JP5221340B2 - Cmp用の多層研磨パッド材料 - Google Patents
Cmp用の多層研磨パッド材料 Download PDFInfo
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- JP5221340B2 JP5221340B2 JP2008508918A JP2008508918A JP5221340B2 JP 5221340 B2 JP5221340 B2 JP 5221340B2 JP 2008508918 A JP2008508918 A JP 2008508918A JP 2008508918 A JP2008508918 A JP 2008508918A JP 5221340 B2 JP5221340 B2 JP 5221340B2
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Description
この実施例は、接着剤の使用なしで非多孔質層に結合される多孔質層を含む本発明の多層研磨パッドを製造する方法を説明する。
この実施例は、該研磨層が底層のそれよりも大きな平均表面粗さを有する、接着剤の使用なしで多孔質底層に結合される多孔質研磨層を含む、本発明の多層研磨パッドを製造する方法を説明する。
Claims (19)
- 多孔質の研磨層と多孔質の底層とを含む化学機械研磨用の多層研磨パッドであって、該底層が該研磨層とほぼ同一の広がりを有し、該研磨層と該底層の界面が接着剤なしであるように該研磨層が該底層と直接相互連結され、該研磨層が該底層の平均表面粗さRaよりも大きな平均表面粗さRaを有し、走査型電子顕微鏡法による測定で、前記研磨層が10 4 セル/cm 3 を超える孔セル密度を有し、前記底層が10 4 セル/cm 3 未満の孔セル密度を有する、多層研磨パッド。
- 前記研磨層及び前記底層が、それぞれ15〜50μmの範囲にある平均セル径を有する複数の孔セルを含む、請求項1に記載の多層研磨パッド。
- 前記研磨層のRaが25μmを超える、請求項1に記載の多層研磨パッド。
- 前記底層のRaが20μm未満である、請求項1に記載の多層研磨パッド。
- 前記研磨層のRaが25μmを超え、かつ前記底層のRaが20μm未満である、請求項1に記載の多層研磨パッド。
- 前記研磨層が第1のポリマー樹脂を含み、前記底層が第2のポリマー樹脂を含む、請求項1に記載の多層研磨パッド。
- 前記研磨層が熱可塑性ポリウレタンを含み、前記底層がポリカーボネート、ナイロン、ポリオレフィン、ポリビニルアルコール、ポリアクリレート、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、これらの任意のコポリマー、及びこれらの混合物からなる群より選択されるポリマー樹脂を含む、請求項6に記載の多層研磨パッド。
- 前記底層及び前記研磨層が、それぞれ熱可塑性エラストマー、熱硬化性ポリマー、ポリウレタン、ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、エラストマー系ゴム、エラストマー系ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリアクリレート、ポリスチレン、ポリメチルメタクリレート、これらの任意のコポリマー、及びこれらの混合物からなる群より選択されるポリマー樹脂を含む、請求項1に記載の多層研磨パッド。
- 前記ポリマー樹脂が熱可塑性ポリウレタンである、請求項8に記載の多層研磨パッド。
- 前記研磨層と前記底層の間に配置される1つ又は複数の中間層をさらに含み、該1つ又は複数の中間層が該研磨層及び該底層とほぼ同一の広がりを有し、該研磨層、該1つ又は複数の中間層及び該底層の各接触面が機械的に連結される、請求項1に記載の多層研磨パッド。
- 前記研磨層と前記底層の間に配置される1つ又は複数の中間層をさらに含み、該1つ又は複数の中間層が該研磨層及び該底層とほぼ同一の広がりを有し、該研磨層、該1つ又は複数の中間層及び該底層の各接触面が互いに融合される、請求項1に記載の多層研磨パッド。
- 多孔質の研磨層と多孔質の底層とを含む化学機械研磨用の多層研磨パッドであって、これらの層間の界面が接着剤なしであるように該底層が該研磨層とほぼ同一の広がりを有し、該研磨層及び該底層が、それぞれ15〜50μmの範囲にある平均孔径を有する複数の孔セルを含み、走査型電子顕微鏡法による測定で、該研磨層が104セル/cm3を超える孔セル密度を有し、該底層が104セル/cm3未満の孔セル密度を有する、多層研磨パッド。
- 前記研磨層及び前記底層がそれぞれ同じポリマー樹脂を含む、請求項12に記載の多層研磨パッド。
- 前記ポリマー樹脂が熱可塑性ポリウレタンである、請求項13に記載の多層研磨パッド。
- 前記研磨層と前記底層の間に配置される1つ又は複数の中間層をさらに含み、該1つ又は複数の中間層が該研磨層及び該底層とほぼ同一の広がりを有し、該研磨層、該1つ又は複数の中間層及び該底層が互いに融合される、請求項12に記載の多層研磨パッド。
- (a)回転するプラテン、
(b)該回転するプラテンに取り付けられる請求項1に記載の多層研磨パッド、及び
(c)回転する多層研磨パッドと接触することにより研磨すべき加工物を保持するキャリヤー
を備えた、化学機械研磨装置。 - 加工物を請求項1に記載の多層研磨パッドの研磨表面と接触させる工程、及び
該加工物に対し該研磨パッドを動かして該加工物を削り、それによって該加工物を研磨する工程
を含む、加工物を研磨する方法。 - 多孔質の研磨層と多孔質の底層の少なくとも一方が部分的に融解している間に該研磨層の表面を該底層の表面に押し付け、それによって該研磨層を該底層に固定する工程を含み、該研磨層が該底層の平均表面粗さRaよりも大きな平均表面粗さRaを有する、請求項1に記載の研磨パッドを製造する方法。
- 前記研磨層と前記底層の少なくとも一方が押出成形された高分子発泡体である、請求項18に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/113,498 US7435161B2 (en) | 2003-06-17 | 2005-04-25 | Multi-layer polishing pad material for CMP |
US11/113,498 | 2005-04-25 | ||
PCT/US2006/014674 WO2006115924A1 (en) | 2005-04-25 | 2006-04-19 | Multi-layer polishing pad material for cmp |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008539093A JP2008539093A (ja) | 2008-11-13 |
JP5221340B2 true JP5221340B2 (ja) | 2013-06-26 |
Family
ID=36928793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008508918A Active JP5221340B2 (ja) | 2005-04-25 | 2006-04-19 | Cmp用の多層研磨パッド材料 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7435161B2 (ja) |
EP (1) | EP1879720B1 (ja) |
JP (1) | JP5221340B2 (ja) |
KR (1) | KR101281982B1 (ja) |
CN (1) | CN101184582B (ja) |
IL (1) | IL186687A (ja) |
MY (1) | MY143522A (ja) |
TW (1) | TWI311512B (ja) |
WO (1) | WO2006115924A1 (ja) |
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-
2005
- 2005-04-25 US US11/113,498 patent/US7435161B2/en not_active Expired - Lifetime
-
2006
- 2006-04-19 EP EP06750664.2A patent/EP1879720B1/en active Active
- 2006-04-19 JP JP2008508918A patent/JP5221340B2/ja active Active
- 2006-04-19 KR KR1020077027305A patent/KR101281982B1/ko active IP Right Grant
- 2006-04-19 WO PCT/US2006/014674 patent/WO2006115924A1/en active Application Filing
- 2006-04-19 CN CN2006800185656A patent/CN101184582B/zh active Active
- 2006-04-21 TW TW095114367A patent/TWI311512B/zh active
- 2006-04-24 MY MYPI20061875A patent/MY143522A/en unknown
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TWI311512B (en) | 2009-07-01 |
MY143522A (en) | 2011-05-31 |
EP1879720B1 (en) | 2016-10-05 |
CN101184582A (zh) | 2008-05-21 |
TW200709894A (en) | 2007-03-16 |
KR101281982B1 (ko) | 2013-07-03 |
IL186687A0 (en) | 2008-02-09 |
US7435161B2 (en) | 2008-10-14 |
JP2008539093A (ja) | 2008-11-13 |
IL186687A (en) | 2012-04-30 |
WO2006115924A1 (en) | 2006-11-02 |
US20050197050A1 (en) | 2005-09-08 |
CN101184582B (zh) | 2010-05-19 |
EP1879720A1 (en) | 2008-01-23 |
KR20080005573A (ko) | 2008-01-14 |
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