DE69922061D1 - Verfahren zur Herstellung einer Licht emittierenden Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Licht emittierenden Halbleitervorrichtung

Info

Publication number
DE69922061D1
DE69922061D1 DE69922061T DE69922061T DE69922061D1 DE 69922061 D1 DE69922061 D1 DE 69922061D1 DE 69922061 T DE69922061 T DE 69922061T DE 69922061 T DE69922061 T DE 69922061T DE 69922061 D1 DE69922061 D1 DE 69922061D1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69922061T
Other languages
English (en)
Other versions
DE69922061T2 (de
Inventor
Yoshinori Kimura
Hiroyuki Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Publication of DE69922061D1 publication Critical patent/DE69922061D1/de
Application granted granted Critical
Publication of DE69922061T2 publication Critical patent/DE69922061T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69922061T 1998-01-08 1999-01-05 Verfahren zur Herstellung einer lichtemittierenden Halbleiterbauelements mit einer Stapelstruktur Expired - Lifetime DE69922061T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1320498 1998-01-08
JP1320498A JPH11204833A (ja) 1998-01-08 1998-01-08 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
DE69922061D1 true DE69922061D1 (de) 2004-12-30
DE69922061T2 DE69922061T2 (de) 2005-11-24

Family

ID=11826636

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69922061T Expired - Lifetime DE69922061T2 (de) 1998-01-08 1999-01-05 Verfahren zur Herstellung einer lichtemittierenden Halbleiterbauelements mit einer Stapelstruktur

Country Status (4)

Country Link
US (1) US6200827B1 (de)
EP (1) EP0929109B1 (de)
JP (1) JPH11204833A (de)
DE (1) DE69922061T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727167B2 (en) 2000-10-13 2004-04-27 Emcore Corporation Method of making an aligned electrode on a semiconductor structure
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4830619B2 (ja) * 2006-05-10 2011-12-07 住友電気工業株式会社 集積半導体光素子およびその製造方法
TW201005994A (en) * 2008-07-23 2010-02-01 Walsin Lihwa Corp Light emitting diode and the method for manufacturing the same
US8592309B2 (en) * 2009-11-06 2013-11-26 Ultratech, Inc. Laser spike annealing for GaN LEDs
JP2013120936A (ja) 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
JP6561367B2 (ja) * 2014-02-26 2019-08-21 学校法人 名城大学 ｎｐｎ型窒化物半導体発光素子の製造方法
US10700239B1 (en) * 2019-03-21 2020-06-30 Mikro Mesa Technology Co., Ltd. Micro light-emitting diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121617B2 (ja) * 1994-07-21 2001-01-09 松下電器産業株式会社 半導体発光素子およびその製造方法
JPH0888432A (ja) * 1994-09-16 1996-04-02 Rohm Co Ltd 半導体レーザの製法
JP3254931B2 (ja) * 1994-10-17 2002-02-12 松下電器産業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0929109B1 (de) 2004-11-24
US6200827B1 (en) 2001-03-13
DE69922061T2 (de) 2005-11-24
JPH11204833A (ja) 1999-07-30
EP0929109A1 (de) 1999-07-14

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SHOWA DENKO K.K., TOKIO/TOKYO, JP