JP4991294B2 - 引っ込んだ窓を有する研磨パッド - Google Patents
引っ込んだ窓を有する研磨パッド Download PDFInfo
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- JP4991294B2 JP4991294B2 JP2006526983A JP2006526983A JP4991294B2 JP 4991294 B2 JP4991294 B2 JP 4991294B2 JP 2006526983 A JP2006526983 A JP 2006526983A JP 2006526983 A JP2006526983 A JP 2006526983A JP 4991294 B2 JP4991294 B2 JP 4991294B2
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
Claims (21)
- (a)研磨表面と第1長さおよび第1幅を有する第1開口部とを含む第1研磨層、
(b)本体と第2長さおよび第2幅を有する第2開口部とを含む第2層であって、該第2層は第1研磨層と実質的に同一の広がりを有し、第1長さおよび第1幅の少なくとも一方はそれぞれ第2長さおよび第2幅よりも小さい、第2層、および
(c)実質的に透明な窓部分であって、第1研磨層の第1開口部と整合するように第1研磨層に取り付けて第2層の第2開口部内に配置され、且つ第2層の本体から幅が0.1mm〜1mmの隙間により分離される、厚さ0.1cm〜0.4cmの実質的に透明な窓部分、
を含む化学機械研磨用の研磨パッド。 - 前記透明な窓部分が第1研磨層に接着される、請求項1に記載の研磨パッド。
- 前記透明な窓部分が第1研磨層に溶接される、請求項1に記載の研磨パッド。
- 第1長さおよび第1幅の両方がそれぞれ第2長さおよび第2幅よりも小さい、請求項1に記載の研磨パッド。
- 前記隙間に圧縮性材料が充填される、請求項1に記載の研磨パッド。
- 第1開口部の周囲境界面が角度をつけられる、請求項1に記載の研磨パッド。
- 第1開口部の周囲境界面が丸められる、請求項1に記載の研磨パッド。
- 前記透明な窓部分がさらに第1研磨層の第1開口部内に配置される、請求項1に記載の研磨パッド。
- 第1研磨層の研磨表面が1以上の溝をさらに含む、請求項1に記載の研磨パッド。
- 前記溝が前記開口部の両側で整合される、請求項9に記載の研磨パッド。
- 前記透明な窓部分の厚さが第2層の厚さよりも小さい、請求項1に記載の研磨パッド。
- 第1研磨層がポリウレタンを含む、請求項1に記載の研磨パッド。
- 前記透明な窓部分が熱可塑性ポリウレタンを含む、請求項1に記載の研磨パッド。
- 前記透明な窓部分が200nm〜10,000nmの少なくとも一つの波長で1%以上の光透過率を有する、請求項13に記載の研磨パッド。
- 前記透明な窓部分が、ポリマー粒子、無機粒子、およびそれらの組合せから選択される粒子をさらに含む、請求項13に記載の研磨パッド。
- 前記透明な窓部分が気孔を含有する、請求項1に記載の研磨パッド。
- (a)回転する定盤、
(b)請求項1に記載の研磨パッド、および
(c)回転する研磨パッドと接触することにより研磨しようとする加工物を保持するキャリア、
を含む化学機械研磨装置。 - その場で研磨終点を検出するシステムをさらに含む、請求項17に記載の化学機械研磨装置。
- (i)請求項1に記載の研磨パッドを提供すること、
(ii)加工物を該研磨パッドに接触させること、および
(iii)該加工物に対し研磨パッドを動かして加工物をすり減らし、それにより該加工物を研磨すること、
を含む加工物研磨方法。 - 前記研磨パッドを加工物に対し動かして加工物をすり減らし、それにより加工物を研磨しながら、加工物の研磨の進捗をその場で研磨終点を検出するシステムで監視することをさらに含む、請求項19に記載の方法。
- 前記その場で研磨終点を検出するシステムを用いて加工物の研磨の終点を決定することをさらに含む、請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/666,797 | 2003-09-19 | ||
US10/666,797 US7195539B2 (en) | 2003-09-19 | 2003-09-19 | Polishing pad with recessed window |
PCT/US2004/030105 WO2005032765A1 (en) | 2003-09-19 | 2004-09-14 | Polishing pad with recessed window |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007506280A JP2007506280A (ja) | 2007-03-15 |
JP4991294B2 true JP4991294B2 (ja) | 2012-08-01 |
Family
ID=34313201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006526983A Active JP4991294B2 (ja) | 2003-09-19 | 2004-09-14 | 引っ込んだ窓を有する研磨パッド |
Country Status (9)
Country | Link |
---|---|
US (1) | US7195539B2 (ja) |
EP (1) | EP1667816B1 (ja) |
JP (1) | JP4991294B2 (ja) |
KR (1) | KR100936594B1 (ja) |
CN (1) | CN1852788A (ja) |
AT (1) | ATE464976T1 (ja) |
DE (1) | DE602004026748D1 (ja) |
TW (1) | TWI276504B (ja) |
WO (1) | WO2005032765A1 (ja) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8485862B2 (en) * | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
US7001242B2 (en) | 2002-02-06 | 2006-02-21 | Applied Materials, Inc. | Method and apparatus of eddy current monitoring for chemical mechanical polishing |
US20040209066A1 (en) * | 2003-04-17 | 2004-10-21 | Swisher Robert G. | Polishing pad with window for planarization |
US7258602B2 (en) * | 2003-10-22 | 2007-08-21 | Iv Technologies Co., Ltd. | Polishing pad having grooved window therein and method of forming the same |
US6984163B2 (en) * | 2003-11-25 | 2006-01-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with high optical transmission window |
US7182670B2 (en) * | 2004-09-22 | 2007-02-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having a streamlined windowpane |
US20060089093A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
US20060089094A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
US20060089095A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
JP2007118106A (ja) * | 2005-10-26 | 2007-05-17 | Toyo Tire & Rubber Co Ltd | 研磨パッド及びその製造方法 |
JP4859109B2 (ja) * | 2006-03-27 | 2012-01-25 | 東洋ゴム工業株式会社 | 研磨パッドの製造方法 |
JP2007307639A (ja) * | 2006-05-17 | 2007-11-29 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
JP5110677B2 (ja) * | 2006-05-17 | 2012-12-26 | 東洋ゴム工業株式会社 | 研磨パッド |
WO2008154185A2 (en) * | 2007-06-08 | 2008-12-18 | Applied Materials, Inc. | Thin polishing pad with window and molding process |
TWI411495B (zh) * | 2007-08-16 | 2013-10-11 | Cabot Microelectronics Corp | 拋光墊 |
US7985121B2 (en) * | 2007-11-30 | 2011-07-26 | Innopad, Inc. | Chemical-mechanical planarization pad having end point detection window |
US8157614B2 (en) * | 2009-04-30 | 2012-04-17 | Applied Materials, Inc. | Method of making and apparatus having windowless polishing pad and protected fiber |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
JP5501785B2 (ja) * | 2010-02-05 | 2014-05-28 | 株式会社ディスコ | サファイア基板の加工方法 |
JP5443192B2 (ja) * | 2010-02-10 | 2014-03-19 | 株式会社ディスコ | サファイア基板の加工方法 |
JP5426469B2 (ja) * | 2010-05-10 | 2014-02-26 | 東洋ゴム工業株式会社 | 研磨パッドおよびガラス基板の製造方法 |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
US8758659B2 (en) | 2010-09-29 | 2014-06-24 | Fns Tech Co., Ltd. | Method of grooving a chemical-mechanical planarization pad |
US8628384B2 (en) * | 2010-09-30 | 2014-01-14 | Nexplanar Corporation | Polishing pad for eddy current end-point detection |
SG188632A1 (en) * | 2010-09-30 | 2013-04-30 | Nexplanar Corp | Polishing pad for eddy current end-point detection |
US8657653B2 (en) | 2010-09-30 | 2014-02-25 | Nexplanar Corporation | Homogeneous polishing pad for eddy current end-point detection |
CN103222034B (zh) * | 2010-11-18 | 2016-03-09 | 嘉柏微电子材料股份公司 | 包含透射区域的抛光垫 |
US8920219B2 (en) * | 2011-07-15 | 2014-12-30 | Nexplanar Corporation | Polishing pad with alignment aperture |
US9156125B2 (en) | 2012-04-11 | 2015-10-13 | Cabot Microelectronics Corporation | Polishing pad with light-stable light-transmitting region |
US9597769B2 (en) * | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
US20140256231A1 (en) * | 2013-03-07 | 2014-09-11 | Dow Global Technologies Llc | Multilayer Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window |
JP6255991B2 (ja) * | 2013-12-26 | 2018-01-10 | 株式会社Sumco | ワークの両面研磨装置 |
US9064806B1 (en) | 2014-03-28 | 2015-06-23 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad with window |
US9259820B2 (en) | 2014-03-28 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with polishing layer and window |
US9216489B2 (en) | 2014-03-28 | 2015-12-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
US9333620B2 (en) | 2014-04-29 | 2016-05-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with clear endpoint detection window |
US9314897B2 (en) | 2014-04-29 | 2016-04-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
KR101555822B1 (ko) * | 2014-09-05 | 2015-09-25 | 임흥빈 | 절개형 핸드 그라인더 휠 |
US9475168B2 (en) * | 2015-03-26 | 2016-10-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad window |
CN104889874B (zh) * | 2015-06-25 | 2017-08-04 | 蓝思科技(长沙)有限公司 | 一种蓝宝石抛光用吸附垫及其制备方法 |
US10213894B2 (en) | 2016-02-26 | 2019-02-26 | Applied Materials, Inc. | Method of placing window in thin polishing pad |
US10569383B2 (en) * | 2017-09-15 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Flanged optical endpoint detection windows and CMP polishing pads containing them |
CN109202693B (zh) * | 2017-10-16 | 2021-10-12 | Skc索密思株式会社 | 防泄漏抛光垫及其制造方法 |
US11002034B2 (en) | 2019-05-31 | 2021-05-11 | Fred Joseph Horrell, III | Utility pole crossarm conversion apparatuses |
CN113246015B (zh) * | 2021-05-25 | 2022-09-20 | 万华化学集团电子材料有限公司 | 具有终点检测窗的抛光垫及其应用 |
CN114918823B (zh) * | 2022-05-20 | 2023-08-25 | 安徽禾臣新材料有限公司 | 一种大尺寸衬底抛光用白垫及其生产工艺 |
CN115415931B (zh) * | 2022-07-26 | 2024-03-15 | 安徽禾臣新材料有限公司 | 一种半导体加工用化学机械抛光垫 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
JP3454658B2 (ja) | 1997-02-03 | 2003-10-06 | 大日本スクリーン製造株式会社 | 研磨処理モニター装置 |
JPH1177517A (ja) | 1997-09-02 | 1999-03-23 | Nikon Corp | 研磨部材及び研磨装置 |
US6068539A (en) | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
US6248000B1 (en) | 1998-03-24 | 2001-06-19 | Nikon Research Corporation Of America | Polishing pad thinning to optically access a semiconductor wafer surface |
WO2000060650A1 (fr) | 1999-03-31 | 2000-10-12 | Nikon Corporation | Corps de polissage, dispositif de polissage, procede de reglage du dispositif de polissage, dispositif de mesure de l'epaisseur du film poli ou du point terminal de polissage, procede de fabrication d'un dispositif a semi-conducteur |
US6146242A (en) | 1999-06-11 | 2000-11-14 | Strasbaugh, Inc. | Optical view port for chemical mechanical planarization endpoint detection |
US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
JP2001066217A (ja) * | 1999-08-30 | 2001-03-16 | Sekisui Chem Co Ltd | ライニング槽の溶接検査方法 |
US6454630B1 (en) | 1999-09-14 | 2002-09-24 | Applied Materials, Inc. | Rotatable platen having a transparent window for a chemical mechanical polishing apparatus and method of making the same |
US6524164B1 (en) | 1999-09-14 | 2003-02-25 | Applied Materials, Inc. | Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus |
US6358130B1 (en) | 1999-09-29 | 2002-03-19 | Rodel Holdings, Inc. | Polishing pad |
JP3259225B2 (ja) | 1999-12-27 | 2002-02-25 | 株式会社ニコン | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
JP4342667B2 (ja) * | 1999-12-28 | 2009-10-14 | ロンシール工業株式会社 | ポリオレフィン系樹脂シートの接合方法 |
JP2003524300A (ja) | 2000-02-25 | 2003-08-12 | ロデール ホールディングス インコーポレイテッド | 透明部分のある研磨パッド |
US6860793B2 (en) | 2000-03-15 | 2005-03-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Window portion with an adjusted rate of wear |
US6685537B1 (en) | 2000-06-05 | 2004-02-03 | Speedfam-Ipec Corporation | Polishing pad window for a chemical mechanical polishing tool |
JP2002001647A (ja) | 2000-06-19 | 2002-01-08 | Rodel Nitta Co | 研磨パッド |
US20020137431A1 (en) | 2001-03-23 | 2002-09-26 | Labunsky Michael A. | Methods and apparatus for polishing and planarization |
US6641470B1 (en) | 2001-03-30 | 2003-11-04 | Lam Research Corporation | Apparatus for accurate endpoint detection in supported polishing pads |
JP4131632B2 (ja) * | 2001-06-15 | 2008-08-13 | 株式会社荏原製作所 | ポリッシング装置及び研磨パッド |
US6599765B1 (en) | 2001-12-12 | 2003-07-29 | Lam Research Corporation | Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection |
US6524176B1 (en) | 2002-03-25 | 2003-02-25 | Macronix International Co. Ltd. | Polishing pad |
US6806100B1 (en) * | 2002-12-24 | 2004-10-19 | Lam Research Corporation | Molded end point detection window for chemical mechanical planarization |
US6676483B1 (en) * | 2003-02-03 | 2004-01-13 | Rodel Holdings, Inc. | Anti-scattering layer for polishing pad windows |
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2003
- 2003-09-19 US US10/666,797 patent/US7195539B2/en active Active
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CN1852788A (zh) | 2006-10-25 |
DE602004026748D1 (de) | 2010-06-02 |
US20050060943A1 (en) | 2005-03-24 |
US7195539B2 (en) | 2007-03-27 |
TWI276504B (en) | 2007-03-21 |
EP1667816A1 (en) | 2006-06-14 |
JP2007506280A (ja) | 2007-03-15 |
ATE464976T1 (de) | 2010-05-15 |
KR20060079231A (ko) | 2006-07-05 |
TW200526357A (en) | 2005-08-16 |
KR100936594B1 (ko) | 2010-01-13 |
WO2005032765A1 (en) | 2005-04-14 |
EP1667816B1 (en) | 2010-04-21 |
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