DE69102151D1 - Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur. - Google Patents

Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur.

Info

Publication number
DE69102151D1
DE69102151D1 DE69102151T DE69102151T DE69102151D1 DE 69102151 D1 DE69102151 D1 DE 69102151D1 DE 69102151 T DE69102151 T DE 69102151T DE 69102151 T DE69102151 T DE 69102151T DE 69102151 D1 DE69102151 D1 DE 69102151D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
field oxide
volatile semiconductor
oxide structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69102151T
Other languages
English (en)
Other versions
DE69102151T2 (de
Inventor
Katsuya Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69102151D1 publication Critical patent/DE69102151D1/de
Publication of DE69102151T2 publication Critical patent/DE69102151T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69102151T 1990-01-31 1991-01-31 Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur. Expired - Fee Related DE69102151T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021556A JPH088316B2 (ja) 1990-01-31 1990-01-31 紫外線消去型不揮発性半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69102151D1 true DE69102151D1 (de) 1994-07-07
DE69102151T2 DE69102151T2 (de) 1994-10-27

Family

ID=12058285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69102151T Expired - Fee Related DE69102151T2 (de) 1990-01-31 1991-01-31 Durch ultraviolette Strahlung löschbare, nichtflüchtige Halbleiterspeichervorrichtung mit einer asymmetrischen Feldoxid-Struktur.

Country Status (5)

Country Link
US (1) US5255219A (de)
EP (1) EP0440222B1 (de)
JP (1) JPH088316B2 (de)
KR (1) KR940010570B1 (de)
DE (1) DE69102151T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790452A (en) * 1996-05-02 1998-08-04 Integrated Device Technology, Inc. Memory cell having asymmetrical source/drain pass transistors and method for operating same
KR100227625B1 (ko) * 1996-11-04 1999-11-01 김영환 반도체 소자의 테스트 패턴 제조방법
JP3742069B2 (ja) 2003-05-16 2006-02-01 沖電気工業株式会社 半導体素子の製造方法
KR100579127B1 (ko) 2003-11-19 2006-05-12 한국전자통신연구원 다중 빔 통신을 위한 위성 중계기용 스위치 제어 장치 및그 방법
US9691776B2 (en) 2013-06-13 2017-06-27 SK Hynix Inc. Nonvolatile memory device
KR102109462B1 (ko) * 2013-06-13 2020-05-12 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4317272A (en) * 1979-10-26 1982-03-02 Texas Instruments Incorporated High density, electrically erasable, floating gate memory cell
JPS56108259A (en) * 1980-02-01 1981-08-27 Hitachi Ltd Semiconductor memory device
US4608751A (en) * 1980-04-07 1986-09-02 Texas Instruments Incorporated Method of making dynamic memory array
JPS5898978A (ja) * 1981-12-08 1983-06-13 Matsushita Electronics Corp 不揮発性メモリ
JPS5922358A (ja) * 1982-07-28 1984-02-04 Toshiba Corp 半導体記憶装置
DE3482847D1 (de) * 1983-04-18 1990-09-06 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung mit einem schwebenden gate.
JPH07120716B2 (ja) * 1985-03-30 1995-12-20 株式会社東芝 半導体記憶装置
JPS62163376A (ja) * 1986-01-14 1987-07-20 Fujitsu Ltd 半導体記憶装置の製造方法
JPH0815206B2 (ja) * 1986-01-30 1996-02-14 三菱電機株式会社 半導体記憶装置
JPS63150971A (ja) * 1986-12-13 1988-06-23 Nec Corp 不揮発性メモリ
US4766473A (en) * 1986-12-29 1988-08-23 Motorola, Inc. Single transistor cell for electrically-erasable programmable read-only memory and array thereof
US4829351A (en) * 1987-03-16 1989-05-09 Motorola, Inc. Polysilicon pattern for a floating gate memory
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate
JP2886183B2 (ja) * 1988-06-28 1999-04-26 三菱電機株式会社 フィールド分離絶縁膜の製造方法
IT1228720B (it) * 1989-03-15 1991-07-03 Sgs Thomson Microelectronics Matrice a tovaglia di celle di memoria eprom con giunzioni sepolte, accessibili singolarmente mediante decodifica tradizionale.

Also Published As

Publication number Publication date
KR940010570B1 (ko) 1994-10-24
EP0440222A3 (en) 1991-11-27
DE69102151T2 (de) 1994-10-27
EP0440222A2 (de) 1991-08-07
US5255219A (en) 1993-10-19
JPH03225965A (ja) 1991-10-04
JPH088316B2 (ja) 1996-01-29
EP0440222B1 (de) 1994-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee