CN100460942C - 硅上液晶器件及其制造方法 - Google Patents
硅上液晶器件及其制造方法 Download PDFInfo
- Publication number
- CN100460942C CN100460942C CNB2004100249699A CN200410024969A CN100460942C CN 100460942 C CN100460942 C CN 100460942C CN B2004100249699 A CNB2004100249699 A CN B2004100249699A CN 200410024969 A CN200410024969 A CN 200410024969A CN 100460942 C CN100460942 C CN 100460942C
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- China
- Prior art keywords
- zone
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- interlayer dielectric
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
Abstract
Description
Claims (21)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100249699A CN100460942C (zh) | 2004-06-02 | 2004-06-02 | 硅上液晶器件及其制造方法 |
US10/927,707 US7527993B2 (en) | 2004-06-02 | 2004-08-26 | Method and structure for fabricating smooth mirrors for liquid crystal on silicon devices |
US12/420,706 US9310643B2 (en) | 2004-06-02 | 2009-04-08 | Method and structure for fabricating smooth mirrors for liquid crystal on silicon devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100249699A CN100460942C (zh) | 2004-06-02 | 2004-06-02 | 硅上液晶器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1704809A CN1704809A (zh) | 2005-12-07 |
CN100460942C true CN100460942C (zh) | 2009-02-11 |
Family
ID=35449493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100249699A Expired - Fee Related CN100460942C (zh) | 2004-06-02 | 2004-06-02 | 硅上液晶器件及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7527993B2 (zh) |
CN (1) | CN100460942C (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100460942C (zh) | 2004-06-02 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | 硅上液晶器件及其制造方法 |
US7374962B2 (en) * | 2005-09-29 | 2008-05-20 | Miradia Inc. | Method of fabricating reflective spatial light modulator having high contrast ratio |
US7675670B2 (en) * | 2005-10-28 | 2010-03-09 | Miradia Inc. | Fabrication of a high fill ratio silicon spatial light modulator |
CN100449365C (zh) * | 2006-09-30 | 2009-01-07 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示装置反射镜面的制作方法 |
CN100483235C (zh) * | 2006-12-04 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示器单元及其形成方法 |
CN101311802B (zh) * | 2007-05-23 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示器、硅基液晶显示器反射镜面及制作方法 |
CN101330051B (zh) * | 2007-06-21 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 利用银获得lcos器件的方法和所产生的结构 |
JPWO2009031401A1 (ja) * | 2007-09-04 | 2010-12-09 | コニカミノルタオプト株式会社 | 情報記録媒体用ガラス基板の製造方法、情報記録媒体用ガラス基板及び磁気記録媒体 |
CN101398579B (zh) * | 2007-09-30 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 制作微反射镜层及硅基液晶显示器的方法 |
US7863145B2 (en) * | 2008-09-19 | 2011-01-04 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and resulting structure using silver for LCOS devices |
CN102074505B (zh) * | 2009-11-20 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶器件及其制造方法 |
CN103008216B (zh) * | 2012-11-26 | 2015-10-07 | 中国计量科学研究院 | 铝合金压力气瓶的内壁处理工艺及处理装置 |
US10739646B1 (en) * | 2019-04-30 | 2020-08-11 | Omnivision Technologies, Inc. | Liquid crystal on silicon device mirror metal process |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006012020A1 (en) * | 2004-06-28 | 2006-02-02 | Intel Corporation | Lactate-containing corrosion inhibitor |
CN1749814A (zh) * | 2004-09-15 | 2006-03-22 | 中芯国际集成电路制造(上海)有限公司 | 用于硅上液晶器件的铝化学机械抛光回蚀 |
Family Cites Families (29)
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JPS60253962A (ja) * | 1984-05-31 | 1985-12-14 | Riken Corp | 火炎センサ−用金属電極 |
EP0499979A3 (en) * | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
WO1994005042A1 (en) * | 1992-08-14 | 1994-03-03 | International Business Machines Corporation | Mos device having protection against electrostatic discharge |
US5461501A (en) * | 1992-10-08 | 1995-10-24 | Hitachi, Ltd. | Liquid crystal substrate having 3 metal layers with slits offset to block light from reaching the substrate |
JP2944336B2 (ja) * | 1992-11-02 | 1999-09-06 | シャープ株式会社 | 配線構造 |
JP2817590B2 (ja) * | 1993-09-24 | 1998-10-30 | 信越半導体株式会社 | 発光素子の製造方法 |
US5646073A (en) * | 1995-01-18 | 1997-07-08 | Lsi Logic Corporation | Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product |
JP3108861B2 (ja) * | 1995-06-30 | 2000-11-13 | キヤノン株式会社 | アクティブマトリクス基板、該基板を用いた表示装置、及びこれらの製造方法 |
JPH09101506A (ja) * | 1995-07-31 | 1997-04-15 | Victor Co Of Japan Ltd | 液晶表示装置 |
US5990988A (en) * | 1995-09-01 | 1999-11-23 | Pioneer Electric Corporation | Reflection liquid crystal display and a semiconductor device for the display |
JP3049689B2 (ja) * | 1995-09-14 | 2000-06-05 | キヤノン株式会社 | 液晶表示装置 |
US6545654B2 (en) * | 1996-10-31 | 2003-04-08 | Kopin Corporation | Microdisplay for portable communication systems |
US6019926A (en) * | 1997-02-20 | 2000-02-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration | Reflective silvered polyimide films via in situ thermal reduction silver (I) complexes |
JP3279234B2 (ja) * | 1997-10-27 | 2002-04-30 | キヤノン株式会社 | 半導体装置の製造方法 |
JPH11162829A (ja) * | 1997-11-21 | 1999-06-18 | Nec Corp | 半導体装置の製造方法 |
JP3119228B2 (ja) * | 1998-01-20 | 2000-12-18 | 日本電気株式会社 | 液晶表示パネル及びその製造方法 |
JP2001176846A (ja) * | 1999-12-14 | 2001-06-29 | Hitachi Chem Co Ltd | プラズマエッチング電極板及びその製造法 |
JP4979154B2 (ja) * | 2000-06-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US6576550B1 (en) * | 2000-06-30 | 2003-06-10 | Infineon, Ag | ‘Via first’ dual damascene process for copper metallization |
US6472306B1 (en) * | 2000-09-05 | 2002-10-29 | Industrial Technology Research Institute | Method of forming a dual damascene opening using CVD Low-K material and spin-on-polymer |
GB0110241D0 (en) * | 2001-04-26 | 2001-06-20 | Trikon Holdings Ltd | A method of filling a via or recess in a semiconductor substrate |
US6797983B2 (en) * | 2002-01-30 | 2004-09-28 | United Microelectronics Corp. | Method of fabrication LCOS structure |
JP3969163B2 (ja) * | 2002-04-12 | 2007-09-05 | 日本ビクター株式会社 | 反射型液晶表示装置 |
US20040067640A1 (en) * | 2002-10-08 | 2004-04-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple layer copper deposition to improve CMP performance |
US7244997B2 (en) * | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
US7087507B2 (en) * | 2004-05-17 | 2006-08-08 | Pdf Solutions, Inc. | Implantation of deuterium in MOS and DRAM devices |
CN100460942C (zh) | 2004-06-02 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | 硅上液晶器件及其制造方法 |
DE102005002275B4 (de) * | 2005-01-18 | 2015-02-05 | Andreas Stihl Ag & Co. Kg | Verfahren zum Betrieb eines Einzylinder-Zweitaktmotors |
JP2008145573A (ja) * | 2006-12-07 | 2008-06-26 | Seiko Epson Corp | 偏光素子とその製造方法、液晶装置、及び電子機器 |
-
2004
- 2004-06-02 CN CNB2004100249699A patent/CN100460942C/zh not_active Expired - Fee Related
- 2004-08-26 US US10/927,707 patent/US7527993B2/en active Active
-
2009
- 2009-04-08 US US12/420,706 patent/US9310643B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006012020A1 (en) * | 2004-06-28 | 2006-02-02 | Intel Corporation | Lactate-containing corrosion inhibitor |
CN1749814A (zh) * | 2004-09-15 | 2006-03-22 | 中芯国际集成电路制造(上海)有限公司 | 用于硅上液晶器件的铝化学机械抛光回蚀 |
Also Published As
Publication number | Publication date |
---|---|
CN1704809A (zh) | 2005-12-07 |
US20050272177A1 (en) | 2005-12-08 |
US9310643B2 (en) | 2016-04-12 |
US20090200564A1 (en) | 2009-08-13 |
US7527993B2 (en) | 2009-05-05 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111202 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20190602 |