DE69416012D1 - Verfahren zum Herstellen einer lichtemittierenden Diode mit transparentem Substrat - Google Patents

Verfahren zum Herstellen einer lichtemittierenden Diode mit transparentem Substrat

Info

Publication number
DE69416012D1
DE69416012D1 DE69416012T DE69416012T DE69416012D1 DE 69416012 D1 DE69416012 D1 DE 69416012D1 DE 69416012 T DE69416012 T DE 69416012T DE 69416012 T DE69416012 T DE 69416012T DE 69416012 D1 DE69416012 D1 DE 69416012D1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting diode
transparent substrate
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69416012T
Other languages
English (en)
Other versions
DE69416012T2 (de
Inventor
Masanori Watanabe
Haruhisa Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69416012D1 publication Critical patent/DE69416012D1/de
Publication of DE69416012T2 publication Critical patent/DE69416012T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
DE69416012T 1993-02-10 1994-02-08 Verfahren zum Herstellen einer lichtemittierenden Diode mit transparentem Substrat Expired - Lifetime DE69416012T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2294693 1993-02-10
JP32033493A JP3230638B2 (ja) 1993-02-10 1993-12-20 発光ダイオードの製造方法

Publications (2)

Publication Number Publication Date
DE69416012D1 true DE69416012D1 (de) 1999-03-04
DE69416012T2 DE69416012T2 (de) 1999-07-15

Family

ID=26360245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416012T Expired - Lifetime DE69416012T2 (de) 1993-02-10 1994-02-08 Verfahren zum Herstellen einer lichtemittierenden Diode mit transparentem Substrat

Country Status (4)

Country Link
US (1) US5403916A (de)
EP (1) EP0611131B1 (de)
JP (1) JP3230638B2 (de)
DE (1) DE69416012T2 (de)

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Also Published As

Publication number Publication date
JPH06296040A (ja) 1994-10-21
DE69416012T2 (de) 1999-07-15
JP3230638B2 (ja) 2001-11-19
EP0611131B1 (de) 1999-01-20
EP0611131A1 (de) 1994-08-17
US5403916A (en) 1995-04-04

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