DE69429146T2 - DRAM-Zellenstruktur mit Grabenkondensator - Google Patents
DRAM-Zellenstruktur mit GrabenkondensatorInfo
- Publication number
- DE69429146T2 DE69429146T2 DE69429146T DE69429146T DE69429146T2 DE 69429146 T2 DE69429146 T2 DE 69429146T2 DE 69429146 T DE69429146 T DE 69429146T DE 69429146 T DE69429146 T DE 69429146T DE 69429146 T2 DE69429146 T2 DE 69429146T2
- Authority
- DE
- Germany
- Prior art keywords
- trench
- film
- conductive layer
- conductive
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 99
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 54
- 235000012239 silicon dioxide Nutrition 0.000 claims description 49
- 239000000377 silicon dioxide Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 6
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 description 53
- 229910052681 coesite Inorganic materials 0.000 description 47
- 229910052906 cristobalite Inorganic materials 0.000 description 47
- 229910052682 stishovite Inorganic materials 0.000 description 47
- 229910052905 tridymite Inorganic materials 0.000 description 47
- 239000010410 layer Substances 0.000 description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 7
- 235000011007 phosphoric acid Nutrition 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000012062 aqueous buffer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001648319 Toronia toru Species 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22995693A JP3480745B2 (ja) | 1993-09-16 | 1993-09-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69429146D1 DE69429146D1 (de) | 2002-01-03 |
| DE69429146T2 true DE69429146T2 (de) | 2002-07-18 |
Family
ID=16900348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69429146T Expired - Lifetime DE69429146T2 (de) | 1993-09-16 | 1994-09-16 | DRAM-Zellenstruktur mit Grabenkondensator |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6100130A (enExample) |
| EP (1) | EP0644591B1 (enExample) |
| JP (1) | JP3480745B2 (enExample) |
| KR (1) | KR100226591B1 (enExample) |
| DE (1) | DE69429146T2 (enExample) |
| TW (1) | TW262586B (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6207494B1 (en) * | 1994-12-29 | 2001-03-27 | Infineon Technologies Corporation | Isolation collar nitride liner for DRAM process improvement |
| EP0735581A1 (en) * | 1995-03-30 | 1996-10-02 | Siemens Aktiengesellschaft | DRAM trench capacitor with insulating collar |
| US5656535A (en) * | 1996-03-04 | 1997-08-12 | Siemens Aktiengesellschaft | Storage node process for deep trench-based DRAM |
| US5717628A (en) * | 1996-03-04 | 1998-02-10 | Siemens Aktiengesellschaft | Nitride cap formation in a DRAM trench capacitor |
| US6008103A (en) * | 1998-02-27 | 1999-12-28 | Siemens Aktiengesellschaft | Method for forming trench capacitors in an integrated circuit |
| TW409408B (en) * | 1998-03-31 | 2000-10-21 | Siemens Ag | Method and apparatus having improved control of a buried strap in trench capacitors |
| US6281068B1 (en) * | 1998-04-30 | 2001-08-28 | International Business Machines Corporation | Method for buried plate formation in deep trench capacitors |
| GB2341483B (en) * | 1998-09-11 | 2003-10-01 | Siemens Plc | Improved process for dram cell production |
| DE19842665C2 (de) * | 1998-09-17 | 2001-10-11 | Infineon Technologies Ag | Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen |
| DE19843641A1 (de) | 1998-09-23 | 2000-04-20 | Siemens Ag | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
| TW429613B (en) * | 1999-10-21 | 2001-04-11 | Mosel Vitelic Inc | Dynamic random access memory with trench type capacitor |
| DE19957123B4 (de) * | 1999-11-26 | 2006-11-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Zellenanordnung für einen dynamischen Halbleiterspeicher |
| US6437381B1 (en) * | 2000-04-27 | 2002-08-20 | International Business Machines Corporation | Semiconductor memory device with reduced orientation-dependent oxidation in trench structures |
| US6309924B1 (en) * | 2000-06-02 | 2001-10-30 | International Business Machines Corporation | Method of forming self-limiting polysilicon LOCOS for DRAM cell |
| US6376324B1 (en) * | 2000-06-23 | 2002-04-23 | International Business Machines Corporation | Collar process for reduced deep trench edge bias |
| TW466684B (en) * | 2000-09-29 | 2001-12-01 | United Microelectronics Corp | Method for forming deep trench capacitor under shallow trench isolation structure |
| DE10142580B4 (de) | 2001-08-31 | 2006-07-13 | Infineon Technologies Ag | Verfahren zur Herstellung einer Grabenstrukturkondensatoreinrichtung |
| JP2003179148A (ja) * | 2001-10-04 | 2003-06-27 | Denso Corp | 半導体基板およびその製造方法 |
| US7005338B2 (en) * | 2002-09-19 | 2006-02-28 | Promos Technologies Inc. | Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate |
| US20050176198A1 (en) * | 2004-02-11 | 2005-08-11 | Kudelka Stephan P. | Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop |
| JP2006210512A (ja) * | 2005-01-26 | 2006-08-10 | Toshiba Corp | 半導体装置、及び、半導体装置の製造方法 |
| US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
| US8106511B2 (en) * | 2008-02-28 | 2012-01-31 | Qimonda Ag | Reduced-stress through-chip feature and method of making the same |
| EP2568547B1 (de) | 2011-09-06 | 2014-04-16 | Leica Geosystems AG | Monitordiodenloser Lasertreiber |
| US8642423B2 (en) * | 2011-11-30 | 2014-02-04 | International Business Machines Corporation | Polysilicon/metal contact resistance in deep trench |
| US9960168B2 (en) | 2014-12-24 | 2018-05-01 | Globalfoundries Inc. | Capacitor strap connection structure and fabrication method |
| US9818741B2 (en) | 2015-06-30 | 2017-11-14 | International Business Machines Corporation | Structure and method to prevent EPI short between trenches in FINFET eDRAM |
| KR102873018B1 (ko) * | 2024-05-20 | 2025-10-17 | 김동규 | 앵글구조체를 이용하여 공간 활용성을 향상시킨 건축 구조물 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60152058A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | 半導体記憶装置 |
| US4801989A (en) * | 1986-02-20 | 1989-01-31 | Fujitsu Limited | Dynamic random access memory having trench capacitor with polysilicon lined lower electrode |
| JPH0797621B2 (ja) | 1986-03-03 | 1995-10-18 | 富士通株式会社 | ダイナミツクランダムアクセスメモリ |
| US4801988A (en) * | 1986-10-31 | 1989-01-31 | International Business Machines Corporation | Semiconductor trench capacitor cell with merged isolation and node trench construction |
| US4918502A (en) * | 1986-11-28 | 1990-04-17 | Hitachi, Ltd. | Semiconductor memory having trench capacitor formed with sheath electrode |
| JPS6427252A (en) * | 1987-04-13 | 1989-01-30 | Nec Corp | Semiconductor storage device |
| JPS63258060A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体記憶装置 |
| US4794434A (en) * | 1987-07-06 | 1988-12-27 | Motorola, Inc. | Trench cell for a dram |
| JPH01192157A (ja) * | 1988-01-27 | 1989-08-02 | Nec Corp | 半導体装置 |
| JPH025467A (ja) | 1988-06-23 | 1990-01-10 | Texas Instr Japan Ltd | 半導体装置 |
| JPH029166A (ja) * | 1988-06-28 | 1990-01-12 | Oki Electric Ind Co Ltd | 半導体メモリ装置 |
| KR910001985B1 (ko) | 1988-09-22 | 1991-03-30 | 현대전자산업 주식회사 | Sdht 구조로 이루어진 트렌치 캐패시터 셀 및 그 제조방법 |
| US5017506A (en) * | 1989-07-25 | 1991-05-21 | Texas Instruments Incorporated | Method for fabricating a trench DRAM |
| JP3208153B2 (ja) | 1991-07-03 | 2001-09-10 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH0563155A (ja) | 1991-08-30 | 1993-03-12 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
| JP2994110B2 (ja) * | 1991-09-09 | 1999-12-27 | 株式会社東芝 | 半導体記憶装置 |
| JPH0637275A (ja) * | 1992-07-13 | 1994-02-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| US5422294A (en) * | 1993-05-03 | 1995-06-06 | Noble, Jr.; Wendell P. | Method of making a trench capacitor field shield with sidewall contact |
| US5406515A (en) * | 1993-12-01 | 1995-04-11 | International Business Machines Corporation | Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby |
-
1993
- 1993-09-16 JP JP22995693A patent/JP3480745B2/ja not_active Expired - Lifetime
-
1994
- 1994-09-12 KR KR1019940022882A patent/KR100226591B1/ko not_active Expired - Fee Related
- 1994-09-16 DE DE69429146T patent/DE69429146T2/de not_active Expired - Lifetime
- 1994-09-16 EP EP94114596A patent/EP0644591B1/en not_active Expired - Lifetime
- 1994-10-20 TW TW083109729A patent/TW262586B/zh not_active IP Right Cessation
-
1997
- 1997-04-04 US US08/825,993 patent/US6100130A/en not_active Expired - Lifetime
-
2000
- 2000-02-04 US US09/497,690 patent/US6534814B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR950010090A (ko) | 1995-04-26 |
| US6100130A (en) | 2000-08-08 |
| US20020072183A1 (en) | 2002-06-13 |
| DE69429146D1 (de) | 2002-01-03 |
| KR100226591B1 (ko) | 1999-10-15 |
| EP0644591A1 (en) | 1995-03-22 |
| JPH0786432A (ja) | 1995-03-31 |
| EP0644591B1 (en) | 2001-11-21 |
| TW262586B (enExample) | 1995-11-11 |
| JP3480745B2 (ja) | 2003-12-22 |
| US6534814B2 (en) | 2003-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69429146T2 (de) | DRAM-Zellenstruktur mit Grabenkondensator | |
| DE3780840T2 (de) | Einen rillenkondensator enthaltender dynamischer speicher mit wahlfreiem zugriff. | |
| US5821629A (en) | Buried structure SRAM cell and methods for fabrication | |
| DE3880750T2 (de) | Vertikale Transistor-/Kapazitätspeicherzellen-Struktur und Herstellungsverfahren dafür. | |
| DE3851649T2 (de) | Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff. | |
| DE69431867T2 (de) | Selbstausgerichtes vergrabenes Band für DRAM Grabenzellen | |
| DE69100789T2 (de) | Verfahren zur Herstellung einer Mesatransistor-Grabenkondensator-Speicherzellenstruktur. | |
| DE102004041066A1 (de) | Hochintegriertes Halbleiterbauelement mit Silicidschicht und zugehöriges Herstellungsverfahren | |
| DE3525418A1 (de) | Halbleiterspeichereinrichtung und verfahren zu ihrer herstellung | |
| DE10153765A1 (de) | Verfahren zur Herstellung einer Dram-Zelle mit einem tiefen Graben | |
| EP0971414A1 (de) | Grabenkondensator mit Isolationskragen und vergrabenen Kontakt und entsprechendes Herstellungsverfahren | |
| DE10116529B4 (de) | Verfahren zur Herstellung von Kondensatoren mit tiefen Gräben für Drams mit verringerter Facettierung an der Substratkante, und zur Bereitstellung einer gleichförmigeren Anschlussflächenschicht aus SI3N4 über das Substrat | |
| DE3437512A1 (de) | Integrierte halbleiterschaltung und verfahren zu ihrer herstellung | |
| DE3887823T2 (de) | Halbleiterspeicher. | |
| DE3202608A1 (de) | Verfahren zur herstellung einer schottky-sperrschichtdiode und danach hergestellte sperrschichtdiode | |
| EP0875937A2 (de) | DRAM-Zellenanordnung und Verfahren zu deren Herstellung | |
| DE19921110A1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
| DE19615692C2 (de) | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitereinrichtung | |
| DE19806300C2 (de) | Halbleiteranordnung mit einem Elementisolationsbereich vom Grabentyp und ein Verfahren zu deren Herstellung | |
| DE69231653T2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit Isolierzonen | |
| DE19954867C1 (de) | DRAM-Zellenanordnung und Verfahren zu deren Herstellung | |
| DE4407532C2 (de) | DRAM-Speicherzelle und Verfahren zur Herstellung derselben | |
| DE19840385C2 (de) | Verfahren zm Isolieren von Bereichen eines integrierten Schaltkreises und Halbleiterbaustein mit integriertem Schaltkreis | |
| DE19929859A1 (de) | Trenchkondensator | |
| DE19727264A1 (de) | Halbleitervorrichtung mit einer t-förmigen Feldoxidschicht und Verfahren zu deren Herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |