CA625573A - Electrochemical method and apparatus for measuring the thickness of semiconductive material during etching thereof - Google Patents

Electrochemical method and apparatus for measuring the thickness of semiconductive material during etching thereof

Info

Publication number
CA625573A
CA625573A CA625573DA CA625573A CA 625573 A CA625573 A CA 625573A CA 625573D A CA625573D A CA 625573DA CA 625573 A CA625573 A CA 625573A
Authority
CA
Grant status
Grant
Patent type
Prior art keywords
measuring
thickness
apparatus
material during
semiconductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Inventor
Roschen John
E. Bradley William
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Space Systems Loral LLC
Publication date
Grant date

Links

CA625573A Electrochemical method and apparatus for measuring the thickness of semiconductive material during etching thereof Expired CA625573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA625573T

Publications (1)

Publication Number Publication Date
CA625573A true CA625573A (en) 1961-08-15

Family

ID=35880746

Family Applications (1)

Application Number Title Priority Date Filing Date
CA625573A Expired CA625573A (en) Electrochemical method and apparatus for measuring the thickness of semiconductive material during etching thereof

Country Status (1)

Country Link
CA (1) CA625573A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US6676717B1 (en) 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6849152B2 (en) 1992-12-28 2005-02-01 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US6994607B2 (en) 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US7001242B2 (en) 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US8795029B2 (en) 1995-03-28 2014-08-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for semiconductor processing operations

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7569119B2 (en) 1992-12-28 2009-08-04 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US7024063B2 (en) 1992-12-28 2006-04-04 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US7582183B2 (en) 1992-12-28 2009-09-01 Applied Materials, Inc. Apparatus for detection of thin films during chemical/mechanical polishing planarization
US6849152B2 (en) 1992-12-28 2005-02-01 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US8795029B2 (en) 1995-03-28 2014-08-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for semiconductor processing operations
US6875078B2 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6860791B2 (en) 1995-03-28 2005-03-01 Applied Materials, Inc. Polishing pad for in-situ endpoint detection
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6676717B1 (en) 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US7198544B2 (en) 2001-12-28 2007-04-03 Applied Materials, Inc. Polishing pad with window
US6994607B2 (en) 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US7001242B2 (en) 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing
US7591708B2 (en) 2002-02-06 2009-09-22 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing

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