JP5675136B2 - 化学機械的研磨のための透明な多孔性材料 - Google Patents
化学機械的研磨のための透明な多孔性材料 Download PDFInfo
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- JP5675136B2 JP5675136B2 JP2010066030A JP2010066030A JP5675136B2 JP 5675136 B2 JP5675136 B2 JP 5675136B2 JP 2010066030 A JP2010066030 A JP 2010066030A JP 2010066030 A JP2010066030 A JP 2010066030A JP 5675136 B2 JP5675136 B2 JP 5675136B2
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- Prior art keywords
- polishing pad
- polishing
- porous material
- polymer
- pad substrate
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Description
本願発明は、第二の形態として、前記第一の形態において、細孔の平均サイズが0.1ミクロン〜0.7ミクロンである、研磨パッド用基板に関する。
本願発明は、第三の形態として、前記第一の形態において、多孔性材料の密度が0.7g/cm 3 以上である、研磨パッド用基板に関する。
本願発明は、第四の形態として、前記第一の形態において、多孔性材料の細孔容積が90%以下である、研磨パッド用基板に関する。
本願発明は、第五の形態として、前記第四の形態において、多孔性材料の細孔容積が25%以下である、研磨パッド用基板に関する。
本願発明は、第六の形態として、前記第一の形態において、多孔性材料が、熱可塑性エラストマー、熱可塑性ポリウレタン、熱可塑性ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、弾性ゴム、弾性ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、これらのコポリマー、これらの混合物からなるグループの中から選択したポリマー樹脂を含む、研磨パッド用基板に関する。
本願発明は、第七の形態として、前記第六の形態において、ポリマー樹脂が熱可塑性ポリウレタンである、研磨パッド用基板に関する。
本願発明は、第八の形態として、前記第一の形態において、多孔性材料が三次元金属酸化物ネットワークを含む、研磨パッド用基板に関する。
本願発明は、第九の形態として、前記第一の形態において、基板が研磨パッドである、研磨パッド用基板に関する。
本願発明は、第十の形態として、前記第一の形態において、基板が研磨パッドのウインドウである、研磨パッド用基板に関する。
本願発明は、第十一の形態として、加工部品を研磨する方法であって、
(a)前記第一の形態の研磨パッド用基板を備える研磨パッドを用意するステップと、
(b)加工部品をその研磨パッドと接触させるステップと、
(c)その研磨パッドをその加工部品に対して移動させてその加工部品を研削することによりその加工部品を研磨するステップを含む方法に関する。
本発明により、化学機械的研磨装置(CMP装置)と、加工部品の研磨方法がさらに提供される。CMP装置は、(a)回転するテーブルと、(b)本発明の研磨パッド用基板を備える研磨パッドと、(c)研磨する加工部品を回転する研磨パッドと接触状態に保持する支持体とを備えている。研磨方法は、(i)本発明の研磨パッド用基板を備える研磨パッドを用意するステップと、(ii)加工部品をその研磨パッドと接触させるステップと、(iii)その研磨パッドをその加工部品に対して移動させてその加工部品を研削することによりその加工部品を研磨するステップを含んでいる。
以下に、本願発明に関連する発明の実施形態を列挙する。
[実施形態1]
細孔の平均サイズが0.01ミクロン〜1ミクロンの多孔性材料を含む化学機械的研磨用の研磨パッド用基板において、200nm〜35,000nmの範囲の少なくとも1つの波長において光透過率が10%以上である研磨パッド用基板。
[実施形態2]
200nm〜35,000nmの範囲の少なくとも1つの波長において光透過率が30%以上である、実施形態1の研磨パッド用基板。
[実施形態3]
細孔の平均サイズが0.1ミクロン〜0.7ミクロンである、実施形態1の研磨パッド用基板。
[実施形態4]
多孔性材料の密度が0.5g/cm 3 以上である、実施形態1の研磨パッド用基板。
[実施形態5]
多孔性材料の密度が0.7g/cm 3 以上である、実施形態4に記載の研磨パッド用基板。
[実施形態6]
多孔性材料の細孔容積が90%以下である、実施形態1に記載の研磨パッド用基板。
[実施形態7]
多孔性材料の細孔容積が25%以下である、実施形態6に記載の研磨パッド用基板。
[実施形態8]
多孔性材料が、熱可塑性エラストマー、熱可塑性ポリウレタン、熱可塑性ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、弾性ゴム、弾性ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、これらのコポリマー、これらの混合物からなるグループの中から選択したポリマー樹脂を含む、実施形態1に記載の研磨パッド用基板。
[実施形態9]
ポリマー樹脂が熱可塑性ポリウレタンである、実施形態8に記載の研磨パッド用基板。
[実施形態10]
多孔性材料が三次元金属酸化物ネットワークを含む、請求項1に記載の研磨パッド用基板。
[実施形態11]
基板が研磨パッドである、実施形態1に記載の研磨パッド用基板。
[実施形態12]
基板が研磨パッドのウインドウである、実施形態1に記載の研磨パッド用基板。
[実施形態13]
(a)回転するプラテンと、
(b)実施形態1に記載の研磨パッド用基板を備える研磨パッドと、
(c)研磨する加工部品を回転する研磨パッドと接触状態に保持する支持体とを備える化学機械的研磨装置。
[実施形態14]
その場で研磨の終点を検出するシステムをさらに備える、実施形態13に記載の化学機械的研磨装置。
[実施形態15]
加工部品を研磨する方法であって、
(a)請求項1に記載の研磨パッド用基板を備える研磨パッドを用意するステップと、
(b)加工部品をその研磨パッドと接触させるステップと、
(c)その研磨パッドをその加工部品に対して移動させてその加工部品を研削することによりその加工部品を研磨するステップを含む方法。
Claims (3)
- 細孔の平均サイズが0.1ミクロン〜0.7ミクロンの熱可塑性ポリウレタンからなる多孔性材料を含む化学機械的研磨用の研磨パッド用基板において、200nm〜35,000nmの範囲の少なくとも1つの波長において光透過率が50%以上であり、多孔性材料の密度が0.7g/cm3以上であり、又、前記多孔性材料中の細孔の90%以上は、細孔のサイズ分布が±0.2μm以下であって、多孔性材料の細孔容積が25%以下である、研磨パッド用基板。
- さらに、終点検出(EPD)システムに用いる光の波長と一致するかまたは重複する透過スペクトルを有する染料を含有する、請求項1に記載の研磨パッド用基板。
- 加工部品を研磨する方法であって、
(a)請求項1に記載の研磨パッド用基板を備える研磨パッドを用意するステップと、
(b)加工部品をその研磨パッドと接触させるステップと、
(c)その研磨パッドをその加工部品に対して移動させてその加工部品を研削することによりその加工部品を研磨するステップを含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/282,489 US7435165B2 (en) | 2002-10-28 | 2002-10-28 | Transparent microporous materials for CMP |
US10/282,489 | 2002-10-28 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004546252A Division JP2006504260A (ja) | 2002-10-28 | 2003-10-06 | 化学機械的研磨のための透明な多孔性材料 |
Related Child Applications (1)
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JP2013116652A Division JP5882947B2 (ja) | 2002-10-28 | 2013-06-03 | 化学機械的研磨のための透明な多孔性材料 |
Publications (2)
Publication Number | Publication Date |
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JP2010166078A JP2010166078A (ja) | 2010-07-29 |
JP5675136B2 true JP5675136B2 (ja) | 2015-02-25 |
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JP2004546252A Pending JP2006504260A (ja) | 2002-10-28 | 2003-10-06 | 化学機械的研磨のための透明な多孔性材料 |
JP2010066030A Expired - Fee Related JP5675136B2 (ja) | 2002-10-28 | 2010-03-23 | 化学機械的研磨のための透明な多孔性材料 |
JP2013116652A Expired - Fee Related JP5882947B2 (ja) | 2002-10-28 | 2013-06-03 | 化学機械的研磨のための透明な多孔性材料 |
JP2015123439A Expired - Fee Related JP5986268B2 (ja) | 2002-10-28 | 2015-06-19 | 化学機械的研磨のための透明な多孔性材料 |
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JP2004546252A Pending JP2006504260A (ja) | 2002-10-28 | 2003-10-06 | 化学機械的研磨のための透明な多孔性材料 |
Family Applications After (2)
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JP2013116652A Expired - Fee Related JP5882947B2 (ja) | 2002-10-28 | 2013-06-03 | 化学機械的研磨のための透明な多孔性材料 |
JP2015123439A Expired - Fee Related JP5986268B2 (ja) | 2002-10-28 | 2015-06-19 | 化学機械的研磨のための透明な多孔性材料 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7435165B2 (ja) |
EP (1) | EP1567306B1 (ja) |
JP (4) | JP2006504260A (ja) |
KR (1) | KR101065117B1 (ja) |
CN (1) | CN100589934C (ja) |
AT (1) | ATE366165T1 (ja) |
AU (1) | AU2003264819A1 (ja) |
DE (1) | DE60314772T2 (ja) |
TW (1) | TWI234505B (ja) |
WO (1) | WO2004037490A1 (ja) |
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EP1567306A1 (en) | 2005-08-31 |
DE60314772D1 (de) | 2007-08-16 |
DE60314772T2 (de) | 2007-10-31 |
JP2006504260A (ja) | 2006-02-02 |
KR20050061569A (ko) | 2005-06-22 |
US7435165B2 (en) | 2008-10-14 |
JP5882947B2 (ja) | 2016-03-09 |
EP1567306B1 (en) | 2007-07-04 |
US20040082276A1 (en) | 2004-04-29 |
JP2015193077A (ja) | 2015-11-05 |
AU2003264819A1 (en) | 2004-05-13 |
JP5986268B2 (ja) | 2016-09-06 |
WO2004037490A1 (en) | 2004-05-06 |
KR101065117B1 (ko) | 2011-09-16 |
JP2010166078A (ja) | 2010-07-29 |
JP2013201452A (ja) | 2013-10-03 |
ATE366165T1 (de) | 2007-07-15 |
CN100589934C (zh) | 2010-02-17 |
CN1708377A (zh) | 2005-12-14 |
TW200420382A (en) | 2004-10-16 |
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