JP2007531275A - 低表面エネルギーcmpパッド - Google Patents
低表面エネルギーcmpパッド Download PDFInfo
- Publication number
- JP2007531275A JP2007531275A JP2007505002A JP2007505002A JP2007531275A JP 2007531275 A JP2007531275 A JP 2007531275A JP 2007505002 A JP2007505002 A JP 2007505002A JP 2007505002 A JP2007505002 A JP 2007505002A JP 2007531275 A JP2007531275 A JP 2007531275A
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- pad substrate
- polishing
- polymer
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 239000002184 metal Substances 0.000 claims description 13
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 5
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- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 3
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- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 3
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- 239000004065 semiconductor Substances 0.000 description 9
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
Claims (50)
- 少なくとも1つの親水性繰り返し単位と少なくとも1つの疎水性繰り返し単位とを有するコポリマーを含む、研磨パッド基材。
- 前記研磨パッドの表面エネルギーが34mN/m以下である、請求項1に記載の研磨パッド基材。
- 前記親水性繰り返し単位が、エステル、エーテル、アクリル酸、アクリルアミド、アミド、イミド、ビニルアルコール、ビニルアセテート、アクリレート、メタクリレート、スルホン、ウレタン、塩化ビニル、エーテルエーテルケトン、カーボネート及びオリゴマー類、並びにこれらの組み合わせからなる群から選択される、請求項1に記載の研磨パッド基材。
- 前記親水性繰り返し単位がウレタンである、請求項1に記載の研磨パッド基材。
- 前記疎水性繰り返し単位が、フルオロカーボン、テトラフルオロエチレン、フッ化ビニル、シロキサン、ジメチルシロキサン、ブタジエン、エチレン、オレフィン、スチレン、プロピレン及びオリゴマー類、並びにこれらの組み合わせからなる群から選択される、請求項1に記載の研磨パッド基材。
- 前記疎水性繰り返し単位がフルオロカーボン又はシロキサンである、請求項1に記載の研磨パッド基材。
- 前記研磨パッド基材が、中実の、非孔性研磨パッド基材である、請求項1に記載の研磨パッド基材。
- 前記研磨パッド基材の密度が、前記コポリマーの最大理論密度の90%以上である、請求項1に記載の研磨パッド基材。
- 前記研磨パッド基材が多孔性研磨パッド基材である、請求項1に記載の研磨パッド基材。
- 前記研磨パッド基材の密度が、前記コポリマーの最大理論密度の70%以下である、請求項9に記載の研磨パッド基材。
- 前記研磨パッド基材の気孔率が75%以下である、請求項9に記載の研磨パッド基材。
- 前記研磨パッド基材が研磨層である、請求項1に記載の研磨パッド基材。
- 前記研磨層がさらに溝を含む、請求項12に記載の研磨パッド基材。
- 前記研磨パッド基材がサブパッドである、請求項1に記載の研磨パッド基材。
- 前記研磨パッド基材がさらに光透過領域を含む、請求項1に記載の研磨パッド基材。
- 前記光透過領域の光透過率が、190nm〜3500nmの間の1つ以上の波長において、少なくとも10%である、請求項15に記載の研磨パッド基材。
- 前記光透過領域が前記コポリマーを含む、請求項15に記載の研磨パッド基材。
- 前記研磨パッド基材がさらに研磨粒子を含む、請求項1に記載の研磨パッド基材。
- 前記研磨粒子が、アルミナ、シリカ、チタニア、セリア、ジルコニア、ゲルマニア、マグネシア及びこれらが共形成した生成物、並びにこれらの組み合わせからなる群から選択される金属酸化物を含む、請求項18に記載の研磨パッド基材。
- (i)研磨される加工物を用意し、
(ii)該加工物を請求項1に記載の前記研磨パッド基材を含む研磨システムと接触させ、さらに
(iii)該研磨システムにより該加工物の表面の少なくとも一部を薄く削って、該加工物を研磨する
ことを含む、加工物の研磨方法。 - 該加工物が、単結晶シリコン、多結晶シリコン、アモルファスシリコン、タングステンシリサイド、チタンシリサイド、有機ポリマー、タングステン、銅、チタン、金属酸化物、金属窒化物及びこれらの組み合わせからなる群から選択される材料を含む表面層を含んでなる、請求項20に記載の方法。
- 前記研磨システムが、さらに研磨組成物を含む化学機械研磨システムである、請求項20に記載の方法。
- 前記方法が、さらにin−situで研磨最終点を検出することを含む、請求項20に記載の方法。
- ポリマー鎖に結合した、少なくとも1つの親水性単位と少なくとも1つの疎水性単位とを有する該ポリマーを含む研磨パッド基材。
- 前記ポリマーが熱可塑性ポリマー又は熱硬化性ポリマーである、請求項24に記載の研磨パッド基材。
- 前記熱可塑性ポリマー又は前記熱硬化性ポリマーが、ポリウレタン、ポリオレフィン、ポリビニルアルコール、ポリビニルアセテート、ポリカーボネート、ポリアクリル酸、ポリアクリルアミド、ポリエチレン、ポリプロピレン、ナイロン、フルオロカーボン、ポリエステル、ポリエーテル、ポリアミド、ポリイミド、ポリテトラフルオロエチレン、ポリエーテルエーテルケトン及びこれらのコポリマー類、並びにこれらの混合物からなる群から選択される、請求項25に記載の研磨パッド基材。
- 前記熱可塑性ポリマー又は前記熱硬化性ポリマーが、ポリウレタン及びポリオレフィンからなる群から選択される、請求項26に記載の研磨パッド基材。
- 前記研磨パッドの表面エネルギーが34mN/m以下である、請求項24に記載の研磨パッド基材。
- 前記親水性単位が、エステル、エーテル、アクリル酸、アクリルアミド、アミド、イミド、ビニルアルコール、ビニルアセテート、アクリレート、メタクリレート、スルホン、ウレタン、塩化ビニル、エーテルエーテルケトン、カーボネート及びオリゴマー類、並びにこれらの組み合わせからなる群から選択される、請求項24に記載の研磨パッド基材。
- 前記親水性単位がウレタンである、請求項24に記載の研磨パッド基材。
- 前記疎水性単位が、フルオロカーボン、テトラフルオロエチレン、フッ化ビニル、シロキサン、ジメチルシロキサン、ブタジエン、エチレン、オレフィン、スチレン、プロピレン及びオリゴマー類、並びにこれらの組み合わせからなる群から選択される、請求項24に記載の研磨パッド基材。
- 前記疎水性単位がフルオロカーボン又はシロキサンである、請求項24に記載の研磨パッド基材。
- 前記少なくとも1つの親水性単位と前記少なくとも1つの疎水性単位とが、前記ポリマー鎖の末端の繰り返し単位に結合している、請求項24に記載の研磨パッド基材。
- 前記研磨パッド基材が、中実の、非孔性研磨パッド基材である、請求項24に記載の研磨パッド基材。
- 前記研磨パッド基材の密度が、前記コポリマーの最大理論密度の90%以上である、請求項24に記載の研磨パッド基材。
- 前記研磨パッド基材が多孔性研磨パッド基材である、請求項24に記載の研磨パッド基材。
- 前記研磨パッド基材の密度が、前記ポリマーの最大理論密度の70%以下である、請求項36に記載の研磨パッド基材。
- 前記研磨パッド基材の気孔率が75%以下である、請求項36に記載の研磨パッド基材。
- 前記研磨パッド基材が研磨層である、請求項24に記載の研磨パッド基材。
- 前記研磨層がさらに溝を含む、請求項39に記載の研磨パッド基材。
- 前記研磨パッド基材がサブパッドである、請求項24に記載の研磨パッド基材。
- 前記研磨パッド基材がさらに光透過領域を含む、請求項24に記載の研磨パッド基材。
- 前記光透過領域の光透過率が、190nm〜3500nmの間の1つ以上の波長において、少なくとも10%である、請求項42に記載の研磨パッド基材。
- 前記光透過領域が、前記ポリマー鎖に結合した、少なくとも1つの親水性単位と少なくとも1つの疎水性単位とを有する前記ポリマーを含む、請求項42に記載の研磨パッド基材。
- 前記研磨パッド基材がさらに研磨粒子を含む、請求項24に記載の研磨パッド基材。
- 前記研磨粒子が、アルミナ、シリカ、チタニア、セリア、ジルコニア、ゲルマニア、マグネシア及びこれらが共形成した生成物、並びにこれらの組み合わせからなる群から選択される金属酸化物を含む、請求項45に記載の研磨パッド基材。
- (i)研磨される加工物を用意し、
(ii)該加工物を請求項24に記載の前記研磨パッド基材を含む研磨システムと接触させ、さらに
(iii)該研磨システムにより該加工物の表面の少なくとも一部を薄く削って、該加工物を研磨する
ことを含む、基材の研磨方法。 - 該加工物が、単結晶シリコン、多結晶シリコン、アモルファスシリコン、タングステンシリサイド、チタンシリサイド、有機ポリマー、タングステン、銅、チタン、金属酸化物、金属窒化物及びこれらの組み合わせからなる群から選択される材料を含む表面層を含んでなる、請求項47に記載の方法。
- 前記研磨システムが、さらに研磨組成物を含む化学機械研磨システムである、請求項47に記載の方法。
- 前記方法が、さらにin−situで研磨最終点を検出することを含む、請求項47に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/807,079 | 2004-03-23 | ||
US10/807,079 US7059936B2 (en) | 2004-03-23 | 2004-03-23 | Low surface energy CMP pad |
PCT/US2005/008412 WO2005099963A1 (en) | 2004-03-23 | 2005-03-14 | Low surface energy cmp pad |
Publications (3)
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JP2007531275A true JP2007531275A (ja) | 2007-11-01 |
JP2007531275A5 JP2007531275A5 (ja) | 2008-03-27 |
JP4955535B2 JP4955535B2 (ja) | 2012-06-20 |
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JP2007505002A Expired - Fee Related JP4955535B2 (ja) | 2004-03-23 | 2005-03-14 | 低表面エネルギーcmpパッド |
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Country | Link |
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US (1) | US7059936B2 (ja) |
JP (1) | JP4955535B2 (ja) |
KR (1) | KR100986935B1 (ja) |
CN (1) | CN100562402C (ja) |
MY (1) | MY136726A (ja) |
TW (1) | TWI276507B (ja) |
WO (1) | WO2005099963A1 (ja) |
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JP2007276061A (ja) * | 2006-04-07 | 2007-10-25 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP2012528487A (ja) * | 2009-05-27 | 2012-11-12 | ロジャーズ コーポレーション | 研磨パッド、それを用いた組成物および、その製造と使用方法 |
US9056382B2 (en) | 2009-05-27 | 2015-06-16 | Rogers Corporation | Polishing pad, composition for the manufacture thereof, and method of making and using |
JP2015130521A (ja) * | 2009-05-27 | 2015-07-16 | ロジャーズ コーポレーション | 研磨パッド、研磨パッドのためのポリウレタン層およびシリコンウエハを研磨する方法 |
JP2017064888A (ja) * | 2015-10-02 | 2017-04-06 | 富士紡ホールディングス株式会社 | 研磨パッド |
Also Published As
Publication number | Publication date |
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TW200539986A (en) | 2005-12-16 |
KR20060127220A (ko) | 2006-12-11 |
US20050215179A1 (en) | 2005-09-29 |
JP4955535B2 (ja) | 2012-06-20 |
US7059936B2 (en) | 2006-06-13 |
CN100562402C (zh) | 2009-11-25 |
KR100986935B1 (ko) | 2010-10-08 |
MY136726A (en) | 2008-11-28 |
CN1933938A (zh) | 2007-03-21 |
TWI276507B (en) | 2007-03-21 |
WO2005099963A1 (en) | 2005-10-27 |
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