US5499733A
(en)
*
|
1992-09-17 |
1996-03-19 |
Luxtron Corporation |
Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
|
US7037403B1
(en)
|
1992-12-28 |
2006-05-02 |
Applied Materials Inc. |
In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
|
US6614529B1
(en)
|
1992-12-28 |
2003-09-02 |
Applied Materials, Inc. |
In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
|
US5658183A
(en)
*
|
1993-08-25 |
1997-08-19 |
Micron Technology, Inc. |
System for real-time control of semiconductor wafer polishing including optical monitoring
|
US5700180A
(en)
|
1993-08-25 |
1997-12-23 |
Micron Technology, Inc. |
System for real-time control of semiconductor wafer polishing
|
US5643060A
(en)
*
|
1993-08-25 |
1997-07-01 |
Micron Technology, Inc. |
System for real-time control of semiconductor wafer polishing including heater
|
US5891352A
(en)
|
1993-09-16 |
1999-04-06 |
Luxtron Corporation |
Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
|
US5473433A
(en)
*
|
1993-12-07 |
1995-12-05 |
At&T Corp. |
Method of high yield manufacture of VLSI type integrated circuit devices by determining critical surface characteristics of mounting films
|
US5607341A
(en)
|
1994-08-08 |
1997-03-04 |
Leach; Michael A. |
Method and structure for polishing a wafer during manufacture of integrated circuits
|
US5791969A
(en)
*
|
1994-11-01 |
1998-08-11 |
Lund; Douglas E. |
System and method of automatically polishing semiconductor wafers
|
JPH08174411A
(ja)
*
|
1994-12-22 |
1996-07-09 |
Ebara Corp |
ポリッシング装置
|
DE69635816T2
(de)
*
|
1995-03-28 |
2006-10-12 |
Applied Materials, Inc., Santa Clara |
Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
|
US6876454B1
(en)
*
|
1995-03-28 |
2005-04-05 |
Applied Materials, Inc. |
Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
|
US6719818B1
(en)
|
1995-03-28 |
2004-04-13 |
Applied Materials, Inc. |
Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
|
US5964643A
(en)
*
|
1995-03-28 |
1999-10-12 |
Applied Materials, Inc. |
Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
|
US5893796A
(en)
*
|
1995-03-28 |
1999-04-13 |
Applied Materials, Inc. |
Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
|
US6537133B1
(en)
*
|
1995-03-28 |
2003-03-25 |
Applied Materials, Inc. |
Method for in-situ endpoint detection for chemical mechanical polishing operations
|
US6676717B1
(en)
|
1995-03-28 |
2004-01-13 |
Applied Materials Inc |
Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
|
IL113829A
(en)
|
1995-05-23 |
2000-12-06 |
Nova Measuring Instr Ltd |
Apparatus for optical inspection of wafers during polishing
|
US20070123151A1
(en)
*
|
1995-05-23 |
2007-05-31 |
Nova Measuring Instruments Ltd |
Apparatus for optical inspection of wafers during polishing
|
US7169015B2
(en)
*
|
1995-05-23 |
2007-01-30 |
Nova Measuring Instruments Ltd. |
Apparatus for optical inspection of wafers during processing
|
US5722875A
(en)
*
|
1995-05-30 |
1998-03-03 |
Tokyo Electron Limited |
Method and apparatus for polishing
|
US5708506A
(en)
*
|
1995-07-03 |
1998-01-13 |
Applied Materials, Inc. |
Apparatus and method for detecting surface roughness in a chemical polishing pad conditioning process
|
JP4734269B2
(ja)
*
|
1995-07-20 |
2011-07-27 |
株式会社荏原製作所 |
ポリッシング方法
|
US5838447A
(en)
*
|
1995-07-20 |
1998-11-17 |
Ebara Corporation |
Polishing apparatus including thickness or flatness detector
|
US5695601A
(en)
*
|
1995-12-27 |
1997-12-09 |
Kabushiki Kaisha Toshiba |
Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method
|
US6010538A
(en)
*
|
1996-01-11 |
2000-01-04 |
Luxtron Corporation |
In situ technique for monitoring and controlling a process of chemical-mechanical-polishing via a radiative communication link
|
US5777739A
(en)
*
|
1996-02-16 |
1998-07-07 |
Micron Technology, Inc. |
Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers
|
US6075606A
(en)
|
1996-02-16 |
2000-06-13 |
Doan; Trung T. |
Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates
|
US5659492A
(en)
*
|
1996-03-19 |
1997-08-19 |
International Business Machines Corporation |
Chemical mechanical polishing endpoint process control
|
US6074287A
(en)
*
|
1996-04-12 |
2000-06-13 |
Nikon Corporation |
Semiconductor wafer polishing apparatus
|
US5762536A
(en)
*
|
1996-04-26 |
1998-06-09 |
Lam Research Corporation |
Sensors for a linear polisher
|
US5910846A
(en)
*
|
1996-05-16 |
1999-06-08 |
Micron Technology, Inc. |
Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers
|
US5663797A
(en)
*
|
1996-05-16 |
1997-09-02 |
Micron Technology, Inc. |
Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers
|
US5643050A
(en)
*
|
1996-05-23 |
1997-07-01 |
Industrial Technology Research Institute |
Chemical/mechanical polish (CMP) thickness monitor
|
WO1998005066A2
(en)
*
|
1996-07-26 |
1998-02-05 |
Speedfam Corporation |
Methods and apparatus for the in-process detection and measurement of thin film layers
|
US5872633A
(en)
*
|
1996-07-26 |
1999-02-16 |
Speedfam Corporation |
Methods and apparatus for detecting removal of thin film layers during planarization
|
US5958148A
(en)
*
|
1996-07-26 |
1999-09-28 |
Speedfam-Ipec Corporation |
Method for cleaning workpiece surfaces and monitoring probes during workpiece processing
|
SG126724A1
(en)
*
|
1996-08-16 |
2006-11-29 |
Applied Materials Inc |
Polishing pad for transparent window
|
US5846882A
(en)
*
|
1996-10-03 |
1998-12-08 |
Applied Materials, Inc. |
Endpoint detector for a chemical mechanical polishing system
|
JP3011113B2
(ja)
*
|
1996-11-15 |
2000-02-21 |
日本電気株式会社 |
基板の研磨方法及び研磨装置
|
JPH10166262A
(ja)
*
|
1996-12-10 |
1998-06-23 |
Nikon Corp |
研磨装置
|
US5897371A
(en)
*
|
1996-12-19 |
1999-04-27 |
Cypress Semiconductor Corp. |
Alignment process compatible with chemical mechanical polishing
|
US5816895A
(en)
*
|
1997-01-17 |
1998-10-06 |
Tokyo Seimitsu Co., Ltd. |
Surface grinding method and apparatus
|
US6328642B1
(en)
|
1997-02-14 |
2001-12-11 |
Lam Research Corporation |
Integrated pad and belt for chemical mechanical polishing
|
US5865665A
(en)
*
|
1997-02-14 |
1999-02-02 |
Yueh; William |
In-situ endpoint control apparatus for semiconductor wafer polishing process
|
US5838448A
(en)
*
|
1997-03-11 |
1998-11-17 |
Nikon Corporation |
CMP variable angle in situ sensor
|
US6102775A
(en)
*
|
1997-04-18 |
2000-08-15 |
Nikon Corporation |
Film inspection method
|
DE19720623C1
(de)
*
|
1997-05-16 |
1998-11-05 |
Siemens Ag |
Poliervorrichtung und Poliertuch
|
US6111634A
(en)
*
|
1997-05-28 |
2000-08-29 |
Lam Research Corporation |
Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
|
US6146248A
(en)
*
|
1997-05-28 |
2000-11-14 |
Lam Research Corporation |
Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
|
US6108091A
(en)
|
1997-05-28 |
2000-08-22 |
Lam Research Corporation |
Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
|
JP3450651B2
(ja)
*
|
1997-06-10 |
2003-09-29 |
キヤノン株式会社 |
研磨方法及びそれを用いた研磨装置
|
US5975994A
(en)
*
|
1997-06-11 |
1999-11-02 |
Micron Technology, Inc. |
Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
|
US5985679A
(en)
*
|
1997-06-12 |
1999-11-16 |
Lsi Logic Corporation |
Automated endpoint detection system during chemical-mechanical polishing
|
US5999264A
(en)
*
|
1997-06-26 |
1999-12-07 |
Mitutoyo Corporation |
On-the-fly optical interference measurement device, machining device provided with the measurement device, and machine tool suited to on-the-fly optical measurement
|
US6028669A
(en)
*
|
1997-07-23 |
2000-02-22 |
Luxtron Corporation |
Signal processing for in situ monitoring of the formation or removal of a transparent layer
|
US5913713A
(en)
*
|
1997-07-31 |
1999-06-22 |
International Business Machines Corporation |
CMP polishing pad backside modifications for advantageous polishing results
|
US6007408A
(en)
*
|
1997-08-21 |
1999-12-28 |
Micron Technology, Inc. |
Method and apparatus for endpointing mechanical and chemical-mechanical polishing of substrates
|
TW374050B
(en)
*
|
1997-10-31 |
1999-11-11 |
Applied Materials Inc |
Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing
|
TW421620B
(en)
*
|
1997-12-03 |
2001-02-11 |
Siemens Ag |
Device and method to control an end-point during polish of components (especially semiconductor components)
|
US6332470B1
(en)
|
1997-12-30 |
2001-12-25 |
Boris Fishkin |
Aerosol substrate cleaner
|
US6068539A
(en)
*
|
1998-03-10 |
2000-05-30 |
Lam Research Corporation |
Wafer polishing device with movable window
|
US6248000B1
(en)
|
1998-03-24 |
2001-06-19 |
Nikon Research Corporation Of America |
Polishing pad thinning to optically access a semiconductor wafer surface
|
US6132289A
(en)
*
|
1998-03-31 |
2000-10-17 |
Lam Research Corporation |
Apparatus and method for film thickness measurement integrated into a wafer load/unload unit
|
US6271047B1
(en)
*
|
1998-05-21 |
2001-08-07 |
Nikon Corporation |
Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
|
US6361646B1
(en)
*
|
1998-06-08 |
2002-03-26 |
Speedfam-Ipec Corporation |
Method and apparatus for endpoint detection for chemical mechanical polishing
|
US6106662A
(en)
*
|
1998-06-08 |
2000-08-22 |
Speedfam-Ipec Corporation |
Method and apparatus for endpoint detection for chemical mechanical polishing
|
US6395130B1
(en)
*
|
1998-06-08 |
2002-05-28 |
Speedfam-Ipec Corporation |
Hydrophobic optical endpoint light pipes for chemical mechanical polishing
|
US6261152B1
(en)
|
1998-07-16 |
2001-07-17 |
Nikon Research Corporation Of America |
Heterdoyne Thickness Monitoring System
|
DE19833052B4
(de)
*
|
1998-07-22 |
2004-04-29 |
Mosel Vitelic Inc. |
Verfahren und Gerät zur Endpunkterfassung beim chemisch mechanischen Polieren
|
US5972787A
(en)
*
|
1998-08-18 |
1999-10-26 |
International Business Machines Corp. |
CMP process using indicator areas to determine endpoint
|
TW398036B
(en)
*
|
1998-08-18 |
2000-07-11 |
Promos Technologies Inc |
Method of monitoring of chemical mechanical polishing end point and uniformity
|
US6352466B1
(en)
|
1998-08-31 |
2002-03-05 |
Micron Technology, Inc. |
Method and apparatus for wireless transfer of chemical-mechanical planarization measurements
|
US6046111A
(en)
*
|
1998-09-02 |
2000-04-04 |
Micron Technology, Inc. |
Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates
|
US6186865B1
(en)
|
1998-10-29 |
2001-02-13 |
Lam Research Corporation |
Apparatus and method for performing end point detection on a linear planarization tool
|
US6325706B1
(en)
|
1998-10-29 |
2001-12-04 |
Lam Research Corporation |
Use of zeta potential during chemical mechanical polishing for end point detection
|
US6159073A
(en)
*
|
1998-11-02 |
2000-12-12 |
Applied Materials, Inc. |
Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
|
US6863593B1
(en)
*
|
1998-11-02 |
2005-03-08 |
Applied Materials, Inc. |
Chemical mechanical polishing a substrate having a filler layer and a stop layer
|
US6280289B1
(en)
*
|
1998-11-02 |
2001-08-28 |
Applied Materials, Inc. |
Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers
|
JP4484370B2
(ja)
|
1998-11-02 |
2010-06-16 |
アプライド マテリアルズ インコーポレイテッド |
基板上のメタル層の化学機械研磨に関して終点を決定するための方法及び基板のメタル層を研磨するための装置
|
US6204922B1
(en)
|
1998-12-11 |
2001-03-20 |
Filmetrics, Inc. |
Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample
|
US6172756B1
(en)
|
1998-12-11 |
2001-01-09 |
Filmetrics, Inc. |
Rapid and accurate end point detection in a noisy environment
|
US6102776A
(en)
*
|
1999-01-06 |
2000-08-15 |
International Business Machines Corporation |
Apparatus and method for controlling polishing of integrated circuit substrates
|
US6024628A
(en)
*
|
1999-01-22 |
2000-02-15 |
United Microelectronics Corp. |
Method of determining real time removal rate for polishing
|
US6247998B1
(en)
|
1999-01-25 |
2001-06-19 |
Applied Materials, Inc. |
Method and apparatus for determining substrate layer thickness during chemical mechanical polishing
|
US6716085B2
(en)
|
2001-12-28 |
2004-04-06 |
Applied Materials Inc. |
Polishing pad with transparent window
|
US6994607B2
(en)
*
|
2001-12-28 |
2006-02-07 |
Applied Materials, Inc. |
Polishing pad with window
|
US20040082271A1
(en)
*
|
1999-01-25 |
2004-04-29 |
Wiswesser Andreas Norbert |
Polishing pad with window
|
US6190234B1
(en)
|
1999-01-25 |
2001-02-20 |
Applied Materials, Inc. |
Endpoint detection with light beams of different wavelengths
|
US6179709B1
(en)
*
|
1999-02-04 |
2001-01-30 |
Applied Materials, Inc. |
In-situ monitoring of linear substrate polishing operations
|
EP1068928A3
(de)
*
|
1999-02-11 |
2003-08-13 |
Applied Materials, Inc. |
Chemisch-mechanisches Polierverfahren und Bauelemente
|
US6179688B1
(en)
*
|
1999-03-17 |
2001-01-30 |
Advanced Micro Devices, Inc. |
Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation
|
AU4034200A
(en)
*
|
1999-03-26 |
2000-10-16 |
Speed-Fam-Ipec Corporation |
Optical endpoint detection system for rotational chemical mechanical polishing
|
US6071177A
(en)
*
|
1999-03-30 |
2000-06-06 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Method and apparatus for determining end point in a polishing process
|
WO2000060650A1
(fr)
*
|
1999-03-31 |
2000-10-12 |
Nikon Corporation |
Corps de polissage, dispositif de polissage, procede de reglage du dispositif de polissage, dispositif de mesure de l'epaisseur du film poli ou du point terminal de polissage, procede de fabrication d'un dispositif a semi-conducteur
|
US6213845B1
(en)
*
|
1999-04-26 |
2001-04-10 |
Micron Technology, Inc. |
Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
|
US6334807B1
(en)
|
1999-04-30 |
2002-01-01 |
International Business Machines Corporation |
Chemical mechanical polishing in-situ end point system
|
WO2000071971A1
(en)
*
|
1999-05-24 |
2000-11-30 |
Luxtron Corporation |
Optical techniques for measuring layer thicknesses
|
US6570662B1
(en)
|
1999-05-24 |
2003-05-27 |
Luxtron Corporation |
Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
|
US6146242A
(en)
|
1999-06-11 |
2000-11-14 |
Strasbaugh, Inc. |
Optical view port for chemical mechanical planarization endpoint detection
|
US6224460B1
(en)
|
1999-06-30 |
2001-05-01 |
Vlsi Technology, Inc. |
Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process
|
US6776692B1
(en)
*
|
1999-07-09 |
2004-08-17 |
Applied Materials Inc. |
Closed-loop control of wafer polishing in a chemical mechanical polishing system
|
US6273792B1
(en)
*
|
1999-08-11 |
2001-08-14 |
Speedfam-Ipec Corporation |
Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing
|
US6406363B1
(en)
|
1999-08-31 |
2002-06-18 |
Lam Research Corporation |
Unsupported chemical mechanical polishing belt
|
US6383934B1
(en)
|
1999-09-02 |
2002-05-07 |
Micron Technology, Inc. |
Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
|
US6524164B1
(en)
|
1999-09-14 |
2003-02-25 |
Applied Materials, Inc. |
Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
|
US6671051B1
(en)
|
1999-09-15 |
2003-12-30 |
Kla-Tencor |
Apparatus and methods for detecting killer particles during chemical mechanical polishing
|
US6628397B1
(en)
|
1999-09-15 |
2003-09-30 |
Kla-Tencor |
Apparatus and methods for performing self-clearing optical measurements
|
US6358130B1
(en)
|
1999-09-29 |
2002-03-19 |
Rodel Holdings, Inc. |
Polishing pad
|
US6726528B2
(en)
*
|
2002-05-14 |
2004-04-27 |
Strasbaugh |
Polishing pad with optical sensor
|
US6976901B1
(en)
*
|
1999-10-27 |
2005-12-20 |
Strasbaugh |
In situ feature height measurement
|
US6629874B1
(en)
*
|
1999-10-27 |
2003-10-07 |
Strasbaugh |
Feature height measurement during CMP
|
US6437868B1
(en)
*
|
1999-10-28 |
2002-08-20 |
Agere Systems Guardian Corp. |
In-situ automated contactless thickness measurement for wafer thinning
|
US6306768B1
(en)
|
1999-11-17 |
2001-10-23 |
Micron Technology, Inc. |
Method for planarizing microelectronic substrates having apertures
|
US6580508B1
(en)
*
|
1999-11-29 |
2003-06-17 |
United Microelectronics Corp. |
Method for monitoring a semiconductor wafer in a chemical mechanical polishing process
|
IL133326A0
(en)
*
|
1999-12-06 |
2001-04-30 |
Nova Measuring Instr Ltd |
Method and system for endpoint detection
|
JP3782629B2
(ja)
*
|
1999-12-13 |
2006-06-07 |
株式会社荏原製作所 |
膜厚測定方法及び膜厚測定装置
|
JP3854056B2
(ja)
*
|
1999-12-13 |
2006-12-06 |
株式会社荏原製作所 |
基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置
|
US6399501B2
(en)
*
|
1999-12-13 |
2002-06-04 |
Applied Materials, Inc. |
Method and apparatus for detecting polishing endpoint with optical monitoring
|
US6707540B1
(en)
|
1999-12-23 |
2004-03-16 |
Kla-Tencor Corporation |
In-situ metalization monitoring using eddy current and optical measurements
|
EP1244907A1
(de)
*
|
1999-12-23 |
2002-10-02 |
KLA-Tencor Corporation |
Vor-ort-überwachung für metallisationsprozesse unter verwendung von wirbelstrommessungen und optischen messungen
|
US6433541B1
(en)
|
1999-12-23 |
2002-08-13 |
Kla-Tencor Corporation |
In-situ metalization monitoring using eddy current measurements during the process for removing the film
|
JP3259225B2
(ja)
*
|
1999-12-27 |
2002-02-25 |
株式会社ニコン |
研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス
|
JP3684972B2
(ja)
*
|
2000-01-13 |
2005-08-17 |
Tdk株式会社 |
加工装置および方法
|
KR100718737B1
(ko)
*
|
2000-01-17 |
2007-05-15 |
가부시키가이샤 에바라 세이사꾸쇼 |
폴리싱 장치
|
JP3907414B2
(ja)
*
|
2000-01-17 |
2007-04-18 |
株式会社荏原製作所 |
ポリッシング装置
|
KR20010076353A
(ko)
*
|
2000-01-18 |
2001-08-11 |
조셉 제이. 스위니 |
2단계 화학 기계적 연마공정의 광학적 모니터링 방법
|
US6506097B1
(en)
|
2000-01-18 |
2003-01-14 |
Applied Materials, Inc. |
Optical monitoring in a two-step chemical mechanical polishing process
|
JP3506114B2
(ja)
*
|
2000-01-25 |
2004-03-15 |
株式会社ニコン |
モニタ装置及びこのモニタ装置を具えた研磨装置及び研磨方法
|
US6383058B1
(en)
|
2000-01-28 |
2002-05-07 |
Applied Materials, Inc. |
Adaptive endpoint detection for chemical mechanical polishing
|
US6309276B1
(en)
|
2000-02-01 |
2001-10-30 |
Applied Materials, Inc. |
Endpoint monitoring with polishing rate change
|
US6368182B2
(en)
*
|
2000-02-04 |
2002-04-09 |
Nova Measuring Instruments Ltd. |
Apparatus for optical inspection of wafers during polishing
|
US6368881B1
(en)
|
2000-02-29 |
2002-04-09 |
International Business Machines Corporation |
Wafer thickness control during backside grind
|
US6290572B1
(en)
|
2000-03-23 |
2001-09-18 |
Micron Technology, Inc. |
Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
|
US6313038B1
(en)
|
2000-04-26 |
2001-11-06 |
Micron Technology, Inc. |
Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
|
US6387289B1
(en)
*
|
2000-05-04 |
2002-05-14 |
Micron Technology, Inc. |
Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
|
US6924641B1
(en)
*
|
2000-05-19 |
2005-08-02 |
Applied Materials, Inc. |
Method and apparatus for monitoring a metal layer during chemical mechanical polishing
|
US8485862B2
(en)
|
2000-05-19 |
2013-07-16 |
Applied Materials, Inc. |
Polishing pad for endpoint detection and related methods
|
US6685537B1
(en)
|
2000-06-05 |
2004-02-03 |
Speedfam-Ipec Corporation |
Polishing pad window for a chemical mechanical polishing tool
|
US6612901B1
(en)
|
2000-06-07 |
2003-09-02 |
Micron Technology, Inc. |
Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
|
US6428386B1
(en)
*
|
2000-06-16 |
2002-08-06 |
Micron Technology, Inc. |
Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
|
JP2002001647A
(ja)
*
|
2000-06-19 |
2002-01-08 |
Rodel Nitta Co |
研磨パッド
|
US6495464B1
(en)
|
2000-06-30 |
2002-12-17 |
Lam Research Corporation |
Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
|
US7095511B2
(en)
|
2000-07-06 |
2006-08-22 |
Filmetrics, Inc. |
Method and apparatus for high-speed thickness mapping of patterned thin films
|
US6878038B2
(en)
|
2000-07-10 |
2005-04-12 |
Applied Materials Inc. |
Combined eddy current sensing and optical monitoring for chemical mechanical polishing
|
KR100607167B1
(ko)
*
|
2000-07-20 |
2006-08-01 |
삼성전자주식회사 |
화학 기계적 연마 설비의 앤드 포인트 디텍터 장치
|
US6602724B2
(en)
*
|
2000-07-27 |
2003-08-05 |
Applied Materials, Inc. |
Chemical mechanical polishing of a metal layer with polishing rate monitoring
|
US6476921B1
(en)
|
2000-07-31 |
2002-11-05 |
Asml Us, Inc. |
In-situ method and apparatus for end point detection in chemical mechanical polishing
|
WO2002010729A1
(en)
*
|
2000-07-31 |
2002-02-07 |
Asml Us, Inc. |
In-situ method and apparatus for end point detection in chemical mechanical polishing
|
US7029381B2
(en)
*
|
2000-07-31 |
2006-04-18 |
Aviza Technology, Inc. |
Apparatus and method for chemical mechanical polishing of substrates
|
US6609947B1
(en)
|
2000-08-30 |
2003-08-26 |
Micron Technology, Inc. |
Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates
|
US6447369B1
(en)
|
2000-08-30 |
2002-09-10 |
Micron Technology, Inc. |
Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates
|
US6652764B1
(en)
|
2000-08-31 |
2003-11-25 |
Micron Technology, Inc. |
Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
|
US6426296B1
(en)
|
2000-09-08 |
2002-07-30 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
Method and apparatus for obtaining a precision thickness in semiconductor and other wafers
|
JP4379556B2
(ja)
*
|
2000-09-22 |
2009-12-09 |
ソニー株式会社 |
研磨方法および研磨装置
|
WO2002026445A1
(en)
|
2000-09-29 |
2002-04-04 |
Strasbaugh, Inc. |
Polishing pad with built-in optical sensor
|
EP1324858A1
(de)
|
2000-10-06 |
2003-07-09 |
Cabot Microelectronics Corporation |
Polierkissen mit durchsichtigem füllmaterial
|
US6805613B1
(en)
*
|
2000-10-17 |
2004-10-19 |
Speedfam-Ipec Corporation |
Multiprobe detection system for chemical-mechanical planarization tool
|
US6593238B1
(en)
|
2000-11-27 |
2003-07-15 |
Motorola, Inc. |
Method for determining an endpoint and semiconductor wafer
|
US20020072296A1
(en)
|
2000-11-29 |
2002-06-13 |
Muilenburg Michael J. |
Abrasive article having a window system for polishing wafers, and methods
|
JP4810728B2
(ja)
*
|
2000-12-04 |
2011-11-09 |
株式会社ニコン |
研磨状況モニタ方法及びその装置、研磨装置、並びに半導体デバイス製造方法
|
US6609961B2
(en)
|
2001-01-09 |
2003-08-26 |
Lam Research Corporation |
Chemical mechanical planarization belt assembly and method of assembly
|
US6623331B2
(en)
|
2001-02-16 |
2003-09-23 |
Cabot Microelectronics Corporation |
Polishing disk with end-point detection port
|
WO2002070200A1
(en)
*
|
2001-03-01 |
2002-09-12 |
Cabot Microelectronics Corporation |
Method for manufacturing a polishing pad having a compressed translucent region
|
JP3844973B2
(ja)
*
|
2001-03-16 |
2006-11-15 |
大日本スクリーン製造株式会社 |
基板の研磨終点検出
|
US6608495B2
(en)
|
2001-03-19 |
2003-08-19 |
Applied Materials, Inc. |
Eddy-optic sensor for object inspection
|
US6491569B2
(en)
|
2001-04-19 |
2002-12-10 |
Speedfam-Ipec Corporation |
Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
|
US6676482B2
(en)
|
2001-04-20 |
2004-01-13 |
Speedfam-Ipec Corporation |
Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
|
US6966816B2
(en)
*
|
2001-05-02 |
2005-11-22 |
Applied Materials, Inc. |
Integrated endpoint detection system with optical and eddy current monitoring
|
US6514775B2
(en)
*
|
2001-06-29 |
2003-02-04 |
Kla-Tencor Technologies Corporation |
In-situ end point detection for semiconductor wafer polishing
|
US6866566B2
(en)
*
|
2001-08-24 |
2005-03-15 |
Micron Technology, Inc. |
Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces
|
US6722943B2
(en)
*
|
2001-08-24 |
2004-04-20 |
Micron Technology, Inc. |
Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
|
US6666749B2
(en)
|
2001-08-30 |
2003-12-23 |
Micron Technology, Inc. |
Apparatus and method for enhanced processing of microelectronic workpieces
|
US6727107B1
(en)
|
2001-09-07 |
2004-04-27 |
Lsi Logic Corporation |
Method of testing the processing of a semiconductor wafer on a CMP apparatus
|
US6722249B2
(en)
|
2001-11-06 |
2004-04-20 |
Rodel Holdings, Inc |
Method of fabricating a polishing pad having an optical window
|
US6669539B1
(en)
*
|
2001-11-14 |
2003-12-30 |
Lam Research Corporation |
System for in-situ monitoring of removal rate/thickness of top layer during planarization
|
US6741913B2
(en)
*
|
2001-12-11 |
2004-05-25 |
International Business Machines Corporation |
Technique for noise reduction in a torque-based chemical-mechanical polishing endpoint detection system
|
US6599765B1
(en)
*
|
2001-12-12 |
2003-07-29 |
Lam Research Corporation |
Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
|
US6838149B2
(en)
*
|
2001-12-13 |
2005-01-04 |
3M Innovative Properties Company |
Abrasive article for the deposition and polishing of a conductive material
|
US6811466B1
(en)
*
|
2001-12-28 |
2004-11-02 |
Applied Materials, Inc. |
System and method for in-line metal profile measurement
|
US6878039B2
(en)
|
2002-01-28 |
2005-04-12 |
Speedfam-Ipec Corporation |
Polishing pad window for a chemical-mechanical polishing tool
|
US7001242B2
(en)
*
|
2002-02-06 |
2006-02-21 |
Applied Materials, Inc. |
Method and apparatus of eddy current monitoring for chemical mechanical polishing
|
US7131889B1
(en)
*
|
2002-03-04 |
2006-11-07 |
Micron Technology, Inc. |
Method for planarizing microelectronic workpieces
|
US6524176B1
(en)
*
|
2002-03-25 |
2003-02-25 |
Macronix International Co. Ltd. |
Polishing pad
|
US6806948B2
(en)
*
|
2002-03-29 |
2004-10-19 |
Lam Research Corporation |
System and method of broad band optical end point detection for film change indication
|
JP2003318140A
(ja)
*
|
2002-04-26 |
2003-11-07 |
Applied Materials Inc |
研磨方法及び装置
|
US6696005B2
(en)
|
2002-05-13 |
2004-02-24 |
Strasbaugh |
Method for making a polishing pad with built-in optical sensor
|
US7363099B2
(en)
*
|
2002-06-07 |
2008-04-22 |
Cadence Design Systems, Inc. |
Integrated circuit metrology
|
EP1532670A4
(de)
*
|
2002-06-07 |
2007-09-12 |
Praesagus Inc |
Charakterisierung und reduktion der variation f r integrierte schaltungen
|
US7853904B2
(en)
*
|
2002-06-07 |
2010-12-14 |
Cadence Design Systems, Inc. |
Method and system for handling process related variations for integrated circuits based upon reflections
|
US6869335B2
(en)
|
2002-07-08 |
2005-03-22 |
Micron Technology, Inc. |
Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
|
US7341502B2
(en)
|
2002-07-18 |
2008-03-11 |
Micron Technology, Inc. |
Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
|
US6860798B2
(en)
|
2002-08-08 |
2005-03-01 |
Micron Technology, Inc. |
Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
|
US7040957B2
(en)
*
|
2002-08-14 |
2006-05-09 |
Novellus Systems Inc. |
Platen and manifold for polishing workpieces
|
US7094695B2
(en)
*
|
2002-08-21 |
2006-08-22 |
Micron Technology, Inc. |
Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization
|
US7004817B2
(en)
*
|
2002-08-23 |
2006-02-28 |
Micron Technology, Inc. |
Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
|
US7011566B2
(en)
*
|
2002-08-26 |
2006-03-14 |
Micron Technology, Inc. |
Methods and systems for conditioning planarizing pads used in planarizing substrates
|
US6841991B2
(en)
*
|
2002-08-29 |
2005-01-11 |
Micron Technology, Inc. |
Planarity diagnostic system, E.G., for microelectronic component test systems
|
US7008299B2
(en)
*
|
2002-08-29 |
2006-03-07 |
Micron Technology, Inc. |
Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces
|
US7029596B2
(en)
*
|
2002-12-02 |
2006-04-18 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Computer integrated manufacturing control system for oxide chemical mechanical polishing
|
US7074114B2
(en)
*
|
2003-01-16 |
2006-07-11 |
Micron Technology, Inc. |
Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces
|
US6676483B1
(en)
*
|
2003-02-03 |
2004-01-13 |
Rodel Holdings, Inc. |
Anti-scattering layer for polishing pad windows
|
US7008295B2
(en)
|
2003-02-04 |
2006-03-07 |
Applied Materials Inc. |
Substrate monitoring during chemical mechanical polishing
|
US7016795B2
(en)
*
|
2003-02-04 |
2006-03-21 |
Applied Materials Inc. |
Signal improvement in eddy current sensing
|
US6832947B2
(en)
*
|
2003-02-10 |
2004-12-21 |
Cabot Microelectronics Corporation |
CMP pad with composite transparent window
|
US6960120B2
(en)
|
2003-02-10 |
2005-11-01 |
Cabot Microelectronics Corporation |
CMP pad with composite transparent window
|
US6884152B2
(en)
|
2003-02-11 |
2005-04-26 |
Micron Technology, Inc. |
Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
|
US6872132B2
(en)
*
|
2003-03-03 |
2005-03-29 |
Micron Technology, Inc. |
Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
|
US6945845B2
(en)
*
|
2003-03-04 |
2005-09-20 |
Applied Materials, Inc. |
Chemical mechanical polishing apparatus with non-conductive elements
|
US6913514B2
(en)
*
|
2003-03-14 |
2005-07-05 |
Ebara Technologies, Inc. |
Chemical mechanical polishing endpoint detection system and method
|
US6930782B1
(en)
|
2003-03-28 |
2005-08-16 |
Lam Research Corporation |
End point detection with imaging matching in semiconductor processing
|
US7131891B2
(en)
*
|
2003-04-28 |
2006-11-07 |
Micron Technology, Inc. |
Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
|
US6935929B2
(en)
|
2003-04-28 |
2005-08-30 |
Micron Technology, Inc. |
Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
|
KR100541545B1
(ko)
*
|
2003-06-16 |
2006-01-11 |
삼성전자주식회사 |
화학기계적 연마 장비의 연마 테이블
|
US6884156B2
(en)
|
2003-06-17 |
2005-04-26 |
Cabot Microelectronics Corporation |
Multi-layer polishing pad material for CMP
|
US7008296B2
(en)
*
|
2003-06-18 |
2006-03-07 |
Applied Materials, Inc. |
Data processing for monitoring chemical mechanical polishing
|
US7153185B1
(en)
|
2003-08-18 |
2006-12-26 |
Applied Materials, Inc. |
Substrate edge detection
|
US7097537B1
(en)
|
2003-08-18 |
2006-08-29 |
Applied Materials, Inc. |
Determination of position of sensor measurements during polishing
|
US7025658B2
(en)
*
|
2003-08-18 |
2006-04-11 |
Applied Materials, Inc. |
Platen and head rotation rates for monitoring chemical mechanical polishing
|
US7030603B2
(en)
*
|
2003-08-21 |
2006-04-18 |
Micron Technology, Inc. |
Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece
|
JP4464642B2
(ja)
*
|
2003-09-10 |
2010-05-19 |
株式会社荏原製作所 |
研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法
|
US7195539B2
(en)
*
|
2003-09-19 |
2007-03-27 |
Cabot Microelectronics Coporation |
Polishing pad with recessed window
|
US7264536B2
(en)
|
2003-09-23 |
2007-09-04 |
Applied Materials, Inc. |
Polishing pad with window
|
US20050067103A1
(en)
*
|
2003-09-26 |
2005-03-31 |
Applied Materials, Inc. |
Interferometer endpoint monitoring device
|
US7654885B2
(en)
*
|
2003-10-03 |
2010-02-02 |
Applied Materials, Inc. |
Multi-layer polishing pad
|
US20050173259A1
(en)
*
|
2004-02-06 |
2005-08-11 |
Applied Materials, Inc. |
Endpoint system for electro-chemical mechanical polishing
|
US8066552B2
(en)
*
|
2003-10-03 |
2011-11-29 |
Applied Materials, Inc. |
Multi-layer polishing pad for low-pressure polishing
|
US6939211B2
(en)
*
|
2003-10-09 |
2005-09-06 |
Micron Technology, Inc. |
Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
|
US7258602B2
(en)
*
|
2003-10-22 |
2007-08-21 |
Iv Technologies Co., Ltd. |
Polishing pad having grooved window therein and method of forming the same
|
KR100582837B1
(ko)
*
|
2003-12-23 |
2006-05-23 |
동부일렉트로닉스 주식회사 |
웨이퍼 평탄화 장치 및 방법
|
US20050153634A1
(en)
*
|
2004-01-09 |
2005-07-14 |
Cabot Microelectronics Corporation |
Negative poisson's ratio material-containing CMP polishing pad
|
US7315642B2
(en)
*
|
2004-02-12 |
2008-01-01 |
Applied Materials, Israel, Ltd. |
System and method for measuring thin film thickness variations and for compensating for the variations
|
US7086927B2
(en)
*
|
2004-03-09 |
2006-08-08 |
Micron Technology, Inc. |
Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
|
US7204742B2
(en)
*
|
2004-03-25 |
2007-04-17 |
Cabot Microelectronics Corporation |
Polishing pad comprising hydrophobic region and endpoint detection port
|
US6955588B1
(en)
|
2004-03-31 |
2005-10-18 |
Lam Research Corporation |
Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
|
US7120553B2
(en)
*
|
2004-07-22 |
2006-10-10 |
Applied Materials, Inc. |
Iso-reflectance wavelengths
|
US7161247B2
(en)
|
2004-07-28 |
2007-01-09 |
Cabot Microelectronics Corporation |
Polishing composition for noble metals
|
US7066792B2
(en)
*
|
2004-08-06 |
2006-06-27 |
Micron Technology, Inc. |
Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods
|
US7033253B2
(en)
*
|
2004-08-12 |
2006-04-25 |
Micron Technology, Inc. |
Polishing pad conditioners having abrasives and brush elements, and associated systems and methods
|
US8075372B2
(en)
*
|
2004-09-01 |
2011-12-13 |
Cabot Microelectronics Corporation |
Polishing pad with microporous regions
|
US7186574B2
(en)
*
|
2004-09-30 |
2007-03-06 |
Hitachi Global Storage Technologies Netherlands B.V. |
CMP process metrology test structures
|
US7153182B1
(en)
|
2004-09-30 |
2006-12-26 |
Lam Research Corporation |
System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing
|
US7563383B2
(en)
*
|
2004-10-12 |
2009-07-21 |
Cabot Mircroelectronics Corporation |
CMP composition with a polymer additive for polishing noble metals
|
US7524347B2
(en)
*
|
2004-10-28 |
2009-04-28 |
Cabot Microelectronics Corporation |
CMP composition comprising surfactant
|
US7531105B2
(en)
*
|
2004-11-05 |
2009-05-12 |
Cabot Microelectronics Corporation |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
|
US7504044B2
(en)
|
2004-11-05 |
2009-03-17 |
Cabot Microelectronics Corporation |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
|
US20060096179A1
(en)
*
|
2004-11-05 |
2006-05-11 |
Cabot Microelectronics Corporation |
CMP composition containing surface-modified abrasive particles
|
US7311856B2
(en)
*
|
2005-03-30 |
2007-12-25 |
Cabot Microelectronics Corporation |
Polymeric inhibitors for enhanced planarization
|
US20060286906A1
(en)
*
|
2005-06-21 |
2006-12-21 |
Cabot Microelectronics Corporation |
Polishing pad comprising magnetically sensitive particles and method for the use thereof
|
US8062096B2
(en)
*
|
2005-06-30 |
2011-11-22 |
Cabot Microelectronics Corporation |
Use of CMP for aluminum mirror and solar cell fabrication
|
US7264539B2
(en)
*
|
2005-07-13 |
2007-09-04 |
Micron Technology, Inc. |
Systems and methods for removing microfeature workpiece surface defects
|
US7226339B2
(en)
*
|
2005-08-22 |
2007-06-05 |
Applied Materials, Inc. |
Spectrum based endpointing for chemical mechanical polishing
|
US7326105B2
(en)
|
2005-08-31 |
2008-02-05 |
Micron Technology, Inc. |
Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces
|
US7438626B2
(en)
*
|
2005-08-31 |
2008-10-21 |
Micron Technology, Inc. |
Apparatus and method for removing material from microfeature workpieces
|
US7294049B2
(en)
*
|
2005-09-01 |
2007-11-13 |
Micron Technology, Inc. |
Method and apparatus for removing material from microfeature workpieces
|
US7897061B2
(en)
|
2006-02-01 |
2011-03-01 |
Cabot Microelectronics Corporation |
Compositions and methods for CMP of phase change alloys
|
US20070209287A1
(en)
*
|
2006-03-13 |
2007-09-13 |
Cabot Microelectronics Corporation |
Composition and method to polish silicon nitride
|
US7537511B2
(en)
*
|
2006-03-14 |
2009-05-26 |
Micron Technology, Inc. |
Embedded fiber acoustic sensor for CMP process endpoint
|
US8551202B2
(en)
*
|
2006-03-23 |
2013-10-08 |
Cabot Microelectronics Corporation |
Iodate-containing chemical-mechanical polishing compositions and methods
|
US7820067B2
(en)
*
|
2006-03-23 |
2010-10-26 |
Cabot Microelectronics Corporation |
Halide anions for metal removal rate control
|
US8591763B2
(en)
*
|
2006-03-23 |
2013-11-26 |
Cabot Microelectronics Corporation |
Halide anions for metal removal rate control
|
US7497763B2
(en)
*
|
2006-03-27 |
2009-03-03 |
Freescale Semiconductor, Inc. |
Polishing pad, a polishing apparatus, and a process for using the polishing pad
|
JP2007266052A
(ja)
*
|
2006-03-27 |
2007-10-11 |
Nec Electronics Corp |
研磨パッド、cmp装置、研磨パッドの製造方法
|
US7179151B1
(en)
*
|
2006-03-27 |
2007-02-20 |
Freescale Semiconductor, Inc. |
Polishing pad, a polishing apparatus, and a process for using the polishing pad
|
US7115017B1
(en)
*
|
2006-03-31 |
2006-10-03 |
Novellus Systems, Inc. |
Methods for controlling the pressures of adjustable pressure zones of a work piece carrier during chemical mechanical planarization
|
US20070249167A1
(en)
*
|
2006-04-21 |
2007-10-25 |
Cabot Microelectronics Corporation |
CMP method for copper-containing substrates
|
US7585340B2
(en)
*
|
2006-04-27 |
2009-09-08 |
Cabot Microelectronics Corporation |
Polishing composition containing polyether amine
|
US8759216B2
(en)
|
2006-06-07 |
2014-06-24 |
Cabot Microelectronics Corporation |
Compositions and methods for polishing silicon nitride materials
|
US20080220610A1
(en)
*
|
2006-06-29 |
2008-09-11 |
Cabot Microelectronics Corporation |
Silicon oxide polishing method utilizing colloidal silica
|
US7294576B1
(en)
|
2006-06-29 |
2007-11-13 |
Cabot Microelectronics Corporation |
Tunable selectivity slurries in CMP applications
|
US7501346B2
(en)
*
|
2006-07-21 |
2009-03-10 |
Cabot Microelectronics Corporation |
Gallium and chromium ions for oxide rate enhancement
|
US20080020680A1
(en)
*
|
2006-07-24 |
2008-01-24 |
Cabot Microelectronics Corporation |
Rate-enhanced CMP compositions for dielectric films
|
US7264537B1
(en)
*
|
2006-08-04 |
2007-09-04 |
Novellus Systems, Inc. |
Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system
|
US7776230B2
(en)
*
|
2006-08-30 |
2010-08-17 |
Cabot Microelectronics Corporation |
CMP system utilizing halogen adduct
|
US20080105652A1
(en)
*
|
2006-11-02 |
2008-05-08 |
Cabot Microelectronics Corporation |
CMP of copper/ruthenium/tantalum substrates
|
US7837888B2
(en)
*
|
2006-11-13 |
2010-11-23 |
Cabot Microelectronics Corporation |
Composition and method for damascene CMP
|
US9343330B2
(en)
*
|
2006-12-06 |
2016-05-17 |
Cabot Microelectronics Corporation |
Compositions for polishing aluminum/copper and titanium in damascene structures
|
US7754612B2
(en)
*
|
2007-03-14 |
2010-07-13 |
Micron Technology, Inc. |
Methods and apparatuses for removing polysilicon from semiconductor workpieces
|
US20080274674A1
(en)
*
|
2007-05-03 |
2008-11-06 |
Cabot Microelectronics Corporation |
Stacked polishing pad for high temperature applications
|
EP2188344B1
(de)
|
2007-09-21 |
2016-04-27 |
Cabot Microelectronics Corporation |
Polierzusammensetzung und verfahren anhand von aminosilanbehandelten schleifpartikeln
|
JP5519507B2
(ja)
|
2007-09-21 |
2014-06-11 |
キャボット マイクロエレクトロニクス コーポレイション |
アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法
|
US8337278B2
(en)
*
|
2007-09-24 |
2012-12-25 |
Applied Materials, Inc. |
Wafer edge characterization by successive radius measurements
|
US8017524B2
(en)
|
2008-05-23 |
2011-09-13 |
Cabot Microelectronics Corporation |
Stable, high rate silicon slurry
|
US20090305610A1
(en)
*
|
2008-06-06 |
2009-12-10 |
Applied Materials, Inc. |
Multiple window pad assembly
|
TWM347669U
(en)
*
|
2008-06-19 |
2008-12-21 |
Bestac Advanced Material Co Ltd |
Polishing pad and polishing device
|
US7967661B2
(en)
*
|
2008-06-19 |
2011-06-28 |
Micron Technology, Inc. |
Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture
|
JP5619009B2
(ja)
|
2008-09-19 |
2014-11-05 |
キャボット マイクロエレクトロニクス コーポレイションCabot Microelectronics Corporation |
低k誘電体のためのバリアースラリー
|
JP5611214B2
(ja)
|
2008-10-16 |
2014-10-22 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
渦電流利得の補償
|
US8883034B2
(en)
|
2009-09-16 |
2014-11-11 |
Brian Reiss |
Composition and method for polishing bulk silicon
|
US8815110B2
(en)
*
|
2009-09-16 |
2014-08-26 |
Cabot Microelectronics Corporation |
Composition and method for polishing bulk silicon
|
US8697576B2
(en)
|
2009-09-16 |
2014-04-15 |
Cabot Microelectronics Corporation |
Composition and method for polishing polysilicon
|
JP5099111B2
(ja)
*
|
2009-12-24 |
2012-12-12 |
信越半導体株式会社 |
両面研磨装置
|
US9017140B2
(en)
|
2010-01-13 |
2015-04-28 |
Nexplanar Corporation |
CMP pad with local area transparency
|
JP2011245610A
(ja)
*
|
2010-05-31 |
2011-12-08 |
Mitsubishi Electric Corp |
半導体装置の製造方法
|
US8616935B2
(en)
*
|
2010-06-02 |
2013-12-31 |
Applied Materials, Inc. |
Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
|
US9156124B2
(en)
|
2010-07-08 |
2015-10-13 |
Nexplanar Corporation |
Soft polishing pad for polishing a semiconductor substrate
|
US8257545B2
(en)
|
2010-09-29 |
2012-09-04 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
|
WO2012068428A2
(en)
*
|
2010-11-18 |
2012-05-24 |
Cabot Microelectronics Corporation |
Polishing pad comprising transmissive region
|
US9002493B2
(en)
|
2012-02-21 |
2015-04-07 |
Stmicroelectronics, Inc. |
Endpoint detector for a semiconductor processing station and associated methods
|
TWI573864B
(zh)
|
2012-03-14 |
2017-03-11 |
卡博特微電子公司 |
具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之cmp組成物
|
US8916061B2
(en)
|
2012-03-14 |
2014-12-23 |
Cabot Microelectronics Corporation |
CMP compositions selective for oxide and nitride with high removal rate and low defectivity
|
US9156125B2
(en)
*
|
2012-04-11 |
2015-10-13 |
Cabot Microelectronics Corporation |
Polishing pad with light-stable light-transmitting region
|
US8778212B2
(en)
|
2012-05-22 |
2014-07-15 |
Cabot Microelectronics Corporation |
CMP composition containing zirconia particles and method of use
|
US9039914B2
(en)
|
2012-05-23 |
2015-05-26 |
Cabot Microelectronics Corporation |
Polishing composition for nickel-phosphorous-coated memory disks
|
CN104395425A
(zh)
|
2012-06-11 |
2015-03-04 |
嘉柏微电子材料股份公司 |
用于抛光钼的组合物和方法
|
US9633863B2
(en)
|
2012-07-11 |
2017-04-25 |
Cabot Microelectronics Corporation |
Compositions and methods for selective polishing of silicon nitride materials
|
US8821215B2
(en)
|
2012-09-07 |
2014-09-02 |
Cabot Microelectronics Corporation |
Polypyrrolidone polishing composition and method
|
CN103722486B
(zh)
*
|
2012-10-11 |
2016-10-05 |
中芯国际集成电路制造(上海)有限公司 |
一种化学机械研磨方法及装置
|
US8920667B2
(en)
|
2013-01-30 |
2014-12-30 |
Cabot Microelectronics Corporation |
Chemical-mechanical polishing composition containing zirconia and metal oxidizer
|
US20140216498A1
(en)
|
2013-02-06 |
2014-08-07 |
Kwangduk Douglas Lee |
Methods of dry stripping boron-carbon films
|
CN103084968A
(zh)
*
|
2013-02-27 |
2013-05-08 |
上海华力微电子有限公司 |
研磨终点探测方法、装置及研磨机台
|
US9358659B2
(en)
|
2013-03-04 |
2016-06-07 |
Cabot Microelectronics Corporation |
Composition and method for polishing glass
|
US9108290B2
(en)
*
|
2013-03-07 |
2015-08-18 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Multilayer chemical mechanical polishing pad
|
US20140256231A1
(en)
|
2013-03-07 |
2014-09-11 |
Dow Global Technologies Llc |
Multilayer Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window
|
US9186772B2
(en)
|
2013-03-07 |
2015-11-17 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Chemical mechanical polishing pad with broad spectrum, endpoint detection window and method of polishing therewith
|
US8961807B2
(en)
|
2013-03-15 |
2015-02-24 |
Cabot Microelectronics Corporation |
CMP compositions with low solids content and methods related thereto
|
US9165489B2
(en)
|
2013-05-21 |
2015-10-20 |
Cabot Microelectronics Corporation |
CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
|
US8906252B1
(en)
|
2013-05-21 |
2014-12-09 |
Cabot Microelelctronics Corporation |
CMP compositions selective for oxide and nitride with high removal rate and low defectivity
|
US9434859B2
(en)
|
2013-09-24 |
2016-09-06 |
Cabot Microelectronics Corporation |
Chemical-mechanical planarization of polymer films
|
US9279067B2
(en)
|
2013-10-10 |
2016-03-08 |
Cabot Microelectronics Corporation |
Wet-process ceria compositions for polishing substrates, and methods related thereto
|
US9340706B2
(en)
|
2013-10-10 |
2016-05-17 |
Cabot Microelectronics Corporation |
Mixed abrasive polishing compositions
|
US9281210B2
(en)
|
2013-10-10 |
2016-03-08 |
Cabot Microelectronics Corporation |
Wet-process ceria compositions for polishing substrates, and methods related thereto
|
US9909032B2
(en)
|
2014-01-15 |
2018-03-06 |
Cabot Microelectronics Corporation |
Composition and method for polishing memory hard disks
|
JP6423600B2
(ja)
*
|
2014-03-12 |
2018-11-14 |
株式会社荏原製作所 |
膜厚測定装置、及び、研磨装置
|
US9259820B2
(en)
|
2014-03-28 |
2016-02-16 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Chemical mechanical polishing pad with polishing layer and window
|
US9064806B1
(en)
|
2014-03-28 |
2015-06-23 |
Rohm and Haas Electronics Materials CMP Holdings, Inc. |
Soft and conditionable chemical mechanical polishing pad with window
|
US9216489B2
(en)
|
2014-03-28 |
2015-12-22 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Chemical mechanical polishing pad with endpoint detection window
|
US9333620B2
(en)
|
2014-04-29 |
2016-05-10 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Chemical mechanical polishing pad with clear endpoint detection window
|
US9314897B2
(en)
|
2014-04-29 |
2016-04-19 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Chemical mechanical polishing pad with endpoint detection window
|
US9401104B2
(en)
|
2014-05-05 |
2016-07-26 |
Cabot Microelectronics Corporation |
Polishing composition for edge roll-off improvement
|
JP6574244B2
(ja)
|
2014-05-07 |
2019-09-11 |
キャボット マイクロエレクトロニクス コーポレイション |
Cmp用の多層研磨パッド
|
US9425109B2
(en)
|
2014-05-30 |
2016-08-23 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Planarization method, method for polishing wafer, and CMP system
|
US20150355416A1
(en)
*
|
2014-06-06 |
2015-12-10 |
Corning Optical Communications LLC |
Methods and systems for polishing optical fibers
|
US9944828B2
(en)
|
2014-10-21 |
2018-04-17 |
Cabot Microelectronics Corporation |
Slurry for chemical mechanical polishing of cobalt
|
WO2016065067A1
(en)
|
2014-10-21 |
2016-04-28 |
Cabot Microelectronics Corporation |
Cobalt dishing control agents
|
JP6646051B2
(ja)
|
2014-10-21 |
2020-02-14 |
キャボット マイクロエレクトロニクス コーポレイション |
コバルト研磨促進剤
|
EP3209815B1
(de)
|
2014-10-21 |
2021-12-29 |
CMC Materials, Inc. |
Korrosionshemmer sowie entsprechende zusammensetzungen und verfahren
|
US9422455B2
(en)
|
2014-12-12 |
2016-08-23 |
Cabot Microelectronics Corporation |
CMP compositions exhibiting reduced dishing in STI wafer polishing
|
US9803109B2
(en)
|
2015-02-03 |
2017-10-31 |
Cabot Microelectronics Corporation |
CMP composition for silicon nitride removal
|
US9505952B2
(en)
|
2015-03-05 |
2016-11-29 |
Cabot Microelectronics Corporation |
Polishing composition containing ceria abrasive
|
US9758697B2
(en)
|
2015-03-05 |
2017-09-12 |
Cabot Microelectronics Corporation |
Polishing composition containing cationic polymer additive
|
US10414947B2
(en)
|
2015-03-05 |
2019-09-17 |
Cabot Microelectronics Corporation |
Polishing composition containing ceria particles and method of use
|
JP6473050B2
(ja)
*
|
2015-06-05 |
2019-02-20 |
株式会社荏原製作所 |
研磨装置
|
EP3323142A4
(de)
|
2015-07-13 |
2019-03-27 |
Cabot Microelectronics Corporation |
Verfahren und zusammensetzungen zur verarbeitung eines dielektrischen substrats
|
US9528030B1
(en)
|
2015-10-21 |
2016-12-27 |
Cabot Microelectronics Corporation |
Cobalt inhibitor combination for improved dishing
|
WO2017120396A1
(en)
|
2016-01-06 |
2017-07-13 |
Cabot Microelectronics Corporation |
Method of polishing a low-k substrate
|
US10241244B2
(en)
|
2016-07-29 |
2019-03-26 |
Lumentum Operations Llc |
Thin film total internal reflection diffraction grating for single polarization or dual polarization
|
US10294399B2
(en)
|
2017-01-05 |
2019-05-21 |
Cabot Microelectronics Corporation |
Composition and method for polishing silicon carbide
|
TWI789385B
(zh)
|
2017-04-21 |
2023-01-11 |
美商應用材料股份有限公司 |
使用神經網路來監測的拋光裝置
|
US10286517B2
(en)
*
|
2017-08-08 |
2019-05-14 |
Micron Technology, Inc. |
Polishing apparatuses
|
US10898986B2
(en)
|
2017-09-15 |
2021-01-26 |
Applied Materials, Inc. |
Chattering correction for accurate sensor position determination on wafer
|
US20190085205A1
(en)
|
2017-09-15 |
2019-03-21 |
Cabot Microelectronics Corporation |
NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
|
US11043151B2
(en)
|
2017-10-03 |
2021-06-22 |
Cmc Materials, Inc. |
Surface treated abrasive particles for tungsten buff applications
|
TWI825075B
(zh)
|
2018-04-03 |
2023-12-11 |
美商應用材料股份有限公司 |
針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
|
KR102580487B1
(ko)
*
|
2018-06-18 |
2023-09-21 |
주식회사 케이씨텍 |
패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법
|
TWI828706B
(zh)
|
2018-06-20 |
2024-01-11 |
美商應用材料股份有限公司 |
用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
|
US20200164482A1
(en)
*
|
2018-11-28 |
2020-05-28 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Multi-layered windows for use in chemical-mechanical planarization systems
|
US11597854B2
(en)
|
2019-07-16 |
2023-03-07 |
Cmc Materials, Inc. |
Method to increase barrier film removal rate in bulk tungsten slurry
|
US11022427B2
(en)
*
|
2019-07-31 |
2021-06-01 |
SK Hynix Inc. |
Device and method for measuring thickness
|
CN110726682A
(zh)
*
|
2019-09-26 |
2020-01-24 |
山东大学 |
一种原位在线反射光学测量系统及方法
|
CN115135450A
(zh)
|
2020-05-14 |
2022-09-30 |
应用材料公司 |
训练神经网络用于抛光期间的原位监测的技术和抛光系统
|
CN117900999A
(zh)
|
2020-06-24 |
2024-04-19 |
应用材料公司 |
使用研磨垫磨损补偿的基板层厚度确定
|
WO2023197126A1
(zh)
*
|
2022-04-12 |
2023-10-19 |
华为技术有限公司 |
一种光学反射仪和检测待检测样品表面的方法
|
CN115308140A
(zh)
*
|
2022-10-11 |
2022-11-08 |
杭州众硅电子科技有限公司 |
一种化学机械抛光的在线监测装置
|