US6590502B1
(en)
|
1992-10-12 |
2003-07-08 |
911Ep, Inc. |
Led warning signal light and movable support
|
US5481122A
(en)
*
|
1994-07-25 |
1996-01-02 |
Industrial Technology Research Institute |
Surface light emitting diode with electrically conductive window layer
|
US5811839A
(en)
|
1994-09-01 |
1998-09-22 |
Mitsubishi Chemical Corporation |
Semiconductor light-emitting devices
|
US6996150B1
(en)
|
1994-09-14 |
2006-02-07 |
Rohm Co., Ltd. |
Semiconductor light emitting device and manufacturing method therefor
|
JP3442889B2
(ja)
|
1994-12-27 |
2003-09-02 |
株式会社東芝 |
半導体発光装置
|
US5671996A
(en)
*
|
1994-12-30 |
1997-09-30 |
Donnelly Corporation |
Vehicle instrumentation/console lighting
|
DE19629920B4
(de)
*
|
1995-08-10 |
2006-02-02 |
LumiLeds Lighting, U.S., LLC, San Jose |
Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
|
DE19537543A1
(de)
*
|
1995-10-09 |
1997-04-10 |
Telefunken Microelectron |
Lichtemittierende Diode
|
JP3233569B2
(ja)
*
|
1996-03-22 |
2001-11-26 |
シャープ株式会社 |
半導体発光素子
|
JPH09283798A
(ja)
|
1996-04-19 |
1997-10-31 |
Rohm Co Ltd |
半導体発光素子およびその製法
|
US5705834A
(en)
*
|
1996-04-23 |
1998-01-06 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
Increased efficiency LED
|
WO1998006133A2
(de)
|
1996-08-07 |
1998-02-12 |
Siemens Aktiengesellschaft |
Verfahren zur herstellung einer infrarotemittierenden lumineszenzdiode
|
DE19632626A1
(de)
*
|
1996-08-13 |
1998-02-19 |
Siemens Ag |
Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge
|
US6031958A
(en)
|
1997-05-21 |
2000-02-29 |
Mcgaffigan; Thomas H. |
Optical light pipes with laser light appearance
|
US6229160B1
(en)
*
|
1997-06-03 |
2001-05-08 |
Lumileds Lighting, U.S., Llc |
Light extraction from a semiconductor light-emitting device via chip shaping
|
US6784463B2
(en)
*
|
1997-06-03 |
2004-08-31 |
Lumileds Lighting U.S., Llc |
III-Phospide and III-Arsenide flip chip light-emitting devices
|
US7365369B2
(en)
|
1997-07-25 |
2008-04-29 |
Nichia Corporation |
Nitride semiconductor device
|
DE19741609C2
(de)
*
|
1997-09-20 |
2003-02-27 |
Vishay Semiconductor Gmbh |
Verwendung einer Übergitterstruktur aus einer Mehrzahl von hintereinander angeordneten Heterogrenzflächenschichtfolgen zur Verbesserung der lateralen Stromausbreitung in einer lichtemittierenden Halbleiterdiode
|
GB2330679B
(en)
|
1997-10-21 |
2002-04-24 |
911 Emergency Products Inc |
Warning signal light
|
US6100544A
(en)
*
|
1998-05-20 |
2000-08-08 |
Visual Photonics Epitaxy Co., Ltd. |
Light-emitting diode having a layer of AlGaInP graded composition
|
US20010020703A1
(en)
|
1998-07-24 |
2001-09-13 |
Nathan F. Gardner |
Algainp light emitting devices with thin active layers
|
US6207972B1
(en)
|
1999-01-12 |
2001-03-27 |
Super Epitaxial Products, Inc. |
Light emitting diode with transparent window layer
|
JP3472714B2
(ja)
|
1999-01-25 |
2003-12-02 |
シャープ株式会社 |
半導体発光素子の製造方法
|
JP3770014B2
(ja)
|
1999-02-09 |
2006-04-26 |
日亜化学工業株式会社 |
窒化物半導体素子
|
DE60043536D1
(de)
|
1999-03-04 |
2010-01-28 |
Nichia Corp |
Nitridhalbleiterlaserelement
|
US6462669B1
(en)
|
1999-04-06 |
2002-10-08 |
E. P . Survivors Llc |
Replaceable LED modules
|
US6380865B1
(en)
|
1999-04-06 |
2002-04-30 |
911 Emergency Products, Inc. |
Replacement led lamp assembly and modulated power intensity for light source
|
US6614359B2
(en)
|
1999-04-06 |
2003-09-02 |
911 Emergency Products, Inc. |
Replacement led lamp assembly and modulated power intensity for light source
|
US6258699B1
(en)
|
1999-05-10 |
2001-07-10 |
Visual Photonics Epitaxy Co., Ltd. |
Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
|
TW437104B
(en)
|
1999-05-25 |
2001-05-28 |
Wang Tien Yang |
Semiconductor light-emitting device and method for manufacturing the same
|
WO2000074972A1
(en)
|
1999-06-08 |
2000-12-14 |
911 Emergency Products, Inc. |
Led light stick assembly
|
US6705745B1
(en)
|
1999-06-08 |
2004-03-16 |
911Ep, Inc. |
Rotational led reflector
|
US6133589A
(en)
|
1999-06-08 |
2000-10-17 |
Lumileds Lighting, U.S., Llc |
AlGaInN-based LED having thick epitaxial layer for improved light extraction
|
US6287947B1
(en)
*
|
1999-06-08 |
2001-09-11 |
Lumileds Lighting, U.S. Llc |
Method of forming transparent contacts to a p-type GaN layer
|
US6700502B1
(en)
|
1999-06-08 |
2004-03-02 |
911Ep, Inc. |
Strip LED light assembly for motor vehicle
|
US6367949B1
(en)
*
|
1999-08-04 |
2002-04-09 |
911 Emergency Products, Inc. |
Par 36 LED utility lamp
|
US6623151B2
(en)
|
1999-08-04 |
2003-09-23 |
911Ep, Inc. |
LED double light bar and warning light signal
|
US6547410B1
(en)
|
2000-07-28 |
2003-04-15 |
911 Emergency Products, Inc. |
LED alley/take-down light
|
DE19943406C2
(de)
|
1999-09-10 |
2001-07-19 |
Osram Opto Semiconductors Gmbh |
Lichtemissionsdiode mit Oberflächenstrukturierung
|
US6577658B1
(en)
|
1999-09-20 |
2003-06-10 |
E20 Corporation, Inc. |
Method and apparatus for planar index guided vertical cavity surface emitting lasers
|
DE19947030A1
(de)
|
1999-09-30 |
2001-04-19 |
Osram Opto Semiconductors Gmbh |
Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
|
US6287882B1
(en)
|
1999-10-04 |
2001-09-11 |
Visual Photonics Epitaxy Co., Ltd. |
Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same
|
JP2001267631A
(ja)
|
2000-01-11 |
2001-09-28 |
Sharp Corp |
半導体発光素子
|
EP1256135A1
(de)
*
|
2000-02-15 |
2002-11-13 |
Osram Opto Semiconductors GmbH |
Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
|
DE10006738C2
(de)
*
|
2000-02-15 |
2002-01-17 |
Osram Opto Semiconductors Gmbh |
Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
|
DE10019665A1
(de)
*
|
2000-04-19 |
2001-10-31 |
Osram Opto Semiconductors Gmbh |
Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
|
DE20111659U1
(de)
*
|
2000-05-23 |
2001-12-13 |
Osram Opto Semiconductors Gmbh |
Bauelement für die Optoelektronik
|
US6590343B2
(en)
|
2000-06-06 |
2003-07-08 |
911Ep, Inc. |
LED compensation circuit
|
DE10056292A1
(de)
|
2000-11-14 |
2002-09-19 |
Osram Opto Semiconductors Gmbh |
Lumineszenzdiode
|
WO2002041276A2
(en)
*
|
2000-11-15 |
2002-05-23 |
Snowy Village, Inc. |
Led warning light and communication system
|
US7439847B2
(en)
*
|
2002-08-23 |
2008-10-21 |
John C. Pederson |
Intelligent observation and identification database system
|
US8188878B2
(en)
*
|
2000-11-15 |
2012-05-29 |
Federal Law Enforcement Development Services, Inc. |
LED light communication system
|
US6940704B2
(en)
|
2001-01-24 |
2005-09-06 |
Gelcore, Llc |
Semiconductor light emitting device
|
DE10120703A1
(de)
*
|
2001-04-27 |
2002-10-31 |
Osram Opto Semiconductors Gmbh |
Halbleiterchip für die Optoelektronik
|
DE10148227B4
(de)
*
|
2001-09-28 |
2015-03-05 |
Osram Opto Semiconductors Gmbh |
Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
|
CN100392873C
(zh)
*
|
2001-12-07 |
2008-06-04 |
张修恒 |
叠置晶片全彩色发光二极管的封装结构及方法
|
JP3776824B2
(ja)
|
2002-04-05 |
2006-05-17 |
株式会社東芝 |
半導体発光素子およびその製造方法
|
US6777257B2
(en)
*
|
2002-05-17 |
2004-08-17 |
Shin-Etsu Handotai Co., Ltd. |
Method of fabricating a light emitting device and light emitting device
|
US6890781B2
(en)
*
|
2002-06-25 |
2005-05-10 |
Uni Light Technology Inc. |
Transparent layer of a LED device and the method for growing the same
|
JP2004128452A
(ja)
*
|
2002-07-31 |
2004-04-22 |
Shin Etsu Handotai Co Ltd |
発光素子の製造方法及び発光素子
|
AU2003259533A1
(en)
|
2002-07-31 |
2004-02-25 |
Firecomms Limited |
A light emitting diode
|
DE10239045A1
(de)
*
|
2002-08-26 |
2004-03-11 |
Osram Opto Semiconductors Gmbh |
Verfahren zum Herstellen eines elektromagnetische Strahlung emittierenden Halbleiterchips und elektromagnetische Strahlung emittierender Halbleiterchip
|
JP4080843B2
(ja)
|
2002-10-30 |
2008-04-23 |
株式会社東芝 |
不揮発性半導体記憶装置
|
US20040227141A1
(en)
*
|
2003-01-30 |
2004-11-18 |
Epistar Corporation |
Light emitting device having a high resistivity cushion layer
|
WO2005071763A2
(de)
*
|
2004-01-26 |
2005-08-04 |
Osram Opto Semiconductors Gmbh |
Dünnfilm-led mit einer stromaufweitungsstruktur
|
DE102004025610A1
(de)
|
2004-04-30 |
2005-11-17 |
Osram Opto Semiconductors Gmbh |
Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
|
JP4371029B2
(ja)
|
2004-09-29 |
2009-11-25 |
サンケン電気株式会社 |
半導体発光素子およびその製造方法
|
US7952112B2
(en)
*
|
2005-04-29 |
2011-05-31 |
Philips Lumileds Lighting Company Llc |
RGB thermal isolation substrate
|
DE102005025416A1
(de)
*
|
2005-06-02 |
2006-12-14 |
Osram Opto Semiconductors Gmbh |
Lumineszenzdiodenchip mit einer Kontaktstruktur
|
US7772604B2
(en)
|
2006-01-05 |
2010-08-10 |
Illumitex |
Separate optical device for directing light from an LED
|
US20070181905A1
(en)
*
|
2006-02-07 |
2007-08-09 |
Hui-Heng Wang |
Light emitting diode having enhanced side emitting capability
|
US8350279B2
(en)
|
2006-09-25 |
2013-01-08 |
Seoul Opto Device Co., Ltd. |
Light emitting diode having AlInGaP active layer and method of fabricating the same
|
US8087960B2
(en)
|
2006-10-02 |
2012-01-03 |
Illumitex, Inc. |
LED system and method
|
WO2008148046A1
(en)
|
2007-05-24 |
2008-12-04 |
Federal Law Enforcement Development Services, Inc. |
Led light broad band over power line communication system
|
US9294198B2
(en)
|
2007-05-24 |
2016-03-22 |
Federal Law Enforcement Development Services, Inc. |
Pulsed light communication key
|
US9455783B2
(en)
|
2013-05-06 |
2016-09-27 |
Federal Law Enforcement Development Services, Inc. |
Network security and variable pulse wave form with continuous communication
|
US9100124B2
(en)
|
2007-05-24 |
2015-08-04 |
Federal Law Enforcement Development Services, Inc. |
LED Light Fixture
|
US9258864B2
(en)
|
2007-05-24 |
2016-02-09 |
Federal Law Enforcement Development Services, Inc. |
LED light control and management system
|
US11265082B2
(en)
|
2007-05-24 |
2022-03-01 |
Federal Law Enforcement Development Services, Inc. |
LED light control assembly and system
|
US9414458B2
(en)
|
2007-05-24 |
2016-08-09 |
Federal Law Enforcement Development Services, Inc. |
LED light control assembly and system
|
US8692286B2
(en)
|
2007-12-14 |
2014-04-08 |
Philips Lumileds Lighing Company LLC |
Light emitting device with bonded interface
|
EP2240968A1
(de)
|
2008-02-08 |
2010-10-20 |
Illumitex, Inc. |
System und verfahren zur bildung einer emitterschicht
|
TWI362769B
(en)
|
2008-05-09 |
2012-04-21 |
Univ Nat Chiao Tung |
Light emitting device and fabrication method therefor
|
TW201034256A
(en)
|
2008-12-11 |
2010-09-16 |
Illumitex Inc |
Systems and methods for packaging light-emitting diode devices
|
US8890773B1
(en)
|
2009-04-01 |
2014-11-18 |
Federal Law Enforcement Development Services, Inc. |
Visible light transceiver glasses
|
US8449128B2
(en)
|
2009-08-20 |
2013-05-28 |
Illumitex, Inc. |
System and method for a lens and phosphor layer
|
US8585253B2
(en)
|
2009-08-20 |
2013-11-19 |
Illumitex, Inc. |
System and method for color mixing lens array
|
WO2012097291A1
(en)
|
2011-01-14 |
2012-07-19 |
Federal Law Enforcement Development Services, Inc. |
Method of providing lumens and tracking of lumen consumption
|
WO2014160096A1
(en)
|
2013-03-13 |
2014-10-02 |
Federal Law Enforcement Development Services, Inc. |
Led light control and management system
|
US20150198941A1
(en)
|
2014-01-15 |
2015-07-16 |
John C. Pederson |
Cyber Life Electronic Networking and Commerce Operating Exchange
|
DE102014114613B4
(de)
|
2014-10-08 |
2023-10-12 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl an strahlungsemittierenden Halbleiterchips und optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip
|
US20170048953A1
(en)
|
2015-08-11 |
2017-02-16 |
Federal Law Enforcement Development Services, Inc. |
Programmable switch and system
|