JP6574244B2 - Cmp用の多層研磨パッド - Google Patents
Cmp用の多層研磨パッド Download PDFInfo
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- JP6574244B2 JP6574244B2 JP2017511151A JP2017511151A JP6574244B2 JP 6574244 B2 JP6574244 B2 JP 6574244B2 JP 2017511151 A JP2017511151 A JP 2017511151A JP 2017511151 A JP2017511151 A JP 2017511151A JP 6574244 B2 JP6574244 B2 JP 6574244B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0045—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by stacking sheets of abrasive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本願は、2014年7月10日出願の米国仮出願第62/022,770号および2014年5月7日出願の米国仮出願第61/989,669号(これらを参照することによってその全体を本明細書の内容とする)の利益を主張する。
この例は、2工程プロセスを用いて本発明の多層研磨パッドを生成する方法を示している。
この例は、本発明のパッド材料のTピール強度解析を、感圧接着剤で互いに結合された同じパッド材料と比較して、説明している。
本発明は、以下の態様を含んでいる。
(1)上面層、中間層および底面層を含む化学機械研磨用の多層の研磨パッドであって、該上面層および該底面層が、該中間層によって互いに結合されており、かつ前記各層が接着剤の使用なしに結合されている研磨パッド。
(2)前記上面層が、研磨表面を含む、(1)記載の研磨パッド。
(3)前記底面層が、ポリカーボネート材料を含む、(1)または(2)記載の研磨パッド。
(4)前記中間層が、前記上面層および前記底面層と比較してより低いビカット軟化点を有するポリマー樹脂を含む、(1)〜(3)のいずれか1項記載の研磨パッド。
(5)前記中間層が、熱可塑性ポリウレタンを含む、(4)記載の研磨パッド。
(6)前記中間層の前記熱可塑性ポリウレタンが、前記上面層または前記底面層より低いビカット軟化点を有する、(5)記載の研磨パッド。
(7)前記中間層が、約260°F〜約300°Fの範囲のビカット軟化点を有する、(6)記載の研磨パッド。
(8)前記上面層が、熱可塑性ポリウレタン、ポリカーボネート、ナイロン、ポリオレフィン、ポリビニルアルコール、ポリアクリレート、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリアクリレート、ポリスチレン、ポリメチルメタクリレート、それらの共重合体、およびそれらの混合物からなる群から選択されるポリマー樹脂を含む、(1)〜(7)のいずれか1項記載の研磨パッド。
(9)前記ポリマー樹脂が、熱可塑性ポリウレタンである、(8)記載の研磨パッド。
(10)前記中間層の厚さが、約3ミル〜約5ミルである、(1)〜(9)のいずれか1項記載の研磨パッド。
(11)前記上面層および前記底面層が多孔質である、(1)〜(10)のいずれか1項記載の方法。
(12)下記の工程、
(i)上面層、中間層および底面層を含む多層のポリマーシートを互いに接合させる工程、該中間層は、該上面層および該底面層と比較してより低いビカット軟化点を有するポリマー樹脂をふくむ、
(ii)該多層のポリマーシートを、該中間層のビカット軟化点よりは高いが、しかしながら該上面層および該底面層のビカット軟化点よりは低い温度にさせる工程、ならびに、
(iii)該中間層および該上面層の間、ならびに該中間層および該底面層の間に結合を形成させる工程、
を含んでなる多層研磨パッドの製造方法。
(13)前記多層のポリマーシートが、約260°F〜約300°Fの範囲の温度に付される、(12)記載の方法。
(14)前記多層のポリマーシートを約260°F〜約300°Fの範囲の温度に付される工程が、ラミネーションによって行われる、(12)または(13)記載の方法。
(15)前記上面層が、研磨表面を含む、(12)〜(14)のいずれか1項記載の方法。
(16)前記底面層が、ポリカーボネート材料を含む、(12)〜(15)のいずれか1項記載の方法。
(17)前記中間層が、熱可塑性ポリウレタンを含む、(12)〜(16)のいずれか1項記載の方法。
(18)前記中間層が、約260°F〜約300°Fの範囲のビカット軟化点を有する、(12)〜(17)のいずれか1項記載の方法。
(19)前記上面層が、熱可塑性ポリウレタン、ポリカーボネート、ナイロン、ポリオレフィン、ポリビニルアルコール、ポリアクリレート、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリアクリレート、ポリスチレン、ポリメチルメタクリレート、それらの共重合体、およびそれらの混合物からなる群から選択されるポリマー樹脂を含む、(12)〜(18)のいずれか1項記載の方法。
(20)前記ポリマー樹脂が、熱可塑性ポリウレタンである、(19)記載の方法。
(21)前記中間層の厚さが、約3ミル〜約5ミルである、(12)〜(20)のいずれか1項記載の方法。
(22)前記上面層および前記底面層が多孔質である、(12)〜(21)のいずれか1項記載の方法。
(23)回転するプラテン、
該回転するプラテンに固定された、(1)〜(11)のいずれか1項記載の研磨パッド、および、
回転する該研磨パッドと接触することによって研磨される加工品を保持する支持体、
を含んでなる化学機械研磨装置。
(24)インサイチュの終点検知システムを更に含む、(23)記載の化学機械研磨装置。
(25)加工品の研磨方法であって、
(i)(1)〜(11)のいずれか1項記載の研磨パッドを準備する工程、
(ii)該加工品を該研磨パッドと接触させる工程、および、
(iii)該研磨パッドを該加工品に対して動かして、該加工品を削り取り、それによって該加工品を研磨する工程、
を含んでなる研磨方法。
Claims (22)
- 上面層、中間層および底面層を含む化学機械研磨用の多層の研磨パッドであって、該上面層および該底面層が、該中間層によって互いに結合されており、かつ前記各層が接着剤の使用なしに結合されており、
前記中間層が、前記上面層および前記底面層と比較してより低いビカット軟化点を有するポリマー樹脂を含み、そして、
前記中間層が、260°F〜300°Fの範囲のビカット軟化点を有する、
研磨パッド。 - 前記上面層が、研磨表面を含む、請求項1記載の研磨パッド。
- 前記底面層が、ポリカーボネート材料を含む、請求項1または2記載の研磨パッド。
- 前記中間層が、熱可塑性ポリウレタンを含む、請求項1〜3のいずれか1項記載の研磨パッド。
- 前記中間層の前記熱可塑性ポリウレタンが、前記上面層または前記底面層より低いビカット軟化点を有する、請求項4記載の研磨パッド。
- 前記上面層が、熱可塑性ポリウレタン、ポリカーボネート、ナイロン、ポリオレフィン、ポリビニルアルコール、ポリアクリレート、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリアクリレート、ポリスチレン、ポリメチルメタクリレート、それらの共重合体、およびそれらの混合物からなる群から選択されるポリマー樹脂を含む、請求項1〜5のいずれか1項記載の研磨パッド。
- 前記ポリマー樹脂が、熱可塑性ポリウレタンである、請求項6記載の研磨パッド。
- 前記中間層の厚さが、3ミル〜5ミルである、請求項1〜7のいずれか1項記載の研磨パッド。
- 前記上面層および前記底面層が多孔質である、請求項1〜8のいずれか1項記載の研磨パッド。
- 下記の工程、
(i)上面層、中間層および底面層を含む多層のポリマーシートを互いに接合させる工程、該中間層は、該上面層および該底面層と比較してより低いビカット軟化点を有するポリマー樹脂をふくむ、
(ii)該多層のポリマーシートを、該中間層のビカット軟化点よりは高いが、しかしながら該上面層および該底面層のビカット軟化点よりは低い温度にさせる工程、ならびに、
(iii)該中間層および該上面層の間、ならびに該中間層および該底面層の間に結合を形成させる工程、
を含んでなる多層研磨パッドの製造方法であって、
前記多層のポリマーシートが、260°F〜300°Fの範囲の温度に付される、
方法。 - 前記多層のポリマーシートを260°F〜300°Fの範囲の温度に付される工程が、ラミネーションによって行われる、請求項10記載の方法。
- 前記上面層が、研磨表面を含む、請求項10または11記載の方法。
- 前記底面層が、ポリカーボネート材料を含む、請求項10〜12のいずれか1項記載の方法。
- 前記中間層が、熱可塑性ポリウレタンを含む、請求項10〜13のいずれか1項記載の方法。
- 前記中間層が、260°F〜300°Fの範囲のビカット軟化点を有する、請求項10〜14のいずれか1項記載の方法。
- 前記上面層が、熱可塑性ポリウレタン、ポリカーボネート、ナイロン、ポリオレフィン、ポリビニルアルコール、ポリアクリレート、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリアクリレート、ポリスチレン、ポリメチルメタクリレート、それらの共重合体、およびそれらの混合物からなる群から選択されるポリマー樹脂を含む、請求項10〜15のいずれか1項記載の方法。
- 前記ポリマー樹脂が、熱可塑性ポリウレタンである、請求項16記載の方法。
- 前記中間層の厚さが、3ミル〜5ミルである、請求項10〜17のいずれか1項記載の方法。
- 前記上面層および前記底面層が多孔質である、請求項10〜18のいずれか1項記載の方法。
- 回転するプラテン、
該回転するプラテンに固定された、請求項1〜9のいずれか1項記載の研磨パッド、および、
回転する該研磨パッドと接触することによって研磨される加工品を保持する支持体、
を含んでなる化学機械研磨装置。 - インサイチュの終点検知システムを更に含む、請求項20記載の化学機械研磨装置。
- 加工品の研磨方法であって、
(i)請求項1〜9のいずれか1項記載の研磨パッドを準備する工程、
(ii)該加工品を該研磨パッドと接触させる工程、および、
(iii)該研磨パッドを該加工品に対して動かして、該加工品を削り取り、それによって該加工品を研磨する工程、
を含んでなる研磨方法。
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US201461989669P | 2014-05-07 | 2014-05-07 | |
US61/989,669 | 2014-05-07 | ||
US201462022770P | 2014-07-10 | 2014-07-10 | |
US62/022,770 | 2014-07-10 | ||
PCT/US2015/028503 WO2015171419A1 (en) | 2014-05-07 | 2015-04-30 | Multi-layer polishing pad for cmp |
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EP (1) | EP3140852B1 (ja) |
JP (1) | JP6574244B2 (ja) |
KR (1) | KR102440303B1 (ja) |
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CN112238670B (zh) * | 2020-10-16 | 2022-11-15 | 上海江丰平芯电子科技有限公司 | 一种研磨垫的制备方法 |
EP4267342A1 (en) * | 2020-12-22 | 2023-11-01 | CMC Materials, Inc. | Chemical-mechanical polishing subpad having porogens with polymeric shells |
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