DE69422915T2 - Leseverstärker-organisation - Google Patents
Leseverstärker-organisationInfo
- Publication number
- DE69422915T2 DE69422915T2 DE69422915T DE69422915T DE69422915T2 DE 69422915 T2 DE69422915 T2 DE 69422915T2 DE 69422915 T DE69422915 T DE 69422915T DE 69422915 T DE69422915 T DE 69422915T DE 69422915 T2 DE69422915 T2 DE 69422915T2
- Authority
- DE
- Germany
- Prior art keywords
- node
- transistor
- current
- sense
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008520 organization Effects 0.000 title 1
- 230000015654 memory Effects 0.000 claims description 36
- 230000001050 lubricating effect Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005461 lubrication Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 230000004044 response Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/204,866 US5390147A (en) | 1994-03-02 | 1994-03-02 | Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory |
PCT/US1994/013359 WO1995024040A1 (en) | 1994-03-02 | 1994-11-18 | Memory core organization |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69422915D1 DE69422915D1 (de) | 2000-03-09 |
DE69422915T2 true DE69422915T2 (de) | 2000-10-05 |
Family
ID=22759783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69422915T Expired - Lifetime DE69422915T2 (de) | 1994-03-02 | 1994-11-18 | Leseverstärker-organisation |
Country Status (8)
Country | Link |
---|---|
US (1) | US5390147A (ja) |
EP (1) | EP0698271B1 (ja) |
JP (1) | JP3358814B2 (ja) |
KR (1) | KR100283599B1 (ja) |
CN (1) | CN1049515C (ja) |
DE (1) | DE69422915T2 (ja) |
TW (1) | TW265486B (ja) |
WO (1) | WO1995024040A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016104987A1 (de) * | 2016-03-17 | 2017-09-21 | Infineon Technologies Ag | Speicheranordnung und Verfahren zum Lesen einer Speicherzelle eines Speichers |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5559455A (en) * | 1994-12-23 | 1996-09-24 | Lucent Technologies Inc. | Sense amplifier with overvoltage protection |
FR2734390B1 (fr) * | 1995-05-19 | 1997-06-13 | Sgs Thomson Microelectronics | Circuit de detection de courant pour la lecture d'une memoire en circuit integre |
US5666043A (en) * | 1995-06-07 | 1997-09-09 | Analog Devices, Inc. | Voltage detector with trigger based on output load currency |
US5798967A (en) * | 1997-02-22 | 1998-08-25 | Programmable Microelectronics Corporation | Sensing scheme for non-volatile memories |
DE69834313D1 (de) * | 1998-02-13 | 2006-06-01 | St Microelectronics Srl | Verbesserter Leseverstärker für nichtflüchtigen Speicher mit erweitertem Versorgungsspannungsbereich |
JP2000090682A (ja) * | 1998-09-10 | 2000-03-31 | Toshiba Corp | 半導体記憶装置 |
US6377084B2 (en) | 1999-02-22 | 2002-04-23 | Micron Technology, Inc. | Pseudo-differential amplifiers |
JP2000244322A (ja) * | 1999-02-23 | 2000-09-08 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US6307405B2 (en) | 1999-04-27 | 2001-10-23 | Micron Technology, Inc. | Current sense amplifier and current comparator with hysteresis |
US6288575B1 (en) * | 1999-08-24 | 2001-09-11 | Micron Technology, Inc. | Pseudo-differential current sense amplifier with hysteresis |
US6380787B1 (en) * | 1999-08-31 | 2002-04-30 | Micron Technology, Inc. | Integrated circuit and method for minimizing clock skews |
US6219279B1 (en) * | 1999-10-29 | 2001-04-17 | Zilog, Inc. | Non-volatile memory program driver and read reference circuits |
US6906557B1 (en) * | 2000-06-30 | 2005-06-14 | Intel Corporation | Fuse sense circuit |
TW523977B (en) | 2001-09-26 | 2003-03-11 | Macronix Int Co Ltd | Circuit and method for stability and speed enhancement for a sense amplifier |
US6903987B2 (en) | 2002-08-01 | 2005-06-07 | T-Ram, Inc. | Single data line sensing scheme for TCCT-based memory cells |
US7324394B1 (en) | 2002-08-01 | 2008-01-29 | T-Ram Semiconductor, Inc. | Single data line sensing scheme for TCCT-based memory cells |
US6775186B1 (en) * | 2003-07-03 | 2004-08-10 | Tower Semiconductor Ltd. | Low voltage sensing circuit for non-volatile memory device |
US6831866B1 (en) | 2003-08-26 | 2004-12-14 | International Business Machines Corporation | Method and apparatus for read bitline clamping for gain cell DRAM devices |
JP4683833B2 (ja) | 2003-10-31 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 機能回路及びその設計方法 |
KR100513403B1 (ko) * | 2003-11-24 | 2005-09-09 | 삼성전자주식회사 | 센스 앰프를 구비한 비휘발성 반도체 메모리 장치 |
GB2432024B (en) * | 2004-07-30 | 2008-05-07 | Spansion Llc | Semiconductor device and method for generating sense signal |
US7542322B2 (en) * | 2004-09-30 | 2009-06-02 | Intel Corporation | Buffered continuous multi-drop clock ring |
US8045390B2 (en) * | 2008-03-21 | 2011-10-25 | Macronix International Co., Ltd. | Memory system with dynamic reference cell and method of operating the same |
JP5117950B2 (ja) * | 2008-07-18 | 2013-01-16 | ラピスセミコンダクタ株式会社 | データ読出回路及び半導体記憶装置 |
CN102013267B (zh) * | 2009-09-07 | 2013-07-31 | 上海宏力半导体制造有限公司 | 存储器和灵敏放大器 |
US8509026B2 (en) | 2012-01-10 | 2013-08-13 | Ememory Technology Inc. | Word line boost circuit |
US9070425B2 (en) | 2013-10-31 | 2015-06-30 | Micron Technology, Inc. | Data line control for sense amplifiers |
CN106601278B (zh) * | 2016-12-19 | 2019-11-19 | 佛山中科芯蔚科技有限公司 | 一种灵敏放大器 |
CN111696607B (zh) | 2019-03-13 | 2022-05-17 | 力旺电子股份有限公司 | 可编程可抹除的非易失性存储器 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59218696A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体メモリ |
JPS61172300A (ja) * | 1985-01-26 | 1986-08-02 | Toshiba Corp | 半導体記憶装置 |
IT1213343B (it) * | 1986-09-12 | 1989-12-20 | Sgs Microelettronica Spa | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos. |
EP0576046B1 (en) * | 1988-06-24 | 1996-03-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US5148397A (en) * | 1989-03-16 | 1992-09-15 | Oki Electric Industry Co. Ltd. | Semiconductor memory with externally controlled dummy comparator |
US5237534A (en) * | 1989-04-27 | 1993-08-17 | Kabushiki Kaisha Toshiba | Data sense circuit for a semiconductor nonvolatile memory device |
JPH0793032B2 (ja) * | 1989-04-27 | 1995-10-09 | 日本電気株式会社 | 半導体記憶装置 |
US5293345A (en) * | 1989-06-12 | 1994-03-08 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a data detection circuit with two reference potentials |
US5198997A (en) * | 1989-08-11 | 1993-03-30 | Sony Corporation | Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier |
JPH0752592B2 (ja) * | 1989-08-18 | 1995-06-05 | 株式会社東芝 | 半導体記憶装置 |
JPH0793033B2 (ja) * | 1989-08-24 | 1995-10-09 | 日本電気株式会社 | センスアンプ |
JPH03241594A (ja) * | 1990-02-19 | 1991-10-28 | Fujitsu Ltd | 半導体メモリのセンス回路 |
IT1246241B (it) * | 1990-02-23 | 1994-11-17 | Sgs Thomson Microelectronics | Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili |
JP2586723B2 (ja) * | 1990-10-12 | 1997-03-05 | 日本電気株式会社 | センスアンプ |
EP0486743B1 (en) * | 1990-11-19 | 1996-05-08 | STMicroelectronics S.r.l. | Improved sense circuit for storage devices such as non-volatile memories, with compensated offset current |
DE69224125T2 (de) * | 1991-09-26 | 1998-08-27 | St Microelectronics Srl | Leseverstärker |
-
1994
- 1994-03-02 US US08/204,866 patent/US5390147A/en not_active Expired - Lifetime
- 1994-11-18 EP EP95903568A patent/EP0698271B1/en not_active Expired - Lifetime
- 1994-11-18 DE DE69422915T patent/DE69422915T2/de not_active Expired - Lifetime
- 1994-11-18 KR KR1019950704757A patent/KR100283599B1/ko not_active IP Right Cessation
- 1994-11-18 JP JP52288895A patent/JP3358814B2/ja not_active Expired - Fee Related
- 1994-11-18 CN CN94191980A patent/CN1049515C/zh not_active Expired - Fee Related
- 1994-11-18 WO PCT/US1994/013359 patent/WO1995024040A1/en active IP Right Grant
- 1994-12-05 TW TW083111289A patent/TW265486B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016104987A1 (de) * | 2016-03-17 | 2017-09-21 | Infineon Technologies Ag | Speicheranordnung und Verfahren zum Lesen einer Speicherzelle eines Speichers |
US10134452B2 (en) | 2016-03-17 | 2018-11-20 | Infineon Technologies Ag | Memory arrangement and method for reading a memory cell of a memory |
DE102016104987B4 (de) | 2016-03-17 | 2024-05-23 | Infineon Technologies Ag | Speicheranordnung und Verfahren zum Lesen einer Speicherzelle eines Speichers |
Also Published As
Publication number | Publication date |
---|---|
JPH08510079A (ja) | 1996-10-22 |
US5390147A (en) | 1995-02-14 |
EP0698271A1 (en) | 1996-02-28 |
EP0698271B1 (en) | 2000-02-02 |
KR100283599B1 (ko) | 2001-03-02 |
KR960702158A (ko) | 1996-03-28 |
DE69422915D1 (de) | 2000-03-09 |
EP0698271A4 (en) | 1997-11-26 |
WO1995024040A1 (en) | 1995-09-08 |
CN1143424A (zh) | 1997-02-19 |
JP3358814B2 (ja) | 2002-12-24 |
CN1049515C (zh) | 2000-02-16 |
TW265486B (ja) | 1995-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |