DE69411836T2 - Verfahren zum Herstellen einer lichtemittierenden Halbleitervorrichtung - Google Patents

Verfahren zum Herstellen einer lichtemittierenden Halbleitervorrichtung

Info

Publication number
DE69411836T2
DE69411836T2 DE69411836T DE69411836T DE69411836T2 DE 69411836 T2 DE69411836 T2 DE 69411836T2 DE 69411836 T DE69411836 T DE 69411836T DE 69411836 T DE69411836 T DE 69411836T DE 69411836 T2 DE69411836 T2 DE 69411836T2
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69411836T
Other languages
English (en)
Other versions
DE69411836D1 (de
Inventor
Masato Yamada
Tadashi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69411836D1 publication Critical patent/DE69411836D1/de
Publication of DE69411836T2 publication Critical patent/DE69411836T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/099—LED, multicolor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/163—Thick-thin oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer
DE69411836T 1993-09-24 1994-09-23 Verfahren zum Herstellen einer lichtemittierenden Halbleitervorrichtung Expired - Fee Related DE69411836T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26190393A JP2817590B2 (ja) 1993-09-24 1993-09-24 発光素子の製造方法

Publications (2)

Publication Number Publication Date
DE69411836D1 DE69411836D1 (de) 1998-08-27
DE69411836T2 true DE69411836T2 (de) 1999-03-18

Family

ID=17368360

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69411836T Expired - Fee Related DE69411836T2 (de) 1993-09-24 1994-09-23 Verfahren zum Herstellen einer lichtemittierenden Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5459106A (de)
EP (1) EP0645829B1 (de)
JP (1) JP2817590B2 (de)
DE (1) DE69411836T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004029412A1 (de) * 2004-02-27 2005-10-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
US7667240B2 (en) 2003-06-30 2010-02-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip and method for producing such a semiconductor chip

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013540A (en) * 1998-05-01 2000-01-11 Lucent Technologies, Inc. Laser diode with substrate-side protection
US6201264B1 (en) * 1999-01-14 2001-03-13 Lumileds Lighting, U.S., Llc Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
DE10261675B4 (de) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht
CN100460942C (zh) * 2004-06-02 2009-02-11 中芯国际集成电路制造(上海)有限公司 硅上液晶器件及其制造方法
JP5244703B2 (ja) 2009-05-22 2013-07-24 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ、並びに照明装置
CN102610708B (zh) * 2011-01-19 2014-09-03 鼎元光电科技股份有限公司 发光二极管的制法
CN112259450A (zh) * 2020-09-18 2021-01-22 厦门市三安集成电路有限公司 一种分段式蚀刻方法
CN114188458B (zh) * 2021-12-02 2023-05-02 重庆康佳光电技术研究院有限公司 一种发光二极管的制作方法及发光二极管

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914465A (en) * 1972-09-25 1975-10-21 Bell Telephone Labor Inc Surface passivation of GaAs junction laser devices
JPS4995592A (de) * 1973-01-12 1974-09-10
JPS4995591A (de) * 1973-01-12 1974-09-10
JPS5816535A (ja) * 1981-07-23 1983-01-31 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
FI64878C (fi) * 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer
JPS6413740A (en) * 1987-03-23 1989-01-18 Toshiba Corp Formation of wiring layer in semiconductor device
JP2559536B2 (ja) * 1990-12-17 1996-12-04 信越半導体株式会社 発光素子の製造方法
US5262360A (en) * 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
JPH05129662A (ja) * 1991-10-31 1993-05-25 Iwasaki Electric Co Ltd 発光ダイオードランプの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7667240B2 (en) 2003-06-30 2010-02-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip and method for producing such a semiconductor chip
DE102004029412A1 (de) * 2004-02-27 2005-10-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips

Also Published As

Publication number Publication date
EP0645829A1 (de) 1995-03-29
JP2817590B2 (ja) 1998-10-30
EP0645829B1 (de) 1998-07-22
US5459106A (en) 1995-10-17
JPH0794777A (ja) 1995-04-07
DE69411836D1 (de) 1998-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee