 (en) * 2008-08-28 2010-03-04 Seo-Yong Cho Nanostructure and uses thereof
US8114787B2 (en) 2009-02-19 2012-02-14 Empire Technology Development Llc Integrated circuit nanowires
US8450133B2 (en) 2009-03-16 2013-05-28 Acorn Technologies, Inc. Strained-enhanced silicon photon-to-electron conversion devices
EP2437753B1 (de) 2009-06-05 2016-08-31 Infectious Disease Research Institute Synthetische glucopyranosyl-lipid-adjuvanzien und impfstoffzusammensetzungen die diese enthalten
WO2011017173A2 (en) * 2009-07-28 2011-02-10 Bandgap Engineering Inc. Silicon nanowire arrays on an organic conductor
CN102714137B (zh) 2009-10-16 2015-09-30 康奈尔大学 包括纳米线结构的方法和装置
NZ599873A (en) 2009-10-19 2014-09-26 Theranos Inc Integrated health data capture and analysis system
US9202954B2 (en) * 2010-03-03 2015-12-01 Q1 Nanosystems Corporation Nanostructure and photovoltaic cell implementing same
US8878055B2 (en) 2010-08-09 2014-11-04 International Business Machines Corporation Efficient nanoscale solar cell and fabrication method
US9231133B2 (en) 2010-09-10 2016-01-05 International Business Machines Corporation Nanowires formed by employing solder nanodots
US8502307B2 (en) * 2010-11-24 2013-08-06 Infineon Technologies Ag Vertical power semiconductor carrier having laterally isolated circuit areas
CN106290160A (zh) 2011-01-21 2017-01-04 提拉诺斯公司 样品使用最大化的系统和方法
AU2012243039B2 (en) 2011-04-08 2017-07-13 Immune Design Corp. Immunogenic compositions and methods of using the compositions for inducing humoral and cellular immune responses
US8628996B2 (en) 2011-06-15 2014-01-14 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
US8731017B2 (en) 2011-08-12 2014-05-20 Acorn Technologies, Inc. Tensile strained semiconductor photon emission and detection devices and integrated photonics system
US8685858B2 (en) * 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
US20130134546A1 (en) 2011-11-30 2013-05-30 International Business Machines Corporation High density multi-electrode array
CN104363892A (zh) 2012-02-07 2015-02-18 传染性疾病研究院 包含tlr4激动剂的改进佐剂制剂及其使用方法
RS57420B1 (sr) 2012-05-16 2018-09-28 Immune Design Corp Vakcine za hsv-2
CN103633196A (zh) * 2012-08-29 2014-03-12 大连美明外延片科技有限公司 一种GaN基LED透明电极图形化的制备方法
US9082911B2 (en) 2013-01-28 2015-07-14 Q1 Nanosystems Corporation Three-dimensional metamaterial device with photovoltaic bristles
US20140264998A1 (en) 2013-03-14 2014-09-18 Q1 Nanosystems Corporation Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles
US9954126B2 (en) 2013-03-14 2018-04-24 Q1 Nanosystems Corporation Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
CA2909221A1 (en) 2013-04-18 2014-10-23 Immune Design Corp. Gla monotherapy for use in cancer treatment
JP2014216041A (ja) * 2013-04-30 2014-11-17 ソニー株式会社 メモリ装置およびメモリ管理方法
US9463198B2 (en) 2013-06-04 2016-10-11 Infectious Disease Research Institute Compositions and methods for reducing or preventing metastasis
FR3011381B1 (fr) * 2013-09-30 2017-12-08 Aledia Dispositif optoelectronique a diodes electroluminescentes
US20160030459A1 (en) 2014-01-21 2016-02-04 Immune Design Corp. Compositions and methods for treating allergic conditions
MY197896A (en) * 2014-05-21 2023-07-24 Mimos Berhad Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof
EP3147954A1 (de) * 2015-09-22 2017-03-29 Nokia Technologies Oy Fotodetektor mit leitfähigem kanal aus einem zweidimensionalen material und dessen herstellungsverfahren
CN109562057A (zh) 2016-05-16 2019-04-02 传染病研究所 聚乙二醇化脂质体和使用方法
IL314130A (en) 2016-05-16 2024-09-01 Access To Advanced Health Inst Formulation containing a TLR agonist and methods of use
BR112018074352B1 (pt) 2016-06-01 2021-11-30 Infectious Disease Research Institute Partículas de nanoalume contendo um agente de dimensionamento
FR3066297B1 (fr) * 2017-05-11 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif quantique a qubits de spin
CA3066915A1 (en) 2017-06-11 2018-12-20 Molecular Express, Inc. Methods and compositions for substance use disorder vaccine formulations and uses thereof
JP6911812B2 (ja) 2018-06-06 2021-07-28 信越半導体株式会社 陽極酸化装置、陽極酸化方法及び陽極酸化装置の陰極の製造方法
US20240050561A1 (en) 2020-12-23 2024-02-15 Access To Advanced Health Institute Solanesol vaccine adjuvants and methods of preparing same

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774720A (en) * 1980-10-29 1982-05-11 Nippon Sheet Glass Co Ltd Optoelectronic element
DE3210086A1 (de) * 1982-03-19 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode, geeignet als drucksensor
JPS58213482A (ja) * 1982-06-04 1983-12-12 Omron Tateisi Electronics Co 光結合装置
JPS59205774A (ja) * 1983-05-09 1984-11-21 Nec Corp 半導体発光素子
GB8927709D0 (en) * 1989-12-07 1990-02-07 Secretary Of The State For Def Silicon quantum wires
US5362972A (en) * 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
US5110760A (en) * 1990-09-28 1992-05-05 The United States Of America As Represented By The Secretary Of The Navy Method of nanometer lithography
US5102832A (en) * 1991-02-11 1992-04-07 Micron Technology, Inc. Methods for texturizing polysilicon
US5112773A (en) * 1991-04-10 1992-05-12 Micron Technology, Inc. Methods for texturizing polysilicon utilizing gas phase nucleation
US5244842A (en) * 1991-12-17 1993-09-14 Micron Technology, Inc. Method of increasing capacitance by surface roughening in semiconductor wafer processing
US5256587A (en) * 1991-03-20 1993-10-26 Goldstar Electron Co., Ltd. Methods of patterning and manufacturing semiconductor devices
JP3306077B2 (ja) * 1991-03-28 2002-07-24 科学技術振興事業団 多孔質シリコン発光素子と多孔質シリコン受光素子ならびにそれらの製造方法
JP3106569B2 (ja) * 1991-07-30 2000-11-06 株式会社デンソー 発光素子
JP3216153B2 (ja) * 1991-07-30 2001-10-09 株式会社デンソー 光検出器
JPH0537013A (ja) * 1991-07-30 1993-02-12 Nippondenso Co Ltd 注入形発光素子及びその製造方法
KR940007391B1 (ko) * 1991-08-23 1994-08-16 삼성전자 주식회사 고집적 반도체 메모리장치의 제조방법
JPH0555545A (ja) * 1991-08-27 1993-03-05 Matsushita Electric Ind Co Ltd 量子素子の製造方法
JPH0555627A (ja) * 1991-08-27 1993-03-05 Nippondenso Co Ltd 注入形発光素子
JP3243303B2 (ja) * 1991-10-28 2002-01-07 ゼロックス・コーポレーション 量子閉じ込め半導体発光素子及びその製造方法
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
JPH05206514A (ja) * 1992-01-24 1993-08-13 Nippon Steel Corp 発光素子
JPH05251725A (ja) * 1992-03-05 1993-09-28 Sumitomo Electric Ind Ltd シリコン半導体受光素子とその作製方法
US5204280A (en) * 1992-04-09 1993-04-20 International Business Machines Corporation Process for fabricating multiple pillars inside a dram trench for increased capacitor surface
JPH0620958A (ja) * 1992-04-10 1994-01-28 Internatl Business Mach Corp <Ibm> 粗いシリコン表面の形成およびその応用
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
JP2697474B2 (ja) * 1992-04-30 1998-01-14 松下電器産業株式会社 微細構造の製造方法
US5240558A (en) * 1992-10-27 1993-08-31 Motorola, Inc. Method for forming a semiconductor device
US5308786A (en) * 1993-09-27 1994-05-03 United Microelectronics Corporation Trench isolation for both large and small areas by means of silicon nodules after metal etching
US5466626A (en) * 1993-12-16 1995-11-14 International Business Machines Corporation Micro mask comprising agglomerated material
US5427974A (en) * 1994-03-18 1995-06-27 United Microelectronics Corporation Method for forming a capacitor in a DRAM cell using a rough overlayer of tungsten
US5440421A (en) * 1994-05-10 1995-08-08 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps

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US6033928A (en) 2000-03-07
DE69433694D1 (de) 2004-05-13
EP0892444B1 (de) 2004-04-21
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EP0893834B1 (de) 2004-04-07
EP0652600A1 (de) 1995-05-10
EP0893834A2 (de) 1999-01-27
US6087197A (en) 2000-07-11
DE69434745D1 (de) 2006-06-29
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EP0895293B1 (de) 2006-06-14
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DE69433695D1 (de) 2004-05-13
DE69433728T2 (de) 2004-09-30
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US6177291B1 (en) 2001-01-23
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US6489629B1 (en) 2002-12-03
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