MY197896A - Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof - Google Patents

Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof

Info

Publication number
MY197896A
MY197896A MYPI2014701323A MYPI2014701323A MY197896A MY 197896 A MY197896 A MY 197896A MY PI2014701323 A MYPI2014701323 A MY PI2014701323A MY PI2014701323 A MYPI2014701323 A MY PI2014701323A MY 197896 A MY197896 A MY 197896A
Authority
MY
Malaysia
Prior art keywords
nanostructures
isfet
ion
effect transistor
fabrication method
Prior art date
Application number
MYPI2014701323A
Inventor
Bien Chia Sheng Daniel
Anuar Bin Abd Wahid Khairul
Aniq Shazni Bin Mohammad Haniff Muhammad
Mai Woon Lee
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Priority to MYPI2014701323A priority Critical patent/MY197896A/en
Priority to PCT/MY2015/000033 priority patent/WO2015178755A1/en
Publication of MY197896A publication Critical patent/MY197896A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Abstract

Disclosed herein is an ion-sensitive field-effect transistor (ISFET) (100) having nanostructures (109) for sensing ions and measuring ion concentration in solutions. In general, the base layer (101) at the sensing region of the ISFET (100) is etched to form the nanostructures (109). Each of the nanostructures (109) has a diameter of less than 100nm, and the nanostructures (109) have a distance of less than 100nm from each other. The nanostructures (109) are nanopillars with cylindrical shape, needle-like shape, or a combination thereof. Due to all these particular features, the surface area of the ISFET (100) that is exposed to ions is increased, and therefore the sensitivity and efficiency of the ISFET (100) are improved. Also disclosed herein is a fabrication method thereof.
MYPI2014701323A 2014-05-21 2014-05-21 Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof MY197896A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MYPI2014701323A MY197896A (en) 2014-05-21 2014-05-21 Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof
PCT/MY2015/000033 WO2015178755A1 (en) 2014-05-21 2015-05-13 Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2014701323A MY197896A (en) 2014-05-21 2014-05-21 Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof

Publications (1)

Publication Number Publication Date
MY197896A true MY197896A (en) 2023-07-24

Family

ID=54554333

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014701323A MY197896A (en) 2014-05-21 2014-05-21 Ion-sensitive field-effect transistor (isfet) with nanostructures and fabrication method thereof

Country Status (2)

Country Link
MY (1) MY197896A (en)
WO (1) WO2015178755A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69434767T2 (en) * 1993-11-02 2006-11-09 Matsushita Electric Industrial Co., Ltd., Kadoma Semiconductor device with aggregate of micro-needles of semiconductor material
JP2000173444A (en) * 1998-12-04 2000-06-23 Agency Of Ind Science & Technol Electric field emitting type cold negative electrode, and its manufacture
JP2004258169A (en) * 2003-02-25 2004-09-16 Alps Electric Co Ltd Optical deflection element and optical switch using the same
EP2174122A2 (en) * 2007-06-08 2010-04-14 Bharath R Takulapalli Nano structured field effect sensor and methods of forming and using same

Also Published As

Publication number Publication date
WO2015178755A1 (en) 2015-11-26

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