US5795495A
(en)
*
|
1994-04-25 |
1998-08-18 |
Micron Technology, Inc. |
Method of chemical mechanical polishing for dielectric layers
|
US5447884A
(en)
*
|
1994-06-29 |
1995-09-05 |
International Business Machines Corporation |
Shallow trench isolation with thin nitride liner
|
US5459096A
(en)
*
|
1994-07-05 |
1995-10-17 |
Motorola Inc. |
Process for fabricating a semiconductor device using dual planarization layers
|
JP3304621B2
(ja)
*
|
1994-07-29 |
2002-07-22 |
三菱電機株式会社 |
半導体装置の製造方法
|
US5786263A
(en)
*
|
1995-04-04 |
1998-07-28 |
Motorola, Inc. |
Method for forming a trench isolation structure in an integrated circuit
|
US5665633A
(en)
|
1995-04-06 |
1997-09-09 |
Motorola, Inc. |
Process for forming a semiconductor device having field isolation
|
KR0151051B1
(ko)
*
|
1995-05-30 |
1998-12-01 |
김광호 |
반도체장치의 절연막 형성방법
|
KR100208449B1
(ko)
*
|
1995-06-24 |
1999-07-15 |
김영환 |
반도체 소자의 제조방법
|
US5985735A
(en)
*
|
1995-09-29 |
1999-11-16 |
Intel Corporation |
Trench isolation process using nitrogen preconditioning to reduce crystal defects
|
KR0179807B1
(ko)
*
|
1995-12-30 |
1999-03-20 |
문정환 |
반도체 기억소자 제조방법
|
US5861104A
(en)
*
|
1996-03-28 |
1999-01-19 |
Advanced Micro Devices |
Trench isolation with rounded top and bottom corners and edges
|
US5811347A
(en)
*
|
1996-04-29 |
1998-09-22 |
Advanced Micro Devices, Inc. |
Nitrogenated trench liner for improved shallow trench isolation
|
US6091129A
(en)
*
|
1996-06-19 |
2000-07-18 |
Cypress Semiconductor Corporation |
Self-aligned trench isolated structure
|
US5851899A
(en)
*
|
1996-08-08 |
1998-12-22 |
Siemens Aktiengesellschaft |
Gapfill and planarization process for shallow trench isolation
|
US6033943A
(en)
*
|
1996-08-23 |
2000-03-07 |
Advanced Micro Devices, Inc. |
Dual gate oxide thickness integrated circuit and process for making same
|
KR100389911B1
(ko)
*
|
1996-09-13 |
2003-09-19 |
삼성전자주식회사 |
트렌치 소자 분리 방법
|
US5834358A
(en)
*
|
1996-11-12 |
1998-11-10 |
Micron Technology, Inc. |
Isolation regions and methods of forming isolation regions
|
US5858866A
(en)
*
|
1996-11-22 |
1999-01-12 |
International Business Machines Corportation |
Geometrical control of device corner threshold
|
KR100216267B1
(ko)
*
|
1996-12-26 |
1999-08-16 |
구본준 |
트렌치 격리구조를 갖는 반도체 장치 제조방법
|
US5780346A
(en)
|
1996-12-31 |
1998-07-14 |
Intel Corporation |
N2 O nitrided-oxide trench sidewalls and method of making isolation structure
|
US6322634B1
(en)
|
1997-01-27 |
2001-11-27 |
Micron Technology, Inc. |
Shallow trench isolation structure without corner exposure
|
US5763315A
(en)
*
|
1997-01-28 |
1998-06-09 |
International Business Machines Corporation |
Shallow trench isolation with oxide-nitride/oxynitride liner
|
US6097076A
(en)
*
|
1997-03-25 |
2000-08-01 |
Micron Technology, Inc. |
Self-aligned isolation trench
|
DE69824368T2
(de)
*
|
1997-04-07 |
2005-06-16 |
Koninklijke Philips Electronics N.V. |
Herstellungsverfahren einer halbleitervorrichtung mit flacher grabenisolation
|
EP0872884A1
(de)
*
|
1997-04-14 |
1998-10-21 |
Harris Corporation |
Verfahren und Halbleitereinrichtung mit maximaler Terminalspannung
|
US6051510A
(en)
*
|
1997-05-02 |
2000-04-18 |
Advanced Micro Devices, Inc. |
Method of using a hard mask to grow dielectrics with varying characteristics
|
US6037224A
(en)
*
|
1997-05-02 |
2000-03-14 |
Advanced Micro Devices, Inc. |
Method for growing dual oxide thickness using nitrided oxides for oxidation suppression
|
JPH10335652A
(ja)
*
|
1997-05-30 |
1998-12-18 |
Hitachi Ltd |
半導体集積回路装置の製造方法
|
JP3063686B2
(ja)
*
|
1997-06-13 |
2000-07-12 |
日本電気株式会社 |
半導体装置の製造方法
|
KR100444310B1
(ko)
*
|
1997-06-28 |
2004-11-06 |
주식회사 하이닉스반도체 |
반도체소자의소자분리막제조방법
|
JP3583583B2
(ja)
*
|
1997-07-08 |
2004-11-04 |
株式会社東芝 |
半導体装置及びその製造方法
|
US6566224B1
(en)
|
1997-07-31 |
2003-05-20 |
Agere Systems, Inc. |
Process for device fabrication
|
US5837612A
(en)
*
|
1997-08-01 |
1998-11-17 |
Motorola, Inc. |
Silicon chemical mechanical polish etch (CMP) stop for reduced trench fill erosion and method for formation
|
US5869359A
(en)
*
|
1997-08-20 |
1999-02-09 |
Prabhakar; Venkatraman |
Process for forming silicon on insulator devices having elevated source and drain regions
|
US5854121A
(en)
*
|
1997-09-04 |
1998-12-29 |
Advanced Micro Devices, Inc. |
Semiconductor fabrication employing barrier atoms incorporated at the edges of a trench isolation structure
|
US6014182A
(en)
*
|
1997-10-10 |
2000-01-11 |
Faroudja Laboratories, Inc. |
Film source video detection
|
US6130467A
(en)
*
|
1997-12-18 |
2000-10-10 |
Advanced Micro Devices, Inc. |
Shallow trench isolation with spacers for improved gate oxide quality
|
US6063691A
(en)
*
|
1997-12-29 |
2000-05-16 |
Lg Semicon Co., Ltd. |
Shallow trench isolation (STI) fabrication method for semiconductor device
|
US6960818B1
(en)
*
|
1997-12-30 |
2005-11-01 |
Siemens Aktiengesellschaft |
Recessed shallow trench isolation structure nitride liner and method for making same
|
US6143663A
(en)
*
|
1998-01-22 |
2000-11-07 |
Cypress Semiconductor Corporation |
Employing deionized water and an abrasive surface to polish a semiconductor topography
|
US6200896B1
(en)
|
1998-01-22 |
2001-03-13 |
Cypress Semiconductor Corporation |
Employing an acidic liquid and an abrasive surface to polish a semiconductor topography
|
US6054343A
(en)
*
|
1998-01-26 |
2000-04-25 |
Texas Instruments Incorporated |
Nitride trench fill process for increasing shallow trench isolation (STI) robustness
|
US6153478A
(en)
*
|
1998-01-28 |
2000-11-28 |
United Microelectronics Corp. |
STI process for eliminating kink effect
|
KR19990072936A
(ko)
*
|
1998-02-27 |
1999-09-27 |
가나이 쓰도무 |
아이솔레이터및그것을사용하는모뎀장치
|
US6107157A
(en)
|
1998-02-27 |
2000-08-22 |
Micron Technology, Inc. |
Method and apparatus for trench isolation process with pad gate and trench edge spacer elimination
|
KR100275908B1
(ko)
*
|
1998-03-02 |
2000-12-15 |
윤종용 |
집적 회로에 트렌치 아이솔레이션을 형성하는방법
|
US6169011B1
(en)
|
1998-03-24 |
2001-01-02 |
Sharp Laboratories Of America, Inc. |
Trench isolation structure and method for same
|
US6171180B1
(en)
|
1998-03-31 |
2001-01-09 |
Cypress Semiconductor Corporation |
Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surface
|
US6727569B1
(en)
|
1998-04-21 |
2004-04-27 |
Advanced Micro Devices, Inc. |
Method of making enhanced trench oxide with low temperature nitrogen integration
|
US6137152A
(en)
*
|
1998-04-22 |
2000-10-24 |
Texas Instruments - Acer Incorporated |
Planarized deep-shallow trench isolation for CMOS/bipolar devices
|
US6153480A
(en)
*
|
1998-05-08 |
2000-11-28 |
Intel Coroporation |
Advanced trench sidewall oxide for shallow trench technology
|
US6069057A
(en)
*
|
1998-05-18 |
2000-05-30 |
Powerchip Semiconductor Corp. |
Method for fabricating trench-isolation structure
|
KR100275732B1
(ko)
*
|
1998-05-22 |
2000-12-15 |
윤종용 |
어닐링을 이용한 트랜치형 소자분리막 형성방법
|
US6146970A
(en)
*
|
1998-05-26 |
2000-11-14 |
Motorola Inc. |
Capped shallow trench isolation and method of formation
|
KR100283469B1
(ko)
*
|
1998-06-08 |
2001-04-02 |
윤종용 |
반도체소자제조방법
|
US6352940B1
(en)
*
|
1998-06-26 |
2002-03-05 |
Intel Corporation |
Semiconductor passivation deposition process for interfacial adhesion
|
US5976951A
(en)
*
|
1998-06-30 |
1999-11-02 |
United Microelectronics Corp. |
Method for preventing oxide recess formation in a shallow trench isolation
|
US6355540B2
(en)
*
|
1998-07-27 |
2002-03-12 |
Acer Semicondutor Manufacturing Inc. |
Stress-free shallow trench isolation
|
US6518145B1
(en)
|
1998-08-06 |
2003-02-11 |
International Business Machines Corporation |
Methods to control the threshold voltage of a deep trench corner device
|
US6787471B2
(en)
*
|
1998-08-26 |
2004-09-07 |
Renesas Technology Corp. |
Method of manufacturing a semiconductor device
|
US6534378B1
(en)
|
1998-08-31 |
2003-03-18 |
Cypress Semiconductor Corp. |
Method for forming an integrated circuit device
|
US5972124A
(en)
|
1998-08-31 |
1999-10-26 |
Advanced Micro Devices, Inc. |
Method for cleaning a surface of a dielectric material
|
US6232231B1
(en)
|
1998-08-31 |
2001-05-15 |
Cypress Semiconductor Corporation |
Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect
|
US5998848A
(en)
*
|
1998-09-18 |
1999-12-07 |
International Business Machines Corporation |
Depleted poly-silicon edged MOSFET structure and method
|
US6319794B1
(en)
*
|
1998-10-14 |
2001-11-20 |
International Business Machines Corporation |
Structure and method for producing low leakage isolation devices
|
US6218720B1
(en)
|
1998-10-21 |
2001-04-17 |
Advanced Micro Devices, Inc. |
Semiconductor topography employing a nitrogenated shallow trench isolation structure
|
US6127215A
(en)
|
1998-10-29 |
2000-10-03 |
International Business Machines Corp. |
Deep pivot mask for enhanced buried-channel PFET performance and reliability
|
US6566249B1
(en)
|
1998-11-09 |
2003-05-20 |
Cypress Semiconductor Corp. |
Planarized semiconductor interconnect topography and method for polishing a metal layer to form wide interconnect structures
|
GB2344689A
(en)
|
1998-12-07 |
2000-06-14 |
Ericsson Telefon Ab L M |
Analogue switch
|
KR100366619B1
(ko)
*
|
1999-05-12 |
2003-01-09 |
삼성전자 주식회사 |
트랜치 소자분리방법, 트랜치를 포함하는 반도체소자의제조방법 및 그에 따라 제조된 반도체소자
|
US6255194B1
(en)
*
|
1999-06-03 |
2001-07-03 |
Samsung Electronics Co., Ltd. |
Trench isolation method
|
US6524931B1
(en)
|
1999-07-20 |
2003-02-25 |
Motorola, Inc. |
Method for forming a trench isolation structure in an integrated circuit
|
JP2001118919A
(ja)
*
|
1999-10-15 |
2001-04-27 |
Seiko Epson Corp |
半導体装置およびその製造方法
|
US6207513B1
(en)
*
|
1999-11-02 |
2001-03-27 |
Infineon Technologies North America Corp. |
Spacer process to eliminate corner transistor device
|
US6420749B1
(en)
|
2000-06-23 |
2002-07-16 |
International Business Machines Corporation |
Trench field shield in trench isolation
|
US6368970B1
(en)
*
|
2000-08-24 |
2002-04-09 |
Infineon Technologies Ag |
Semiconductor configuration and corresponding production process
|
JPWO2002073697A1
(ja)
*
|
2001-03-12 |
2004-07-08 |
株式会社ルネサステクノロジ |
半導体集積回路装置およびその製造方法
|
US7049187B2
(en)
*
|
2001-03-12 |
2006-05-23 |
Renesas Technology Corp. |
Manufacturing method of polymetal gate electrode
|
US6969684B1
(en)
|
2001-04-30 |
2005-11-29 |
Cypress Semiconductor Corp. |
Method of making a planarized semiconductor structure
|
US7267037B2
(en)
|
2001-05-05 |
2007-09-11 |
David Walter Smith |
Bidirectional singulation saw and method
|
KR100449318B1
(ko)
*
|
2001-12-20 |
2004-09-18 |
동부전자 주식회사 |
반도체 장치의 소자 분리막 형성방법
|
US6828678B1
(en)
|
2002-03-29 |
2004-12-07 |
Silicon Magnetic Systems |
Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer
|
KR100881847B1
(ko)
|
2002-12-28 |
2009-02-03 |
동부일렉트로닉스 주식회사 |
반도체 메모리 소자의 제조 방법
|
US6821857B1
(en)
|
2003-06-10 |
2004-11-23 |
International Business Machines Corporation |
High on-current device for high performance embedded DRAM (eDRAM) and method of forming the same
|
JP2005101141A
(ja)
*
|
2003-09-24 |
2005-04-14 |
Renesas Technology Corp |
半導体集積回路装置およびその製造方法
|
US7371637B2
(en)
*
|
2003-09-26 |
2008-05-13 |
Cypress Semiconductor Corporation |
Oxide-nitride stack gate dielectric
|
US7112513B2
(en)
*
|
2004-02-19 |
2006-09-26 |
Micron Technology, Inc. |
Sub-micron space liner and densification process
|
US20050189608A1
(en)
*
|
2004-02-26 |
2005-09-01 |
Erh-Kun Lai |
[shallow trench isolation and method of forming the same]
|
US7271464B2
(en)
*
|
2004-08-24 |
2007-09-18 |
Micron Technology, Inc. |
Liner for shallow trench isolation
|
US7279393B2
(en)
*
|
2004-09-29 |
2007-10-09 |
Agere Systems Inc. |
Trench isolation structure and method of manufacture therefor
|
US7271463B2
(en)
|
2004-12-10 |
2007-09-18 |
Micron Technology, Inc. |
Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
|
JP2010027904A
(ja)
*
|
2008-07-22 |
2010-02-04 |
Elpida Memory Inc |
半導体装置の製造方法
|
CN102104040B
(zh)
*
|
2009-12-18 |
2013-01-16 |
和舰科技(苏州)有限公司 |
具有浅槽隔离结构的半导体器件及其制造方法
|
EP2495762B1
(de)
*
|
2011-03-03 |
2017-11-01 |
IMEC vzw |
Verfahren zur Herstellung einer Floating-Gate-Halbleiterspeichervorrichtung
|
US8603895B1
(en)
*
|
2012-09-11 |
2013-12-10 |
Globalfoundries Inc. |
Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequence
|
CN110010575B
(zh)
*
|
2018-12-25 |
2021-03-30 |
浙江集迈科微电子有限公司 |
一种栓塞互联式的tsv结构及其制作方法
|