JP5986268B2 - 化学機械的研磨のための透明な多孔性材料 - Google Patents
化学機械的研磨のための透明な多孔性材料 Download PDFInfo
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- JP5986268B2 JP5986268B2 JP2015123439A JP2015123439A JP5986268B2 JP 5986268 B2 JP5986268 B2 JP 5986268B2 JP 2015123439 A JP2015123439 A JP 2015123439A JP 2015123439 A JP2015123439 A JP 2015123439A JP 5986268 B2 JP5986268 B2 JP 5986268B2
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- polishing pad
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Description
[実施形態1]
細孔の平均サイズが0.01ミクロン〜1ミクロンの多孔性材料を含む化学機械的研磨用の研磨パッド用基板において、200nm〜35,000nmの範囲の少なくとも1つの波長において光透過率が10%以上である研磨パッド用基板。
[実施形態2]
200nm〜35,000nmの範囲の少なくとも1つの波長において光透過率が30%以上である、実施形態1の研磨パッド用基板。
[実施形態3]
細孔の平均サイズが0.1ミクロン〜0.7ミクロンである、実施形態1の研磨パッド用基板。
[実施形態4]
多孔性材料の密度が0.5g/cm3以上である、実施形態1の研磨パッド用基板。
[実施形態5]
多孔性材料の密度が0.7g/cm3以上である、実施形態4に記載の研磨パッド用基板。
多孔性材料の細孔容積が90%以下である、実施形態1に記載の研磨パッド用基板。
[実施形態7]
多孔性材料の細孔容積が25%以下である、実施形態6に記載の研磨パッド用基板。
[実施形態8]
多孔性材料が、熱可塑性エラストマー、熱可塑性ポリウレタン、熱可塑性ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、弾性ゴム、弾性ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、これらのコポリマー、これらの混合物からなるグループの中から選択したポリマー樹脂を含む、実施形態1に記載の研磨パッド用基板。
[実施形態9]
ポリマー樹脂が熱可塑性ポリウレタンである、実施形態8に記載の研磨パッド用基板。
多孔性材料が三次元金属酸化物ネットワークを含む、請求項1に記載の研磨パッド用基板。
[実施形態11]
基板が研磨パッドである、実施形態1に記載の研磨パッド用基板。
[実施形態12]
基板が研磨パッドのウインドウである、実施形態1に記載の研磨パッド用基板。
[実施形態13]
(a)回転するプラテンと、
(b)実施形態1に記載の研磨パッド用基板を備える研磨パッドと、
(c)研磨する加工部品を回転する研磨パッドと接触状態に保持する支持体とを備える化学機械的研磨装置。
[実施形態14]
その場で研磨の終点を検出するシステムをさらに備える、実施形態13に記載の化学機械的研磨装置。
[実施形態15]
加工部品を研磨する方法であって、
(a)請求項1に記載の研磨パッド用基板を備える研磨パッドを用意するステップと、
(b)加工部品をその研磨パッドと接触させるステップと、
(c)その研磨パッドをその加工部品に対して移動させてその加工部品を研削することによりその加工部品を研磨するステップを含む方法。
Claims (9)
- 細孔の平均サイズが0.01ミクロン〜1ミクロンの多孔性材料を含む化学機械的研磨用の研磨パッド用基板であって、200nm〜35,000nmの範囲の少なくとも1つの波長において光透過率が10%以上であり、該多孔性材料が、三次元金属酸化物ネットワークを含む、研磨パッド用基板。
- 前記研磨パッド用基板が、200nm〜35,000nmの範囲の少なくとも1つの波長において光透過率が30%以上である、請求項1に記載の研磨パッド用基板。
- 前記細孔の平均サイズが0.1ミクロン〜0.7ミクロンである、請求項1に記載の研磨パッド用基板。
- 前記多孔性材料の密度が0.5g/cm3以上である、請求項1に記載の研磨パッド用基板。
- 前記多孔性材料の密度が0.7g/cm3以上である、請求項4に記載の研磨パッド用基板。
- 前記多孔性材料の細孔容積が90%以下である、請求項1に記載の研磨パッド用基板。
- 前記多孔性材料の細孔容積が25%以下である、請求項6に記載の研磨パッド用基板。
- 前記多孔性材料が、熱可塑性エラストマー、熱可塑性ポリウレタン、熱可塑性ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、弾性ゴム、弾性ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、これらのコポリマーおよびこれらの混合物からなる群から選択されたポリマー樹脂を含む、請求項1記載の研磨パッド基板。
- 前記ポリマー樹脂が、熱可塑性ポリウレタンである、請求項8に記載の研磨パッド基板。
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US10/282,489 US7435165B2 (en) | 2002-10-28 | 2002-10-28 | Transparent microporous materials for CMP |
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JP2010066030A Expired - Fee Related JP5675136B2 (ja) | 2002-10-28 | 2010-03-23 | 化学機械的研磨のための透明な多孔性材料 |
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JP2015123439A Expired - Fee Related JP5986268B2 (ja) | 2002-10-28 | 2015-06-19 | 化学機械的研磨のための透明な多孔性材料 |
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JP2010066030A Expired - Fee Related JP5675136B2 (ja) | 2002-10-28 | 2010-03-23 | 化学機械的研磨のための透明な多孔性材料 |
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EP (1) | EP1567306B1 (ja) |
JP (4) | JP2006504260A (ja) |
KR (1) | KR101065117B1 (ja) |
CN (1) | CN100589934C (ja) |
AT (1) | ATE366165T1 (ja) |
AU (1) | AU2003264819A1 (ja) |
DE (1) | DE60314772T2 (ja) |
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2002
- 2002-10-28 US US10/282,489 patent/US7435165B2/en active Active
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- 2003-10-06 JP JP2004546252A patent/JP2006504260A/ja active Pending
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- 2003-10-06 DE DE60314772T patent/DE60314772T2/de not_active Expired - Lifetime
- 2003-10-06 AU AU2003264819A patent/AU2003264819A1/en not_active Abandoned
- 2003-10-06 KR KR1020057007277A patent/KR101065117B1/ko active IP Right Grant
- 2003-10-06 EP EP03809403A patent/EP1567306B1/en not_active Expired - Lifetime
- 2003-10-06 AT AT03809403T patent/ATE366165T1/de not_active IP Right Cessation
- 2003-10-09 TW TW092128094A patent/TWI234505B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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ATE366165T1 (de) | 2007-07-15 |
KR20050061569A (ko) | 2005-06-22 |
TW200420382A (en) | 2004-10-16 |
EP1567306A1 (en) | 2005-08-31 |
JP5675136B2 (ja) | 2015-02-25 |
WO2004037490A1 (en) | 2004-05-06 |
JP2010166078A (ja) | 2010-07-29 |
JP2015193077A (ja) | 2015-11-05 |
DE60314772D1 (de) | 2007-08-16 |
AU2003264819A1 (en) | 2004-05-13 |
EP1567306B1 (en) | 2007-07-04 |
DE60314772T2 (de) | 2007-10-31 |
JP2013201452A (ja) | 2013-10-03 |
CN100589934C (zh) | 2010-02-17 |
US20040082276A1 (en) | 2004-04-29 |
JP5882947B2 (ja) | 2016-03-09 |
JP2006504260A (ja) | 2006-02-02 |
US7435165B2 (en) | 2008-10-14 |
KR101065117B1 (ko) | 2011-09-16 |
CN1708377A (zh) | 2005-12-14 |
TWI234505B (en) | 2005-06-21 |
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