DE69525700T2 - Verfahren zur Herstellung einer lichtemittierenden Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer lichtemittierenden Halbleitervorrichtung

Info

Publication number
DE69525700T2
DE69525700T2 DE69525700T DE69525700T DE69525700T2 DE 69525700 T2 DE69525700 T2 DE 69525700T2 DE 69525700 T DE69525700 T DE 69525700T DE 69525700 T DE69525700 T DE 69525700T DE 69525700 T2 DE69525700 T2 DE 69525700T2
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525700T
Other languages
English (en)
Other versions
DE69525700D1 (de
Inventor
Nobuhiko Noto
Keizo Adomi
Takao Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69525700D1 publication Critical patent/DE69525700D1/de
Publication of DE69525700T2 publication Critical patent/DE69525700T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
DE69525700T 1994-09-22 1995-08-17 Verfahren zur Herstellung einer lichtemittierenden Halbleitervorrichtung Expired - Fee Related DE69525700T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22828694A JP2871477B2 (ja) 1994-09-22 1994-09-22 半導体発光装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69525700D1 DE69525700D1 (de) 2002-04-11
DE69525700T2 true DE69525700T2 (de) 2002-08-01

Family

ID=16874096

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525700T Expired - Fee Related DE69525700T2 (de) 1994-09-22 1995-08-17 Verfahren zur Herstellung einer lichtemittierenden Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5600158A (de)
EP (1) EP0703630B1 (de)
JP (1) JP2871477B2 (de)
DE (1) DE69525700T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122324B2 (ja) * 1995-02-20 2001-01-09 三菱電線工業株式会社 半導体発光素子
JP3233569B2 (ja) * 1996-03-22 2001-11-26 シャープ株式会社 半導体発光素子
CN1114959C (zh) * 1996-05-30 2003-07-16 罗姆股份有限公司 半导体发光器件及其制造方法
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
WO1998052229A1 (en) * 1997-05-14 1998-11-19 Research Triangle Institute Light emitting device contact layers having substantially equal spreading resistance and method of manufacture
US6107647A (en) * 1997-05-15 2000-08-22 Rohm Co. Ltd. Semiconductor AlGaInP light emitting device
GB2344457B (en) * 1998-12-02 2000-12-27 Arima Optoelectronics Corp Semiconductor devices
JP3472714B2 (ja) * 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法
US20040227151A1 (en) 2003-03-31 2004-11-18 Hitachi Cable, Ltd. Light emitting diode
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
JP2008066514A (ja) * 2006-09-07 2008-03-21 Hitachi Cable Ltd 半導体発光素子用エピタキシャルウェハ及び半導体発光素子
JP4903643B2 (ja) * 2007-07-12 2012-03-28 株式会社東芝 半導体発光素子
EP2427924A1 (de) 2009-05-05 2012-03-14 3M Innovative Properties Company Reemittierende halbleiterträgeranordnungen zur verwendung mit leds und herstellungsverfahren
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
WO2011008474A1 (en) 2009-06-30 2011-01-20 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
KR101622309B1 (ko) 2010-12-16 2016-05-18 삼성전자주식회사 나노구조의 발광소자
CN104641475B (zh) 2012-06-20 2018-08-21 南洋理工大学 一种发光装置
KR102163987B1 (ko) * 2014-05-30 2020-10-12 엘지이노텍 주식회사 발광소자
KR102200023B1 (ko) * 2014-06-20 2021-01-11 엘지이노텍 주식회사 발광소자
CN114420814A (zh) * 2022-04-01 2022-04-29 江西兆驰半导体有限公司 一种led外延片、外延生长方法及led芯片
CN115305566A (zh) * 2022-10-12 2022-11-08 广州粤芯半导体技术有限公司 外延层的制备方法以及含外延层的半导体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2681352B2 (ja) * 1987-07-31 1997-11-26 信越半導体 株式会社 発光半導体素子
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2900754B2 (ja) * 1993-05-31 1999-06-02 信越半導体株式会社 ＡｌＧａＩｎＰ系発光装置
JPH0794781A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 面発光型半導体発光ダイオード

Also Published As

Publication number Publication date
EP0703630A3 (de) 1996-07-31
EP0703630B1 (de) 2002-03-06
EP0703630A2 (de) 1996-03-27
JPH0897467A (ja) 1996-04-12
US5600158A (en) 1997-02-04
JP2871477B2 (ja) 1999-03-17
DE69525700D1 (de) 2002-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee