DE69229991T2 - Lichtemittierende Diode mit einer dicken transparenten Schicht - Google Patents

Lichtemittierende Diode mit einer dicken transparenten Schicht

Info

Publication number
DE69229991T2
DE69229991T2 DE69229991T DE69229991T DE69229991T2 DE 69229991 T2 DE69229991 T2 DE 69229991T2 DE 69229991 T DE69229991 T DE 69229991T DE 69229991 T DE69229991 T DE 69229991T DE 69229991 T2 DE69229991 T2 DE 69229991T2
Authority
DE
Germany
Prior art keywords
light emitting
emitting diode
transparent layer
thick transparent
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69229991T
Other languages
English (en)
Other versions
DE69229991D1 (de
Inventor
Robert M Fletcher
Kuo-Hsin Huang
Chihping Kuo
Jiann Yu
Timothy D Osentowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69229991D1 publication Critical patent/DE69229991D1/de
Publication of DE69229991T2 publication Critical patent/DE69229991T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
DE69229991T 1992-01-10 1992-12-22 Lichtemittierende Diode mit einer dicken transparenten Schicht Expired - Lifetime DE69229991T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/819,542 US5233204A (en) 1992-01-10 1992-01-10 Light-emitting diode with a thick transparent layer

Publications (2)

Publication Number Publication Date
DE69229991D1 DE69229991D1 (de) 1999-10-21
DE69229991T2 true DE69229991T2 (de) 2000-01-05

Family

ID=25228430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229991T Expired - Lifetime DE69229991T2 (de) 1992-01-10 1992-12-22 Lichtemittierende Diode mit einer dicken transparenten Schicht

Country Status (4)

Country Link
US (1) US5233204A (de)
EP (1) EP0551001B1 (de)
JP (1) JP3639608B2 (de)
DE (1) DE69229991T2 (de)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6590502B1 (en) 1992-10-12 2003-07-08 911Ep, Inc. Led warning signal light and movable support
US5481122A (en) * 1994-07-25 1996-01-02 Industrial Technology Research Institute Surface light emitting diode with electrically conductive window layer
US5811839A (en) 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP3442889B2 (ja) 1994-12-27 2003-09-02 株式会社東芝 半導体発光装置
US5671996A (en) * 1994-12-30 1997-09-30 Donnelly Corporation Vehicle instrumentation/console lighting
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
DE19537543A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lichtemittierende Diode
JP3233569B2 (ja) * 1996-03-22 2001-11-26 シャープ株式会社 半導体発光素子
JPH09283798A (ja) 1996-04-19 1997-10-31 Rohm Co Ltd 半導体発光素子およびその製法
US5705834A (en) * 1996-04-23 1998-01-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased efficiency LED
WO1998006133A2 (de) 1996-08-07 1998-02-12 Siemens Aktiengesellschaft Verfahren zur herstellung einer infrarotemittierenden lumineszenzdiode
DE19632626A1 (de) * 1996-08-13 1998-02-19 Siemens Ag Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge
US6031958A (en) 1997-05-21 2000-02-29 Mcgaffigan; Thomas H. Optical light pipes with laser light appearance
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US7365369B2 (en) 1997-07-25 2008-04-29 Nichia Corporation Nitride semiconductor device
DE19741609C2 (de) * 1997-09-20 2003-02-27 Vishay Semiconductor Gmbh Verwendung einer Übergitterstruktur aus einer Mehrzahl von hintereinander angeordneten Heterogrenzflächenschichtfolgen zur Verbesserung der lateralen Stromausbreitung in einer lichtemittierenden Halbleiterdiode
GB2330679B (en) 1997-10-21 2002-04-24 911 Emergency Products Inc Warning signal light
US6100544A (en) * 1998-05-20 2000-08-08 Visual Photonics Epitaxy Co., Ltd. Light-emitting diode having a layer of AlGaInP graded composition
US20010020703A1 (en) 1998-07-24 2001-09-13 Nathan F. Gardner Algainp light emitting devices with thin active layers
US6207972B1 (en) 1999-01-12 2001-03-27 Super Epitaxial Products, Inc. Light emitting diode with transparent window layer
JP3472714B2 (ja) 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6462669B1 (en) 1999-04-06 2002-10-08 E. P . Survivors Llc Replaceable LED modules
US6380865B1 (en) 1999-04-06 2002-04-30 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6614359B2 (en) 1999-04-06 2003-09-02 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6258699B1 (en) 1999-05-10 2001-07-10 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
TW437104B (en) 1999-05-25 2001-05-28 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
WO2000074972A1 (en) 1999-06-08 2000-12-14 911 Emergency Products, Inc. Led light stick assembly
US6705745B1 (en) 1999-06-08 2004-03-16 911Ep, Inc. Rotational led reflector
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6700502B1 (en) 1999-06-08 2004-03-02 911Ep, Inc. Strip LED light assembly for motor vehicle
US6367949B1 (en) * 1999-08-04 2002-04-09 911 Emergency Products, Inc. Par 36 LED utility lamp
US6623151B2 (en) 1999-08-04 2003-09-23 911Ep, Inc. LED double light bar and warning light signal
US6547410B1 (en) 2000-07-28 2003-04-15 911 Emergency Products, Inc. LED alley/take-down light
DE19943406C2 (de) 1999-09-10 2001-07-19 Osram Opto Semiconductors Gmbh Lichtemissionsdiode mit Oberflächenstrukturierung
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
DE19947030A1 (de) 1999-09-30 2001-04-19 Osram Opto Semiconductors Gmbh Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
US6287882B1 (en) 1999-10-04 2001-09-11 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same
JP2001267631A (ja) 2000-01-11 2001-09-28 Sharp Corp 半導体発光素子
EP1256135A1 (de) * 2000-02-15 2002-11-13 Osram Opto Semiconductors GmbH Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
DE20111659U1 (de) * 2000-05-23 2001-12-13 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
US6590343B2 (en) 2000-06-06 2003-07-08 911Ep, Inc. LED compensation circuit
DE10056292A1 (de) 2000-11-14 2002-09-19 Osram Opto Semiconductors Gmbh Lumineszenzdiode
WO2002041276A2 (en) * 2000-11-15 2002-05-23 Snowy Village, Inc. Led warning light and communication system
US7439847B2 (en) * 2002-08-23 2008-10-21 John C. Pederson Intelligent observation and identification database system
US8188878B2 (en) * 2000-11-15 2012-05-29 Federal Law Enforcement Development Services, Inc. LED light communication system
US6940704B2 (en) 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
DE10120703A1 (de) * 2001-04-27 2002-10-31 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
DE10148227B4 (de) * 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
CN100392873C (zh) * 2001-12-07 2008-06-04 张修恒 叠置晶片全彩色发光二极管的封装结构及方法
JP3776824B2 (ja) 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
US6777257B2 (en) * 2002-05-17 2004-08-17 Shin-Etsu Handotai Co., Ltd. Method of fabricating a light emitting device and light emitting device
US6890781B2 (en) * 2002-06-25 2005-05-10 Uni Light Technology Inc. Transparent layer of a LED device and the method for growing the same
JP2004128452A (ja) * 2002-07-31 2004-04-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
AU2003259533A1 (en) 2002-07-31 2004-02-25 Firecomms Limited A light emitting diode
DE10239045A1 (de) * 2002-08-26 2004-03-11 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektromagnetische Strahlung emittierenden Halbleiterchips und elektromagnetische Strahlung emittierender Halbleiterchip
JP4080843B2 (ja) 2002-10-30 2008-04-23 株式会社東芝 不揮発性半導体記憶装置
US20040227141A1 (en) * 2003-01-30 2004-11-18 Epistar Corporation Light emitting device having a high resistivity cushion layer
WO2005071763A2 (de) * 2004-01-26 2005-08-04 Osram Opto Semiconductors Gmbh Dünnfilm-led mit einer stromaufweitungsstruktur
DE102004025610A1 (de) 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
JP4371029B2 (ja) 2004-09-29 2009-11-25 サンケン電気株式会社 半導体発光素子およびその製造方法
US7952112B2 (en) * 2005-04-29 2011-05-31 Philips Lumileds Lighting Company Llc RGB thermal isolation substrate
DE102005025416A1 (de) * 2005-06-02 2006-12-14 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Kontaktstruktur
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US20070181905A1 (en) * 2006-02-07 2007-08-09 Hui-Heng Wang Light emitting diode having enhanced side emitting capability
US8350279B2 (en) 2006-09-25 2013-01-08 Seoul Opto Device Co., Ltd. Light emitting diode having AlInGaP active layer and method of fabricating the same
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
WO2008148046A1 (en) 2007-05-24 2008-12-04 Federal Law Enforcement Development Services, Inc. Led light broad band over power line communication system
US9294198B2 (en) 2007-05-24 2016-03-22 Federal Law Enforcement Development Services, Inc. Pulsed light communication key
US9455783B2 (en) 2013-05-06 2016-09-27 Federal Law Enforcement Development Services, Inc. Network security and variable pulse wave form with continuous communication
US9100124B2 (en) 2007-05-24 2015-08-04 Federal Law Enforcement Development Services, Inc. LED Light Fixture
US9258864B2 (en) 2007-05-24 2016-02-09 Federal Law Enforcement Development Services, Inc. LED light control and management system
US11265082B2 (en) 2007-05-24 2022-03-01 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US9414458B2 (en) 2007-05-24 2016-08-09 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US8692286B2 (en) 2007-12-14 2014-04-08 Philips Lumileds Lighing Company LLC Light emitting device with bonded interface
EP2240968A1 (de) 2008-02-08 2010-10-20 Illumitex, Inc. System und verfahren zur bildung einer emitterschicht
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8890773B1 (en) 2009-04-01 2014-11-18 Federal Law Enforcement Development Services, Inc. Visible light transceiver glasses
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
WO2012097291A1 (en) 2011-01-14 2012-07-19 Federal Law Enforcement Development Services, Inc. Method of providing lumens and tracking of lumen consumption
WO2014160096A1 (en) 2013-03-13 2014-10-02 Federal Law Enforcement Development Services, Inc. Led light control and management system
US20150198941A1 (en) 2014-01-15 2015-07-16 John C. Pederson Cyber Life Electronic Networking and Commerce Operating Exchange
DE102014114613B4 (de) 2014-10-08 2023-10-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl an strahlungsemittierenden Halbleiterchips und optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip
US20170048953A1 (en) 2015-08-11 2017-02-16 Federal Law Enforcement Development Services, Inc. Programmable switch and system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0728047B2 (ja) * 1986-02-17 1995-03-29 日本電気株式会社 光トランジスタ
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5008718A (en) * 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window

Also Published As

Publication number Publication date
JPH05275740A (ja) 1993-10-22
EP0551001A1 (de) 1993-07-14
EP0551001B1 (de) 1999-09-15
US5233204A (en) 1993-08-03
JP3639608B2 (ja) 2005-04-20
DE69229991D1 (de) 1999-10-21

Similar Documents

Publication Publication Date Title
DE69229991T2 (de) Lichtemittierende Diode mit einer dicken transparenten Schicht
DE69025273T2 (de) Lichtemittierende Diode mit lichtreflektierender Schicht
DE59309755D1 (de) Lichtquelle mit einer lumineszierenden Schicht
DE69406964T2 (de) Verbinden von Schichten einer lichtemittierenden Diode mit einem Substrat
DE69226848D1 (de) Lichtemittierende Diode mit verästelter Oberflächenelektrode
DE69416012D1 (de) Verfahren zum Herstellen einer lichtemittierenden Diode mit transparentem Substrat
DE69214423T2 (de) Verwendung einer Halbleiterstruktur als lichtemittierende Diode
DE69331554T2 (de) Lichtemittierende Diode
DE69325045T2 (de) Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung
GB2304230B (en) Transparent substrate light emitting diodes with directed light output
DE69127677T2 (de) Lichtemittierende Halbleiterdioden
DE68913877T2 (de) Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand.
FR2538171B1 (fr) Diode electroluminescente a emission de surface
DE69841798D1 (de) Leuchte mit lichtemittierenden Dioden
DE69406049T2 (de) Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht
DE69331654T2 (de) Vorrichtung mit lichtemittierender Diode
DE69607817T2 (de) Ausrichtung einer Leuchtdiodenanordnung
DE69118482T2 (de) Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche
FR2631102B1 (fr) Lanterne a diodes electroluminescentes
DE69526403D1 (de) Spektrophotometer mit Lichtquelle in Form einer lichtemittierenden Diodenanordnung
DE69521024T2 (de) Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode
DE69107260T2 (de) Sichtbares Licht ausstrahlender Halbleiterlaser mit Fensterstruktur.
KR900003793U (ko) 발광 다이오드 어레이
DE9319416U1 (de) Wirksame Lichtemissionsdioden mit modifizierten Fensterschichten
DE69127869T2 (de) Optische Halbleitervorrichtung zur Emission oder Detektion von Licht mit einer gewünschten Wellenlänge

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: LUMILEDS LIGHTING, U.S., LLC, SAN JOSE, CALIF., US

8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY,LLC, SAN JOS, US

R071 Expiry of right

Ref document number: 551001

Country of ref document: EP